EP1597755A2 - Direkt auf ungehäusten bauelementen erzeugte freitragende kontaktierstrukturen - Google Patents
Direkt auf ungehäusten bauelementen erzeugte freitragende kontaktierstrukturenInfo
- Publication number
- EP1597755A2 EP1597755A2 EP04702322A EP04702322A EP1597755A2 EP 1597755 A2 EP1597755 A2 EP 1597755A2 EP 04702322 A EP04702322 A EP 04702322A EP 04702322 A EP04702322 A EP 04702322A EP 1597755 A2 EP1597755 A2 EP 1597755A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- component
- insulating material
- electrically insulating
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000012777 electrically insulating material Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000004033 plastic Substances 0.000 claims description 14
- 229920003023 plastic Polymers 0.000 claims description 14
- 238000010030 laminating Methods 0.000 claims description 8
- 239000004809 Teflon Substances 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 238000007590 electrostatic spraying Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 2
- 150000008442 polyphenolic compounds Chemical class 0.000 claims description 2
- 235000013824 polyphenols Nutrition 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 137
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007598 dipping method Methods 0.000 description 7
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- 239000012790 adhesive layer Substances 0.000 description 6
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- 238000009413 insulation Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 241000239290 Araneae Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
- Y10T29/49149—Assembling terminal to base by metal fusion bonding
Definitions
- connection pads of unhoused electronic components to larger, solderable contact elements.
- the component to be contacted is placed on a mostly metallic, stamped contact carrier, the so-called lead frame, and the connection pads of the component are electrically connected to the individual leads of the contact carrier by wire bonding.
- Components are the use of the so-called tape automated bonding (TAB) technology.
- TAB tape automated bonding
- flexible structures with narrow, solderable internal contacts and wide, solderable external contacts are produced, the so-called spiders.
- the connection pads of the component to be contacted are connected to the internal contacts.
- the external contacts are used to make contact with the circuit carrier.
- the object of the present invention is to provide an alternative and less expensive possibility for
- the invention is based on the idea of first creating a self-supporting, planar conductor and / or insulator structure on a carrier and then detaching it therefrom. Accordingly, in a method for producing a component with a contact structure, a layer of electrically insulating material is applied to the component and a carrier arranged on and / or in the component. In particular, the carrier does not have to be covered over the entire area by the layer of electrically insulating material. An electrical contact surface of the component remains free when the layer of electrically insulating material is applied and / or is exposed after the layer of electrically insulating material is applied. Then, in a further step, a layer of electrically conductive material is applied to the layer of electrically insulating material and the electrical contact surface of the component. Finally, the layer of electrically insulating material is detached from the carrier.
- the layer of electrically conductive material can also be applied to an area of the carrier that is not covered by the layer of electrically insulating material. Then, in addition to the layer of electrically insulating material, the layer of electrically conductive material is finally detached from the carrier.
- a layer of electrically insulating material is applied to the component in a method for producing a component with a contacting structure.
- An electrical contact surface of the component remains free when the layer of electrically insulating material is applied and / or is exposed after the layer of electrically insulating material is applied.
- the carrier does not have to be covered over the entire area by the layer of electrically conductive material.
- the layer of electrically insulating material is detached from the carrier.
- the layer of insulating material and the layer of electrically conductive material form a planar, self-supporting contacting structure in the form of a conductor / insulator structure on the component.
- the component and the layers can then be at least partially housed and / or covered by a cover.
- a cover for example, the component, the layer of electrically insulating material and / or the layer of electrically conductive material, in particular with one another, are cast. This can take the form of a
- Drop passivation or a frame encapsulation (Silgel).
- another film can also be laminated on.
- a nickel / gold protective layer can also be used.
- the carrier preferably has at least partially a low surface adhesion.
- it is coated with Teflon and / or made of Teflon.
- the carrier can also have a holder for the component and / or an ejector for detaching the layer of electrically conductive and / or the layer of electrically insulating material.
- Methods particularly suitable for power components for which a contact window and a contact area of appropriate size are provided when contacting a flat conductor are provided.
- the window is in particular on the largest and / or on the side facing away from the carrier
- Component opened and preferably has an absolute size of more than 50 mm 2 , in particular more than 70 mm 2 or even more than 100 mm 2 .
