CN100517676C - 半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车 - Google Patents
半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车 Download PDFInfo
- Publication number
- CN100517676C CN100517676C CNB2005100876844A CN200510087684A CN100517676C CN 100517676 C CN100517676 C CN 100517676C CN B2005100876844 A CNB2005100876844 A CN B2005100876844A CN 200510087684 A CN200510087684 A CN 200510087684A CN 100517676 C CN100517676 C CN 100517676C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- silver
- conductor
- conductor layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
- H01L23/4928—Bases or plates or solder therefor characterised by the materials the materials containing carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27505—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/37666—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/8484—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
提供在高温环境下也能保持长期信赖度的功率半导体器件。该半导体器件,采用在半导体芯片的一个面和另一面分别引出主电流的输入输出电极的一个和另一个的半导体元件,通过将上述输入输出电极的一个连接在绝缘基板的导体层上,使上述绝缘基板支持上述半导体元件,其特征在于:上述半导体芯片的输入输出电极的另一个与上述绝缘基板的导体层的连接,采用了由碳和铝或者碳和铜的复合材料构成的导体条片,且上述导体条片与上述半导体芯片的输入输出电极的另一个以及上述导体条片与上述绝缘基板的导体层通过从金、银、镍、铜、铝、锌、锡、铟、铋、锑中选择的至少2种纳米尺寸和微米尺寸的金属粒子的混合物紧固地连接在一起。
Description
技术领域
本发明与较大功率容量的半导体器件有关,尤其是与在发动机室内等高温环境下,也能充分发挥性能的半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车有关。
背景技术
近年来,从节省能源和环境污染方面来看,同时使用内燃机和电动机,移动的驱动力依存于这两者的所谓的混合动力汽车以及移动驱动力只依存于电动机的电力车倍受关注,已被使用,但是这种情况下,作为电动机,从控制效率的高低及单纯构造方面来看,使用的主要是感应电动机和同步电动机等的交流电动机。
这时,作为电源,混合动力汽车一般使用蓄电池和电容器,电力车主要使用燃料电池,所以不管怎么样,将直流电转换为交流电的变换装置即所谓的逆变器是必需的,这里面采用了功率半导体器件。
但是,此功率半导体器件,半导体芯片和设置在其周围的外部电极的连接,通常情况下多采用铝制的金属丝,但是这时,在高温环境下,会出现因铝和硅的热膨胀差而引起的功率半导体芯片和键合线的连接部分剥落的问题。
因此,为了防止此功率半导体芯片和键合线的连接部分的剥落,以前的技术是用导电性树脂将粘贴了低热膨胀材料的汇流条布线连接在功率半导体元件的上面电极上的构造。(比如,参照专利文献1)。
专利文献1特开2000-183249号公报
上述以前的技术,可以说它没有考虑到高温环境下的信赖度的保持,它存在着适用对象受限制的问题。
比如,上述汽车,因为发动机附近是在高温环境下,所以在这种情况下使用时,用以前的技术会因为以下列举的原因在信赖度方面出现问题。
首先,采用以前的技术,暴露在高温下的话,因为半导体元件温度会一直上升到接近导电性树脂材料的玻化温度,所以该树脂材料的软化加快,连接部分对于压力的承受力变弱,因此,减少发热以抑制功率半导体元件的温度上升是有必要的,但是由于导电性树脂材料的电阻很大,所以很困难。
比如,导电性树脂材料的体电阻率是1Ω·cm,与一般作为连接材料使用的锡-铅共晶钎焊的体电阻率约为15μΩ·cm相比约大7万倍。因此,抑制通电带来的发热量是很困难的。
