CN102290117B - 一种低温烧结纳米银浆及其制备方法 - Google Patents

一种低温烧结纳米银浆及其制备方法 Download PDF

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CN102290117B
CN102290117B CN2011101043994A CN201110104399A CN102290117B CN 102290117 B CN102290117 B CN 102290117B CN 2011101043994 A CN2011101043994 A CN 2011101043994A CN 201110104399 A CN201110104399 A CN 201110104399A CN 102290117 B CN102290117 B CN 102290117B
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王永
吴晶
唐欣
李明雨
王帅
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SHENZHEN VITAL NEW MATERIAL COMPANGY Ltd
Harbin Institute of Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/29294Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/203Ultrasonic frequency ranges, i.e. KHz

Abstract

本发明公开了一种低温烧结纳米银浆及其制备方法,其特征在于:纳米银浆组分与重量质量百分比如下:平均粒径为20~50nm的纳米银粉78.5~89.5%;有机载体聚乙烯醇5.0~10.0%;有机溶剂柠檬酸三丁酯5.0~10.0%;表面活性剂松香酸0.5~1.5%。纳米银浆制备方法依次有以下步骤:将乙醇溶液水域加热、加入组分混合、摄氏零度超声分散、机械搅动和真空烘干。本发明银浆的烧结温度显著降低,不必高达玻璃料的软化温度,且烧结后材料的含银量至少为98%,具有高热导率和高可靠性,其热导率比合金焊料高3~4倍,有效地解决了封装的散热问题。尤其适合应用于电子封装领域中作为功率型芯片互连的新型热界面材料。

