CN112928033A - 半导体裸片和夹用不同的连接方法制造半导体器件的方法 - Google Patents

半导体裸片和夹用不同的连接方法制造半导体器件的方法 Download PDF

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Publication number
CN112928033A
CN112928033A CN202011408187.0A CN202011408187A CN112928033A CN 112928033 A CN112928033 A CN 112928033A CN 202011408187 A CN202011408187 A CN 202011408187A CN 112928033 A CN112928033 A CN 112928033A
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contact pad
clip
external electrical
main face
semiconductor device
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CN202011408187.0A
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R·奥特伦巴
方炽胜
蔡柔燕
李德森
烈慧君
段珂颜
王莉双
王伟姗
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Abstract

一种半导体器件(10)包括：载体(11)；第一外部电接触部(12)和第二外部电接触部(13)；半导体裸片(14)，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘(14.1)、设置在第二主面上的第二接触焊盘(14.2)以及设置在第二主面上的第三接触焊盘(14.3)，其中，半导体裸片(14)包括垂直晶体管并以其第一主面设置在载体(11)上；夹(15)，其将第二接触焊盘(14.2)连接到第二外部电接触部(13)；和第一焊线(16)，其与第一外部电接触部(12)连接，其中，第一焊线(16)连接在第三接触焊盘(14.3)与第一外部电接触部(12)之间，第一焊线(16)至少部分地设置在夹(15)下方。

Description

半导体裸片和夹用不同的连接方法制造半导体器件的方法
技术领域
本公开涉及一种用于制造半导体器件的方法以及一种半导体器件。本公开特别地涉及一种半导体器件，所述半导体器件包括：两个主面上均具有接触焊盘的半导体裸片、与接触焊盘中的一个连接的夹以及焊线，其中，焊线至少部分地设置在夹下方。
背景技术
在半导体晶体管器件的制造领域中，半导体裸片技术的改进使得减小了半导体裸片的尺寸。这使得在裸片顶部上用于将夹软焊或烧结到源电极的空间较小。为了容纳栅极焊线或电流感测焊线，通常必须减小夹的尺寸。这减少了可用于封装体的顶侧冷却的面积。
发明内容
本公开的第一方面涉及一种用于制造半导体器件的方法，包括：提供载体；提供第一和第二外部电接触部；提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管；将半导体裸片以其第一主面连接到载体；提供第一焊线；将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部；提供夹；将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部；其中，通过不同的连接方法执行将半导体裸片连接到载体和将夹连接在第二接触焊盘与第二外部电接触部之间。
本公开的第二方面涉及一种用于制造半导体器件的方法，包括：提供载体；提供第一和第二外部电接触部；提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管；将半导体裸片以其第一主面连接到载体；提供第一焊线；将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部；提供夹；将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部；其中，在将半导体裸片连接到载体的步骤与将夹连接在第二接触焊盘和第二外部电接触部之间的步骤之间执行将第一焊线连接在第一外部电接触部与第三接触焊盘之间。
