EP1953809A2 - Verfahren zur Abscheidung von Metallfilmen mittels CVD auf Diffusionsbarriereschichten - Google Patents
Verfahren zur Abscheidung von Metallfilmen mittels CVD auf Diffusionsbarriereschichten Download PDFInfo
- Publication number
- EP1953809A2 EP1953809A2 EP08150392A EP08150392A EP1953809A2 EP 1953809 A2 EP1953809 A2 EP 1953809A2 EP 08150392 A EP08150392 A EP 08150392A EP 08150392 A EP08150392 A EP 08150392A EP 1953809 A2 EP1953809 A2 EP 1953809A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal
- barrier layer
- nitride
- diffusion barrier
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/428,447 US7311946B2 (en) | 2003-05-02 | 2003-05-02 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
US10/820,864 US7524533B2 (en) | 2003-05-02 | 2004-04-09 | Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes |
EP04010352A EP1473761A1 (de) | 2003-05-02 | 2004-04-30 | Verfahren zum Herstellen einer Metalldünnschicht |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04010352A Division EP1473761A1 (de) | 2003-05-02 | 2004-04-30 | Verfahren zum Herstellen einer Metalldünnschicht |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1953809A2 true EP1953809A2 (de) | 2008-08-06 |
EP1953809A3 EP1953809A3 (de) | 2009-09-02 |
Family
ID=33310407
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08150390A Withdrawn EP1916707A3 (de) | 2003-05-02 | 2004-04-30 | Verfahren zur Abscheidung von Metallfilmen mittels CVD- oder ALD-Prozessen auf Diffusionsbarriereschichten |
EP08150392A Withdrawn EP1953809A3 (de) | 2003-05-02 | 2004-04-30 | Verfahren zur Abscheidung von Metallfilmen mittels CVD auf Diffusionsbarriereschichten |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08150390A Withdrawn EP1916707A3 (de) | 2003-05-02 | 2004-04-30 | Verfahren zur Abscheidung von Metallfilmen mittels CVD- oder ALD-Prozessen auf Diffusionsbarriereschichten |
Country Status (2)
Country | Link |
---|---|
US (4) | US7311946B2 (de) |
EP (2) | EP1916707A3 (de) |
Families Citing this family (48)
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MXPA04004490A (es) | 2001-11-13 | 2005-05-16 | Acme United Corp | Recubrimiento para implementos cortantes de papeleria. |
US7913402B2 (en) | 2001-11-13 | 2011-03-29 | Acme United Corporation | Coating for cutting implements |
US7081409B2 (en) * | 2002-07-17 | 2006-07-25 | Samsung Electronics Co., Ltd. | Methods of producing integrated circuit devices utilizing tantalum amine derivatives |
US7934319B2 (en) | 2002-10-28 | 2011-05-03 | Acme United Corporation | Pencil-sharpening device |
US7311946B2 (en) * | 2003-05-02 | 2007-12-25 | Air Products And Chemicals, Inc. | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
KR100974778B1 (ko) * | 2003-06-30 | 2010-08-06 | 삼성전자주식회사 | 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법 |
JP4581119B2 (ja) * | 2003-09-17 | 2010-11-17 | 株式会社トリケミカル研究所 | NiSi膜形成材料およびNiSi膜形成方法 |
CN1938453B (zh) * | 2004-04-23 | 2010-10-20 | 东曹株式会社 | 用于产生氢的电极及其制造方法和使用该电极的电解方法 |
US20070059929A1 (en) * | 2004-06-25 | 2007-03-15 | Hag-Ju Cho | Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same |
US20070026621A1 (en) * | 2004-06-25 | 2007-02-01 | Hag-Ju Cho | Non-volatile semiconductor devices and methods of manufacturing the same |
US7605469B2 (en) * | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
US20090098290A1 (en) * | 2004-09-27 | 2009-04-16 | Mikio Watanabe | Process for formation of copper-containing films |
US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US7776394B2 (en) * | 2005-08-08 | 2010-08-17 | E.I. Du Pont De Nemours And Company | Atomic layer deposition of metal-containing films using surface-activating agents |
US7736697B2 (en) * | 2005-08-08 | 2010-06-15 | E. I. Du Pont De Nemours And Company | Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes |
EP1970947B1 (de) * | 2005-12-02 | 2016-08-24 | Ulvac, Inc. | Verfahren zur bildung eines cu-films |
US8935733B2 (en) * | 2006-09-07 | 2015-01-13 | Porto Vinci Ltd. Limited Liability Company | Data presentation using a wireless home entertainment hub |
US20080096381A1 (en) * | 2006-10-12 | 2008-04-24 | Han Joseph H | Atomic layer deposition process for iridium barrier layers |
US9087877B2 (en) * | 2006-10-24 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k interconnect structures with reduced RC delay |
US7476615B2 (en) * | 2006-11-01 | 2009-01-13 | Intel Corporation | Deposition process for iodine-doped ruthenium barrier layers |
KR100806128B1 (ko) * | 2006-12-11 | 2008-02-22 | 삼성전자주식회사 | 반도체 소자의 배선 구조물 및 이의 형성방법 |
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JP5384291B2 (ja) | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
KR20100100178A (ko) * | 2009-03-05 | 2010-09-15 | 삼성전자주식회사 | 반도체 소자 |
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WO2011006035A2 (en) * | 2009-07-10 | 2011-01-13 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Bis-ketoiminate copper precursors for deposition of copper-containing films |
WO2011050073A1 (en) * | 2009-10-23 | 2011-04-28 | President And Fellows Of Harvard College | Self-aligned barrier and capping layers for interconnects |
KR101145726B1 (ko) * | 2010-04-12 | 2012-05-16 | 부산대학교 산학협력단 | 반도체 소자용 삼원계 비정질 이리듐 박막 및 이의 제조방법 |
SG11201407282XA (en) * | 2012-07-31 | 2015-01-29 | Univ Nanyang Tech | Semiconductor device and method for forming the same |
US9263327B2 (en) * | 2014-06-20 | 2016-02-16 | Globalfoundries Inc. | Minimizing void formation in semiconductor vias and trenches |
RU2569870C1 (ru) * | 2014-07-15 | 2015-11-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Казанский национальный исследовательский технически университет им. А.Н. Туполева - КАИ" (КНИТУ-КАИ) | Способ нанесения защитного покрытия на пресс-форму для литья под давлением |
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RU187255U1 (ru) * | 2018-08-20 | 2019-02-26 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева-КАИ" (КНИТУ-КАИ) | Пресс-форма для литья под давлением алюминиевых сплавов |
US11390947B2 (en) | 2019-03-04 | 2022-07-19 | Applied Materials, Inc. | Method of forming a fluorinated metal film |
RU197080U1 (ru) * | 2019-07-16 | 2020-03-30 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева-КАИ" (КНИТУ-КАИ) | Металлическая форма для литья в кокиль |
US11701802B2 (en) | 2019-11-05 | 2023-07-18 | GM Global Technology Operations LLC | Enthalpy-driven self-hardening process at the polymeric/metal layer interface with an interdiffusion process |
US11955379B2 (en) * | 2020-09-15 | 2024-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal adhesion layer to promote metal plug adhesion |
RU205710U1 (ru) * | 2021-04-12 | 2021-07-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева - КАИ" | Металлический кокиль для литья магниевых сплавов с многослойным защитным покрытием |
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CN115003016B (zh) * | 2022-05-18 | 2024-01-26 | 九江德福科技股份有限公司 | 一种电子电路用附载体极薄铜箔 |
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Also Published As
Publication number | Publication date |
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US20040234704A1 (en) | 2004-11-25 |
US7311946B2 (en) | 2007-12-25 |
EP1916707A3 (de) | 2009-10-07 |
US7524533B2 (en) | 2009-04-28 |
EP1953809A3 (de) | 2009-09-02 |
US20070190779A1 (en) | 2007-08-16 |
US7985449B2 (en) | 2011-07-26 |
US20080075855A1 (en) | 2008-03-27 |
US20040219369A1 (en) | 2004-11-04 |
EP1916707A2 (de) | 2008-04-30 |
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