EP1185143A9 - Heizplatte und leitfähige paste - Google Patents

Heizplatte und leitfähige paste

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Publication number
EP1185143A9
EP1185143A9 EP00922933A EP00922933A EP1185143A9 EP 1185143 A9 EP1185143 A9 EP 1185143A9 EP 00922933 A EP00922933 A EP 00922933A EP 00922933 A EP00922933 A EP 00922933A EP 1185143 A9 EP1185143 A9 EP 1185143A9
Authority
EP
European Patent Office
Prior art keywords
hot plate
noble metal
grains
glass frit
bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00922933A
Other languages
English (en)
French (fr)
Other versions
EP1185143A4 (de
EP1185143A1 (de
Inventor
Yanling Ibiden Co. Ltd. Ogaki-Kita Plant ZHOU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Publication of EP1185143A1 publication Critical patent/EP1185143A1/de
Publication of EP1185143A9 publication Critical patent/EP1185143A9/de
Publication of EP1185143A4 publication Critical patent/EP1185143A4/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits

Definitions

  • the present invention relates to a hot plate, which uses a ceramic substrate, and a conductive paste.
  • a heating apparatus which is referred to as a hot plate, is normally used.
  • a resistor which functions as a conductive layer and which has a predetermined pattern, is formed on one side of the alumina substrate.
  • a terminal connection pad is formed on part of the resistor.
  • Such conductive layer is formed by applying, heating, and bonding an alumina substrate silver paste to the substrate. Subsequently, a terminal pin is soldered to the pad, and the terminal pin is connected to a power source by a wire.
  • a silicon wafer which is a heated subject, is placed on an upper surface of the hot plate. When the resistor is energized in this state, the silicon wafer is heated to 100°C or higher.
  • a conductive paste including 60wt% to 80wt% of silver, 1wt% to 10wt% of glass frit, the base of which is lead boron silicate, 1wt% to 10wt% of a binder, and 10wt% to 30wt% of a solvent is often used to form a conductive pattern layer (refer to Japanese Unexamined Patent Publication No. 4-300249).
  • Glass frit, which is a secondary component, is especially required to obtain the optimal adhesion for the conductive pattern layer.
  • the heat produced when bonding the paste causes the oxides in the paste to react with aluminum nitride and produce a large amount of alumina and nitrogen gas. This is considered to occur mainly because of the large amount of oxides, especially lead oxide, in the glass frit.
  • the high pressure of the nitrogen gas produced during the bonding of the paste forces the nitrogen gas to pass through the grain boundary of the silver grains toward the exterior of the conductive pattern layer.
  • the conductive pattern layer is apt to expand and the accuracy for forming the pattern decreases.
  • the specific resistance of the conductive pattern layer be increased.
  • the ratio of the conductive components occupying the conductive pattern layer would decrease and, as a result, increase the specific resistance.
  • a first perspective of the present invention is a hot plate that uses a ceramic substrate provided with a conductive layer.
  • the conductive layer includes ruthenium oxide, glass frit, and noble metal grains.
  • the conductive layer includes ruthenium oxide.
  • reaction between the glass frit and the ceramic substrate is suppressed even if the added amount of the glass frit is relatively large (10wt% or greater relative to the noble metal) to increase the specific resistance.
  • the conductive layer has a specific resistance that is 10 ⁇ cm or greater.
  • the ruthenium oxide itself functions to increase the specific resistance.
  • the ceramic substrate includes ruthenium oxide, bismuth or its oxide, glass frit, and noble metal grains. By adding bismuth or its oxide, reaction between the glass frit and the ceramic substrate is suppressed. Thus, the conductive layer has superior adhesion.
  • the ceramic substrate be a ceramic nitride substrate or a ceramic carbide substrate.
  • the employment of a ceramic nitride substrate or a ceramic carbide substrate improves thermal conductivity and high-temperature heat resistance.
  • the employment of the aluminum nitride substrate, which especially has superior heat resistance and high thermal conductivity, enables the hot plate to withstand usage under high temperatures and the hot plate is thus practical.
  • the glass frit includes zinc boron silicate. Differing from the conventional product, which includes lead boron silicate, the glass frit, which includes zinc boron silicate, reacts with the nitride in the ceramic substrate and has a small amount of oxide that produces nitrogen gas. Accordingly, even if the conductive layer is formed using a material including zinc boron silicate, a large amount of nitrogen gas is not produced and the expansion of the conductive layer is suppressed.
  • the noble metal grains is at least one selected from gold grains, silver grains, platinum grains, and palladium grains. Since the used metal grains resists oxidization even when exposed to high temperatures and has a sufficiently large resistance, a conductive layer optimal for functioning as a resistor that produces heat is easily formed.