- the layer of electrically insulating material can also be applied in such a way that the contact surface of the component remains at least partially free by a window with more than 60% of the size of the side and / or surface of the component opened at which the window is open, in particular more than 80%.
- the size of the window should not be more than 99.9% of the size of the side and / or area of the component on which the window is opened, in particular not more than 99% and more preferably not more than 95%.
- the carrier and the component form a surface contour.
- the layer of electrically insulating material is applied in particular to the carrier and the component in such a way that the layer of electrically insulating material follows the surface contour formed from the carrier and the component, that is to say that the layer of electrically insulating material corresponds to that of Carrier and component formed surface contour runs on the surface contour. If, on the other hand, logic chips are embedded in a polymer according to the prior art, only the underside of the polymer layer follows the surface contour, but not the polymer layer itself.
- the layer of electrically insulating material follows the surface contour formed from the carrier and the component, there are two advantages, in particular if a power component is used as the component. On the one hand, a sufficient thickness of the layer of electrically insulating material is guaranteed over the edges of the component facing away from the carrier, so that breakdown at high voltages or field strengths is prevented. On the other hand, in addition to the generally very high power component, the layer of electrically insulating material is not so thick that it would be problematic to later expose and contact contact surfaces on conductor tracks of a substrate on which the component is to be arranged later.
- the thickness of the layer of electrically insulating material above the carrier deviates in its rectilinear region by less than 50% from its thickness above the component in its rectilinear region, in particular by less than 20%.
- the thicknesses are preferably approximately the same, that is to say deviate from one another by less than 5% or even less than 1%.
- the percentages relate in particular to the thickness of the layer above the component in its rectilinear area, which accordingly indicates 100%.
- the rectilinear region is used because the layer in the inner edges of the carrier and the component is generally thicker, and generally thinner over the edges of the component facing away from the carrier.
- the layer of electrically insulating material is in particular made of plastic. Depending on the further processing, it can be photosensitive or non-photosensitive.
- curtain casting dipping, in particular one-sided dipping, spraying, in particular electrostatic spraying, printing, in particular screen printing, overmolding, dispensing, spin coating, laminating a film.
- the layer of electrically insulating material is not a film.
- the lamination is advantageously carried out in a vacuum press. Vacuum deep drawing, hydraulic vacuum pressing, vacuum gas pressure pressing or similar laminating processes are also conceivable. The pressure is advantageously applied isostatically.
- the lamination is carried out, for example, at temperatures from 100 ° C to 250 ° C and a pressure of 1 bar to 10 bar.
- the exact process parameters of lamination i.e. pressure, temperature, time etc., depend, among other things, on the topology of the component and the carrier, the plastic material of the film and the thickness of the film.
- the film can consist of any thermoplastics, thermosets and mixtures thereof.
- a film made of a plastic material based on polyimide (PI), polyethylene (PE), polyphenol, polyether ether ketone (PEEK) and / or epoxy is preferably and advantageously used as the film.
- the film can have an adhesive coating to improve the adhesion to the surface.
- the substrate surface can also be coated with an adhesion promoter, preferably silane compounds. After lamination, a tempering step is carried out in particular. The heat treatment and crosslinking improve adhesion, thermal, physical and mechanical properties of the film on the surface.
- the layer of electrically conductive material that is to say for two-dimensional contact
- physical or chemical deposition of the electrically conductive material is advantageously carried out.
- Such physical processes are sputtering and vapor deposition (Physical Vapor Deposition, PVD).
- Chemical deposition can be carried out from the gaseous phase (Chemical Vapor Deposition, CVD) and / or liquid phase (Liquid Phase Chemical Vapor Deposition). It is also conceivable that a thin electrically conductive partial layer, for example made of titanium / copper, is first applied by one of these methods, on which a thicker electrically conductive partial layer, for example made of copper, is then deposited.
- the layer of electrically insulating material is designed so that a height difference of up to 1000 ⁇ m can be overcome.
- the height difference is caused, among other things, by the topology of the carrier and the semiconductor chips arranged on and / or in the carrier.
- the thickness of the layer of electrically insulating material can be 10 ⁇ m to 500 ⁇ m.
- a layer of electrically insulating material with a thickness of 25 to 150 ⁇ m is preferably applied.
