EP1788409A1 - Dispositif d'magerie radiologique et procédé d'magerie radiologique - Google Patents

Dispositif d'magerie radiologique et procédé d'magerie radiologique Download PDF

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Publication number
EP1788409A1
EP1788409A1 EP05768578A EP05768578A EP1788409A1 EP 1788409 A1 EP1788409 A1 EP 1788409A1 EP 05768578 A EP05768578 A EP 05768578A EP 05768578 A EP05768578 A EP 05768578A EP 1788409 A1 EP1788409 A1 EP 1788409A1
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EP
European Patent Office
Prior art keywords
image sensor
radiation
scintillator film
electrode section
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05768578A
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German (de)
English (en)
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EP1788409B1 (fr
EP1788409A4 (fr
Inventor
Kazuhisa c/o Hamamatsu Photonics K.K. MIYAGUCHI
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication date
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Publication of EP1788409A1 publication Critical patent/EP1788409A1/fr
Publication of EP1788409A4 publication Critical patent/EP1788409A4/fr
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Publication of EP1788409B1 publication Critical patent/EP1788409B1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a radiation imaging device which acquires a radiation image as an image signal and a radiation imaging method using this device, and more specifically, to a radiation imaging device which can be reduced in size and thickness to be suitably used to acquire a radiation image of teeth by being inserted into the oral cavity, and a radiation imaging method using this device.
  • Radiation imaging systems using CCDs in place of X-ray sensitive films have spread as medical X-ray diagnostic apparatuses.
  • two-dimensional radiation image data is acquired as electrical signals by using a radiation imaging device having a plurality of pixels, and the signals are processed by a processor and displayed on a monitor.
  • a radiation imaging device such as a dental device which is used by being inserted into the oral cavity
  • a radiation imaging device of a type disclosed in Patent Document 1 an image sensor including a solid-state image pickup device such as a CCD is disposed on a wiring substrate made of ceramic, glass, or epoxy, and a scintillator which converts radiation into light such as visible light detectable by the image sensor is disposed on a photosensitive surface of the image sensor.
  • Patent Document 1 The radiation imaging device disclosed in Patent Document 1 is reduced in size and thickness more than conventional imaging devices, however, the base on which the image sensor is placed is wider laterally than the image sensor, and it is difficult to further reduce the size and thickness while maintaining the size of the imaging area.
  • an object of the invention is to provide a radiation imaging device which can further be reduced in size and thickness while maintaining the size of the imaging area and a radiation imaging method using this radiation imaging device.
  • a radiation imaging device includes (1) a planar scintillator film which emits light with a predetermined wavelength in response to an incident of X-ray; (2) an image sensor which includes a photodetecting section for detecting the light with a predetermined wavelength emitted from the scintillator film and an electrode section on one of the surfaces of a substrate, where the photodetecting section is in tight contact with one of the surfaces of the scintillator film and the electrode section is exposed to the outside of the scintillator film; and (3) a circuit board which is disposed on the other surface of the scintillator film and has an electrode section electrically connected to the electrode section of the image sensor.
  • this radiation imaging device a construction in which the scintillator film is sandwiched by the image sensor and the circuit board is employed.
  • the electrode section of the image sensor projected and exposed to the outside from the scintillator film is electrically connected to the circuit board on the opposite side across the scintillator film by a wire or the like.
  • the radiation imaging device further includes a case which houses all of the scintillator film, the image sensor, and the circuit board, and at least whose radiation incident surface is radiolucent.
  • the whole of this case may be radiolucent, or the surface opposite the radiation incident surface may be non-radiolucent.
  • the case has a moisture-proof structure.
  • a radiation imaging method is a radiation imaging method for acquiring a radiation image as an image signal by using the radiation imaging device according to the invention, including the steps of: (1) making a radiation image enter the image sensor from a surface opposite a photodetecting section forming surface and transmitting it through the image sensor; (2) converting the radiation image into an optical image of light with a predetermined wavelength in the scintillator film by radiation that has reached the scintillator film; (3) detecting the generated optical image by the photodetecting section of the image sensor; and (4) transmitting the detected image signal from the electrode section of the image sensor to the circuit board and acquiring it through the circuit board.
  • the constituent section being present in a region projecting to the outside from the scintillator film can be limited to only the electrode section of the image sensor. Therefore, the region projecting to the outside of the photosensitive area can be reduced, so that the size of the whole device can be reduced.
  • a circuit board is formed on the scintillator film, so that a thin circuit board can be used, and the whole device can be reduced in thickness. With this arrangement, wiring of the electrode section of the image sensor and the electrode section of the circuit board also becomes easy.
  • the device By housing the device in a case whose radiation incident surface is radiolucent, the device is improved in moisture resistance and durability, and handling of the device becomes easy.