另外,在将低热膨胀材料贴在铜的汇流条布线的构造中,因为其热膨胀系数不同,所以高温的时候,汇流条布线会比低热膨胀材料热膨胀更多而伸长,低温时会缩小得更多。此现象在高温环境下更明显,因此,上述构造中的汇流条布线会变成弓形。
总之,以前的技术,从功率半导体元件剥下汇流条布线的方向的力量通过汽车的运转,停止(休止)的循环,反复产生,其结果是上述连接部分的剥离很容易发生,信赖度会下降。
而且,如上所述,如果汇流条布线变形为弓形的话,压力还会加在与之连接的功率半导体元件上,所以它同样也会变形为弓形。这时,功率半导体元件和绝缘基板,如以前技术所示的一样,因为是用钎焊等很容易塑性变形的材料连接的,所以功率半导体元件和绝缘基板的连接部分,与上述的情况一样,剥离方向的力量会发生作用,这样高温环境下的长期信赖度的确保就变得很困难。
发明内容
本发明的目的在于提供在高温环境下也能保持长期信赖度的功率半导体器件。
上述目的是如下实现的:在通过采用从半导体芯片的一个面和另一面分别引出主电流的输入输出电极的一个和另一个的半导体元件,通过将上述输入输出电极的一个连接在绝缘基板的导体层上,使上述绝缘基板支持上述半导体元件的半导体器件中,上述半导体芯片的输入输出电极的另一个与上述绝缘基板导体层的连接,采用碳和铝或碳和铜的复合材料构成的导体条片。
这时上述导体条片与上述半导体芯片的输入输出电极的另一个以及上述导体条片与上述绝缘基板的导体层通过从金、银、镍、铜、铝、锌、锡、铟、铋、锑中选择的至少2种纳米尺寸和微米尺寸的金属粒子的混合物紧固地连接在一起,这样也能实现上述的目的。
另外这时,上述输入输出电极的一个,通过从金、银、镍、铜、铝、锌、锡、铟、铋、锑中至少选择2种金属粒子的混合物的连接层,与上述绝缘基板的导体层连接,这样也能实现上述目的。
而且这时,将上述导体条片的连接面用金或银覆盖,或者将上述输入输出电极的一个的连接面及上述绝缘基板的导体层的连接面用金或银覆盖,也能实现上述的目的。
通过本发明,能提高高温环境下半导体元件的连接部分的长期信赖度。
另外,通过本发明,能提高半导体元件的散热。在半导体器件中,进行电流转换的功率半导体元件是温度最高的部件,但是通过本发明,由于能提高放热性,所以能使复合布线板与功率半导体元件的连接部分的温度比以前的将金属丝直接和功率半导体元件连接时低。
连接部分的温度降低意味着这部分的热膨胀的降低,所以,通过本发明,与将金属丝直接和功率半导体元件连接时相比,长期性的信赖度提高了。
另外,本发明的半导体器件可以适用于混合动力汽车用的功率变流器,这时能提供可以搭载在高温环境下,而且即使不使用专门的冷却器也可以确保长期信赖度的功率变流器。
附图说明
图1是表示本发明的功率半导体器件的一实施形态的部分放大剖面图。
图2是表示本发明的功率半导体器件的另一个实施形态的部分放大剖面图。
图3是表示本发明的功率半导体器件的一实施形态的平面图和侧剖面图。
图4是表示本发明的功率半导体器件的一实施形态的主要部分的立体图。
图5是表示本发明的功率半导体器件的一实施形态的等效电路图。
图6是表示本发明的功率半导体器件的一实施形态所适用的逆变器的说明图。
图7是表示金属粒子混合物的连接层的抗剪强度的图。
图8是表示金属粒子的混合物的连接层的剖面图的图。
图9是表示连接层的高温放置特性的图。
101:半导体元件
102a、102b:导体层
103:陶瓷绝缘基板
105:锡系钎焊 110:支承件 111:壳体
112:外部端子
113:键合线
114:密封材料
201:连接用端子(由复合材料构成的连接用的导体)
202a、202b、202c:连接层(以5nm到几十μm的纳米尺寸和微米尺寸的金粒子和银粒子为主要成分的混合物的连接层)
具体实施方式
以下,用图示的实施形态,对本发明的功率半导体器件进行详细的说明。
图3和图4是将本发明运用于逆变器用的绝缘型功率半导体器件时的一个实施形态,图3(a)是平面图,图3(b)是剖面图,图4是立体图,在这些图中,101是半导体元件,102a、102b是导体层,103是陶瓷绝缘基板,110是支承件,111是壳体,112是外部端子,113是键合线,114是密封材料。另外,功率半导体器件本身用100表示。
这里的支承件110是用铜板或铝板做成的,作为支持整体的部件发挥功能的同时,安装在图中未表示的散热片上时也能作为热的传导路径发挥功能。并且,此支承件110的一面(图中为上面)上,如图所示,钎焊了陶瓷绝缘基板103。
此陶瓷绝缘基板103是用氮化硅系陶瓷做成的,做成其两面具备铜的导体层的102a、102b的3层构造,这时,在一个面(图中为上面)上的导体层102a上形成布线图形作为布线基板。并且另一面(图中为下面)上的导体层102b作为将陶瓷绝缘基板103钎焊在支承件110时的连接面起作用。
并且,由此导体层102a构成的布线图形的指定部分搭载了半导体元件101,这里此半导体元件101采用了IGBT(Insulated GateBipolar Transistor:绝缘栅·双极·晶体管),而且采用了主电流的输入电极(如发射极)和输出电极(如集电极)分别从半导体芯片的一面和另一面引出的形式。