  • a second perspective according to the present invention is a conductive paste including ruthenium oxide, glass frit, and noble metal grains.
  • a third perspective according to the present invention is a conductive paste including ruthenium oxide, bismuth or its oxide, glass frit, and noble metal grains.
  • a hot plate unit 1 according to one embodiment of the present invention will now be described with reference to Figs. 1 and 2.
  • the hot plate unit 1 which is shown in Fig. 1, is formed by the main elements of a casing 2 and a hot plate 3.
  • the casing 2 is a cup-like metal member having an opened portion 4, the cross-section of which is round, located at its upper portion.
  • the casing 2 does not have to be cup-like and may have an opened bottom.
  • a hot plate 3 is attached to the opening 4 by means of an annular seal ring 14.
  • a lead wire hole 7 for receiving current supplying lead wires 6 extends through the peripheral part of the bottom portion 2a of the casing 2.
  • the hot plate 3 of the present embodiment which is formed from a ceramic substrate 9, is used to dry a silicon wafer W1, to which a photosensitive resin is applied, at 50°C to 800°C or to perform heating during sputtering.
  • a ceramic nitride substrate or a ceramic carbide substrate be selected as the ceramic substrate 9 since they have superior heat resistance and high thermal conductivity properties. More specifically, it is preferred that an aluminum nitride substrate, a silicon nitride substrate, a boron nitride substrate, a titanium nitride substrate, a silicon carbide substrate, a boron carbide substrate, or a titanium carbide substrate be selected. Among these substrates, it is most preferred that the aluminum nitride substrate be selected and next preferred that the silicon nitride substrate be selected. This is because these substrates have the highest thermal conductivity among the above ceramic nitrides.
  • the ceramic substrate 9 is disk-like, has a thickness of about 1mm to 100mm, and has a diameter that is slightly smaller than the outer dimension of the casing 2.
  • a wiring resistor 10 which serves as a conductive pattern layer, is formed in a concentric or spiral manner on the lower surface of the plate-like substrate 9.
  • Pads 10a are formed on an end of the wiring resistor 10.
  • the wiring resistor 10 and the pads 10a are formed by printing, heating, and bonding a conductive paste (noble metal paste) P1 on the surface of the ceramic substrate 9.
  • the surface for heating the silicon wafer W1 is located on the opposite side of the conductive pattern layer formation layer, or on the upper surface.
  • Such structure has an advantage in that a difference in temperature between locations does not occur in the hot plate 3 and in that the silicon wafer W1 is uniformly heated.
  • the wiring resistor 10 and the pads 10a of the present embodiment that are formed from the noble metal paste P1 includes noble metal grains as a main component and glass frit, or the like, as a secondary component. It is preferred that the noble metal grains used in the present embodiment have an average grain diameter of 6 ⁇ m or less and be flake-like.
  • the flake-like noble metal grains be selected from one of gold grains (Au grains), silver grains (Ag grains), platinum grains (Pt grains), and palladium grains (Pd grains). These noble metals relatively resist oxidation even if they are exposed to high temperatures and have a sufficiently large resistance when energized and heated.
  • a terminal pin 12 which is made of a conductive material, is soldered to each pad 10a. This electrically connects each terminal pin 12 to the wiring resistor 10. Sockets 6a, which are located on the distal end of the lead wires 6, are fit into the distal ends of the terminal pins 12. Accordingly, the temperature of the wiring resistor 10 increases and heats the entire hot plate 3 when current is supplied to the wiring resistor 10 via the lead wires 6 and the terminal pins 12.
  • a sintering-aid agent such as yttria, and a binder are added as required to ceramic grains to prepare a mixture.
  • the mixture is uniformly kneaded into, for example, three rolls.
  • the kneaded material is used to press mold plate-like molding products having a thickness of 1 to 100mm.
  • the molded product is dried. Then, the molded product undergoes provisional baking and main baking so that it is completely sintered. This forms the ceramic sinter substrate 9. It is preferred that the baking process be performed in a hot-press apparatus and that the baking process be performed at a temperature of about 1500°C to 2000°C. Afterward, the ceramic substrate 9 is cut into a disk-like shape having a predetermined diameter (in the present embodiment, 230mm ⁇ ) and undergoes surface grinding, preferably with a hub grinder.
  • a predetermined diameter in the present embodiment, 230mm ⁇
  • the noble metal paste P1 which has been prepared beforehand, is uniformly applied to the lower surface of the ceramic substrate 9, preferably through screen-printing.
  • the noble metal paste P1 used here includes ruthenium oxide, glass frit, a resin binder, and a solvent.
  • the noble metal paste P1 may also include bismuth or bismuth oxide.