本公开的第三方面涉及一种半导体器件，包括：载体；第一外部电接触部和第二外部电接触部；半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管并以其第一主面设置在载体上；夹，其将第二接触焊盘连接到第二外部电接触部；和第一焊线，其与第一外部电接触部连接，其中，第一焊线连接在第三接触焊盘与第一外部电接触部之间，第一焊线至少部分地设置在夹下方。
附图说明
所包括的附图用以提供对实施例的进一步理解，并且附图被并入本说明书中并构成本说明书的一部分。附图示出了实施例，并且与说明书一起用于解释实施例的原理。其它实施例和实施例的许多预期优点将易于理解，因为通过参考以下详细描述，它们将变得更好理解。
附图的元件不一定相对于彼此成比例。相同的附图标记表示对应的相似部件。
图1示出了用于说明根据第一方面的用于制造半导体器件的方法的流程图。
图2示出了用于说明根据第二方面的用于制造半导体器件的方法的流程图。
图3A和3B示出了根据第三方面的示例性半导体器件的俯视图(A)，以及图3A的半导体器件的从左侧观察的视图(B)，其中，焊线和夹之间具有正常间隙。
图4示出了图3B的半导体器件，其中，包封材料被施加到半导体器件，使得夹的上主面暴露于外部。
图5示出了图3A的半导体器件的从右侧观察的视图，其中，焊线和夹之间具有更大的间隙。
具体实施方式
本公开使得可以将焊线放置在裸片上并且允许将大的夹放置在裸片之上，特别是放置在半导体MOSFET裸片的源极或发射极上。大的夹可以包覆成型或暴露，以允许高效的双面冷却。
在下面的详细描述中，参考形成说明书的一部分的附图，在附图中通过图示的方式示出了可以实践本公开的特定实施例。在这方面，参考所描述附图的取向使用诸如“顶”、“底”、“前”、“背”、“前导”、“尾后”等方向性术语。因为实施例的构件可以以许多不同的取向定位，所以方向性术语用于说明的目的，而绝不是限制性的。应当理解，在不脱离本公开的范围的情况下，可以利用其它实施例以及可以进行结构或逻辑上的改变。因此，以下详细描述不应被理解为限制性的，本公开的范围由所附权利要求限定。
应当理解，除非另外特别指出，否则本文描述的各种示例性实施例的特征可以彼此组合。
如在本说明书中所采用的，术语“结合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”并不意味着元件或层必须直接接触在一起；而是可以在“结合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”的元件之间相应地设置均间元件或居间层。然而，根据本公开，上述术语还可以可选地具有特定含义，即元件或层直接接触在一起，即在“结合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”的元件之间相应地不设置居间元件或层。
此外，部件、元件或材料层形成在或位于表面“之上”中使用的词语“在...之上”在本文中可以用来表示部件、元件或材料层“间接地”位于(例如放置、形成、沉积等在)所述表面上而允许一个或多个附加部件、元件或层布置在所述表面与所述部件、元件或材料层之间。然而，部件、元件或材料层形成或位于表面“之上”中所使用的词语“在...之上”还可以可选地具有部件、元件或材料层“直接地”位于(例如放置、形成、沉积等在)所述表面上、例如与所述表面直接接触的特定含义。
在下面将描述利用诸如扩散软焊或焊膏的焊料材料的连接方法。这样的焊料材料可以包括Sn或具有两种或更多种其它元素的任何Sn合金，例如Sn/Au、Sn/Ag或Sn/Au/Ag合金。
详细说明
图1示出了用于说明根据第一方面的用于制造半导体器件的方法的流程图。
图1的方法包括：提供载体(110)；提供第一和第二外部电接触部(120)；提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管(130)；将半导体裸片以其第一主面连接到载体(140)；提供第一焊线(150)；将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部(160)；提供夹(170)；将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部(180)；其中，通过不同的连接方法执行将半导体裸片连接到载体以及将夹连接在第二接触焊盘与第二外部电接触部之间(190)。
根据图1的方法的一个实施例，通过扩散软焊、特别是无助焊剂的扩散软焊和烧结、特别是银烧结中的一种来执行将半导体裸片连接到载体。相应地，然后通过另一种方法而不是通过扩散软焊或烧结来将夹连接到第二接触焊盘。所述另一种方法可以是例如使用焊膏和使用银导电粘合剂中的一种。
根据图1的方法的一个实施例，通过使用焊膏和使用银导电粘合剂中的一种执行将夹连接到第二接触焊盘。相应地，通过另一种方法而不是通过使用焊膏或使用银导电粘合剂将半导体裸片连接到载体。所述另一种方法例如可以是扩散软焊、特别是无助焊剂的扩散软焊和烧结、特别是银烧结中的一种。
