CN201773840U - 无邦定线的igbt功率模块 - Google Patents

无邦定线的igbt功率模块 Download PDF

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CN201773840U
CN201773840U CN201020236753XU CN201020236753U CN201773840U CN 201773840 U CN201773840 U CN 201773840U CN 201020236753X U CN201020236753X U CN 201020236753XU CN 201020236753 U CN201020236753 U CN 201020236753U CN 201773840 U CN201773840 U CN 201773840U
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igbt
copper
diode
electrode
base plate
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李伟
何文牧
沈征
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ZHEJIANG HUAXIN TECHNOLOGY Co Ltd
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Abstract

本实用新型提供一种完全避免使用邦定线互联的IGBT功率模块，从而达到减小线路互联寄生阻抗，机械热疲劳失效及热阻的效益，它包括铜合金底板、焊接于铜合金底板上的陶瓷覆铜基板、设置于陶瓷覆铜基板上的IGBT芯片和二极管芯片以及设置于铜合金底板上的外壳，IGBT和二极管之间通过刻蚀于陶瓷覆铜基板上的铜引线电连接，IGBT和二极管底面上的电极倒扣焊接于铜引线上；IGBT和二极管顶面上的电极通过金属互联片与陶瓷覆铜基板上的铜引线电连接。本实用新型有益效果在于：通过金属互联片连接各IGBT和二极管的顶面电极和陶瓷覆铜基板，减小IGBT模块互联寄生阻抗，并且能从金属互联片的上表面传走一部分热量从而降低了模块热阻，提高了模块的可靠性。

Description

无邦定线的IGBT功率模块
技术领域
本实用新型涉及电力半导体器件封装技术领域，尤其是无邦定线的IGBT功率模块。
背景技术
IGBT(绝缘栅双极型晶体管)是国际上公认的电力电子技术第三次革命的最具代表性的产品，是目前电力电子技术领域中最具有优势的功率器件之一。IGBT是一种具有MOS输入、双极输出功能的MOS、双极相结合的器件。结构上，它是由成千上万个重复单元(即元胞)组成，是一种采用大规模集成电路技术和功率器件技术制造的一种大功率集成器件。IGBT广泛应用于电机节能、冶金、新能源、输变电、汽车电子、轨道交通，家用电器等国民经济各领域，是中国建设资源节约型和环境友好型社会不可缺少的关键技术之一。IGBT在上世纪80年代初研制成功，其性能经过二十几年的不断提高和改进，已成熟地应用于中高频大功率领域。它将MOSFET的电压控制、控制功率小、易于并联、开关速度高的特点和双极晶体管的电流密度大、电流处理能力强、饱和压降低的特点集中于一身，表现出易驱动、低通态压降、较快开关速度、高耐压、大电流、高频率等优越的综合性能。IGBT器件目前的电压范围已经扩到300至6500伏，电流范围已经扩到几安培至几百安培，频率范围已经扩到几百赫兹至几十千赫。IGBT芯片根据电流应用范围采用混合封装技术为基础的多芯片功率模块或传统的分立功率器件封装形式。
目前，公知的IGBT多芯片功率模块主要基于陶瓷覆铜基板和铝邦定线技术。IGBT及二极管多个芯片的背面焊接在陶瓷覆铜基板上，各芯片正面的电极则通过铝邦定线实现电路互联。但是，这种技术存在有铝邦定线引发的大寄生阻抗及机械热疲劳失效等主要缺点。而且各芯片中产生的热量只能通过芯片背面散发，造成较大的热阻。
实用新型内容
本实用新型针对现有技术存在的问题，其目的在于提供一种完全避免使用邦定线互联的IGBT功率模块，从而达到减小线路互联寄生阻抗，机械热疲劳失效及热阻的效益。为实现上述目的，本实用新型采用如下解决方案：
无邦定线的IGBT功率模块，包括铜合金底板、焊接于铜合金底板上的陶瓷覆铜基板、设置于陶瓷覆铜基板上的IGBT芯片和二极管芯片以及设置于铜合金底板上的外壳，IGBT和二极管之间通过刻蚀于陶瓷覆铜基板上的铜引线电连接，所述IGBT和二极管底面上的电极倒扣焊接于铜引线上；IGBT和二极管顶面上的电极通过金属互联片与陶瓷覆铜基板上的铜引线电连接。
所述金属互联片包括一体成形的上焊接片、下焊接片及连接片，下焊接片与位于IGBT或二极管外侧陶瓷覆铜基板上的铜引线焊接，上连接片将IGBT或二极管顶面整体覆盖并与IGBT或二极管顶面上的电极焊接。金属互联片也包括一体成形的双下焊接片及连接片，用于陶瓷覆铜基板上的铜引线布局布线的搭桥互联。
还设有桥接金属片，所述桥接金属片包括用于将铜引线搭桥互联的两个铜引线焊接片及用于连接两铜引线焊接片的第二连接片，铜引线焊接片与第二连接片一体成形，两个铜引线焊接片分别与陶瓷覆铜基板上的铜引线焊接。
所述IGBT和二极管底面上的电极可以通过倒扣焊球、铜焊柱或金焊台与陶瓷覆铜基板上的铜引线焊接。
本实用新型与现有IGBT功率模块相比，有益效果在于：通过金属互联片连接各IGBT和二极管的顶面电极和陶瓷覆铜基板，除了实现各器件与陶瓷覆铜基板之间的互联，还可以实现陶瓷覆铜基板上铜引线的搭桥互联，所用金属互联片与铝邦定互联线相比，减小IGBT模块互联寄生阻抗，并且能从金属互联片的上表面传走一部分热量从而降低了模块热阻，提高了模块的可靠性。
附图说明
图1为本实用新型的内部结构示意图；
图2为IGBT及二极管与陶瓷覆铜基板装配结构示意图。
具体实施方式
下面结合附图和具体实施方式对本实用新型做进一步详细描述：
参照图1和图2，无邦定线的IGBT功率模块，包括铜合金底板4、焊接于铜合金底板4上的陶瓷覆铜基板3、设置于陶瓷覆铜基板上的IGBT芯片1和二极管芯片2以及扣合于铜合金底板上的外壳10，IGBT芯片1和二极管芯片2之间通过刻蚀于陶瓷覆铜基板上的铜引线11电连接，IGBT1和二极管2底面上的电极倒扣焊接于铜引线11上；IGBT1和二极管2顶面上的电极通过金属互联片5与铜引线11电连接。本实用新型采用倒扣封装方式，IGBT顶面电极为集电极，底面电极为发射极和栅极；二极管顶面电极为阴极，底面电极为阳极。IGBT和二极管底面上的电极可以通过倒扣焊球、铜焊柱或金焊台与铜引线焊接，本实施例中采用的倒扣焊球12。
金属互联片5包括一体成形的上焊接片51、下焊接片52及连接片53，下焊接片52与位于IGBT或二极管外侧陶瓷覆铜基板3上的铜引线11焊接，上连接片51将IGBT芯片1或二极管芯片2顶面整体覆盖并与IGBT1或二极管2顶面上的电极焊接。
参照图2还设有桥接金属片13，桥接金属片13包括用于将铜引线搭桥互联的两个铜引线焊接片(131、132)及用于连接两铜引线焊接片的第二连接片133，铜引线焊接片(131、132)与第二连接片133一体成形，两个铜引线焊接片(131、132)分别与陶瓷覆铜基板上的铜引线11焊接。
金属互联片5连接各IGBT和二极管的顶面电极和陶瓷覆铜基板，实现各器件与陶瓷覆铜基板之间的互联，桥接金属片13实现陶瓷覆铜基板上铜引线的搭桥互联，采用金属互联片及桥接金属片与铝邦定互联线相比，减小IGBT模块互联寄生阻抗，并且能从金属互联片的上表面传走一部分热量从而降低了模块热阻，提高了模块的可靠性。
虽然本实用新型已通过参考优选的实施例进行了图示和描述，但是，本领域普通技术人员应当了解，可以不限于上述实施例的描述，在权利要求书的范围内，可作形式和细节上的各种变化。

Claims (6)

1.无邦定线的IGBT功率模块，包括铜合金底板、焊接于铜合金底板上的陶瓷覆铜基板、设置于陶瓷覆铜基板上的IGBT芯片和二极管芯片以及设置于铜合金底板上的外壳，IGBT和二极管之间通过刻蚀于陶瓷覆铜基板上的铜引线电连接，其特征在于：所述IGBT和二极管底面上的电极倒扣焊接于铜引线上；IGBT和二极管顶面上的电极通过金属互联片与铜引线电连接。
2.根据权利要求1所述的无邦定线的IGBT功率模块，其特征在于：所述金属互联片包括一体成形的上焊接片、下焊接片及连接片，下焊接片与位于IGBT或二极管外侧的铜引线焊接，上连接片将IGBT或二极管顶面整体覆盖并与IGBT或二极管顶面上的电极焊接。
3.根据权利要求1或2所述的无邦定线的IGBT功率模块，其特征在于：所述IGBT和二极管底面上的电极通过倒扣焊球与铜引线焊接。
4.根据权利要求1或2所述的无邦定线的IGBT功率模块，其特征在于：所述IGBT和二极管底面上的电极通过铜焊柱与铜引线焊接。
5.根据权利要求1或2所述的无邦定线的IGBT功率模块，其特征在于：所述IGBT和二极管底面上的电极通过金焊台与铜引线焊接。
6.根据权利要求1所述的无邦定线的IGBT功率模块，其特征在于：还设有桥接金属片，所述桥接金属片包括用于将铜引线搭桥互联的两个铜引线焊接片及用于连接两铜引线焊接片的第二连接片，铜引线焊接片与第二连接片一体成形，两个铜引线焊接片分别与陶瓷覆铜基板上的铜引线焊接。
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