CN202633309U - 一种针对电动汽车应用的igbt功率模块 - Google Patents
一种针对电动汽车应用的igbt功率模块 Download PDFInfo
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- CN202633309U CN202633309U CN2012202616796U CN201220261679U CN202633309U CN 202633309 U CN202633309 U CN 202633309U CN 2012202616796 U CN2012202616796 U CN 2012202616796U CN 201220261679 U CN201220261679 U CN 201220261679U CN 202633309 U CN202633309 U CN 202633309U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Abstract
本实用新型公开了一种针对电动汽车应用的IGBT功率模块,它包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器,其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层,在金属层表面或镀有镍材料;所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上;功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。本实用新型适合应用于电动汽车的电机控制器。
Description
技术领域
本实用新型涉及应用于电动汽车动力电机控制器的IGBT模块,该模块主要功能是对驱动电机的电流和电压的幅值、相位和频率进行控制,以实现对车辆机动性能的准确控制。
背景技术
目前因为能源短缺的影响,节能环保型的电动汽车和混合动力汽车成为汽车行业发展的趋势。电动汽车的核心部件是电池、电机和电控装置,而IGBT模块则是电控装置的核心部件,起着将电池中存储的电压恒定的直流电转变为幅值、相位和频率可调的交流电的作用,在整个电能的转化利用过程中担负着极其重要的作用。
对应用于电动汽车电控装置的IGBT模块的主要要求有:1)高效率:电池的储能有限,需要提供能源的利用效率以提高电动汽车的续驶里程;2)高可靠性:该模块工作在高电压、大电流、高温、震动和工况复杂的环境,对模块的抗功率循环、温度循环和震动有较高要求,需要满足汽车寿命的要求;3)功率密度高、体积小:汽车应用要求功能部件的结构紧凑、体积小、有最大的功率输出能力;针对以上电动汽车行业的要求,目前业界在积极探索适用于电动汽车行业应用的IGBT模块。现有开发的IGBT模块主要针对工业级应用,如:变频器、逆变焊机和感应加热等,这些应用场合对模块的功率密度、可靠性要求没有电动汽车高,同时工况和抗震动特性也是电动汽车特有的要求,为此需要开发针对电动汽车的IGBT模块。
实用新型内容:
本实用新型的目的是设计出一种针对电动汽车应用的IGBT功率模块。
本实用新型要解决的是现有IGBT模块功率密度低、可靠性差,抗震动性弱等的问题。
本实用新型的技术方案是:它包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器,其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层,在金属层表面或镀有镍材料;所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上;功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。
本实用新型具有高功率密度高、高可靠性、高散热效率的优点。适合应用于电动汽车的电机控制器。
附图说明
图1为本实用新型IGBT模块的结构示意图。
图2为本实用新型IGBT模块内部连接结构局部放大示意图。
具体实施方式
下面结合附图及具体实施例对本实用新型作进一步的说明。
如图所示,本实用新型包括IGBT芯片1、二极管芯片2、绝缘陶瓷基板3、功率端子5、信号端子6、塑料外壳7和液冷散热器4。绝缘陶瓷基板3两侧的金属层为铜质材料层或铝质材料层,在金属层表面或镀有镍材料。所述的IGBT芯片1、二极管芯片2采用银浆烧结(silver sintering technology)焊接于绝缘陶瓷基板3上,银具有熔点为961度,以大幅度提高焊接的抗疲劳强度。功率端子5和信号端子6通过超声焊接在绝缘陶瓷基板3的金属层上。
绝缘陶瓷基板3通过软钎焊料焊接到液冷散热器4上,该焊料采用SnAgCu或SnAg焊料,以符合无铅要求,同时具有较高的抗疲劳强度。绝缘陶瓷基板3下有优化设计的水道,通过这种结构可以避免传统模块的基板及涂覆导热硅脂,可以提高散热效率,减小装置体积和重量。
本实用新型的功率端子5和信号端子6通过注塑的方式嵌入注塑在塑料外壳7中,以提高模块和外部接触的抗冲击和震动能力。功率端子5和信号端子6下端部为裸铜,通过超声焊接焊接到绝缘陶瓷基板3上,通过超声焊接可以实现铜和铜的结合,结合强度远远高于传统的软钎焊连接。
功率端子5安装孔下方嵌入有安装螺丝,通过塑料外壳7予以固定,塑料外壳7通过底部的螺丝与液冷散热器4固定在一起。通过这种方式可以提高模块的抗机械冲击效果。
采用铜线键合技术,利用铜线8来实现芯片之间、芯片与绝缘陶瓷基板3之间和绝缘陶瓷基板之间的电气连接。
Claims (4)
1.一种针对电动汽车应用的IGBT功率模块,包括IGBT芯片、二极管芯片、绝缘陶瓷基板、功率端子、信号端子塑料外壳和液冷散热器,其特征在于绝缘陶瓷基板两侧的金属层为铜质材料层或铝质材料层,在金属层表面或镀有镍材料;所述的IGBT芯片、二极管芯片采用银浆烧结焊接于绝缘陶瓷基板上;功率端子和信号端子通过超声焊接在绝缘陶瓷基板的金属层上。
2.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块,其特征在于功率端子和信号端子通过注塑的方式嵌入到塑料外壳中。
3.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块,其特征在于绝缘陶瓷基板通过软钎焊料焊接到液冷散热器上。
4.根据权利要求1所述的一种针对电动汽车应用的IGBT功率模块,其特征在于绝缘陶瓷基板中的陶瓷采为Si3N4或AlN或HPS材料。
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CN103260384A (zh) * | 2013-04-25 | 2013-08-21 | 奇瑞汽车股份有限公司 | 一种电机控制器冷却结构 |
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CN103260384A (zh) * | 2013-04-25 | 2013-08-21 | 奇瑞汽车股份有限公司 | 一种电机控制器冷却结构 |
CN103260384B (zh) * | 2013-04-25 | 2015-10-28 | 奇瑞新能源汽车技术有限公司 | 一种电机控制器冷却结构 |
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Effective date of registration: 20171227 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Sidalu in Nanhu District of Jiaxing city in Zhejiang province 314000 No. 18 (Jiaxing Semiconductor Co.) Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |
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