CN105140201A - 一种具有万用型封装金属片的半导体封装件及打线工艺 - Google Patents

一种具有万用型封装金属片的半导体封装件及打线工艺 Download PDF

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CN105140201A
CN105140201A CN201510373093.7A CN201510373093A CN105140201A CN 105140201 A CN105140201 A CN 105140201A CN 201510373093 A CN201510373093 A CN 201510373093A CN 105140201 A CN105140201 A CN 105140201A
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CN105140201B (zh
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石磊
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Nantong Fujitsu Microelectronics Co Ltd
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Abstract

本发明提供了一种具有万用型封装金属片的半导体封装件，所述万用型封装金属片一端与芯片漏极、源极的焊接，另一端与封装外引脚焊接；其特征在于：所述万用型封装金属片为铜片、铜铝合金片、铜钨合金片中的一种，且覆盖半导体的漏极、源极、栅极。其打线工艺包括以下步骤：1)引线与栅极的引脚焊盘对准，在引线端头形成球体；2)将球体与栅极的引脚焊盘接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；3)引导劈刀向上移动，带动引线移向芯片上的栅极，形成线弧；4)劈刀带动引线与芯片栅极的焊盘接触，通过键合形成第二焊点；5)折断引线，劈刀离开第二焊点；6)通过万用型封装金属片将芯片的漏极、源极与封装外引脚焊接起来。

Description

一种具有万用型封装金属片的半导体封装件及打线工艺
技术领域
本发明涉及半导体封装领域，尤其涉及一种具有万用型封装金属片的半导体封装件及打线工艺。
背景技术
半导体封装工艺中，用导线将半导体芯片上的电极与外部引脚焊接起来，即完成芯片与封装外引脚间的电路通路。电晶体这类半导体，具有三个极：漏极(drain)、源极(source)、栅极(gate)。它们与封装外引脚都是通过金属导线连接的。金属导线连接方式共有三种：1是丝线键合，即wirebond，所用的多为Au、Cu、Al线；2是金属锻带，如Al带；3是金属片焊接，即Clipbond，如采用Cu片焊接等。栅极(gate)是采用丝线焊接的，漏极(drain)、源极(source)可以采用上述三种连接方式。附图1为wirebond焊接方式结构示意图，图1所示，1-1为连接漏极(drain)、源极(source)的丝线，1-2为连接栅极(gate)的丝线；1-4为栅极。附图2为金属片为Clipbond的连接方式结构示意图，图中2-1为连接漏极(drain)、源极(source)的铜片clip，2-4为栅极，2-3为封装外引脚，2-2为连接栅极(gate)和封装外引脚的丝线。上述三种方法中普遍采用丝线焊接，这种方法因性能稳定、效率高而被广泛应用，但缺点是不能适用大电流大功率的封装；应用最少的是采用金属片封装金属片进行焊接，因为在现有技术中每种Clip只能适用于一种芯片，即每个芯片的设计不同，所适用的Clip形状也会不同，制备Clip的模具也不同，这样，每一种芯片设计就需要设计一套模具，无形中增大了芯片封装的成本，因而Clipbond在实际应用中很少。所以，如何解决现有封装金属片应用的局限性是一个待解决的就是问题。