这时,半导体元件101并不限于上述的IGBT,也可以采用MOSFET(Metal Oxide Semiconductor Field Effect Transistor:金属氧化物半导体场效应晶体管),这时主电流的输入电极比如就是源极,输出电极比如就是漏极。
这里,此功率半导体器件100如图5所示,形成了逆变器的主电路中的1支路的电路,这时上支路部910和下支路部911分别是由4个IGBT的半导体元件101构成的。另外,为了简略,图4表示的是具备3个半导体元件101时的情况。
这时半导体元件101的各个IGBT如图所示,续流二极管逆向并联地连接着,具备正极侧和负极侧的2个直流端子30A、30B和一个交流输出端子30C,还有4个辅助端子31,内部还设置了检测温度用的热敏电阻34。这里直流端子30A、30B和交流输出端子30C是由外部端子112构成的。
并且,通过将3个功率半导体器件100如图6所示地连接在一起,形成了3相逆变器的主电路,用图中没表示的控制装置,比如用PWM转换控制,能将供给直流端子30A、30B的直流电转换为由U相、V相、W相此3相构成的可变电压可变频率的交流电,从输出端子30C输出,供给感应电动机等的交流电动机M。
回到图3和图4,在这些图中,各个半导体元件101如上所述,搭载在形成布线图形的导体层102a的指定部分,这时,具体说明的话,如图1所示,各个半导体元件101的下侧的表面上的主电流的输入电极(或输出电极)通过锡系钎焊105钎焊、安装在形成布线图形的导体层102a的指定部分。
一方面,各个半导体元件101上面的主电流的输出电极(或者输入电极),通过连接用的导体条片201连接在形成布线图形的导体层102a的指定部分,这时,在此实施形态中,因为既保持了导电性,又能减小热膨胀系数,所以,此导体条片201,采用碳和铝的复合材料的条片或者碳和铜的复合材料的条片,并进行镀镍,然后使用。
而且,此实施形态中,如图1所示,此导体条片201和半导体元件101的输出电极(或输入电极)通过以5nm到几十μm微细的粒径即所谓的纳米尺寸和微米尺寸的金粒子和银粒子为主要成分的混合物的连接层202a连接在一起,导体条片201和导体层102a也同样是通过以5nm到几十μm的纳米尺寸和微米尺寸的金粒子和银粒子为主要成分的混合物的连接层202b连接在一起。
这时,这些连接层202a、202b就形成如下的构造。首先,对半导体元件101的输出电极(或输入电极)、导体层102a,及导体条片201的各自的连接面部分进行镀金。并且,在半导体元件101的输出电极(或输入电极)的表面和导体层102a的表面成为连接面的那部分,涂上了含有上述纳米尺寸和微米尺寸的金粒子和银粒子的混合物的溶液,然后,使溶液飞溅,留下混合物,形成规定厚度的混合物层。
然后,将做成规定形状的导体条片201设置在半导体元件101的输出电极(或输入电极)和导体层102a二者的连接面上,在80摄氏度的环境中,加热60分钟左右。
通过此加热,形成混合物层的纳米尺寸和微米尺寸的金粒子和银粒子互相固溶,导体条片201通过连接层202a与半导体元件101的输出电极(或输入电极)、通过连接层202b与导体层102a紧固地连接在一起,与钎焊一样,实现将导体条片201作为导线的电连接。
这时,金和银形成全率固溶体,通过使之含有纳米尺寸的粒子和微米尺寸的粒子,如上所述,即使在80摄氏度左右的低温下也能形成固溶体,能实现与钎焊一样的连接。
这时的金和银的固溶状态,是纳米粒子特有的现象,与各个粒子单独存在的凝聚体不一样,如上所述,进行机械的连接,仅在80摄氏度下加热就能达到此状态。
而且,像这样一旦连接在一起的话,尽管连接层202a、202b连接时的加热温度是80摄氏度,以后混合材料中熔点低的一方的温度这时在达到银的通常溶融温度之前固溶状态不会熔化,具有保持连接状态的性质,因此,不用担心连接部分的耐热性会出现问题。
因此,通过此实施形态,进行低温处理是可能的,所以,对于制造时暴露在高温情况的担心减少的同时,产品可以用于高温环境,其结果是可以提高长期的信赖度。
这里,图2是半导体元件101与导体层102a连接时不采用锡系钎焊105而与连接层202a、202b一样采用以5nm到几十μm的纳米尺寸和微米尺寸的金粒子和银粒子为主要成分的混合物构成的连接层202c时的实施形态,其他方面与图1相同。
因此,以后只要进行一些必要的处理,像进行键合线113的连接,用密封材料114密封等,不论图1还是图2,都能制作出功率半导体器件100。
这时,考虑到适用于上述汽车,在发动机旁的高温环境下使用的情况,壳体111和密封材料114等构成功率半导体器件100的各部分,不用说都采用了具有耐热性的材料。
这里在这样的功率半导体器件中,不只是半导体元件的集电极,发射电极部分也有强大电流流动,这时,在此实施形态的功率半导体器件100中,图1和图2都采用了布线宽度大的导体条片201,而且通过连接层202a、202b连接在一起,因此能进一步提高发射电极侧的连接信赖度。
更进一步说明的话,因为连接层202a、202b是电流流动的部位,其材料用的是以金、银为主要成分的纳米尺寸的粒子和微米尺寸的粒子的混合材料的高导电率材料。
