EP1920462A2 - Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement - Google Patents
Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelementInfo
- Publication number
- EP1920462A2 EP1920462A2 EP06791327A EP06791327A EP1920462A2 EP 1920462 A2 EP1920462 A2 EP 1920462A2 EP 06791327 A EP06791327 A EP 06791327A EP 06791327 A EP06791327 A EP 06791327A EP 1920462 A2 EP1920462 A2 EP 1920462A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- insulating layer
- component
- glass coating
- substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 48
- 239000011248 coating agent Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000012876 topography Methods 0.000 claims abstract description 6
- 238000001465 metallisation Methods 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 15
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims 4
- 238000003475 lamination Methods 0.000 claims 1
- 238000003754 machining Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 230000005855 radiation Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000000930 thermomechanical effect Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910010165 TiCu Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/24051—Conformal with the semiconductor or solid-state device
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
- H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/24998—Reinforcing structures, e.g. ramp-like support
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
- H01L2224/82035—Reshaping, e.g. forming vias by heating means
- H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
- H01L2224/82047—Reshaping, e.g. forming vias by mechanical means, e.g. severing, pressing, stamping
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01L2924/01005—Boron [B]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Definitions
- the glass coating is applied by means of physical vapor deposition (PVD) and / or plasma ion assisted deposition (PIAD), in particular electron-beam PVD-PIAD.
- PVD physical vapor deposition
- PIAD plasma ion assisted deposition
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005041099A DE102005041099A1 (de) | 2005-08-30 | 2005-08-30 | LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik |
PCT/DE2006/001513 WO2007025521A2 (de) | 2005-08-30 | 2006-08-30 | Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1920462A2 true EP1920462A2 (de) | 2008-05-14 |
Family
ID=37692604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06791327A Withdrawn EP1920462A2 (de) | 2005-08-30 | 2006-08-30 | Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement |
Country Status (8)
Country | Link |
---|---|
US (1) | US7859005B2 (de) |
EP (1) | EP1920462A2 (de) |
JP (1) | JP5215853B2 (de) |
KR (1) | KR101295606B1 (de) |
CN (1) | CN101253623B (de) |
DE (1) | DE102005041099A1 (de) |
TW (1) | TWI313075B (de) |
WO (1) | WO2007025521A2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007033288A1 (de) * | 2007-07-17 | 2009-01-22 | Siemens Ag | Elektronisches Bauelement und Vorrichtung mit hoher Isolationsfestigkeit sowie Verfahren zu deren Herstellung |
US20090079057A1 (en) * | 2007-09-24 | 2009-03-26 | Infineon Technologies Ag | Integrated circuit device |
DE102008011809A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102008019902A1 (de) | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
DE102008015551A1 (de) * | 2008-03-25 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit planarer Kontaktierung und Verfahren zu dessen Herstellung |
DE102009039891A1 (de) * | 2009-09-03 | 2011-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul aufweisend zumindest einen ersten Halbleiterkörper mit einer Strahlungsaustrittsseite und einer Isolationsschicht und Verfahren zu dessen Herstellung |
DE102009042205A1 (de) * | 2009-09-18 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul |
CN102456803A (zh) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
US9437756B2 (en) | 2013-09-27 | 2016-09-06 | Sunpower Corporation | Metallization of solar cells using metal foils |
KR101856106B1 (ko) * | 2015-04-24 | 2018-05-09 | 주식회사 아모센스 | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 |
KR101856107B1 (ko) * | 2015-04-24 | 2018-05-09 | 주식회사 아모센스 | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 |
US10529646B2 (en) | 2015-04-24 | 2020-01-07 | Amosense Co., Ltd. | Methods of manufacturing a ceramic substrate and ceramic substrates |
KR101856108B1 (ko) * | 2015-04-24 | 2018-05-09 | 주식회사 아모센스 | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 |
KR101856109B1 (ko) * | 2015-04-24 | 2018-05-09 | 주식회사 아모센스 | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 |
KR102563421B1 (ko) * | 2016-07-19 | 2023-08-07 | 주식회사 아모센스 | 세라믹 기판 제조 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017340A (en) * | 1975-08-04 | 1977-04-12 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
JPH0437067A (ja) * | 1990-05-31 | 1992-02-07 | Canon Inc | 半導体素子用電極及び該電極を有する半導体装置及びその製造方法 |
JP3246929B2 (ja) * | 1991-11-11 | 2002-01-15 | 電気化学工業株式会社 | マトリックス回路基板及び表示板 |
JPH07131075A (ja) * | 1993-10-28 | 1995-05-19 | Kyocera Corp | 画像装置 |
JP3009091B2 (ja) * | 1994-11-15 | 2000-02-14 | 日亜化学工業株式会社 | 青色発光ダイオード |
JP3641122B2 (ja) * | 1997-12-26 | 2005-04-20 | ローム株式会社 | 半導体発光素子、半導体発光モジュール、およびこれらの製造方法 |
US6319757B1 (en) * | 1998-07-08 | 2001-11-20 | Caldus Semiconductor, Inc. | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates |
JP4724924B2 (ja) * | 2001-02-08 | 2011-07-13 | ソニー株式会社 | 表示装置の製造方法 |
CN1575511A (zh) | 2001-09-28 | 2005-02-02 | 西门子公司 | 用于接触基片的电接触面的方法和由具有电接触面的基片形成的装置 |
US20030085416A1 (en) | 2001-11-08 | 2003-05-08 | Tyco Electronics Corporation | Monolithically integrated pin diode and schottky diode circuit and method of fabricating same |
DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
DE10353679A1 (de) * | 2003-11-17 | 2005-06-02 | Siemens Ag | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
US6881980B1 (en) * | 2004-06-17 | 2005-04-19 | Chunghwa Picture Tubes, Ltd. | Package structure of light emitting diode |
-
2005
- 2005-08-30 DE DE102005041099A patent/DE102005041099A1/de not_active Ceased
-
2006
- 2006-08-30 CN CN2006800318234A patent/CN101253623B/zh not_active Expired - Fee Related
- 2006-08-30 TW TW095131944A patent/TWI313075B/zh not_active IP Right Cessation
- 2006-08-30 WO PCT/DE2006/001513 patent/WO2007025521A2/de active Application Filing
- 2006-08-30 JP JP2008528330A patent/JP5215853B2/ja not_active Expired - Fee Related
- 2006-08-30 EP EP06791327A patent/EP1920462A2/de not_active Withdrawn
- 2006-08-30 US US11/991,197 patent/US7859005B2/en not_active Expired - Fee Related
- 2006-08-30 KR KR1020087003687A patent/KR101295606B1/ko not_active IP Right Cessation
Non-Patent Citations (1)
Title |
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None * |
Also Published As
Publication number | Publication date |
---|---|
WO2007025521A2 (de) | 2007-03-08 |
TWI313075B (en) | 2009-08-01 |
WO2007025521A3 (de) | 2007-05-03 |
CN101253623A (zh) | 2008-08-27 |
KR101295606B1 (ko) | 2013-08-12 |
KR20080039904A (ko) | 2008-05-07 |
DE102005041099A1 (de) | 2007-03-29 |
CN101253623B (zh) | 2010-05-19 |
TW200715621A (en) | 2007-04-16 |
US7859005B2 (en) | 2010-12-28 |
JP5215853B2 (ja) | 2013-06-19 |
JP2009506558A (ja) | 2009-02-12 |
US20090278157A1 (en) | 2009-11-12 |
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