EP1716578A4 - Nanomassstab-metallpaste zur verbindung und benutzungsverfahren - Google Patents

Nanomassstab-metallpaste zur verbindung und benutzungsverfahren

Info

Publication number
EP1716578A4
EP1716578A4 EP05723019A EP05723019A EP1716578A4 EP 1716578 A4 EP1716578 A4 EP 1716578A4 EP 05723019 A EP05723019 A EP 05723019A EP 05723019 A EP05723019 A EP 05723019A EP 1716578 A4 EP1716578 A4 EP 1716578A4
Authority
EP
European Patent Office
Prior art keywords
interconnect
metal paste
nanoscale metal
nanoscale
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05723019A
Other languages
English (en)
French (fr)
Other versions
EP1716578A2 (de
Inventor
Guo-Quan Lu
John G Bai
Jesus N Calata
Zhiye Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Virginia Tech Intellectual Properties Inc
Original Assignee
Virginia Tech Intellectual Properties Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Virginia Tech Intellectual Properties Inc filed Critical Virginia Tech Intellectual Properties Inc
Publication of EP1716578A2 publication Critical patent/EP1716578A2/de
Publication of EP1716578A4 publication Critical patent/EP1716578A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006Ag as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0466Alloys based on noble metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3485Applying solder paste, slurry or powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/273Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27332Manufacturing methods by local deposition of the material of the layer connector in solid form using a powder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01011Sodium [Na]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0106Neodymium [Nd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1027IV
    • H01L2924/10272Silicon Carbide [SiC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/1033Gallium nitride [GaN]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1453Applying the circuit pattern before another process, e.g. before filling of vias with conductive paste, before making printed resistors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
  • Manufacturing Of Electric Cables (AREA)
EP05723019A 2004-02-18 2005-02-14 Nanomassstab-metallpaste zur verbindung und benutzungsverfahren Withdrawn EP1716578A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54513904P 2004-02-18 2004-02-18
PCT/US2005/004567 WO2005079353A2 (en) 2004-02-18 2005-02-14 Nanoscale metal paste for interconnect and method of use

Publications (2)

Publication Number Publication Date
EP1716578A2 EP1716578A2 (de) 2006-11-02
EP1716578A4 true EP1716578A4 (de) 2009-11-11

Family

ID=34886114

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05723019A Withdrawn EP1716578A4 (de) 2004-02-18 2005-02-14 Nanomassstab-metallpaste zur verbindung und benutzungsverfahren

Country Status (5)