根据图1的方法的一个实施例，在将半导体裸片连接到载体与将夹连接在第二接触焊盘和第二外部电接触部之间的步骤之间执行将第一焊线连接在第一外部电接触部与第三接触焊盘之间。
根据图1的方法的一个实施例，执行将第一焊线连接到第一外部电接触部和以使第一焊线至少部分地设置在夹下方的方式将夹连接到第二接触焊盘。其示例将结合图3-5以及所呈现的半导体器件的随附描述示出。
图2示出了用于说明根据第二方面的用于制造半导体器件的方法的流程图。
图2的方法包括：提供载体(210)；提供第一和第二外部电接触部(220)；提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管(230)；将半导体裸片以其第一主面连接到载体(240)；提供第一焊线(250)；将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部(260)；提供夹(270)；将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部(280)；其中，在将半导体裸片连接到载体的步骤与将夹连接在第二接触焊盘和第二外部电接触部之间的步骤之间执行将第一焊线连接在第一外部电接触部和第三接触焊盘之间(290)。
根据图2的方法的一个实施例，通过不同的连接方法来执行将半导体裸片连接到载体和将夹连接到第二接触焊盘。
根据图2的方法的一个实施例，通过扩散软焊、特别是无助焊剂的扩散软焊和烧结、特别是银烧结中的一种来执行将半导体裸片连接到载体。然后可以不通过扩散软焊和烧结中的一种、而是通过例如使用焊膏和使用银导电粘合剂中的一种来执行将夹连接到第二接触焊盘。
根据图2的方法的一个实施例，通过使用焊膏和使用银导电粘合剂中的一种将夹连接到第二接触焊盘。然后可以不通过使用焊膏或使用银导电粘合剂，而是通过例如扩散软焊、特别是无助焊剂的扩散软焊和烧结、特别是银烧结中的一种来执行将半导体裸片连接到载体。
根据图2的方法的一个实施例，执行将第一焊线连接到第一外部电接触部和以使第一焊线至少部分地设置在夹下方的方式将夹连接到第二接触焊盘。其示例将结合图3-5以及所呈现的半导体器件的随附描述示出。
图3A和3B示出了尚未封装的半导体器件10，在所述半导体器件中，焊线部分地设置在夹下方，并且在它们之间具有正常间隙。
更特别地，图3A和3B的半导体器件10包括：载体11；第一外部接电接触部12和第二外部接电接触部13；半导体裸片14，其包括第一主面、与第一主面相反的第二主面面、设置在第一主面上的第一接触焊盘14.1、设置在第二主面上的第二接触焊盘14.2以及设置在第二主面上的第三接触焊盘14.3，其中，半导体裸片14包括垂直晶体管并以其第一主面设置在载体11上；夹15，其将第二接触焊盘14.2连接到第二外部电接触部13；和第一焊线16，其与第一外部电接触部12连接，其中，第一焊线16连接在第三接触焊盘14.3与第一外部电接触部12之间，第一焊线16至少部分地设置在夹15下方。
本公开、特别是根据第三方面的半导体器件使得可以将焊线16放置在半导体裸片14上，并且允许将相对宽的夹15放置在半导体裸片14上，特别是放置在半导体MOSFET或IGBT裸片的第二接触焊盘14.2上。以这种方式，可以用夹15覆盖第二接触焊盘14.2的大部分表面，从而更高的电流可以传导通过晶体管。
根据半导体器件10的一个实施例，与图3A和3B所示的实施例中的情况一样，第一焊线16仅部分地设置在夹15下方。但是，第一焊线也可以完全地设置在夹15下方。
根据半导体器件10的一个实施例，与图3A和3B所示的实施例中的情况一样，第二接触焊盘14.2在其大部分表面上被夹15覆盖。根据其另一示例，第二接触焊盘14.2也可以被夹15完全地覆盖。
根据半导体器件10的一个实施例，第一外部电接触部12设置在比第二外部电接触部13更低的高度水平上，以便在焊线和夹之间提供更大的间隙。稍后将结合图5示出并解释其实施例。
根据半导体器件10的一个实施例，第一接触焊盘14.1是漏极接触焊盘，第二接触焊盘14.2是源极接触焊盘，第三接触焊盘14.3是栅极接触焊盘。
根据半导体器件10的一个实施例，第四接触焊盘设置在第二主面上，其中，半导体器件还包括第三外部电接触部18和第二焊线17，其中，第二焊线17连接在第四接触焊盘与第三外部电接触部18之间。根据其另一示例，第四接触焊盘是源极感测接触焊盘。
根据半导体器件10的一个实施例，半导体器件还包括施加到裸片焊盘11、半导体裸片14以及第一外部电接触部12和第二外部电接触部13的包封材料19。包封材料可以特别地被施加成使得裸片焊盘11的下主面和夹15的上主面不被包封材料19覆盖。这种半导体器件封装体允许在客户侧高效地双面冷却。稍后将结合图4示出并解释其特定示例。
根据半导体器件10的一个实施例，半导体裸片14是硅裸片、碳化硅裸片和氮化镓裸片中的一种。
根据半导体器件10的一个实施例，载体11以及第一外部电接触部12和第二外部电接触部13以及如果存在的第三外部电接触部18是引线框架的一部分。
根据半导体器件10的一个实施例，焊线16和17由Cu或Al制成。
图4示出了封装的半导体器件20的剖视图。
更特别地，图4的半导体器件20包括图3的半导体器件10，但是其上施加有附加的包封材料19。包封材料可以通过例如传递模塑或压缩模塑施加到半导体器件10，并且可以包括例如任何种类的树脂材料、例如环氧树脂。从图4中可以看出，包封材料19被施加成使得裸片焊盘11的下主面以及夹15的上主面不被包封材料19覆盖。这允许客户高效地冷却半导体器件，因为他一方面可以经由衬底、例如PCB向下散发热量，另一方面可以在夹15的顶部放置一个适当的散热器，以经由夹15进一步散热。
图5示出了根据第三方面的又一示例性半导体器件，其在焊线与夹之间具有更大的间隙。
更特别地，图5示出了类似于图3A和3B所示的半导体器件10的半导体器件20，因此对于相同或相似的部件使用相同的附图标记。除此之外，半导体器件20包括另一特征，即，外部电接触部21，其包括将与夹15连接的第一部分21.1和将与第一焊线26连接的第二部分21.2。从图5中可以看出，与第一部分21.1相比，第二部分21.2降低，使得第二部分21.2位于比第一部分更靠近裸片焊盘11的平面中。这允许制造在焊线26与夹15之间具有更大的间隙或空间的半导体器件20。还可以存在外部电接触部21的另外的降低的部分，其可以与另外的焊线17连接。应当补充的是，该实施例特别适用于使用Al焊线的情况，因为它们的厚度可以在70至80μm的范围内。在厚度为45至55μm的Cu焊线的情况下，可以使用根据图3的实施例。
另外，尽管可能已经相对于几个实施方式中的一个实施方式公开了本公开的一个实施例的特殊特征或方面，但是这种特征或方面可以与其它实施方式的一个或多个其它特征或方面组合，这对于任何给定的或特定的应用，可能是期望的和有利的。此外，对于在详细说明或权利要求书中使用的术语“包括”、“具有”、“带有”或其其它变体而言，这些术语旨在以类似于术语“包含”的方式是开放式包括。此外，应当理解，本公开的实施例可以以分立电路、部分集成电路或完全集成电路或编程装置实现。而且，术语“示例性”仅意味着示例，而不是最佳或最优的。还应当理解，为了简单和易于理解的目的，以彼此相对的特定尺寸示出了本文所描绘的特征和/或元件，实际尺寸可能与本文所示出的实质上不同。
尽管本文已经图示和描述了特定实施例，但是本领域普通技术人员将理解，在不脱离本公开的范围的情况下，各种替代和/或等效实施方式可以替代所示出和描述的特定实施例。本申请旨在覆盖本文讨论的特定实施例的任何调整或变型。因此，本公开仅由权利要求及其等同物限制。

Claims (20)

1.一种用于制造半导体器件的方法(100)，包括：
-提供载体(110)；
-提供第一和第二外部电接触部(120)；
-提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管(130)；
-将半导体裸片以其第一主面连接到载体(140)；
-提供第一焊线(150)；
-将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部(160)；
-提供夹(170)；
-将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部(180)；
-其中，通过不同的连接方法执行将半导体裸片连接到载体和将夹连接在第二接触焊盘与第二外部电接触部之间(190)。
2.根据权利要求1所述的方法，其中，
通过扩散软焊和烧结、特别是银烧结中的一种来执行将半导体裸片连接到载体。
3.根据权利要求1或2所述的方法，其中，
通过使用焊膏和使用银导电粘合剂中的一种来将夹连接到第二接触焊盘。
4.根据前述权利要求中任一项所述的方法，其中，
在将半导体裸片连接到载体的步骤与将夹连接在第二接触焊盘和第二外部电接触部之间的步骤之间执行将第一焊线连接在第一外部电接触部与第三接触焊盘之间。
5.根据权利要求1所述的方法，其中，
执行将第一焊线连接到第一外部电接触部和以使第一焊线至少部分地设置在夹下方的方式将夹连接到第二接触焊盘。
6.一种用于制造半导体器件的方法(200)，包括：
-提供载体(210)；
-提供第一和第二外部电接触部(220)；