此金粒子和银粒子的混合材料的连接在80摄氏度左右的温度下能实现,但在80摄氏度左右的温度二者变成相互固溶的状态,与各个粒子单独存在的凝聚体不一样。
这时,金和银如上所述,形成全率固溶体,但通过使之含有纳米尺寸的粒子,在80摄氏度的低温下也能形成固溶体,连接在一起。
这里,在此实施形态中,连接层202a和连接层202b采用了以纳米尺寸和微米尺寸的金粒子和银粒子为主要成分的混合物,但此混合物并不限于金和银,从金、银、镍、铜、铝、锌、锡、铟、铋、锑中至少选择2种金属粒子的混合物,也可以实施。
已经说明了当连接层是以金属粒子为主要成分时,通过加热连接的例子,但从连接强度的观点来看,同时使用加热和加压进行连接是优选的。以下就连接时不加压和加压时连接部分的抗剪强度的不同进行说明。图7是表示连接层采用平均粒径为10nm的金粒子,没加压和加上2MPa的压力进行连接时的连接部分的抗剪强度。连接方法,除有无加压以外,采用和上述一样的方法。这里的抗剪强度是用剪切破坏试验机测定连接部分断裂时的最大载重。从图7可以明显看出同时采用加压时,比没加压时抗剪强度高几十倍。这时的连接部分剖面的SEM像用图8(a),(b)表示。图8(a)所示的没加压时的连接部分剖面,不是金属粒子相互完全地连接的构造,而是存在着许多的间隙。与此相对,图8所示的加压时的连接部分剖面,是金属粒子密集的构造。
下面,作为高温放置特性,测定与放在250摄氏度的加热环境下的放置时间相对应的抗剪强度。图9是表示对由金粒子的混合物构成的连接层(没加压和加压)、PbSn系钎焊的连接层、Ag膏剂的连接层分别测定的结果。由图9的结果可知,PbSn系钎焊的连接层、Ag膏剂的连接层,相对于初期强度,抗剪强度随着高温放置时间而下降。PbSn系钎焊材料,在放置500个小时后,抗剪强度几乎为0。另外,Ag膏剂,在放置168个小时后,抗剪强度几乎为0。与此相对,由金粒子的混合物构成的连接层,加压时和不加压时,相对于初期强度,在加热下超过600个小时后,抗剪强度的退化都很小。从这可以看出,金属粒子的混合物构成的连接层,高温放置特性是优良的。
但是,导体条片201如上所述,是用碳和铝的复合材料或者碳和铜的复合材料做成的。这样一来,此导体条片的201的热膨胀系数约为8~12ppm/℃。
一方面,功率半导体元件101通过锡系钎焊105连接在导体层102a上。这时,导体层102a和导体层102b为铜,陶瓷绝缘基板103为氮化硅系陶瓷,导体层102a的厚度为1.0mm,导体层102b的厚度为0.8mm,并且陶瓷绝缘基板103的厚度为0.32mm。这时,导体层102a和导体层102b以及由陶瓷绝缘基板103构成的绝缘布线基板的热膨胀系数约为10ppm/℃。
这样一来,此实施形态中,用热膨胀系数为10ppm/℃的绝缘布线基板和热膨胀系数为8~12ppm/℃的导体条片201这两个线膨胀率几乎相同的部件夹着功率半导体元件101,因此,尽管使用了连接用时剖面积比较大的导体条片201,但也能减小因高温环境下变得显著的各部件的膨胀差所引起的热应力。
理想的情况是,使导体条片201的热膨胀系数与绝缘布线基板的一致,这样连接层202b上产生的热应力会变得最小,最能提高长期信赖度,由上述实施形态可知,热膨胀系数为10ppm/℃和8~12ppm/℃,所以几乎已达到理想状态。
但是,上述绝缘布线基板的热膨胀系数,是用具体的数值计算的一个例子,由于绝缘基板所使用的材料和厚度的范围中存在对于热膨胀系数的最佳范围,所以可以任意选择。
这里,上述的说明,其前提是即使各部件发生热膨胀时,依然是平坦的,这时此实施形态中,因为连接用时采用导体条片201,所以热膨胀时也不会变为弓形,因此作为前提已说明的那样,能保持与功率半导体元件101的连接面的平坦。
下面就上述实施形态中的导体条片201和功率半导体元件101的连接部分的信赖度进行说明。上述实施形态采用的复合材料导体条片201,其热传导率约为300W/m℃(参考数值:铜的热传导率为380W/m℃、铝的热传导率为233W/m℃),很大,而且不是金属丝状,而是条片状(矩形)。
其结果是导体条片201的剖面积变得很大,在加上上述的高热传导率,从功率半导体元件101的热的转移变得很容易,因此,根据此实施形态,能提高功率半导体元件101的散热。
比如,逆变器装置使用的功率半导体器件,转换电流的功率半导体元件发热最多,是高温的部件,但是根据此实施形态,由于导体条片201会使散热性提高,所以能使功率半导体元件101的连接部分的温度比以前的引线键合的功率半导体元件装置的温度低。
这里的连接部分的温度下降,意味着这部分的热膨胀的下降。因此与将金属丝直接和功率半导体元件连接时相比,能提高长期的信赖度,所以根据此实施形态能提高长期信赖度。
另外,本发明的实施形态,如上所述,不是将功率半导体元件限定于IGBT和OSFET等,只要是主电流的输入和输出具有上下两个面的电极的半导体元件,同样是适用的。
另外,本发明的半导体器件,适用于各种功率变流器。通过将此半导体器件用于上述功率变流器,可以提供能搭载在高温环境的位置,而且即使没有专门的冷却器也能确保长期信赖度的功率变流器。