- the application is repeated until a certain thickness of the layer of electrically insulating material is reached.
- partial layers made of electrically insulating material of smaller thickness are processed to form a layer made of electrically insulating material of higher thickness.
- These sublayers electrically insulating material advantageously consist of a kind of plastic material. It is also conceivable that the partial layers made of electrically insulating material consist of several different plastic materials. The result is a layer made of partial layers of electrically insulating material.
- the electrical contact surface of the component can be left free when the layer of electrically insulating material is applied and / or later exposed.
- the complete or partial release already during application can be realized particularly advantageously if the layer of electrically insulating material is applied in the form of a film.
- a film with one or more corresponding openings or windows can be used from the outset, which can be created beforehand, for example, by inexpensive punching or cutting.
- a window in the layer of electrically insulating material is opened by laser ablation to expose the electrical contact surface of the component.
- a wavelength of a laser used for this is between 0.1 ⁇ m and 11 ⁇ m.
- the power of the laser is between 1 W and 100 W.
- a CO 2 laser with a wavelength of 9.24 ⁇ m is preferably used.
- the windows are opened without damaging a chip contact made of aluminum, gold or copper, which may be under the layer of electrically insulating material.
- a photosensitive layer made of electrically insulating material is used and a window is opened by a photolithographic process to expose the electrical contact surface of the component.
- the photolithographic process includes exposing the photosensitive layer electrically insulating material and developing and thus removing the exposed or unexposed areas of the layer of electrically insulating material.
- a cleaning step is optionally carried out in which remnants of the layer of electrically insulating material are removed.
- the cleaning step is carried out, for example, by wet chemistry. In particular, a plasma cleaning process is also conceivable.
- a layer of several partial layers of different, electrically conductive material arranged one above the other is used.
- different metal layers are applied one above the other.
- the number of sub-layers or metal layers is, in particular, 2 to 5.
- a sub-layer functioning as a diffusion barrier can be integrated, for example, by the electrically conductive layer composed of a plurality of sub-layers.
- Such a sub-layer consists, for example, of one
- Titanium-tungsten alloy TiW
- a partial layer that promotes or improves adhesion is advantageously applied directly to the surface to be contacted.
- Such a partial layer consists, for example, of titanium.
- At least one conductor track is produced from the electrically conductive material after the two-dimensional contacting and / or on the layer.
- the conductor track can be applied to the layer.
- the layer is structured to produce the conductor track.
- the conductor track is used, for example, to make electrical contact with a semiconductor chip.
- the structuring is usually carried out in a photolithographic process.
- a photoresist can be applied to the electrically conductive layer, dried and then exposed and developed.
- a tempering step may follow in order to stabilize the applied photoresist against subsequent treatment processes.
- Conventional positive and negative resists (coating materials) can be used as photoresist.
- the photo lacquer is applied, for example, by a spraying or dipping process.
- another structurable material can be used with one or more of the following
- Procedures are applied: curtain casting, dipping, in particular one-sided dipping, spraying, in particular electrostatic spraying, printing, in particular screen printing, overmolding, dispensing, spin coating, laminating a film.
- photosensitive foils can also be used, which are laminated on and exposed and developed in a manner comparable to the applied photoresist layer.
- the following can be used to produce the conductor track: in a first sub-step, the electrically conductive layer is structured and in a subsequent sub-step a further metallization is applied to the conductor track produced.
- the conductor track is reinforced.
- copper is electrodeposited to a thickness of 1 ⁇ m to 400 ⁇ m on the conductor track produced by structuring.
- the photoresist layer or the laminated film or the structurable material used alternatively is then removed. This can be done, for example, with an organic solvent, a alkaline developer or the like. Subsequent differential etching removes the flat, metallically conductive layer that is not reinforced with the metallization.
- the reinforced conductor track is retained.
- the steps of laminating, exposing, contacting and generating the conductor track repeatedly performed '.
- the invention advantageously provides a novel technology for the electrical contacting and wiring of connection pads or contact surfaces which are arranged on semiconductor chips, in particular on power semiconductor chips.
- the flat connection and the special insulation result in a low-inductance connection in order to enable fast and low-loss switching.
- An electrical insulation layer is produced by applying the layer of electrically insulating material.