-提供半导体裸片，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘、设置在第二主面上的第二接触焊盘以及设置在第二主面上的第三接触焊盘，其中，半导体裸片包括垂直晶体管(230)；
-将半导体裸片以其第一主面连接到载体(240)；
-提供第一焊线(250)；
-将第一焊线的一端连接到第三接触焊盘，另一端连接到第一外部电接触部(260)；
-提供夹(270)；
-将夹的第一端连接到第二接触焊盘，第二端连接到第二外部电接触部(280)；
-其中，在将半导体裸片连接到载体的步骤与将夹连接在第二接触焊盘和第二外部电接触部之间的步骤之间执行将第一焊线连接在第一外部电接触部与第三接触焊盘之间(290)。
7.根据权利要求6所述的方法，其中，
通过不同的连接方法执行将半导体裸片连接到载体和将夹连接到第二接触焊盘。
8.根据权利要求6或7所述的方法，其中，
通过扩散软焊和烧结、特别是银烧结中的一种来执行将半导体裸片连接到载体。
9.根据权利要求6-8中任一项所述的方法，其中，
通过使用焊膏和使用银导电粘合剂中的一种来执行将夹连接到第二接触焊盘。
10.根据权利要求6-9中任一项所述的方法，其中，
执行将第一焊线连接到第一外部电接触部和以使第一焊线至少部分地设置在夹下方的方式将夹连接到第二接触焊盘。
11.一种半导体器件(10)，包括：
-载体(11)；
-第一外部电接触部(12)和第二外部电接触部(13)；
-半导体裸片(14)，其包括第一主面、与第一主面相反的第二主面、设置在第一主面上的第一接触焊盘(14.1)、设置在第二主面上的第二接触焊盘(14.2)以及设置在第二主面上的第三接触焊盘(14.3)，其中，半导体裸片(14)包括垂直晶体管并以其第一主面设置在载体(11)上；
-夹(15)，其将第二接触焊盘(14.2)连接到第二外部电接触部(13)；和
-第一焊线(16)，其与第一外部电接触部(12)连接，其中，第一焊线(16)连接在第三接触焊盘(14.3)与第一外部电接触部(12)之间，第一焊线(16)至少部分地设置在夹(15)下方。
12.根据权利要求11所述的半导体器件(10)，其中，
第一焊线(16)仅部分地设置在夹(15)下方。
13.根据权利要求11或12所述的半导体器件(10)，其中，
第二接触焊盘(14.2)在其大部分表面上被夹(15)覆盖。
14.根据权利要求13所述的半导体器件(10)，其中，
第二接触焊盘(14.2)被夹(15)完全地覆盖。
15.根据权利要求11-14中任一项所述的半导体器件(10)，其中，
第一外部电接触部(12)设置在比第二外部电接触部(13)低的高度水平上。
16.根据权利要求11-15中任一项所述的半导体器件(10)，其中，
第一接触焊盘(14.1)是漏极接触焊盘，第二接触焊盘(14.2)是源极接触焊盘，第三接触焊盘(14.3)是栅极接触焊盘。
17.根据权利要求11-16中任一项所述的半导体器件(10)，其中，所述半导体器件(10)还包括：
设置在第二主面上的第四接触焊盘；
第三外部接电接触部(18)；和
第二焊线(17)，
其中，第二焊线(17)连接在第四接触焊盘与第三外部电接触部(18)之间。
18.根据权利要求17所述的半导体器件(10)，其中，
第四接触焊盘是源极感测接触焊盘。
19.根据权利要求11-18中任一项所述的半导体器件(10)，其中，
半导体裸片(14)是硅裸片、碳化硅裸片和氮化镓裸片中的一种。
20.根据权利要求11-19中任一项所述的半导体器件(10)，其中，所述半导体器件(10)还包括：
包封材料(19)，其施加到裸片焊盘(11)、半导体裸片(14)以及第一外部电接触部(12)和第二外部电接触部(13)，使得裸片焊盘(11)的下主面和夹(15)的上主面不被包封材料(19)覆盖。
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US20140001480A1 (en) * 2012-07-02 2014-01-02 Infineon Technologies Ag Lead Frame Packages and Methods of Formation Thereof
US9018744B2 (en) * 2012-09-25 2015-04-28 Infineon Technologies Ag Semiconductor device having a clip contact
DE102014114933B4 (de) * 2014-10-15 2021-08-12 Infineon Technologies Austria Ag Halbleiterbauelement

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