另外,逆变器和电动机能作为动力源,安装在电力车上。在此车中,由于能简化从动力源到车轮的驱动装置,所以和以前通过齿轮的压入比率的不同来变速的汽车相比,变速时的冲击减轻了,能顺利的移动,振动和噪音也比以前小了。
这里本发明的实施形态的功率半导体器件100如上所述,能用于混合动力汽车的电动机的控制转速用的逆变器,这时作为图6所示的3相逆变器,能从发动机驱动的发电机和蓄电池向混合动力汽车的交流电动机M提供可变电压可变频率的3相交流电。
另外,安装了本发明的实施形态的功率半导体器件100的逆变器装置也能用于冷暖气机,这时能比采用以前的交流电动机获得更高的功率。
因此,本发明的实施形态在减小使用冷暖气机时的功率消耗方面是有用的。另外,能使室内的温度从开始运转到达到设定温度时的时间比采用以前的交流电动机的时间短。
而且可以将本发明的实施形态的功率半导体器件100作为逆变器安装在搅拌液体或使液体流动的装置、像洗衣机、液体循环装置上,这时也能获得减少功率消耗的效果。
以上用实施形态就本发明进行了具体的说明,但是本发明并不限于这些实施形态,各实施形态的组合以及在不脱离其效果的范围内各种改变当然都是可能的。
Claims (6)
1.一种半导体器件,采用在半导体芯片的一个面和另一面分别引出主电流的输入输出电极的一个和另一个的半导体元件,通过将上述输入输出电极的一个连接在绝缘基板的导体层上,使上述绝缘基板支持上述半导体元件,其特征在于:
上述半导体芯片的输入输出电极的另一个与上述绝缘基板的导体层的连接,采用了由碳和铝或者碳和铜的复合材料构成的导体条片,且
上述导体条片与上述半导体芯片的输入输出电极的另一个以及上述导体条片与上述绝缘基板的导体层通过从金、银、镍、铜、铝、锌、锡、铟、铋、锑中选择的至少2种纳米尺寸和微米尺寸的金属粒子的混合物紧固地连接在一起。
2.如权利要求1所述的半导体器件,其特征在于:上述输入输出电极的一个与上述绝缘基板的导体层通过从金、银、镍、铜、铝、锌、锡、铟、铋、锑中选择的至少2种纳米尺寸和微米尺寸的全属粒子的混合物紧固地连接在一起。
3.如权利要求1或2所述的半导体器件,其特征在于:上述导体条片的连接面被金或银覆盖。
4.如权利要求1或2所述的半导体器件,其特征在于:上述输入输出电极的一个的连接面及上述绝缘基板的导体层的连接面被金或银覆盖。
5.一种功率变流器,其特征在于:内置有权利要求1至4中任意一项所述的半导体器件。
6.一种混合动力汽车,其特征在于:将权利要求5所述的功率变流器搭载在发动机室。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004221918A JP4378239B2 (ja) | 2004-07-29 | 2004-07-29 | 半導体装置及びそれを使用した電力変換装置並びにこの電力変換装置を用いたハイブリッド自動車。 |
JP2004221918 | 2004-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1728373A CN1728373A (zh) | 2006-02-01 |
CN100517676C true CN100517676C (zh) | 2009-07-22 |
Family
ID=35731197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100876844A Expired - Fee Related CN100517676C (zh) | 2004-07-29 | 2005-07-29 | 半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7528485B2 (zh) |
JP (1) | JP4378239B2 (zh) |
CN (1) | CN100517676C (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4539980B2 (ja) * | 2005-03-23 | 2010-09-08 | 富士電機システムズ株式会社 | 半導体装置およびその製造方法 |
DE102006017115B4 (de) * | 2006-04-10 | 2008-08-28 | Infineon Technologies Ag | Halbleiterbauteil mit einem Kunststoffgehäuse und Verfahren zu seiner Herstellung |
JP2007251076A (ja) * | 2006-03-20 | 2007-09-27 | Hitachi Ltd | パワー半導体モジュール |
DE102006043163B4 (de) * | 2006-09-14 | 2016-03-31 | Infineon Technologies Ag | Halbleiterschaltungsanordnungen |
JP2008153470A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
JP4872663B2 (ja) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP5151150B2 (ja) * | 2006-12-28 | 2013-02-27 | 株式会社日立製作所 | 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法 |
JP4895994B2 (ja) | 2006-12-28 | 2012-03-14 | 株式会社日立製作所 | 金属粒子を用いた接合方法及び接合材料 |
JP5023710B2 (ja) * | 2007-01-19 | 2012-09-12 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP5006081B2 (ja) * | 2007-03-28 | 2012-08-22 | 株式会社日立製作所 | 半導体装置、その製造方法、複合金属体及びその製造方法 |
DE102007031490B4 (de) * | 2007-07-06 | 2017-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls |
JP4468464B2 (ja) * | 2008-03-28 | 2010-05-26 | 株式会社東芝 | フレキシブルプリント配線板および電子機器 |
US8513534B2 (en) | 2008-03-31 | 2013-08-20 | Hitachi, Ltd. | Semiconductor device and bonding material |
US7682875B2 (en) * | 2008-05-28 | 2010-03-23 | Infineon Technologies Ag | Method for fabricating a module including a sintered joint |
US7786600B2 (en) * | 2008-06-30 | 2010-08-31 | Hynix Semiconductor Inc. | Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire |
JP2011253950A (ja) * | 2010-06-02 | 2011-12-15 | Mitsubishi Electric Corp | 電力半導体装置 |
JP2013016629A (ja) * | 2011-07-04 | 2013-01-24 | Mitsubishi Electric Corp | 半導体モジュール |
DE102011078806B4 (de) * | 2011-07-07 | 2014-10-30 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren für ein leistungselektronisches System mit einer Kühleinrichtung |
JP2012191238A (ja) * | 2012-06-15 | 2012-10-04 | Hitachi Ltd | 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法 |
EP2903027B1 (de) * | 2014-01-30 | 2018-08-22 | AZUR SPACE Solar Power GmbH | LED-Halbleiterbauelement |
JP2018056356A (ja) * | 2016-09-29 | 2018-04-05 | 株式会社東芝 | 半導体装置 |
JP6907546B2 (ja) * | 2017-01-17 | 2021-07-21 | 三菱マテリアル株式会社 | パワーモジュール |
JP6470328B2 (ja) * | 2017-02-09 | 2019-02-13 | 株式会社東芝 | 半導体モジュール |
JP2018195724A (ja) * | 2017-05-18 | 2018-12-06 | 三菱電機株式会社 | パワーモジュールおよびその製造方法ならびに電力変換装置 |
JP6881238B2 (ja) * | 2017-10-31 | 2021-06-02 | 三菱電機株式会社 | 半導体モジュール、その製造方法及び電力変換装置 |
CN111819684A (zh) | 2018-03-23 | 2020-10-23 | 三菱综合材料株式会社 | 电子组件安装模块 |
JP7404208B2 (ja) * | 2020-09-24 | 2023-12-25 | 株式会社東芝 | 半導体装置 |
CN114018184A (zh) * | 2021-10-26 | 2022-02-08 | 珠海格力电器股份有限公司 | 陶瓷片碎裂检测系统、方法、装置及相关设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1103734A (zh) * | 1993-08-03 | 1995-06-14 | 国际商业机器公司 | 带有电路化表面保护涂层的芯片载体 |
CN1224326A (zh) * | 1997-07-17 | 1999-07-28 | 阿尔卑斯电气株式会社 | 导电性构成物及使用这种导电性构成物的电子器械 |
CN1340584A (zh) * | 2000-08-31 | 2002-03-20 | 松下电器产业株式会社 | 导电性粘结剂及使用该粘结剂的组装结构体 |
CN1402342A (zh) * | 2002-05-16 | 2003-03-12 | 株式会社日立制作所 | 复合材料及其应用 |
DE10301091A1 (de) * | 2003-01-14 | 2004-07-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement, Multichip-Anordnung und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtung |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0366082B1 (en) * | 1988-10-28 | 1996-04-10 | Sumitomo Electric Industries, Ltd. | Member for carrying semiconductor device |
JP2000183249A (ja) | 1998-12-11 | 2000-06-30 | Mitsubishi Electric Corp | パワー半導体モジュール |
US6853074B2 (en) * | 1999-12-27 | 2005-02-08 | Matsushita Electric Industrial Co., Ltd. | Electronic part, an electronic part mounting element and a process for manufacturing such the articles |
FR2811475B1 (fr) * | 2000-07-07 | 2002-08-23 | Alstom | Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu |
JP3942816B2 (ja) | 2000-10-25 | 2007-07-11 | ハリマ化成株式会社 | 金属間のロウ付け接合方法 |
US20040217472A1 (en) * | 2001-02-16 | 2004-11-04 | Integral Technologies, Inc. | Low cost chip carrier with integrated antenna, heat sink, or EMI shielding functions manufactured from conductive loaded resin-based materials |
JP4255652B2 (ja) | 2002-06-21 | 2009-04-15 | 株式会社オクテック | 固体接合方法 |
JP2004130371A (ja) | 2002-10-11 | 2004-04-30 | Ebara Corp | 接合体 |
JP2004128357A (ja) | 2002-10-04 | 2004-04-22 | Ebara Corp | 電極配設基体及びその電極接合方法 |
JP2004146695A (ja) | 2002-10-25 | 2004-05-20 | Ebara Corp | 金属化装置 |
JP2004107728A (ja) | 2002-09-18 | 2004-04-08 | Ebara Corp | 接合材料及び接合方法 |
JP4412072B2 (ja) | 2003-10-09 | 2010-02-10 | 株式会社日立製作所 | 電子部品の実装方法,半導体モジュール及び半導体装置 |
-
2004
- 2004-07-29 JP JP2004221918A patent/JP4378239B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-29 US US11/191,942 patent/US7528485B2/en not_active Expired - Fee Related