Country Link
EP (1) EP1716578A4 (de)
JP (1) JP2007527102A (de)
KR (1) KR20070033329A (de)
CN (1) CN1961381A (de)
WO (1) WO2005079353A2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770379B2 (ja) * 2005-10-13 2011-09-14 富士電機株式会社 金属部材の接合方法およびその組立治具
JP4638382B2 (ja) * 2006-06-05 2011-02-23 田中貴金属工業株式会社 接合方法
CN100435366C (zh) * 2006-06-08 2008-11-19 天津大学 以纳米银焊膏低温烧结封装连接大功率led的方法
DE102006047395A1 (de) * 2006-10-06 2008-04-10 Robert Bosch Gmbh Verfahren zur Herstellung eines Sensorbauelements und Sensorbauelement
WO2009006318A1 (en) 2007-06-29 2009-01-08 Artificial Muscle, Inc. Electroactive polymer transducers for sensory feedback applications
US8304062B2 (en) * 2007-07-20 2012-11-06 Fry's Metals, Inc. Electrical conductors and methods of making and using them
DE102007022338B4 (de) * 2007-07-26 2013-12-05 Semikron Elektronik Gmbh & Co. Kg Herstellungsverfahren für ein Leistungshalbleiterbauelement mit Metallkontaktschicht
JP2009138243A (ja) * 2007-12-07 2009-06-25 Dowa Electronics Materials Co Ltd 極性媒体との親和性に優れた銀微粉および銀インク並びに銀粒子の製造方法
US8968608B2 (en) 2008-01-17 2015-03-03 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
JP5642336B2 (ja) * 2008-02-06 2014-12-17 富士電機株式会社 半導体装置およびその製造方法
US8253233B2 (en) 2008-02-14 2012-08-28 Infineon Technologies Ag Module including a sintered joint bonding a semiconductor chip to a copper surface
US8421247B2 (en) * 2008-04-30 2013-04-16 Hitachi Chemical Company, Ltd. Connecting material having metallic particles of an oxygen state ratio and size and semiconductor device having the connecting material
US7682875B2 (en) 2008-05-28 2010-03-23 Infineon Technologies Ag Method for fabricating a module including a sintered joint
US20100000762A1 (en) 2008-07-02 2010-01-07 Applied Nanotech Holdings, Inc. Metallic pastes and inks
DE102008034946B4 (de) * 2008-07-26 2016-05-19 Semikron Elektronik Gmbh & Co. Kg Herstellungsverfahren eines Edelmetallverbindungsmittels
DE102008039828A1 (de) * 2008-08-27 2010-03-04 W.C. Heraeus Gmbh Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess
US7754533B2 (en) 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
DE102008055137A1 (de) 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102008055134A1 (de) 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102009008926B4 (de) 2009-02-13 2022-06-15 Danfoss Silicon Power Gmbh Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
DE102009022660B3 (de) * 2009-05-26 2010-09-16 Semikron Elektronik Gmbh & Co. Kg Befestigung eines Bauelements an einem Substrat und/oder eines Anschlusselementes an dem Bauelement und/oder an dem Substrat durch Drucksinterung
DE102009040076A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit Oxidationsmittel
DE102009040078A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit CO-Vorläufern
US8637379B2 (en) 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
DE102010001666A1 (de) 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil
ES2495390T3 (es) * 2010-03-12 2014-09-17 Clariant International Ag Producción de revestimientos de superficie conductivos con dispersión con nanopartículas de plata estabilizadas de forma electrostática
US20110256383A1 (en) 2010-04-01 2011-10-20 Bayer Materialscience Ag Polymer material comprising a polymer and silver nanoparticles dispersed herein
JP5861049B2 (ja) * 2010-04-22 2016-02-16 パナソニックIpマネジメント株式会社 固体電解コンデンサおよび固体電解コンデンサの製造方法
DE102010044326A1 (de) * 2010-09-03 2012-03-08 Heraeus Materials Technology Gmbh & Co. Kg Verwendung von aliphatischen Kohlenwasserstoffen und Paraffinen als Lösemittel in Silbersinterpasten
SG190123A1 (en) * 2010-11-03 2013-06-28 Fry Metals Inc Sintering materials and attachment methods using same
WO2012118916A2 (en) 2011-03-01 2012-09-07 Bayer Materialscience Ag Automated manufacturing processes for producing deformable polymer devices and films
CN103703404A (zh) 2011-03-22 2014-04-02 拜耳知识产权有限责任公司 电活化聚合物致动器双凸透镜系统
CN102290117B (zh) * 2011-04-25 2013-03-06 深圳市唯特偶新材料股份有限公司 一种低温烧结纳米银浆及其制备方法
FR2978301B1 (fr) 2011-07-18 2013-08-02 Renault Sa Procede d'assemblage d'un transducteur ultrasonore et transducteur obtenu par le procede
EP2560468A1 (de) 2011-08-19 2013-02-20 ABB Research Ltd. Verfahren zur gegenseitigen Verbindung von Elementen aus einer Vielzahl von Elementen
DE102011083893A1 (de) * 2011-09-30 2013-04-04 Robert Bosch Gmbh Ausgangswerkstoff einer Sinterverbindung und Verfahren zur Herstellung der Sinterverbindung
DE102011083926A1 (de) * 2011-09-30 2013-04-04 Robert Bosch Gmbh Schichtverbund aus einer Trägerfolie und einer Schichtanordnung umfassend eine sinterbare Schicht aus mindestens einem Metallpulver und eine Lotschicht
