EP1218945A1 - Ensemble circuit servant a former un condensateur mos a faible dependance vis-a-vis de la tension et a faible encombrement - Google Patents

Ensemble circuit servant a former un condensateur mos a faible dependance vis-a-vis de la tension et a faible encombrement

Info

Publication number
EP1218945A1
EP1218945A1 EP00978967A EP00978967A EP1218945A1 EP 1218945 A1 EP1218945 A1 EP 1218945A1 EP 00978967 A EP00978967 A EP 00978967A EP 00978967 A EP00978967 A EP 00978967A EP 1218945 A1 EP1218945 A1 EP 1218945A1
Authority
EP
European Patent Office
Prior art keywords
circuit arrangement
mos
transistors
gate
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00978967A
Other languages
German (de)
English (en)
Inventor
Thomas Tille
Doris Schmitt-Landsiedel
Jens Sauerbrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19961487A external-priority patent/DE19961487B4/de
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1218945A1 publication Critical patent/EP1218945A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Abstract

L'invention concerne un ensemble circuit comportant des transistors MOS (T1, T2), à canal court, présentant le même type de canal, montés en anti-série ou antiparallèle. Elle concerne en particulier le mode de déplétion exclusif dudit ensemble circuit dans la plage de tension requise. Le recours à des capacités extrinsèques permet d'obtenir une augmentation considérable de la capacité utile (A, B) par rapport aux ensembles circuits classiques comportant des transistors MOS classiques à canal long. Ces circuits permettent d'obtenir une réduction importante de l'encombrement et des coûts.
EP00978967A 1999-09-30 2000-09-29 Ensemble circuit servant a former un condensateur mos a faible dependance vis-a-vis de la tension et a faible encombrement Withdrawn EP1218945A1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE19947116 1999-09-30
DE19947116 1999-09-30
DE19946977 1999-09-30
DE19946977 1999-09-30
DE19961487A DE19961487B4 (de) 1999-09-30 1999-12-20 Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf
DE19961487 1999-12-20
PCT/DE2000/003479 WO2001024277A1 (fr) 1999-09-30 2000-09-29 Ensemble circuit servant a former un condensateur mos a faible dependance vis-a-vis de la tension et a faible encombrement

Publications (1)

Publication Number Publication Date
EP1218945A1 true EP1218945A1 (fr) 2002-07-03

Family

ID=27219302

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00978967A Withdrawn EP1218945A1 (fr) 1999-09-30 2000-09-29 Ensemble circuit servant a former un condensateur mos a faible dependance vis-a-vis de la tension et a faible encombrement

Country Status (3)

Country Link
US (1) US6700149B2 (fr)
EP (1) EP1218945A1 (fr)
WO (1) WO2001024277A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10207739A1 (de) * 2002-02-22 2003-09-11 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einer Parallelschaltung gekoppelter Kapazitäten
TWI373925B (en) * 2004-02-10 2012-10-01 Tridev Res L L C Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit
US7508898B2 (en) * 2004-02-10 2009-03-24 Bitwave Semiconductor, Inc. Programmable radio transceiver
US7672645B2 (en) 2006-06-15 2010-03-02 Bitwave Semiconductor, Inc. Programmable transmitter architecture for non-constant and constant envelope modulation
US20080111642A1 (en) * 2006-11-09 2008-05-15 Jose Bohorquez Apparatus and methods for vco linearization
JP5233604B2 (ja) * 2008-11-13 2013-07-10 富士通株式会社 半導体装置
US8143941B2 (en) * 2009-11-12 2012-03-27 Qualcomm, Incorporated Active analog filter having a MOS capacitor device with improved linearity
US10892260B2 (en) 2019-03-06 2021-01-12 Himax Technologies Limited Capacitor
TWI686956B (zh) * 2019-03-21 2020-03-01 奇景光電股份有限公司 電容器
CN111785716B (zh) * 2019-04-03 2023-05-23 奇景光电股份有限公司 电容器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268951A (en) * 1978-11-13 1981-05-26 Rockwell International Corporation Submicron semiconductor devices
NL8003874A (nl) 1980-07-04 1982-02-01 Philips Nv Veldeffektcapaciteit.
US4786828A (en) 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
IT1225614B (it) 1988-08-04 1990-11-22 Sgs Thomson Microelectronics Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato
JPH0582741A (ja) * 1991-09-20 1993-04-02 Fujitsu Ltd Ｍｏｓキヤパシタ
US5576565A (en) * 1993-03-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. MIS capacitor and a semiconductor device utilizing said MIS capacitor
JPH07221599A (ja) * 1994-02-08 1995-08-18 Nippondenso Co Ltd キャパシタ回路及びそれを用いたスイッチトキャパシタフィルタ
DE4447307A1 (de) * 1994-12-31 1996-07-04 Bosch Gmbh Robert Schaltungsanordnung zur Verminderung der Spannungsabhängigkeit einer MOS-Kapazität
US6028473A (en) * 1995-03-09 2000-02-22 Macronix International Co., Ltd. Series capacitor charge pump with dynamic biasing
US5801411A (en) * 1996-01-11 1998-09-01 Dallas Semiconductor Corp. Integrated capacitor with reduced voltage/temperature drift
US5926064A (en) 1998-01-23 1999-07-20 National Semiconductor Corporation Floating MOS capacitor
US6472233B1 (en) * 1999-08-02 2002-10-29 Advanced Micro Devices, Inc. MOSFET test structure for capacitance-voltage measurements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0124277A1 *

Also Published As

Publication number Publication date
US6700149B2 (en) 2004-03-02
US20020135044A1 (en) 2002-09-26
WO2001024277A1 (fr) 2001-04-05

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