DE69517978T2 - Nichtflüchtige speicheranordnung mit schutzanordnung - Google Patents

Nichtflüchtige speicheranordnung mit schutzanordnung

Info

Publication number
DE69517978T2
DE69517978T2 DE69517978T DE69517978T DE69517978T2 DE 69517978 T2 DE69517978 T2 DE 69517978T2 DE 69517978 T DE69517978 T DE 69517978T DE 69517978 T DE69517978 T DE 69517978T DE 69517978 T2 DE69517978 T2 DE 69517978T2
Authority
DE
Germany
Prior art keywords
arrangement
volatile storage
protection
storage arrangement
protection arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517978T
Other languages
English (en)
Other versions
DE69517978D1 (de
Inventor
Hao Fang
Sameer Haddad
Chi Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69517978D1 publication Critical patent/DE69517978D1/de
Application granted granted Critical
Publication of DE69517978T2 publication Critical patent/DE69517978T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE69517978T 1994-10-13 1995-09-29 Nichtflüchtige speicheranordnung mit schutzanordnung Expired - Fee Related DE69517978T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/322,811 US5457336A (en) 1994-10-13 1994-10-13 Non-volatile memory structure including protection and structure for maintaining threshold stability
PCT/US1995/012901 WO1996013057A2 (en) 1994-10-13 1995-09-29 Non-volatile memory structure including protection device

Publications (2)

Publication Number Publication Date
DE69517978D1 DE69517978D1 (de) 2000-08-17
DE69517978T2 true DE69517978T2 (de) 2001-02-22

Family

ID=23256536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517978T Expired - Fee Related DE69517978T2 (de) 1994-10-13 1995-09-29 Nichtflüchtige speicheranordnung mit schutzanordnung

Country Status (5)

Country Link
US (1) US5457336A (de)
EP (1) EP0763258B1 (de)
DE (1) DE69517978T2 (de)
TW (1) TW295683B (de)
WO (1) WO1996013057A2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6241069B1 (en) 1990-02-05 2001-06-05 Cummins-Allison Corp. Intelligent currency handling system
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US5909502A (en) * 1996-09-17 1999-06-01 Cummins-Allison Corp. Software loading system for a currency scanner
US5886539A (en) * 1997-04-10 1999-03-23 Advanced Micro Devices, Ind Communication within an integrated circuit by data serialization through a metal plane
EP0981806A4 (de) 1997-05-07 2001-01-03 Cummins Allison Corp Intelligentes geldverarbeitungssystem
US6039645A (en) 1997-06-24 2000-03-21 Cummins-Allison Corp. Software loading system for a coin sorter
FR2766013B1 (fr) * 1997-07-10 1999-09-10 Sgs Thomson Microelectronics Piste d'interconnexion reliant, sur plusieurs niveaux de metallisation, une grille isolee d'un transistor a une diode de decharge au sein d'un circuit integre, et procede de realisation d'une telle piste
US5903521A (en) * 1997-07-11 1999-05-11 Advanced Micro Devices, Inc. Floating point timer
US5940623A (en) 1997-08-01 1999-08-17 Cummins-Allison Corp. Software loading system for a coin wrapper
US6122278A (en) * 1997-08-07 2000-09-19 Advanced Micro Devices, Inc. Circuit and method for protocol header decoding and packet routing
US5943206A (en) * 1997-08-19 1999-08-24 Advanced Micro Devices, Inc. Chip temperature protection using delay lines
US5890100A (en) * 1997-08-19 1999-03-30 Advanced Micro Devices, Inc. Chip temperature monitor using delay lines
US6192069B1 (en) 1997-11-03 2001-02-20 Advanced Micro Devices, Inc. Circuit and methodology for transferring signals between semiconductor devices
US6084933A (en) * 1997-11-17 2000-07-04 Advanced Micro Devices, Inc. Chip operating conditions compensated clock generation
US5852616A (en) * 1997-11-17 1998-12-22 Advanced Micro Devices, Inc. On-chip operating condition recorder
US6031473A (en) * 1997-11-17 2000-02-29 Advanced Micro Devices, Inc. Digital communications using serialized delay line
US5942937A (en) * 1997-11-19 1999-08-24 Advanced Micro Devices, Inc. Signal detection circuit using a plurality of delay stages with edge detection logic
US5900834A (en) * 1997-12-18 1999-05-04 Advanced Micro Devices, Inc. Doppler shift detector
US6178208B1 (en) 1997-12-18 2001-01-23 Legerity System for recovery of digital data from amplitude and phase modulated line signals using delay lines
US6255969B1 (en) 1997-12-18 2001-07-03 Advanced Micro Devices, Inc. Circuit and method for high speed bit stream capture using a digital delay line
US6091348A (en) * 1997-12-18 2000-07-18 Advanced Micro Devices, Inc. Circuit and method for on-the-fly bit detection and substitution
US6064232A (en) * 1997-12-18 2000-05-16 Advanced Micro Devices, Inc. Self-clocked logic circuit and methodology
US6078627A (en) * 1997-12-18 2000-06-20 Advanced Micro Devices, Inc. Circuit and method for multilevel signal decoding, descrambling, and error detection
US6046620A (en) * 1997-12-18 2000-04-04 Advanced Micro Devices, Inc. Programmable delay line
US6218880B1 (en) 1997-12-18 2001-04-17 Legerity Analog delay line implemented with a digital delay line technique
JP3049001B2 (ja) * 1998-02-12 2000-06-05 日本電気アイシーマイコンシステム株式会社 ヒューズ装置およびその製造方法
US6493461B1 (en) 1998-03-17 2002-12-10 Cummins-Allison Corp. Customizable international note counter
US6063666A (en) * 1998-06-16 2000-05-16 Advanced Micro Devices, Inc. RTCVD oxide and N2 O anneal for top oxide of ONO film
US6074917A (en) * 1998-06-16 2000-06-13 Advanced Micro Devices, Inc. LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices
US6309927B1 (en) 1999-03-05 2001-10-30 Advanced Micro Devices, Inc. Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices
US6162684A (en) * 1999-03-11 2000-12-19 Advanced Micro Devices, Inc. Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices
FR2803100B1 (fr) * 1999-12-28 2002-12-06 St Microelectronics Sa Dispositif de protection de lignes d'interconnexions dans un circuit integre
US6750157B1 (en) 2000-10-12 2004-06-15 Advanced Micro Devices, Inc. Nonvolatile memory cell with a nitridated oxide layer
DE10211359A1 (de) * 2002-03-14 2003-10-02 Infineon Technologies Ag Ermittlungs-Anordnung, Verfahren zum Ermitteln elektrischer Ladungsträger und Verwendung eines ONO-Feldeffekttransistors zum Ermitteln einer elektrischen Aufladung
US6731179B2 (en) 2002-04-09 2004-05-04 International Business Machines Corporation System and method for measuring circuit performance degradation due to PFET negative bias temperature instability (NBTI)
US7375393B1 (en) * 2005-01-27 2008-05-20 National Semiconductor Corporation Non-volatile memory (NVM) retention improvement utilizing protective electrical shield
US8816438B2 (en) * 2012-12-14 2014-08-26 Spansion Llc Process charging protection for split gate charge trapping flash