CN103170617B (zh) * 2011-12-23 2016-04-27 比亚迪股份有限公司 一种改性Ag膏及其应用以及功率模块中芯片和基体连接的烧结方法
US9888568B2 (en) 2012-02-08 2018-02-06 Crane Electronics, Inc. Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module
US9876160B2 (en) 2012-03-21 2018-01-23 Parker-Hannifin Corporation Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices
WO2013192143A1 (en) 2012-06-18 2013-12-27 Bayer Intellectual Property Gmbh Stretch frame for stretching process
WO2014066576A1 (en) 2012-10-24 2014-05-01 Bayer Intellectual Property Gmbh Polymer diode
CN103137831A (zh) * 2013-02-21 2013-06-05 深圳市瑞丰光电子股份有限公司 一种led灯及其封装方法
JP2013151753A (ja) * 2013-03-04 2013-08-08 Dowa Electronics Materials Co Ltd 極性媒体との親和性に優れた銀微粉および銀インク
JP6185269B2 (ja) * 2013-03-27 2017-08-23 京セラ株式会社 電子装置および電子装置の製造方法
WO2015126807A1 (en) * 2014-02-24 2015-08-27 Henkel Ag & Co. Kgaa Sinterable metal particles and the use thereof in electronics applications
DE102014104272A1 (de) 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und Clip jeweils für ein Halbleiterelement, Verfahren zur Herstellung, Verwendung und Sinterpaste
US20160064630A1 (en) * 2014-08-26 2016-03-03 Texas Instruments Incorporated Flip chip led package
US9230726B1 (en) 2015-02-20 2016-01-05 Crane Electronics, Inc. Transformer-based power converters with 3D printed microchannel heat sink
FR3041210B1 (fr) * 2015-09-15 2017-09-15 Sagem Defense Securite Procede d'assemblage par frittage d'argent sans pression
CN108603295A (zh) * 2016-01-29 2018-09-28 惠普发展公司,有限责任合伙企业 金属连接的粒子制品
CN106271200B (zh) * 2016-08-23 2019-06-07 天津大学 一种高温环境下耐Ag迁移的Ag-Pd纳米焊膏的制备方法
US10492297B2 (en) 2017-02-22 2019-11-26 Xerox Corporation Hybrid nanosilver/liquid metal ink composition and uses thereof
CN107175433A (zh) * 2017-04-19 2017-09-19 天津大学 一种低温烧结的锡掺杂纳米银焊膏的制备方法
CN107252891A (zh) * 2017-05-08 2017-10-17 上海大学 二步烧结纳米银浆制备微电子互连材料的方法
JPWO2019092960A1 (ja) * 2017-11-13 2020-11-12 日東電工株式会社 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ
CN109277722B (zh) * 2018-10-06 2021-04-30 天津大学 一种改善银电化学迁移的Ag-Si纳米焊膏的制备方法
TW202100266A (zh) * 2019-03-22 2021-01-01 日商播磨化成股份有限公司 金屬糊、接合方法及接合體之製造方法
CN110380078A (zh) * 2019-07-19 2019-10-25 哈尔滨工业大学 用于金属支撑型固体氧化物燃料电池的低温封接结构及封接方法
CN112996338A (zh) * 2019-12-12 2021-06-18 秦文隆 超薄型均温板及其制造方法
CN114864134A (zh) * 2022-05-31 2022-08-05 深圳市百柔新材料技术有限公司 一种纳米合金复合低温浆料、制备方法及其应用
CN116092720A (zh) * 2022-12-02 2023-05-09 广东华智芯电子科技有限公司 含银复合浆料及其制备方法、粘接材料以及应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07126556A (ja) * 1993-11-04 1995-05-16 Tatsuta Electric Wire & Cable Co Ltd 導電性樹脂組成物
WO2004005413A1 (en) * 2002-07-03 2004-01-15 Nanopowders Industries Ltd. Low sintering temperatures conductive nano-inks and a method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333966A (en) * 1979-07-30 1982-06-08 Graham Magnetics, Inc. Method of forming a conductive metal pattern
US5882722A (en) * 1995-07-12 1999-03-16 Partnerships Limited, Inc. Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
US5855820A (en) * 1997-11-13 1999-01-05 E. I. Du Pont De Nemours And Company Water based thick film conductive compositions
JP2001135138A (ja) * 1999-10-29 2001-05-18 Matsushita Electric Ind Co Ltd 導体ペースト
JP3764349B2 (ja) * 2001-05-07 2006-04-05 ハリマ化成株式会社 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07126556A (ja) * 1993-11-04 1995-05-16 Tatsuta Electric Wire & Cable Co Ltd 導電性樹脂組成物
WO2004005413A1 (en) * 2002-07-03 2004-01-15 Nanopowders Industries Ltd. Low sintering temperatures conductive nano-inks and a method for producing the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
WONG WAI KWAN ET AL: "Low temperature sintering process for deposition of nano-structured metal for nano IC packaging", ELECTRONICS PACKAGING TECHNOLOGY, 2003 5TH CONFERENCE (EPTC 2003) DEC. 10-12, 2003, PISCATAWAY, NJ, USA,IEEE, 10 December 2003 (2003-12-10), pages 551 - 556, XP010687352, ISBN: 978-0-7803-8205-3 *
ZHANG Z ET AL: "PRESSURE-ASSISTED LOW-TEMPERATURE SINTERING OF SILVER PASTE AS AN ALTERNATIVE DIE-ATTACH SOLUTION TO SOLDER REFLOW", IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 25, no. 4, 1 October 2002 (2002-10-01), pages 279 - 283, XP001143650, ISSN: 1523-334X *
ZHANG ZHIYE ET AL: "NANOSCALE SILVER SINTERING FOR HIGH-TEMPERATURE PACKAGING OF SEMICONDUCTOR DEVICES", MATERIALS PROCESSING AND MANUFACTURING DIVISION. GLOBAL SYMPOSIUM SURFACES AND INTERFACES IN NANOSTRUCTURED MATERIALS AND TRENDS IN LIGA, MINIATURIZATION AND NANOSCALE MATERIALS, 14-18 MARCH, CHARLOTTE, NC, US, 2004, TMS, WARRENDALE, PA, US, pages 129 - 135, XP001248317 *

Also Published As

Publication number Publication date
EP1716578A2 (de) 2006-11-02
KR20070033329A (ko) 2007-03-26
WO2005079353A3 (en) 2005-12-08
WO2005079353A2 (en) 2005-09-01
CN1961381A (zh) 2007-05-09
JP2007527102A (ja) 2007-09-20

Similar Documents

Publication Publication Date Title
EP1716578A4 (de) Nanomassstab-metallpaste zur verbindung und benutzungsverfahren
EP1731624A4 (de) Kupferlegierung und herstellungsverfahren dafür
EP1769846A4 (de) Metallkatalysator und herstellungsverfahren dafür
EP1992012A4 (de) Neue struktur und verfahren zur metallintegration
IL177413A0 (en) Method for anodizing metallic surfaces and compositions therefore
GB2454401B (en) Method of connecting metal material
EP1767491A4 (de) Verfahren zur herstellung einer nanostruktur und nanostruktur
EP1888311A4 (de) Beschichtete metalloxidnanoteilchen und herstellungsverfahren dafür
EP1701810A4 (de) Räder für einkomponentenkonstruktion und herstellungsverfahren dafür
EP1808265A4 (de) Lötpaste und diese verwendendes lötverfahren
TWI350207B (en) Coating device and coating method
SG113555A1 (en) Metal contact structure and method of manufacture
GB0508501D0 (en) Metal alloy and its use
GB0708824D0 (en) Improved underreamer and method of use
ZA200605722B (en) Composition and method
EP1946007A4 (de) Androsteron-derivate und verwendungsverfahren dafür
EP1840948A4 (de) Feinbehandlungsmittel und dieses verwendende feinbehandlungsverfahren
GB2414742B (en) Method and device for remelting metal surfaces
EP2051772A4 (de) Passivierte metallleiter zur verwendung in herzableitungen und verfahren zu ihrer herstellung
EP1954626A4 (de) Mehrfunktions-nanostruktur und verfahren
IL190583A0 (en) Pth formulations and methods of use
EP1794760A4 (de) Vorrichtung und verfahren mit dem potential elektrochemischer korrosion
GB2431112B (en) Condom and production method thereof
EP1767669A4 (de) Konstruktion und verfahren zur verhinderung der elektrolytischen korrosion der konstruktion
GB0414040D0 (en) Metal fabrication method and apparatus

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20060818

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H05K 3/32 20060101ALI20090903BHEP

Ipc: H01B 1/22 20060101ALI20090903BHEP

Ipc: H01L 21/60 20060101AFI20090903BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20090909

17Q First examination report despatched

Effective date: 20110315

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20110927