CN102290117B - 一种低温烧结纳米银浆及其制备方法 - Google Patents
一种低温烧结纳米银浆及其制备方法 Download PDFInfo
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- CN102290117B CN102290117B CN2011101043994A CN201110104399A CN102290117B CN 102290117 B CN102290117 B CN 102290117B CN 2011101043994 A CN2011101043994 A CN 2011101043994A CN 201110104399 A CN201110104399 A CN 201110104399A CN 102290117 B CN102290117 B CN 102290117B
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- silver paste
- nano silver
- percent
- low temperature
- sintered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011101043994A CN102290117B (zh) | 2011-04-25 | 2011-04-25 | 一种低温烧结纳米银浆及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011101043994A CN102290117B (zh) | 2011-04-25 | 2011-04-25 | 一种低温烧结纳米银浆及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN102290117A CN102290117A (zh) | 2011-12-21 |
CN102290117B true CN102290117B (zh) | 2013-03-06 |
Family
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CN2011101043994A Active CN102290117B (zh) | 2011-04-25 | 2011-04-25 | 一种低温烧结纳米银浆及其制备方法 |
Country Status (1)
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CN (1) | CN102290117B (zh) |
Cited By (1)
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CN107680949A (zh) * | 2017-09-08 | 2018-02-09 | 苏州汉尔信电子科技有限公司 | 一种低温纳米锡浆料的制备方法及封装方法 |
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CN102637598A (zh) * | 2012-04-18 | 2012-08-15 | 润奥电子(扬州)制造有限公司 | 一种制备大功率半导体器件管芯的方法 |
CN102738138A (zh) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | 一种针对电动汽车应用的igbt功率模块 |
JP2014098186A (ja) * | 2012-11-14 | 2014-05-29 | Mitsui Mining & Smelting Co Ltd | 銀粉 |
CN103559957B (zh) * | 2013-09-22 | 2016-11-23 | 江苏瑞德新能源科技有限公司 | 一种正银浆料的制备方法 |
CN103706959B (zh) * | 2013-11-27 | 2016-08-17 | 中国科学院合肥物质科学研究院 | 一种用于单根一维纳米材料焊接的助焊料及其焊接方法 |
CN105127435B (zh) * | 2015-09-24 | 2017-06-23 | 桂林电子科技大学 | 一种低温烧结纳米银浆及制备工艺 |
CN105414556A (zh) * | 2015-11-27 | 2016-03-23 | 上海无线电设备研究所 | 一种水基纳米银浆减薄方法及其用途 |
CN105761779B (zh) * | 2016-04-22 | 2017-07-04 | 无锡南理工科技发展有限公司 | 用于太阳能电池的低温固化导电银浆料 |
CN107252891A (zh) * | 2017-05-08 | 2017-10-17 | 上海大学 | 二步烧结纳米银浆制备微电子互连材料的方法 |
CN107271232A (zh) * | 2017-05-08 | 2017-10-20 | 上海大学 | 低温烧结纳米银浆热导率测试样品的制备方法 |
CN107833651A (zh) * | 2017-10-25 | 2018-03-23 | 哈尔滨工业大学深圳研究生院 | 一种复合纳米银膏及快速烧结封装方法 |
CN108062996B (zh) * | 2017-12-14 | 2019-11-22 | 中国科学院深圳先进技术研究院 | 一种自放热无压烧结导电银浆及其制备方法 |
US11070190B2 (en) | 2018-03-27 | 2021-07-20 | Statek Corporation | Silver-bonded quartz crystal |
CN109354701A (zh) * | 2018-09-06 | 2019-02-19 | 四川顶立胶业有限公司 | 一种环保型松香溶液的制备方法 |
CN109979639A (zh) * | 2019-02-18 | 2019-07-05 | 英鸿纳米科技股份有限公司 | 一种纳米芯片封装用混合型导电银浆 |
CN112457825A (zh) * | 2020-11-30 | 2021-03-09 | 哈尔滨工业大学 | 一种具有高导热、低烧结温度的浆料的制备方法和应用 |
CN116031012B (zh) * | 2023-01-10 | 2023-09-22 | 惠州市帕克威乐新材料有限公司 | 一种纳米导电银浆及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007527102A (ja) * | 2004-02-18 | 2007-09-20 | バージニア テック インテレクチュアル プロパティーズ インコーポレーテッド | 相互接続用のナノスケールの金属ペーストおよび使用方法 |
CN100499940C (zh) * | 2006-07-28 | 2009-06-10 | 王克政 | 基于金属基板的稀土厚膜电路稀土电极浆料及其制备工艺 |
CN101206957B (zh) * | 2007-12-07 | 2010-04-21 | 宁波晶鑫电子材料有限公司 | 低温烘干圆片电容电极银浆制备 |
CN100552831C (zh) * | 2008-02-27 | 2009-10-21 | 中南大学 | 基于半导体芯片粘结用低温烧结型导电浆料及其制备工艺 |
CN101710497B (zh) * | 2009-12-08 | 2011-04-20 | 华中科技大学 | 一种纳米银导电浆料 |
-
2011
- 2011-04-25 CN CN2011101043994A patent/CN102290117B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107680949A (zh) * | 2017-09-08 | 2018-02-09 | 苏州汉尔信电子科技有限公司 | 一种低温纳米锡浆料的制备方法及封装方法 |
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Publication number | Publication date |
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CN102290117A (zh) | 2011-12-21 |
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Correction item: Patentee Correct: Harbin Institute of Technology Shenzhen Graduate School False: Harbin Institute of Technology Number: 10 Volume: 29 |
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Correction item: Patentee Correct: Harbin Institute of Technology Shenzhen Graduate School False: Harbin Institute of Technology Number: 10 Page: The title page Volume: 29 |
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Free format text: CORRECT: PATENTEE; FROM: HARBIN INDUSTRY UNIVERSITY TO: HARBIN INSTITUTE OF TECHNOLOGY SHENZHEN GRADUATE SCHOOL |
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