  • a radiation imaging device of a type to be inserted in the oral cavity by forming the device into a shape with no unevenness on its outer side, the burden on an examinee is reduced, and the degree of freedom at the time of imaging is increased.
  • Fig. 1 is a longitudinal sectional view of a radiation imaging device 100 according to the invention
  • Fig. 2 is a longitudinal sectional view of an imaging section 200 housed inside a case 5 shown in Fig. 1.
  • This radiation imaging device 100 includes the imaging section 200 housed inside the resin-made case 5, and the imaging section 200 is placed on a protective rubber sheet 4.
  • This radiation imaging device 100 is inserted into the oral cavity of an examinee to acquire a radiation image of teeth, etc., of the examinee, and the case surface on the rubber sheet 4 side is an incident surface 5a.
  • the imaging section 200 is constructed by laminating a scintillator film 2 and a circuit board 3 on an image sensor 1.
  • the image sensor 1 has a photodetecting section 11 obtained by forming a CCD (Charge Coupled Device) on a rectangular planar silicon substrate 10, and along one of the shorter sides, a signal reading and sensor controlling electrode section (bonding pad) 12 is formed.
  • CCD Charge Coupled Device
  • the scintillator film 2 has a three-layer laminated structure as shown in Fig. 3 in which scintillator 21 is deposited on a supporting substrate 20 and the surface thereof is covered by a protective coat 22.
  • a supporting substrate 20 for example, plastic is used, however, ceramic or glass, or a light reflective metal substrate such as aluminum can also be used.
  • a material of the scintillator 21 Tb-doped Gd 2 O 2 S or Tl-doped CsI can be used.
  • the protective coat 22 a transparent organic coat or an inorganic coat is used, and preferably, this coat is water impermeable.
  • PET polyethylene terephthalate
  • a parylene-based resin can be used, and among polyparaxylylene resins (made by Three Bond Co., Ltd., trade name: Parylene), polyparachloroxylylene (made by Three Bond Co., Ltd., trade name: Parylene C) or the like is preferable.
  • the circuit board 3 includes a substrate 30 formed of an FPC (Flexible Printed Circuit) board, PCB (Printed Circuit board), or ceramic board on which electronic parts are mounted, a circuit part 31 mounted on the substrate, and an electrode section 32.
  • the electrode section 12 of the image sensor 1 and the corresponding electrode section 32 of the circuit board 3 are electrically connected by a wire 6.
  • an output cable 34 is connected, and the cable is drawn to the outside of the case through the case 5 and connected to a processor or a display unit that is not shown.
  • the image sensor 1 shown in Fig. 4 and Fig. 5 is prepared.
  • This image sensor 1 is obtained by forming a photodetecting section 11 including two-dimensionally aligned photosensitive pixels and an electrode section 12 electrically connected to the photodetecting section by using the normal semiconductor manufacturing process on a silicon wafer and dividing the wafer into chips by dicing.
  • An effective photosensitive region of the photodetecting section 11 is about 30 mm ⁇ 20 mm, and the area of the substrate 10 is about 32 mm ⁇ 22 mm.
  • the photodetecting section 11 is biased toward one of the shorter sides of the rectangular substrate 10, and along the other shorter side, the electrode section 12 is disposed.
  • the thickness of the substrate 10 is approximately 600 through 700 ⁇ m at the end of the semiconductor manufacturing process, however, preferably, by reducing the thickness of the opposite surface (incident surface) 10a of the photodetecting section 11 by polishing to about 300 ⁇ m, the device can further be reduced in thickness.
  • a scintillator film 2 (with a thickness of about 300 ⁇ m) slightly larger in size (31 mm ⁇ 21 mm) longitudinally and laterally than the photodetecting section 11 of the image sensor 1 is prepared and affixed by an adhesive or resin, etc., so that the protective coat 22 thereof is turned toward the photodetecting section 11 side so as to cover the photodetecting section 11 (see Fig. 6 and Fig. 7).
  • the thicknesses of the supporting substrate 20, the scintillator 21, and the protective coat 22 of the scintillator film 2 are, for example, 150 ⁇ m, 150 ⁇ m, and 10 ⁇ m, respectively.
  • this adhesive or resin one having a property to transmit light emitted from the scintillator 21 when it is cured is selected.
  • the electrode section 12 and the surrounding thereof are masked.
  • a circuit board 3 on which parts have been mounted is bonded onto the scintillator film 2 (see Fig. 8 and Fig. 9). It is also possible that the circuit board 3 is bonded onto the substrate 20 of the scintillator film 2 in advance and then affixed onto the image sensor 1. At this point, the electrode section 32 of the circuit board 3 is disposed on the electrode section 12 side of the image sensor 1 so that the corresponding electrodes face each other. Then, the corresponding electrodes are connected by the wire 6. At this time, wiring is performed while taking care to prevent the wire 6 from projecting to the outside from the electrode section 12.
  • the thickness of the circuit board 3 on which parts have been mounted is about 500 ⁇ m, so that the thickness of the whole imaging section 200 can be greatly reduced to as thin as about 1.1 mm.
  • the region of the imaging section 200 projecting to the outside from the effective photosensitive region can be reduced, and the wire 6 does not project to the outside from the image sensor 1, so that the imaging section 200 is reduced in size.
  • the imaging section 200 thus manufactured is placed on the rubber sheet 4 inside the case 5, the cable 34 is connected to the output terminal 33, and the case 5 is closed tightly while the cable 34 penetrates the case 5. Thereby, the radiation imaging device 100 according to the invention shown in Fig. 1 is obtained.