  • the amount of noble metal grains is too large, an increase in the ratio of the conductive components in the wiring resistor 10 may decrease the specific resistance.
  • the amount of noble metal grains is too small, although the specific resistance increases in a preferable manner, the amount of glass frit relatively increases. Thus, the expansion is apt to occur.
  • the wiring resistor 10 is also apt to expand when the amount of glass frit is too large. On the other hand, if the amount of glass frit is too small, the expansion rarely occurs but it becomes difficult to increase adhesion.
  • bismuth (Bi) or bismuth oxide (Bi 2 O 3 ) be included in the noble metal paste P1.
  • test results have shown that by adding these substances, expansion is suppressed even if the application amount of the added glass frit is large (10% or greater relative to the noble metal). Further, adhesion of the wiring resistor 10 is improved.
  • bismuth oxide reacts with the aluminum nitride when the paste is bonded and produces alumina and nitrogen gas.
  • the bismuth oxide functions as an oxidization agent of the aluminum nitride. Further, when exposed to air, bismuth is easily oxidized into bismuth oxide.
  • bismuth oxide when selecting, for example, silicon nitride as the substrate material, bismuth oxide reacts with silicon nitride when the paste is bonded and produces silica and nitrogen gas. Thus, the bismuth oxide functions as an oxidization agent of the silicon nitride. In the same manner, bismuth may be considered as an oxidization agent of the silicon nitride.
  • the noble metal paste P1 it is preferred that about 1wt% to 10wt% of bismuth or bismuth oxide be included in the noble metal paste P1, more preferred that about 5wt% to 10wt% be included, and especially preferred that about 7wt% to 8wt% be included. If the content of bismuth or bismuth oxide is too small, the effect obtaining by adding bismuth or bismuth is insufficient. Thus, the expansion may not be prevented and the adhesion may not be significantly improved. On the other hand, if the content of bismuth and bismuth oxide is too large, the noble metal does not mix with the bismuth or the bismuth oxide and result in different resistances.
  • the noble metal paste P1 must include ruthenium oxide (RuO 2 ). It is considered that together with bismuth or bismuth oxide, ruthenium oxide appropriately suppresses reaction between the glass frit and the aluminum nitride of the ceramic substrate and prevents the generation of reaction gas.
  • RuO 2 ruthenium oxide
  • ruthenium oxide be included in the noble metal paste P1, and particularly preferred that about 1wt% to 2wt% be included.
  • the content of ruthenium oxide be less than or equal to the content of bismuth or bismuth oxide.
  • glass frit including zinc boron silicate (SiO 2 : B 2 O 3 : ZnO 2 ) be used, and especially preferred that the glass frit includes zinc boron silicate as a main component. More specifically, it is preferred that a small amount of oxide be added to the zinc boron silicate. Specific examples of oxides include aluminum oxide (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), lead oxide (PbO), cadmium oxide (CdO), chromium oxide (Cr 2 O 3 ), and copper oxide (CuO). One of these oxides or a combination of two or more of these oxides may be added to the zinc boron silicate. During the bonding of the paste, these oxides function as an oxidization agent of the substrate material and are thus reduced.
  • oxides aluminum oxide
  • Y 2 O 3 yttrium oxide
  • PbO lead oxide
  • CdO cadmium oxide
  • Cr 2 O 3 chromium oxide
  • CuO copper oxide
  • the weight ratio of each of the above listed oxides be 1/20 times to 1/5 times the weight ratio of zinc boron silicate, which serves as a base. If the weight ratio is too small, the percentage of the above oxides in the glass frit increases. As a result, the expansion caused by nitrogen gas may not be sufficiently prevented. On the other hand, if the weight ratio is too large, the percentage of the above oxides in the glass frit decreases. As a result, the adhesion of the wiring resistor 10 may not be sufficiently increased.
  • the noble metal paste P1 also includes 2wt% to 15wt% of a resin binder, which serves as an organic vehicle, and 10wt% to 30wt% of a solvent.
  • a resin binder which serves as an organic vehicle
  • 10wt% to 30wt% of a solvent examples of the resin binder are, for example, the cellulose group such as ethyl cellulose.
  • the solvent is a component added to improve the printing and dispersion characteristics. Specific examples of the solvent are the acetate group, the cellosolve group such as butyl cellosolve, or the Carbitol group such as butyl Carbitol. One or a combination of two or more of these solvents may be used.
  • the solvent in the noble metal paste P1 volatilizes and bonds the wiring resistor 10 and the pads 10a to the ceramic substrate 9.
  • Fused glass frit has a tendency to move toward the ceramic substrate 9.
  • the noble metal grains have a tendency to move away from the ceramic substrate 9.
  • the pads 10a are connected to the terminal pins by a solder S1 to complete the hot plate 3.
  • the hot plate 3 is attached to the opening 4 of the casing 2 to complete the desired hot plate unit 1 of Fig. 1.
  • examples 1 to 5 and comparative examples 1 to 3 4 parts by weight of Y 2 O 3 (average grain diameter 0.4 ⁇ m) and 8 parts by weight of an acrylic resin binder (manufactured by Mitsui Chemicals, product name: SA-545, acid number 1.0) were added to 100 parts by weight of aluminum nitride powder (average grain diameter 1.1 ⁇ m) and mixed. The mixture produced in this manner was uniformly kneaded. The kneaded product was put into a press mold and pressed to form a plate-like molded product.
  • an acrylic resin binder manufactured by Mitsui Chemicals, product name: SA-545, acid number 1.0
  • the molded product was degreased for four hours at a temperature of 350°C for four hours to thermally decompose the binder. Further, the degreased molded body was baked in a hot-press for three hours at a temperature of 1600°C to produce the aluminum nitride substrate, or the ceramic substrate 9. The pressure of the hot press was 150kg/cm 2 .
  • a paste applying process was performed.
  • the noble metal paste P1 the composition of which is described below, was used and applied to a thickness of about 25 ⁇ m. Eight types of samples were prepared in accordance with the above procedure (refer to table 1).
  • noble metal grains Only one type of noble metal grains, that is, silver grains, which were flake-like and had an average grain diameter of 5 ⁇ m, was used.
  • the added amount of the silver grains in the silver paste, which served as the noble metal paste P1 was 45wt% in sample 5, 50wt% in samples 2, 4, and 7, 55wt% in samples 1, 3, and 6, and 70wt% in sample 8.
  • the glass frit included zinc boron silicate as a base (i.e., a zinc-containing material was used as the glass frit).
  • the amount of glass frit added in each sample is shown in table 1, and the specific composition of each sample is shown in the lower rows of table 1.
  • the amount of bismuth and ruthenium oxide that was added in each sample is as shown in table 1.
  • Ethyl cellulose was selected as the binder, and butyl Carbitol was selected as the solvent.
  • samples 6 to 8 correspond to comparative examples 1 to 3.
  • the paste was printed to and bonded on the ceramic substrate 9, and two square millimeter test patterns were formed at multiple locations.
  • the expansion of the test patterns was confirmed through observation with the naked eye and with an optical microscope.
  • a tensile strength test was performed on test patterns that did not expand, and the average value of the measured values (kgf/2mm ⁇ ) was calculated.
  • the resistance was measured with a Multimeter, and the specific resistance ( ⁇ ⁇ cm) of the patterns was calculated from the measured length and the cross-sectional area of the patterns.
  • the target value of the specific resistance was 10 ⁇ cm.
  • the mixture obtained in this manner was uniformly kneaded.
  • the kneaded product was put into a press mold and pressed to form a plate-like molded product.
  • the molded product was degreased for four hours at a temperature of 350°C for four hours in a nitrogen atmosphere to thermally decompose the binder. Further, the degreased molded body was baked in a hot-press for three hours at a temperature of 1600°C to produce a silicon nitride substrate, or the ceramic substrate 9. The pressure of the hot press was 150kg/cm 2 .
  • a paste applying process was performed.
  • the noble metal paste P1 the composition of which is described below, was used and applied to a thickness of about 25 ⁇ m.
  • Bismuth oxide was used instead of bismuth.
  • the applied noble metal paste P1 was heated at a temperature of about 750°C for a predetermined time to bond the wiring resistor 10 and the pads 10a and complete sample 9, which corresponds to the hot plate 3 of example 6.
  • Spherical noble metal grains may be used in lieu of the flake-like noble metal grains. Further, instead of using only one type of the noble metal grains, two or more types of noble metal grains (e.g., flake-like grains and spherical grains) may be mixed and used.
  • the oxide included in the glass frit, the base of which is zinc boron silicate, is not limited to Al 2 O 3 , which is used in the examples of the above embodiment, and may, of course, be changed.
  • the ceramic substrate 9 is not limited to products manufactured through a press molding and may be manufactured, for example, by performing sheet molding with a doctor blade apparatus.
  • the wiring resistor 10 may, for example, be arranged between superimposed sheets.
  • the high temperature hot plate 3 is manufactured in a relatively simple manner.
  • the conductive pattern layer is not limited to the wiring resistor 10 and the pads 10a used in the above embodiment and may be other structures.
  • the noble metal paste P1 need not be screen printed on the ceramic substrate 9.
  • the noble metal paste P1 may be stamped on the ceramic substrate 9.
EP20000922933 1999-05-07 2000-05-01 Heizplatte und leitfähige paste Withdrawn EP1185143A4 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP12697399 1999-05-07
JP12697399 1999-05-07
JP32306199 1999-11-12
JP32306199 1999-11-12
JP2000126786A JP2001203066A (ja) 1999-05-07 2000-04-27 ホットプレート及び導体ペースト
JP2000126786 2000-04-27
PCT/JP2000/002874 WO2000069218A1 (fr) 1999-05-07 2000-05-01 Plaque chauffante et pâte conductrice