- the production of the insulation layer by applying the layer of electrically insulating material according to the invention offers the following advantages: Use at high temperatures. With a suitable choice of material, a layer of electrically insulating material is heat-resistant up to 300 ° C.
- the entire chip contact area can be used so that high currents can be derived.
- the chips can be controlled homogeneously due to the flat contact.
- the inductance of the contact in a contact area is smaller due to the areal geometry than with thick wire bonding.
- Preferred and advantageous configurations of the device result from the preferred configurations of the method.
- FIG. 1 shows a method for producing a contact structure on a power semiconductor
- Figure 2 shows an alternative component with self-supporting
- Figure 3 shows the component of Figure 2 with self-supporting
- Figure 4 shows the component of Figure 2 with self-supporting
- FIG. 5 shows a further alternative component with self-supporting contacting structures while it is still arranged on a carrier;
- Figure 6 shows the component of Figure 5 with self-supporting
- FIG. 7 shows an alternative component with self-supporting contacting structures while it is arranged on a carrier for production; 8 shows the component according to FIG. 7 with self-supporting contacting structures after it has been detached from the carrier.
- FIG. 1 shows a carrier 1 made of Teflon on which a component 2 in the form of a semiconductor chip is arranged.
- a contact with a contact surface 210 facing away from the semiconductor chip 2 is present on the upper surface of the semiconductor chip 2.
- the contact area is the contact area of a collector or drain contact or an emitter or source contact.
- the entire upper surface of the carrier 1 equipped with the semiconductor chip 2 is given by the surface of the carrier 1 itself and by the free surface of the semiconductor chip 2, which is determined by the upper surface and the lateral surface of this chip 2.
- a layer 3 of electrically insulating plastic material is vacuum-coated onto the entire surface of the carrier 1 equipped with the semiconductor chip 2 applied so that the layer 3 of electrically insulating material covers the surface of the carrier 1 equipped with the semiconductor chip 2 with the contact surfaces in a closely fitting manner and adheres to this surface.
- the layer 3 made of electrically insulating material follows the surface contour given by the exposed parts of the surface of the carrier and by the free surface of the semiconductor chip 2, which is determined by the upper surface and the lateral surface of this chip 2.
- the layer 3 made of electrically insulating material is preferably applied in step 301 using one or more of the following procedures: curtain casting, dipping, in particular one-sided dipping, spraying, in particular electrostatic spraying, printing, in particular screen printing, overmolding, dispensing, spin coating.
- the layer 3 made of electrically insulating material can also be applied particularly well by laminating on a film, in particular a film made of a plastic material based on polyimide or epoxy. A tempering step can follow for better adhesion.
- the layer 3 made of electrically insulating material serves as an insulator and as a carrier for a layer 4 made of electrically conductive material that is applied further on.
- Typical thicknesses of the layer 3 made of electrically insulating material are in the range of 25-150 ⁇ m, whereby larger thicknesses can also be achieved from layer sequences of thinner partial layers made of electrically insulating material. This advantageously enables insulation field strengths in the range of a few 10 kV / m to be achieved.
- step 302 the contact surface 210 of the component to be contacted is now exposed by opening a window 31 in the layer 3 made of electrically insulating material.
- areas of the carrier 1 are exposed by opening a respective window 31 in the layer 3 made of electrically insulating material.
- Contact surface (210) of the component is opened is more than 60% of the size of the component, in particular more than 80%.
- One of the windows 31 in the layer 3 made of electrically insulating material is preferably opened by laser ablation.
- step 303 the exposed contact area 210 of the component and each exposed area on the carrier 1 are contacted with a surface 4 with a layer 4 of electrically conductive material, preferably metal, by metallizing the exposed contact area and the exposed areas of the carrier 1 using the customary methods and structured and thus contacted in a planar manner.
- electrically conductive material preferably metal
- the layer 4 made of electrically conductive material can be applied over the entire surface both to each contact surface and to the upper surface of the layer 3 made of electrically insulating material facing away from the surface of the support 1 and can then be structured photolithographically, for example, so that each contact surface remains in contact with the surface and Via the contact surface 210, the exposed areas of the carrier 1 and the layer 3 made of insulating material, conductor tracks 4, 6 are formed.