  • the thickness of about 200 ⁇ m of the rubber sheet 4 is sufficient, and the thickness of the outer coat of the case 5 is set to about 0.5 mm, so that the thickness of the whole radiation imaging device 100 can be made equal to or less than 3 mm, whereby sufficient reduction in thickness and size is realized.
  • the radiation imaging device 100 is located inside the oral cavity of an examinee 7 and radiation is projected from the radiation source 8 to the radiation imaging device 100. At this time, the incident surface 5a side is disposed on the radiation source 8 side.
  • the radiation imaging device 100 is small in size and thickness, and this allows advantages such that the foreign body sensation that the examinee 7 feels when the radiation imaging device is inserted into the oral cavity of the examinee 7 can be reduced, and the degree of freedom when the device is located inside the oral cavity is improved.
  • the radiation emitted from the radiation source 8 enters the inside of the oral cavity of the examinee 7, it is absorbed by the teeth and gums, and while having radiation image information according to these, the radiation enters the radiation imaging device 100.
  • the radiation that has entered from the incident surface 5a passes though the case 5 and the rubber sheet 4 and then enters the incident surface 10a of the image sensor 1 of the imaging section 200.
  • the image sensor 1 When passing through the image sensor 1, low energy radiation is absorbed, and high energy radiation enters the scintillator film 2.
  • the radiation that has entered the scintillator film 2 passes through the protective coat 22 thereof, and is absorbed by the scintillator 21, and light with a predetermined wavelength according to the energy amount (in this embodiment, light with a wavelength of about 550 nm) is emitted.
  • the emitted light directly enters or is reflected by the supporting substrate 20 and enters the photodetecting section 11 of the image sensor 1, and converted into electrical signals in the respective pixels.
  • the light that has reached the photodetecting section 11 is an optical image including original radiation image information, and the electrical signals obtained in the respective pixels according to this light correspond to the original radiation image.
  • the converted electrical signals are transferred to the electrode section 12 through the respective pixels and a transfer line that is not shown, and further transferred to the circuit board 3 via the wire 6 and - the electrode section 32, and after being subjected to predetermined signal processing, transferred to an external processor 90 by the output cable 34 connected to the output terminal 33.
  • the processor 90 the transferred image information is accumulated and stored in an external storage device and the radiation image is displayed on the monitor 91 based on the image information.
  • the radiation imaging device 100 of the invention by shielding low energy radiation by the substrate of the image sensor 1, noise components are reduced and a clear radiation image can be obtained.
  • the scintillator 21 of the scintillator film 2 by reflecting and guiding light that advances in the direction opposite the image sensor 1 by the substrate 20 to the image sensor 1, the light emitted from the scintillator 21 can be guided to the image sensor 1, so that the optical output can be increased and a clear and high-contrast image can be obtained. Therefore, the radiation amount can be made small, and the radiation exposure amount of an examinee and an operator can be reduced.
  • the scintillator film 2 is used, however, it is also possible that a scintillator material is directly deposited on the photodetecting section 11 of the image sensor.
  • a protective coat is formed on the scintillator, and preferably, the protective coat is formed into a multilayer structure and a reflective film is formed between layers. If sufficient moisture-proof and airtightness are secured by the case, the protective coat is not always necessary.
  • CMOS Complementary Metal Oxide Semiconductor
  • the light emitted by the scintillator in response to the incident of radiation is not limited to visible light, and it may be an infrared ray or ultraviolet ray as long as it has a wavelength in a range detectable by the image sensor.
  • the above-described device includes a planar scintillator film 2, an image sensor 1 including a photodetecting section 11 in tight contact with one of the surfaces of the scintillator film 2 and an electrode section 12 exposed to the outside of the scintillator film 2, a circuit board 3 which is disposed on the other surface of the scintillator film 2 and has an electrode section 32 electrically connected to the electrode section 12 of the image sensor 1, a case 5 which houses all of the scintillator film 2, the image sensor 1, and the circuit board 3 and at least whose radiation incident surface is made of a radiolucent material, and a protective sheet 4 interposed between the inner surface of the case 5 and the scintillator film 2.
  • the radiolucent material a plastic resin, etc., can be used.
  • the material of the sheet 4 As the material of the sheet 4, urethane, silicone rubber, etc., are used, which is made of a radiolucent elastic material. In this device, while maintaining the size of the imaging area, the whole device can further be reduced in size and thickness, and the radiation incident surface can be made thin and reinforced by the sheet 4 made of an elastic material, and in addition, the sheet 4 can protect the scintillator film 2 and the image sensor 1, whose mechanical strength is low, by an elastic force.
  • the present invention can be used for a radiation imaging device and a radiation imaging method using this device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
EP05768578.6A 2004-08-20 2005-08-04 Dispositif d'magerie radiologique et procédé d'magerie radiologique Ceased EP1788409B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004241272A JP2006058168A (ja) 2004-08-20 2004-08-20 放射線撮像素子および放射線撮像方法
PCT/JP2005/014323 WO2006018983A1 (fr) 2004-08-20 2005-08-04 Dispositif d’imagerie radiologique et procédé d’imagerie radiologique