Publications (3)

Publication Number Publication Date
EP1185143A1 EP1185143A1 (de) 2002-03-06
EP1185143A9 true EP1185143A9 (de) 2002-05-15
EP1185143A4 EP1185143A4 (de) 2005-03-07

Family

ID=27315433

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20000922933 Withdrawn EP1185143A4 (de) 1999-05-07 2000-05-01 Heizplatte und leitfähige paste

Country Status (3)

Country Link
EP (1) EP1185143A4 (de)
JP (1) JP2001203066A (de)
WO (1) WO2000069218A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266409A1 (en) * 2008-04-28 2009-10-29 E.I.Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
KR101013793B1 (ko) * 2010-08-26 2011-02-14 오길수 내열 자기용 인덕션 감응 조성물
EP3419028B1 (de) * 2016-02-17 2021-01-06 Namics Corporation Leitpaste
CN110085346B (zh) * 2019-04-30 2021-04-30 东莞珂洛赫慕电子材料科技有限公司 一种适配氮化硅基材的发热电阻浆料及其制备方法和应用

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Publication number Priority date Publication date Assignee Title
GB1278411A (en) * 1968-03-11 1972-06-21 Johnson Matthey Co Ltd Improvements in and relating to heater elements
GB1528166A (en) * 1975-09-17 1978-10-11 Shoei Chem Inc Process for manufacturing resistor compositions
JPS5714141A (en) * 1980-06-30 1982-01-25 Matsushita Electric Ind Co Ltd Container with electric heater
JPS5790593U (de) * 1980-11-22 1982-06-03
JP3145389B2 (ja) * 1990-08-05 2001-03-12 日本山村硝子株式会社 発熱体
JP3033852B2 (ja) * 1991-03-27 2000-04-17 川崎製鉄株式会社 窒化アルミニウムヒータ用抵抗体及び抵抗ペースト組成物
JP3463320B2 (ja) * 1993-06-03 2003-11-05 株式会社村田製作所 積層セラミックコンデンサ
JPH08138835A (ja) * 1994-03-28 1996-05-31 Yamamura Glass Co Ltd 発熱体組成物
JP3297531B2 (ja) * 1994-06-27 2002-07-02 京セラ株式会社 導電性ペースト
DE29721603U1 (de) * 1997-07-01 1998-01-29 Fct Systeme Der Strukturkerami Kochfeld
JPH1140440A (ja) * 1997-07-18 1999-02-12 Mitsumi Electric Co Ltd トランス

Also Published As

Publication number Publication date
EP1185143A4 (de) 2005-03-07
WO2000069218A1 (fr) 2000-11-16
EP1185143A1 (de) 2002-03-06
JP2001203066A (ja) 2001-07-27

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