Description

一种低温烧结纳米银浆及其制备方法
技术领域
本发明涉及银浆,特别是涉及一种低温烧结纳米银浆。
背景技术
现有电子封装领域中的热界面材料在集成芯片和其他元器件的散热方面起着至关重要的作用。银浆是一种具有较高热导率和较高可靠性的互连热界面材料,由于现有银浆的烧结温度过高,尚不能应用于电子封装领域中的功率型芯片互连。
发明内容
本发明所要解决的一个技术问题是弥补上述现有技术的缺陷,提供一种低温烧结纳米银浆。
本发明所要解决的另一个技术问题是弥补上述现有技术的缺陷,提供一种低温烧结纳米银浆的制备方法。
本发明的低温烧结纳米银浆技术问题通过以下技术方案予以解决。
这种低温烧结纳米银浆,其组分包括有机溶剂、有机载体、表面活性剂和银粉。
这种低温烧结纳米银浆的特点是:
其组分与重量百分比如下:
平均粒径为20~50nm的纳米银粉 78.5~89.5%;
有机载体聚乙烯醇             5.0~10.0%;
有机溶剂柠檬酸三丁酯         5.0~10.0%;
表面活性剂松香酸             0.5~1.5%。
采用本身具有高表面活性能的纳米级颗粒银粉,在烧结时所需要的外加驱动力即温度很低;使银浆具有低温烧结性能,且通过银原子相互扩散实现与镀银基板和芯片之间互连,不必添加玻璃料增加与镀银基板和芯片之间的结合强度,因此,烧结温度不必高达玻璃料的软化温度,且烧结后的材料银含量高达98%以上,具有高导热率,适合应用于电子封装领域中作为芯片互连的新型热界面材料。
本发明的低温烧结纳米银浆技术问题通过以下进一步的技术方案予以解决。
优选的是,其组分与重量百分比如下:
平均粒径为20~50nm的纳米银粉    82.0%;。
有机载体聚乙烯醇                8.0%;
有机溶剂柠檬酸三丁酯            9.1%;
表面活性剂松香酸                0.9%。
本发明的低温烧结纳米银浆技术问题通过以下再进一步的技术方案予以解决。
所述低温烧结纳米银浆的烧结温度为200~350℃,保温时间为10~60分钟。
所述低温烧结纳米银浆烧结后的材料热导率为160~250W/(K·m)。
本发明的低温烧结纳米银浆制备方法技术问题通过以下技术方案予以解决。
这种低温烧结纳米银浆制备方法,依次有以下步骤:
1)将乙醇溶液水域加热至60~80℃,加入有机溶剂、表面活性剂,机械搅拌混合均匀;
2)在50~90℃水浴加热下加入有机载体,机械搅拌混合均匀;
3)待混合物冷却至20~30℃后加入纳米银粉中;
4)对整个体系进行摄氏零度超声分散及机械搅动1~2小时;
5)真空烘干,使乙醇溶液挥发,制得纳米银浆成品。
本发明与现有技术对比的有益效果是:
本发明银浆的烧结温度显著降低,不必高达玻璃料的软化温度,且烧结后材料的含银量至少为98%,具有高热导率和高可靠性,其热导率比合金焊料高3~4倍,有效地解决了封装的散热问题。尤其适合应用于电子封装领域中作为功率型芯片互连的新型热界面材料。
具体实施方式
下面结合具体实施方式对本发明进行说明。
具体实施方式一
一种低温烧结纳米银浆,其组分与重量百分比如下:
平均粒径为35nm的纳米银粉    82.0%;。
有机载体聚乙烯醇            8.0%;
有机溶剂柠檬酸三丁酯        9.1%;
表面活性剂松香酸            0.9%。
制备方法,依次有以下步骤:
1)将乙醇溶液水域加热至70℃,加入重量百分比为9.1%有机溶剂柠檬酸三丁酯、重量百分比为0.9%的表面活性剂松香酸,机械搅拌混合均匀;
2)在80℃水浴加热下加入重量百分比为8.0%的机载体聚乙烯醇,机械搅拌混合均匀;
3)待混合物冷却至20℃后加入重量百分比为82.0%、平均粒径为35nm的纳米银粉;
4)对整个体系进行摄氏零度超声分散及机械搅动2.0小时;
5)真空烘干,使乙醇溶液挥发,制得纳米银浆成品。
测试表明:具体实施方式一制得的纳米银浆可以在低温烧结并且得到较致密的烧结组织,能够与表面镀银的芯片和基体形成良好的结合,烧结后的材料接头剪切强度为38MPa,热导率高达193.7W/(K·m),比合金焊料高3~4倍。
具体实施方式二
一种低温烧结纳米银浆,其组分与重量百分比如下:
平均粒径为50nm的纳米银粉    78.5%;
有机载体聚乙烯醇            10.0%;
有机溶剂柠檬酸三丁酯        10.0%;
表面活性剂松香酸            1.5%。。
制备方法基本同具体实施方式一,区别在于:
步骤1)将乙醇溶液水域加热至80℃;
步骤4)对整个体系进行机械搅动1.5小时。
具体实施方式三
一种低温烧结纳米银浆,其组分与重量百分比如下:
平均粒径为20nm的纳米银粉    89.5%;
有机载体聚乙烯醇            4.5%;
有机溶剂柠檬酸三丁酯        5.5%;
表面活性剂松香酸            0.5%。。
制备方法基本同具体实施方式一,区别在于:
步骤1)将乙醇溶液水域加热至60℃;
步骤4)对整个体系进行机械搅动1.0小时。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下做出若干等同替代或明显变型,而且性能或用途相同,都应当视为属于本发明由所提交的权利要求书确定的专利保护范围。

Claims (5)

1.一种低温烧结纳米银浆,其组分包括有机溶剂、有机载体、表面活性剂和银粉,其特征在于:
其组分与重量百分比如下:
2.如权利要求1所述的低温烧结纳米银浆,其特征在于:
其组分与重量百分比如下:
Figure FSB00000860458500012
3.如权利要求1或2所述的低温烧结纳米银浆,其特征在于:烧结温度为200~350℃,保温时间为10~60分钟。
4.如权利要求3所述的低温烧结纳米银浆,其特征在于:
烧结后的材料热导率为160~250W/(K·m)。
5.一种低温烧结纳米银浆制备方法,其特征在于:
依次有以下步骤:
1)将乙醇溶液水域加热至60~80℃,加入有机溶剂柠檬酸三丁酯5.0~10.0%、表面活性剂松香酸0.5~1.5%,机械搅拌混合均匀;
2)在50~90℃水浴加热下加入有机载体聚乙烯醇5.0~10.0%,机械搅拌混合均匀;
3)待混合物冷却至20~30℃后加入纳米银粉中;
4)对整个体系进行摄氏零度超声分散及机械搅动1~2小时;
5)真空烘干,使乙醇溶液挥发,制得纳米银浆成品。
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CN107680949A (zh) * 2017-09-08 2018-02-09 苏州汉尔信电子科技有限公司 一种低温纳米锡浆料的制备方法及封装方法

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