- i) Sputtering a Ti adhesive layer of approximately 100 nm in thickness and a Cu conductive layer 4 of approximately 200 nm in thickness (step 303). ii). Photolithography using thick layers of lacquer or photo films 5 (step 304).
- Galvanic reinforcement of the freely developed areas with an electrically conductive layer 6 of greater thickness is possible here (step 305).
- a mask is applied to the upper surface of the layer 3 made of electrically insulating material facing away from the surface of the substrate 1, said mask covering the contact area and areas for the exposed areas of the carrier 1 and leaves the layer 3 of insulating material running conductor tracks 4, 6 free, and then the layer 4 of the electrically conductive material is applied over the entire surface of the mask and the contact surfaces 210 and 112 and the areas free of the mask.
- the mask with the layer 4 located thereon is then removed, so that only the surface-contacted contact area 210 and the conductor tracks 4, 6 running over the contact area 210, the exposed areas of the carrier 1 and the layer 3 made of insulating material remain on the mask-free areas stay.
- this is a device made of a component 2 with a surface on which an electrical contact surface
- an insulator in the form of a layer 3 of electrically insulating material is applied to the surface, which lies closely against the surface and adheres to the surface, and in which layer 3 of electrically insulating material in each case at the contact surfaces Has window 31, in which this contact surface is free of layer 3 from electrical insulating material and is surface-contacted with a layer 4 and, for example, additionally with a layer 6 of electrically conductive material.
- the device shown in Figure 2 is produced using a similar manufacturing process to that shown in Figure 1.
- the self-supporting contact structures 3, 4, 6 of the component 2 are manufactured using the following process steps:
- component 2 which can also be in the form of a module, on one or more suitably shaped carriers 1 coated with Teflon or similar plastics.
- a layer 4 of electrically conductive material in the form of a thin, adhesive metallization for example a titanium adhesive layer, in particular by sputtering or vapor deposition.
- a lacquer for example by spin coating, lacquer spraying, electrophoretic coating and subsequent photolithography or by a printing process.
- connection contact structures are thus generated directly on the component 2. This eliminates the connection technology, that is, soldering or wire bonding, between the component and the contact element known from the prior art in the form of a lead frame or spider.
- the conductor track 4, 6 produced in the form of a copper foil for direct electrical connection is low-inductance, suitable for high currents and inexpensive.
- Bond connection has a very low overall height, since the bond loop is not required.
- the technology can also be used to manufacture connection structures of components in the form of modules that contain several individual components.
- the component 2 is arranged on a copper layer on means 8 for heat dissipation (heatsink), while the self-supporting contacting structures 3, 4, 6 are produced.
- the component 2 and the means 8 for heat dissipation are surrounded by supports 1 which are arranged to the left and right of the component 2 and the means 8 for heat dissipation.
- supports 1 which are arranged to the left and right of the component 2 and the means 8 for heat dissipation.
- two sub-carriers of the same carrier can also be used.
- contacting structures are to be created which surround the component 2, that is to say after all four
- the sub-carriers can belong to the same carrier, which is then in the form of a Carrier plate extends around the component, which is arranged in a recess of this carrier plate.
- step 306 the component 2 with the self-supporting contacting structures 3, 4, 6 and the plastic cover 7 is detached from the carrier 1 and installed in its destination in step 307.
- the component 2 is glued to a metal housing 9 via its means 8 for heat dissipation by means of a heat-conducting adhesive 8 or such a film.
- the electrically conductive copper layer 6 of greater thickness is connected to conductor tracks 11 of a circuit board, in particular a PCB circuit board, at contact areas on which it has been freed from the layer 4 of electrically conductive material in the form of an adhesive layer. This is done via solder connections 12.
- the component 2 is a power transistor and accordingly there are 10 conductor tracks 11 on the printed circuit board
- the exemplary embodiment according to FIG. 5 differs from that according to FIG. 2 in that the component 2 is not arranged on, but on the carrier 1.
- the carrier 1 is particularly designed in two respects. On the one hand, it has a holder 13 in which the component 2 is held securely during the manufacturing process.
- ejectors 14 are arranged in the carrier 1, which can be moved out of the carrier 1 and, when moving out, the component 2 with the self-supporting contacting structures 3, 4, 6, that is to say the possibly still partially present layer 3 made of electrically insulating material and the conductor tracks 4, 6 from the layer 4 made of electrically conductive material and the electrically conductive Layer 6 of greater thickness, and eject with the cover 7 in the form of a globtop.