中国专利201210243588.4公开了一种半导体打线接合结构及方法，该打线接合结构包括一半导体元件及一焊线，该半导体元件的焊垫具有一中心凹部及一环状突部，该焊线具有一连接部，接合于该中心凹部，但该打线方法不适用于具有封装金属片的芯片的封装。中国专利200710128216.6公开了一种具铜线的半导体封装件及其打线方法，半导体封装件包括:具有多个焊结点的承载件,以及接置于承载件上的芯片,且于芯片上形成有多个焊垫,复于承载件的焊结点上植设凸块,并且利用多条铜线,用以分别端接承载件上的凸块及芯片上的焊垫,从而通过铜线电性连接芯片与承载件,接着,于承载件上形成封装胶体,以包覆芯片、铜线及凸块。该技术方案不能满足大功率封装芯片的工艺要求，也不适用于具有封装金属片的芯片封装。
上述现有技术虽然都涉及半导体封装件及打线工艺，但未解决现有技术中封装金属片应用局限性的问题。
发明内容
为克服现有封装技术中存在的封装金属片金属片不能广泛适用的问题，本发明提供了一种具有万用型封装金属片的半导体封装件，同时也提供了这种半导体封装件的打线工艺。
本发明的技术方案是：一种具有万用型封装金属片的半导体封装件，所述半导体封装件从下至上包括集成电路层、硅层、铝层、万用型封装金属片，所述集成电路层与所述硅层之间通过焊料层连接；所述铝层与所述硅层邻接；所述万用型封装金属片与所述铝层之间通过焊料层连接；所述万用型封装金属片一端与芯片漏极、源极的焊盘焊接，另一端与封装外引脚焊盘焊接；其特征在于：所述万用型封装金属片为铜片、铜铝合金片、铜钨合金片中的一种，且覆盖半导体的漏极、源极、栅极。
进一步，所述万用型封装金属片的厚度为25-1000μm。
所述栅极与封装外引脚采用丝线键合的方式连接，所述万用型封装金属片不与栅极的封装外引脚焊接。
所述万用型封装金属片不覆盖栅极的封装外引脚。
进一步，作为本发明一种可选的实施方式，所述万用型封装金属片与封装外引脚焊盘连接的一端弯曲，所述弯曲为弧度或者折角，所述弧度大于π/2，所述折角大于90度。
作为本发明一种可选的实施方式，所述万用型封装金属片为一铜片，封装外的一端与支脚焊接起来，所述支脚再与封装外引脚焊接。
进一步，与所述万用型封装金属片焊接的支脚为“Z”型。
进一步，所述栅极与封装外引脚丝线键合的方式为反向打线，即封装外引脚的焊盘作为第一焊点开始打线，线弧至栅极而止，栅极作为第二焊点。
进一步，所述万用型封装金属片的底部与栅极对应的投影区涂覆有高介电材料层，所述高介电材料层的介电常数大于3.0。
进一步，所述高介电材料层为电阻油墨或高介电薄膜。
本发明还公开了一种具有万用型封装金属片的半导体封装件的打线工艺，包括以下步骤：
1)引线与栅极的引脚焊盘对准，在引线端头形成球体；
2)将球体与栅极的引脚焊盘接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
3)引导劈刀向上移动，带动引线移向芯片上的栅极，形成线弧；
4)劈刀带动引线与芯片栅极的焊盘接触，通过键合形成第二焊点；
5)折断引线，劈刀离开第二焊点；
6)通过万用型封装金属片将芯片的漏极、源极与封装外引脚焊接起来。
上述具有万用型封装金属片的半导体封装件的打线工艺中，所述引线为直径小于75μm金丝，所述引线端头的球体直径为引线4-5直径的2-3倍；所述键合方式可以为热超声波键合，所述键合温度为190-240℃，键合时间为5-20ms；所述键合方式也可以为热压键合，所述键合温度为280-380℃，键合时间为1s。
进一步，所述线弧最高处到芯片上焊盘的垂直高度小于60μm；
所述线弧最高点到封装金属片底部的距离大于30μm。
作为本发明的一种优选的实施方式，一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于，包括以下步骤：
1)引线对准芯片栅极的焊盘，在引线端头形成球体并与芯片栅极键合，折断引线；
2)引线与栅极的引脚焊盘对准，在引线端头形成球体；
3)将球体与栅极的引脚焊盘接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
4)引导劈刀向上移动，带动引线移向芯片的栅极，形成线弧；
5)劈刀带动引线与芯片栅极的焊盘球体接触，通过键合形成第二焊点；
6)折断引线，劈刀离开第二焊点；
7)通过万用型封装金属片将芯片的漏极、源极与封装外引脚焊接起来。
与现有技术相比，本发明的有益效果是：本发明提供具有万用型封装金属片的半导体封装件可实现大功率大电流，可用于任何形状的芯片设计，工艺简单，成本低。
附图说明
图1是现有技术的丝线键合封装件的结构示意图；
图2是现有技术的封装金属片焊接的封装件的结构示意图；
图3是本发明的万用型封装金属片封装结构示意图；
图4是本发明的万用型封装金属片封装结构的剖面图；
图5是引线键合工艺中正向打线的结构示意图；
图6是引线键合工艺中反向打线的结构示意图；
图7是万用型封装金属片的弧度支脚结构示意图；
图8是万用型封装金属片的折角支脚结构示意图；
图9是具有“Z”型支脚的万用型封装金属片封装件结构剖面图；
图1中标记说明：丝线1-1，丝线1-2，引脚1-3，栅极1-4；
图2中标记说明：封装金属片2-1，丝线2-2，引脚2-3，栅极2-4；
图3中标记说明：万用型封装金属片3-1，引脚3-3；
图4中标记说明：万用型封装金属片4-1，丝线键接引脚4-3，栅极4-4，丝线4-5，高介电材料层4-6，集成电路层(DiePad)4-7，硅层(Si)4-8，铝层(Al)4-9，焊料层(solder)4-10；
图9中标记说明：万用型封装金属片5-1，丝线键接引脚5-3，栅极5-4，丝线5-5，高介电材料层5-6，集成电路层(DiePad)5-7，硅层(Si)5-8，铝层(Al)5-9，焊料层(solder)5-10。
具体实施方式
以下结合附图和实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
实施例1
现有技术中封装金属片的形状多是根据芯片的设计而定的，所以，每一种芯片设计对应于一种封装金属片，而每一种封装金属片的设计都需要一套模具，模具的制造成本又很高，而每个客户提供的芯片设计又不尽相同，这样，采用封装金属片焊接无形中就增加了封装成本。本发明即是基于上述问题的基础上，设计了一种万用型的封装金属片，可以适用于所有芯片的封装。
如图3所示，本发明设计的具有万用型封装金属片的半导体封装件，其中，万用型封装金属片3-1为金属片，金属片一端向下弯曲且与引脚焊盘焊接，金属片的另一端与芯片焊盘焊接，万用型封装金属片3-1可以覆盖芯片的整个封装区域，也可以部分覆盖芯片的部分封装区域，但覆盖半导体的漏极(drain)、源极(source)、栅极(gate)。
如图4所示，具有万用型封装金属片的半导体封装件，从下至上包括集成电路层4-7、硅层4-8、铝层4-9、万用型封装金属片4-1，集成电路层4-7与硅层4-8之间通过焊料层4-10连接；铝层4-9与硅层4-8邻接；万用型封装金属片4-1与铝层4-9之间通过焊料层连接。万用型封装金属片4-1一端与芯片漏极、源极的焊盘焊接，另一端与封装外引脚焊盘焊接，万用型封装金属片4-1为铜片、铜铝合金片、铜钨合金片中的一种，覆盖电晶体的漏极、源极、栅极。
万用型封装金属片4-1的厚度为25-1000μm。
栅极4-4与栅极4-4的丝线键接引脚4-3采用丝线键合的方式连接，万用型封装金属片4-1不与漏极、源极的封装外引脚焊接。
万用型封装金属片4-1不覆盖栅极4-4的丝线键接引脚4-3。
万用型封装金属片4-1与封装外漏极、源极引脚连接的一端弯曲，弯曲形状可以为弧度，且弧度大于π/2；弯曲形状也可以为折角，且折角大于90度。
实施例2
如图9所示，具有万用型封装金属片的半导体封装件，从下至上包括集成电路层5-7、硅层5-8、铝层5-9、万用型封装金属片5-1，集成电路层5-7与硅层5-8之间通过焊料层5-10连接；铝层5-9与硅层5-8邻接；万用型封装金属片5-1与铝层5-9之间通过焊料层连接。万用型封装金属片5-1一端与芯片漏极、源极的焊盘焊接，另一端与封装外引脚焊盘焊接，万用型封装金属片5-1为铜片、铜铝合金片、铜钨合金片中的一种，覆盖电晶体的漏极、源极、栅极。
与实施例1的不同之处在于，万用型封装金属片5-1为一铜片，其中与漏极、源极的引脚连接的一端通过与支脚焊接起来，支脚为“Z”型，再与封装外漏极、源极的引脚焊接。
实施例3
现有技术中采用封装金属片焊接封装的半导体，只覆盖半导体芯片的漏极(drain)和源极(source)，而栅极(gate)是露于封装金属片之外的(如图2所示)，所以，栅极(gate)和封装外引脚之间是采用丝线键合的，丝线键合的方式有正向打线和反向打线。正向打线是从芯片引线到封装外引脚，而反向打线是则从封装外引脚引线到芯片。正向打线弧度较高，而反向打线引线弧度较低。
对于本发明提供的万用型封装金属片焊接封装的半导体(图3所示)，栅极(gate)和封装外引脚之间如果采用正向打线，线弧高度的最高处与万用型封装金属片底部的距离就会很小，虽然线弧与万用型封装金属片之间填充有环氧树脂塑封，但依然存在可能击穿的风险。为了增大线弧与万用型封装金属片之间的介电常数，在本发明的技术方案中，是从材料和线弧与万用型封装金属片之间的距离两方面着手的。所以，本发明的一种方案是采用反向打线的方式；另一种方案是在万用型封装金属片的底部涂覆有高介电材料层(图4中4-5所示)，高介电材料层的介电常数大于3.0，涂覆的高介电材料层为电阻油墨或高介电薄膜，涂覆的区域可以为整个万用型封装金属片的底部，也可以在封装金属片的底部与栅极对应的投影区域涂覆高介电材料层。作为最优选的方案是，采用反向打线和在万用型封装金属片的底部涂覆有高介电材料同时进行。
实施例4
如图4所示的万用型封装金属片的半导体封装件的打线工艺，包括以下步骤：
1)引线4-5与栅极4-4的引脚焊盘对准，在引线端头形成球体；
2)将球体与栅极4-4的丝线键接引脚焊盘4-3接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
3)引导劈刀向上移动，带动引线移向芯片上的栅极4-4，形成线弧；
4)劈刀带动引线4-5与芯片栅极4-4接触，通过键合形成第二焊点；
5)折断引线，劈刀离开第二焊点；
6)通过万用型封装金属片4-1将芯片的漏极、源极，与漏极、源极的封装外引脚焊接起来。
在本实施例中的万用型封装金属片的半导体封装件的打线工艺中，引线4-5的直径不超过焊盘尺寸的1/4，引线4-5优选采用小于75μm金丝，比如25μm、30μ、45μm等，引线端头的球体直径为引线4-5直径的2-3倍，但键合头尺寸不超过焊盘尺寸的3/4。
上述打线工艺中，键合方式可以为热超声波键合，键合温度为190-240℃，键合时间为5-20ms。
本实施例中，为了增加线弧最高点与万用型封装金属片之间的距离，引线4-5的线弧最高处到第二焊点的垂直高度小于60μm，线弧最高点到封装金属片底部的距离大于30μm。
实施例5
参考图4，一种具有万用型封装金属片的半导体封装件的打线工艺，包括以下步骤：
1)引线4-5对准芯片焊盘的栅极4-4，在引线端头形成球体并与的栅极4-4接触键合，折断引线；
2)引线4-5与栅极4-4的引脚焊盘对准，在引线端头形成球体；
3)将球体与栅极4-4的丝线键接引脚焊盘4-3接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
4)引导劈刀向上移动，带动引线移向芯片上的栅极4-4，形成线弧；
5)劈刀带动引线4-5与芯片栅极4-4接触，通过键合形成第二焊点；
6)折断引线，劈刀离开第二焊点；
7)通过万用型封装金属片4-1将芯片的漏极、源极，与漏极、源极的封装外引脚焊接起来。
上述打线工艺中，键合方式为热压键合，采用热压键合时，键合温度为280-380℃，键合时间为1s。
本实施例5与实施例4的区别在于，在进行反向打线工艺之前，先在芯片上的栅极上键合上一金属球，然后折断引线，之后的步骤同实施例4，增加这一步骤，能够使引线与芯片栅极的键合连接强大更大，性能更加稳定，寿命更长。