- 2005-07-29 CN CNB2005100876844A patent/CN100517676C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1103734A (zh) * | 1993-08-03 | 1995-06-14 | 国际商业机器公司 | 带有电路化表面保护涂层的芯片载体 |
CN1224326A (zh) * | 1997-07-17 | 1999-07-28 | 阿尔卑斯电气株式会社 | 导电性构成物及使用这种导电性构成物的电子器械 |
CN1340584A (zh) * | 2000-08-31 | 2002-03-20 | 松下电器产业株式会社 | 导电性粘结剂及使用该粘结剂的组装结构体 |
CN1402342A (zh) * | 2002-05-16 | 2003-03-12 | 株式会社日立制作所 | 复合材料及其应用 |
DE10301091A1 (de) * | 2003-01-14 | 2004-07-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement, Multichip-Anordnung und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtung |
Also Published As
Publication number | Publication date |
---|---|
US20060022326A1 (en) | 2006-02-02 |
JP2006041362A (ja) | 2006-02-09 |
CN1728373A (zh) | 2006-02-01 |
JP4378239B2 (ja) | 2009-12-02 |
US7528485B2 (en) | 2009-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100517676C (zh) | 半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车 | |
US7487581B2 (en) | Method of manufacturing an inverter device | |
CN104170086B (zh) | 半导体装置及半导体装置的制造方法 | |
EP1768243B1 (en) | Inverter device | |
US20210057372A1 (en) | Double-sided cooling type power module and manufacturing method therefor | |
CN109727960B (zh) | 半导体模块、其制造方法以及电力变换装置 | |
US11183457B2 (en) | Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter | |
US20020180037A1 (en) | Semiconductor device | |
JP2009536458A (ja) | 半導体モジュール及びその製造方法 | |
JP7026451B2 (ja) | パワー半導体モジュール及びその製造方法並びに電力変換装置 | |
JP2021068803A (ja) | 半導体モジュール及び電力変換装置 | |
JP3641232B2 (ja) | インバータ装置及びその製造方法 | |
CN205657051U (zh) | 一种半桥结构的全SiC功率半导体模块 | |
CN110797318A (zh) | 一种双面热管冷却的igbt封装结构 | |
CN102130020A (zh) | 一种碳化硅功率器件的封装方法 | |
JP6945418B2 (ja) | 半導体装置および半導体装置の製造方法 | |
CN101937909B (zh) | 电模块 | |
JPH11121668A (ja) | 液冷平形半導体装置 | |
CN114586151A (zh) | 半导体装置、功率转换装置以及半导体装置的制造方法 | |
JP3974747B2 (ja) | パワー回路 | |
CN203722569U (zh) | 用于连接晶体硅光伏发电组件的光伏接线盒 | |
CN113097155A (zh) | 一种芯片导热模块及其制备方法 | |
CN105762121A (zh) | 一种半桥结构的全SiC功率半导体模块 | |
JP2000091650A (ja) | 高温度熱電変換素子 | |
CN214797383U (zh) | 双面水冷式功率模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20150729 |
|
EXPY | Termination of patent right or utility model |