- step 306 also includes etching, in particular etching away, of the layer 4 of electrically conductive material formed by a titanium adhesive layer at the points at which the electrically conductive copper layer 6 of greater thickness is to be soldered later.
- FIG. 6 shows this component 2 with the self-supporting contacting structures and the cover in the isolated, tradable state.
- the conductor tracks 4, 6 of the self-supporting contacting structures 3, 4, 6 have the shape of a copper foil due to their manufacturing process and are therefore particularly low-inductance and suitable for high currents.
- FIGS. 7 and 8 differs from that shown in FIGS. 5 and 6 in that the component 2 in the form of a chip is not arranged in a holder of the carrier, but in a recess in the carrier 1, the depth of which in corresponds approximately to the height of the component and its dimensions perpendicular to its depth approximately the dimensions of the
- Component correspond perpendicular to its height.
- the contacting structure 3, 4, 6 produced on the component 2 is not brought down to the side of the component 2 located at the bottom during the production of the component 2, but remains approximately at the level or above the level of the side of the component located above during production 2.
- This has the advantage that the electrically conductive layer 6 of greater thickness to be contacted does not first have to be freed from the adhesive layer or the film at its contact surfaces, since theirs are directly at the
- Manufacturing facing up, bare surfaces can be used for soldering by the component 2 with his the manufacturing side located on a substrate facing it can be arranged.
- the contact surfaces 610 that is to say the solderable leads, of the electrically conductive layer 6 of greater thickness of the conductor track 4, 6 are correctly placed and soldered using methods known from SMD technology.
- SMD technology On the assembled PCB circuit board you can also use a bracket soldering technique like the TAB.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Connector Housings Or Holding Contact Members (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10308928A DE10308928B4 (de) | 2003-02-28 | 2003-02-28 | Verfahren zum Herstellen freitragender Kontaktierungsstrukturen eines ungehäusten Bauelements |
DE10308928 | 2003-02-28 | ||
PCT/EP2004/000263 WO2004077546A2 (de) | 2003-02-28 | 2004-01-15 | Direkt auf ungehäusten bauelementen erzeugte freitragende kontaktierstrukturen |
Publications (1)
Publication Number | Publication Date |
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EP1597755A2 true EP1597755A2 (de) | 2005-11-23 |
Family
ID=32842057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP04702322A Withdrawn EP1597755A2 (de) | 2003-02-28 | 2004-01-15 | Direkt auf ungehäusten bauelementen erzeugte freitragende kontaktierstrukturen |
Country Status (7)
Country | Link |
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US (1) | US7368324B2 (de) |
EP (1) | EP1597755A2 (de) |
JP (1) | JP2006519475A (de) |
KR (1) | KR20050106467A (de) |
CN (1) | CN1754255A (de) |
DE (1) | DE10308928B4 (de) |
WO (1) | WO2004077546A2 (de) |
Families Citing this family (15)
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US7208347B2 (en) * | 2003-02-28 | 2007-04-24 | Siemens Aktiengesellschaft | Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours |
DE102004057494A1 (de) * | 2004-11-29 | 2006-06-08 | Siemens Ag | Metallisierte Folie zur flächigen Kontaktierung |
DE102006012007B4 (de) * | 2005-03-16 | 2013-05-16 | Infineon Technologies Ag | Leistungshalbleitermodul mit oberflächenmontierbaren flachen Außenkontakten und Verfahren zur Herstellung desselben und dessen Verwendung |
DE102005037321B4 (de) | 2005-08-04 | 2013-08-01 | Infineon Technologies Ag | Verfahren zur Herstellung von Halbleiterbauteilen mit Leiterbahnen zwischen Halbleiterchips und einem Schaltungsträger |
DE102006013076A1 (de) * | 2006-03-22 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit Passivierungsschicht und zugehöriges Herstellungsverfahren |