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614223B1 (de) * 1993-02-17 1999-10-13 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit Schutzdiode
US5315145A (en) * 1993-07-16 1994-05-24 Board Of Trustees Of The Leland Stanford Junior University Charge monitoring device for use in semiconductor wafer fabrication for unipolar operation and charge monitoring

Also Published As

Publication number Publication date
US5457336A (en) 1995-10-10
EP0763258B1 (de) 2000-07-12
WO1996013057A2 (en) 1996-05-02
WO1996013057A3 (en) 1996-08-01
DE69517978D1 (de) 2000-08-17
EP0763258A2 (de) 1997-03-19
TW295683B (de) 1997-01-11

Similar Documents

Publication Publication Date Title
DE69517978T2 (de) Nichtflüchtige speicheranordnung mit schutzanordnung
DE59813594D1 (de) Sonnenschutzmittel mit Ultraspektralschutz
DE1027257T1 (de) Giessfüllen-einsatz mit orginalitätsschutz
DE69736080D1 (de) Ferroelekrische Speicheranordnung
DE69411406T2 (de) Stromspeicher
DE69808240D1 (de) Speicherungselement
DE69517265D1 (de) Speicheranordnung
DE69702657D1 (de) Speicheranordnung
DE69421993D1 (de) Völlig anpassungsfähige Speicheranordnung
DE69522405D1 (de) Speicheranordnung
DE69510589D1 (de) Batterieschutz
DE69739435D1 (de) Lagerwerkstoff
DE69502400D1 (de) Feuerdetektor mit nichtflüchtigem speicher
DE69514449T2 (de) Speicheranordnung
DE69700156T2 (de) Serieller Zugriffsspeicher mit Schreibsicherung
DE29517528U1 (de) Speicher
DE69725131D1 (de) Kurbelwellenlagerung
DE69531287D1 (de) Verbesserte speicheranordnungen
DE59307771D1 (de) Speicherelement
DE69420041T2 (de) Store
FI930686A0 (fi) Säilytyskotelo
DE29512131U1 (de) Schichtenspeicheranordnung
KR960014863A (ko) 저장고
FI3157U1 (fi) Säilytyskotelo
DE9408634U1 (de) Speicher

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee