CN102738138A - 一种针对电动汽车应用的igbt功率模块 - Google Patents

一种针对电动汽车应用的igbt功率模块 Download PDF

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CN102738138A
CN102738138A CN2012101823505A CN201210182350A CN102738138A CN 102738138 A CN102738138 A CN 102738138A CN 2012101823505 A CN2012101823505 A CN 2012101823505A CN 201210182350 A CN201210182350 A CN 201210182350A CN 102738138 A CN102738138 A CN 102738138A
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igbt
insulating substrate
ceramic insulating
electric automobile
chip
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刘志宏
汪水明
姚礼军
金晓行
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

本发明公开了一种针对电动汽车应用的IGBT功率模块，它包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器，其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层，在金属层表面或镀有镍材料；所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上；功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。本发明适合应用于电动汽车的电机控制器。

Description

一种针对电动汽车应用的IGBT功率模块
技术领域
本发明涉及应用于电动汽车动力电机控制器的IGBT模块，该模块主要功能是对驱动电机的电流和电压的幅值、相位和频率进行控制，以实现对车辆机动性能的准确控制。 
背景技术
目前因为能源短缺的影响，节能环保型的电动汽车和混合动力汽车成为汽车行业发展的趋势。电动汽车的核心部件是电池、电机和电控装置，而IGBT模块则是电控装置的核心部件，起着将电池中存储的电压恒定的直流电转变为幅值、相位和频率可调的交流电的作用，在整个电能的转化利用过程中担负着极其重要的作用。
对应用于电动汽车电控装置的IGBT模块的主要要求有：1）高效率：电池的储能有限，需要提供能源的利用效率以提高电动汽车的续驶里程；2）高可靠性：该模块工作在高电压、大电流、高温、震动和工况复杂的环境，对模块的抗功率循环、温度循环和震动有较高要求，需要满足汽车寿命的要求；3）功率密度高、体积小：汽车应用要求功能部件的结构紧凑、体积小、有最大的功率输出能力；针对以上电动汽车行业的要求，目前业界在积极探索适用于电动汽车行业应用的IGBT模块。现有开发的IGBT模块主要针对工业级应用，如：变频器、逆变焊机和感应加热等，这些应用场合对模块的功率密度、可靠性要求没有电动汽车高，同时工况和抗震动特性也是电动汽车特有的要求，为此需要开发针对电动汽车的IGBT模块。
发明内容：
本发明的目的是设计出一种针对电动汽车应用的IGBT功率模块。
本发明要解决的是现有IGBT模块功率密度低、可靠性差，抗震动性弱等的问题。
本发明的技术方案是：它包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器，其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层，在金属层表面或镀有镍材料；所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上；功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。
本发明具有高功率密度高、高可靠性、高散热效率的优点。适合应用于电动汽车的电机控制器。
附图说明
图1为本发明IGBT模块的结构示意图。
图2为本发明IGBT模块内部连接结构局部放大示意图。 
具体实施方式
下面结合附图及具体实施例对本发明作进一步的说明。
如图所示，本发明包括IGBT芯片1、二极管芯片2、绝缘陶瓷基板3、功率端子5、信号端子6、塑料外壳7和液冷散热器4。绝缘陶瓷基板3两侧的金属层为铜质材料层或铝质材料层，在金属层表面或镀有镍材料。所述的IGBT芯片1、二极管芯片2采用银浆烧结（silver sintering technology）焊接于绝缘陶瓷基板3上，银具有熔点为961度，以大幅度提高焊接的抗疲劳强度。功率端子5和信号端子6通过超声焊接在绝缘陶瓷基板3的金属层上。
绝缘陶瓷基板3通过软钎焊料焊接到液冷散热器4上，该焊料采用SnAgCu或SnAg焊料，以符合无铅要求，同时具有较高的抗疲劳强度。绝缘陶瓷基板3下有优化设计的水道，通过这种结构可以避免传统模块的基板及涂覆导热硅脂，可以提高散热效率，减小装置体积和重量。
本发明的功率端子5和信号端子6通过注塑的方式嵌入注塑在塑料外壳7中，以提高模块和外部接触的抗冲击和震动能力。功率端子5和信号端子6下端部为裸铜，通过超声焊接焊接到绝缘陶瓷基板3上，通过超声焊接可以实现铜和铜的结合，结合强度远远高于传统的软钎焊连接。
功率端子5安装孔下方嵌入有安装螺丝，通过塑料外壳7予以固定，塑料外壳7通过底部的螺丝与液冷散热器4固定在一起。通过这种方式可以提高模块的抗机械冲击效果。
采用铜线键合技术，利用铜线8来实现芯片之间、芯片与绝缘陶瓷基板3之间和绝缘陶瓷基板之间的电气连接。

Claims (4)

1.一种针对电动汽车应用的IGBT功率模块，包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器，其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层，在金属层表面或镀有镍材料；所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上；功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。
2.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块，其特征在于功率端子和信号端子通过注塑的方式嵌入到塑料外壳中。
3.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块，其特征在于绝缘陶瓷基板通过软钎焊料焊接到液冷散热器上。
4.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块，其特征在于绝缘陶瓷基板中的陶瓷采为Si3N4或AlN或HPS材料。
CN2012101823505A 2012-06-05 2012-06-05 一种针对电动汽车应用的igbt功率模块 Pending CN102738138A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779294A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种利用水冷散热器双面散热的模块功率封装结构
WO2015010567A1 (zh) * 2013-07-23 2015-01-29 西安永电电气有限责任公司 塑封式智能功率模块及其散热器结构
CN109755196A (zh) * 2018-12-29 2019-05-14 上海大郡动力控制技术有限公司 新能源汽车电机控制器中分立式igbt冷却布置结构

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN103779294A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种利用水冷散热器双面散热的模块功率封装结构
CN109755196A (zh) * 2018-12-29 2019-05-14 上海大郡动力控制技术有限公司 新能源汽车电机控制器中分立式igbt冷却布置结构

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Application publication date: 20121017