本实施例中，为了增加线弧最高点与万用型封装金属片之间的距离，引线4-5的线弧最高处到第二焊点的垂直高度小于80μm，线弧最高点到封装金属片底部的距离大于30μm。
本发明的有益效果是：本发明提供的万用型封装金属片可满足大电流、大功率芯片封装的要求，可用于任何形状的芯片设计，工艺简单，成本低。
上述说明示出并描述了本发明的优选实施例，如前所述，应当理解本发明并非局限于本文所披露的形式，不应看作是对其他实施例的排除，而可用于各种其他组合、修改和环境，并能够在本文所述发明构想范围内，通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围，则都应在本发明所附权利要求的保护范围内。

Claims (10)

1.一种具有万用型封装金属片的半导体封装件，所述半导体封装件从下至上包括集成电路层、硅层、铝层、万用型封装金属片，所述集成电路层与所述硅层之间通过焊料层连接；所述铝层与所述硅层邻接；所述万用型封装金属片与所述铝层之间通过焊料层连接；其特征在于：所述万用型封装金属片一端与芯片漏极、源极的焊盘焊接，另一端与封装外引脚焊盘焊接；所述万用型封装金属片为铜片、铜铝合金片、铜钨合金片中的一种，且覆盖半导体的漏极、源极、栅极。
2.根据权利要求1所述的一种具有万用型封装金属片的半导体封装件，其特征在于：所述万用型封装金属片的厚度为25-1000μm。
3.根据权利要求1所述的一种具有万用型封装金属片的半导体封装件，其特征在于：所述万用型封装金属片的底部与栅极对应的投影区涂覆有高介电材料层，所述高介电材料层为电阻油墨或高介电薄膜。
4.一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于，包括以下步骤：
1)引线与栅极的引脚焊盘对准，在引线端头形成球体；
2)将球体与栅极的引脚焊盘接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
3)引导劈刀向上移动，带动引线移向芯片上的栅极，形成线弧；
4)劈刀带动引线与芯片栅极的焊盘接触，通过键合形成第二焊点；
5)折断引线，劈刀离开第二焊点；
6)通过万用型封装金属片将芯片的漏极、源极与封装外引脚焊接起来。
5.根据权利要求4所述的一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于：所述引线为直径小于75μm金丝，所述引线端头的球体直径为引线直径的2-3倍。
6.根据权利要求4所述的一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于：所述键合方式为热超声波键合，所述键合温度为190-240℃，键合时间为5-20ms。
7.根据权利要求4所述的一种具有万用型封装金属的半导体封装件的打线工艺，其特征在于：所述键合方式为热压键合，所述键合温度为280-380℃，键合时间为1s。
8.根据权利要求4所述的一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于：所述线弧最高处到芯片上焊盘的垂直高度小于60μm。
9.根据权利要求4所述的一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于：所述线弧最高点到封装金属片底部的距离大于30μm。
10.一种具有万用型封装金属片的半导体封装件的打线工艺，其特征在于，包括以下步骤：
1)引线对准芯片栅极的焊盘，在引线端头形成球体并与芯片栅极键合，折断引线；
2)引线与栅极的引脚焊盘对准，在引线端头形成球体；
3)将球体与栅极的引脚焊盘接触，通过劈刀将引线球体与焊盘键合，形成第一焊点；
4)引导劈刀向上移动，带动引线移向芯片的栅极，形成线弧；
5)劈刀带动引线与芯片栅极的焊盘球体接触，通过键合形成第二焊点；
6)折断引线，劈刀离开第二焊点；
7)通过万用型封装金属片将芯片的漏极、源极与封装外引脚焊接起来。
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