Publications (3)

Publication Number Publication Date
EP1788409A1 true EP1788409A1 (fr) 2007-05-23
EP1788409A4 EP1788409A4 (fr) 2014-04-16
EP1788409B1 EP1788409B1 (fr) 2017-01-18

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Application Number Title Priority Date Filing Date
EP05768578.6A Ceased EP1788409B1 (fr) 2004-08-20 2005-08-04 Dispositif d'magerie radiologique et procédé d'magerie radiologique

Country Status (5)

Country Link
US (1) US7705317B2 (fr)
EP (1) EP1788409B1 (fr)
JP (1) JP2006058168A (fr)
TW (1) TWI421528B (fr)
WO (1) WO2006018983A1 (fr)

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FR2891401B1 (fr) * 2005-09-23 2007-10-26 Thales Sa Realisation d'un detecteur de rayonnement.
JP5014853B2 (ja) * 2007-03-23 2012-08-29 株式会社日立製作所 半導体装置の製造方法
JPWO2008117589A1 (ja) * 2007-03-27 2010-07-15 コニカミノルタエムジー株式会社 放射線用シンチレータパネル及び放射線画像撮影装置
JP2009031140A (ja) * 2007-07-27 2009-02-12 Fujifilm Corp 放射線画像検出器
JP2010071726A (ja) * 2008-09-17 2010-04-02 Fujifilm Corp 放射線検出装置及び放射線画像撮影システム
JP5137763B2 (ja) 2008-09-26 2013-02-06 富士フイルム株式会社 放射線検出装置及び放射線画像撮影システム
CN101957452A (zh) * 2009-07-16 2011-01-26 Ge医疗系统环球技术有限公司 X射线检测器及其制造方法
JP5535670B2 (ja) * 2010-01-28 2014-07-02 富士フイルム株式会社 放射線画像検出器の製造方法
JP5568486B2 (ja) * 2011-01-05 2014-08-06 富士フイルム株式会社 放射線撮影用電子カセッテ
US9281422B2 (en) 2011-03-24 2016-03-08 Koninklijke Philips N.V. Spectral imaging detector
JP2013174465A (ja) * 2012-02-23 2013-09-05 Canon Inc 放射線検出装置
US9063238B2 (en) * 2012-08-08 2015-06-23 General Electric Company Complementary metal-oxide-semiconductor X-ray detector
JP6177663B2 (ja) * 2013-10-30 2017-08-09 株式会社日立製作所 Ｘ線透過像撮像装置
KR20150134629A (ko) * 2014-05-22 2015-12-02 주식회사바텍 센서 일체형 방사선 차폐장치
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6609105B2 (ja) * 2015-03-24 2019-11-20 キヤノン株式会社 放射線撮像装置および放射線撮像システム
WO2018173893A1 (fr) * 2017-03-22 2018-09-27 富士フイルム株式会社 Détecteur de rayonnement et dispositif d'imagerie radiographique
CN108966641B (zh) * 2017-03-22 2022-02-22 富士胶片株式会社 放射线检测器以及放射线图像摄影装置
US11762108B2 (en) * 2020-01-21 2023-09-19 LightSpin Technologies Inc. Modular pet detector comprising a plurality of modular one-dimensional arrays of monolithic detector sub-modules

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US20080067392A1 (en) 2008-03-20
JP2006058168A (ja) 2006-03-02
US7705317B2 (en) 2010-04-27
EP1788409B1 (fr) 2017-01-18
TW200619663A (en) 2006-06-16
TWI421528B (zh) 2014-01-01
WO2006018983A1 (fr) 2006-02-23
EP1788409A4 (fr) 2014-04-16

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