US7524775B2 (en) | 2006-07-13 | 2009-04-28 | Infineon Technologies Ag | Method for producing a dielectric layer for an electronic component |
DE102007007142B4 (de) | 2007-02-09 | 2008-11-13 | Infineon Technologies Ag | Nutzen, Halbleiterbauteil sowie Verfahren zu deren Herstellung |
US7759777B2 (en) | 2007-04-16 | 2010-07-20 | Infineon Technologies Ag | Semiconductor module |
DE102007017831B8 (de) * | 2007-04-16 | 2016-02-18 | Infineon Technologies Ag | Halbleitermodul und ein Verfahren zur Herstellung eines Halbleitermoduls |
US7879652B2 (en) * | 2007-07-26 | 2011-02-01 | Infineon Technologies Ag | Semiconductor module |
US7955901B2 (en) | 2007-10-04 | 2011-06-07 | Infineon Technologies Ag | Method for producing a power semiconductor module comprising surface-mountable flat external contacts |
US8618674B2 (en) * | 2008-09-25 | 2013-12-31 | Infineon Technologies Ag | Semiconductor device including a sintered insulation material |
US8710665B2 (en) | 2008-10-06 | 2014-04-29 | Infineon Technologies Ag | Electronic component, a semiconductor wafer and a method for producing an electronic component |
DE102009036418B4 (de) * | 2009-08-06 | 2011-06-22 | Siemens Aktiengesellschaft, 80333 | Wellenleiter, insbesondere beim Dielektrikum-Wand-Beschleuniger |
DE102012216926A1 (de) * | 2012-09-20 | 2014-03-20 | Jumatech Gmbh | Verfahren zur Herstellung eines Leiterplattenelements sowie Leiterplattenelement |
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DE9109295U1 (de) * | 1991-04-11 | 1991-10-10 | Export-Contor Außenhandelsgesellschaft mbH, 8500 Nürnberg | Elektronische Schaltungsanordnung |
US5291066A (en) | 1991-11-14 | 1994-03-01 | General Electric Company | Moisture-proof electrical circuit high density interconnect module and method for making same |
US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
JPH09503622A (ja) * | 1993-09-30 | 1997-04-08 | コピン・コーポレーシヨン | 転写薄膜回路を使用した3次元プロセッサー |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
US5653019A (en) * | 1995-08-31 | 1997-08-05 | Regents Of The University Of California | Repairable chip bonding/interconnect process |
US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US6706546B2 (en) * | 1998-10-09 | 2004-03-16 | Fujitsu Limited | Optical reflective structures and method for making |
SG83785A1 (en) * | 1999-04-30 | 2001-10-16 | Esec Trading Sa | Apparatus and method for mounting semiconductor chips on a substrate |
DE10004410A1 (de) * | 2000-02-02 | 2001-08-16 | Infineon Technologies Ag | Halbleiterbauelement mit an der Unterseite befindlichen Kontakten und Verfahren zur Herstellung |
US7208347B2 (en) * | 2003-02-28 | 2007-04-24 | Siemens Aktiengesellschaft | Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours |
US7427532B2 (en) * | 2003-02-28 | 2008-09-23 | Siemens Aktiengesellschaft | Method of manufacturing a device having a contacting structure |
-
2003
- 2003-02-28 DE DE10308928A patent/DE10308928B4/de not_active Expired - Fee Related
-
2004
- 2004-01-15 KR KR1020057016079A patent/KR20050106467A/ko not_active Application Discontinuation
- 2004-01-15 EP EP04702322A patent/EP1597755A2/de not_active Withdrawn
- 2004-01-15 US US10/547,174 patent/US7368324B2/en not_active Expired - Fee Related
- 2004-01-15 CN CNA2004800052104A patent/CN1754255A/zh active Pending
- 2004-01-15 WO PCT/EP2004/000263 patent/WO2004077546A2/de active Search and Examination
- 2004-01-15 JP JP2005518520A patent/JP2006519475A/ja not_active Withdrawn
Non-Patent Citations (1)
Title |
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None * |
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US20060248716A1 (en) | 2006-11-09 |
DE10308928B4 (de) | 2009-06-18 |
WO2004077546A2 (de) | 2004-09-10 |
WO2004077546A3 (de) | 2005-05-19 |
CN1754255A (zh) | 2006-03-29 |
JP2006519475A (ja) | 2006-08-24 |
DE10308928A1 (de) | 2004-09-09 |
US7368324B2 (en) | 2008-05-06 |
KR20050106467A (ko) | 2005-11-09 |
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