EP1071123A1 - Procede de formation de film - Google Patents

Procede de formation de film Download PDF

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Publication number
EP1071123A1
EP1071123A1 EP99909290A EP99909290A EP1071123A1 EP 1071123 A1 EP1071123 A1 EP 1071123A1 EP 99909290 A EP99909290 A EP 99909290A EP 99909290 A EP99909290 A EP 99909290A EP 1071123 A1 EP1071123 A1 EP 1071123A1
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EP
European Patent Office
Prior art keywords
film
elements
gas
substrate
atomicity
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EP99909290A
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German (de)
English (en)
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EP1071123A4 (fr
EP1071123B1 (fr
EP1071123A8 (fr
Inventor
Tomo Ueno
University of Agriculture & Technology Tokyo
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Tokyo University of Agriculture and Technology NUC
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Tokyo University of Agriculture and Technology NUC
Tokyo University of Agriculture
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Publication of EP1071123A1 publication Critical patent/EP1071123A1/fr
Publication of EP1071123A8 publication Critical patent/EP1071123A8/fr
Publication of EP1071123A4 publication Critical patent/EP1071123A4/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Definitions

  • This invention relates a method for forming a film.
  • a film-forming technique plays an important part in development of a material and a device.
  • the CVD methods in which all the constituting elements of a film to be formed on a substrate are supplied from an external atmosphere or the thermal oxidizing method in which elements from an external atmosphere are reacted with constituting elements of a substrate to form a film, have been mainly used.
  • the elements from the external atmosphere are introduced into a vacuum vessel in molecularity.
  • the recent miniaturization of an elemental device restricts its film-forming process, particularly requiring to lower its processing temperature.
  • One of the factors to make higher the processing temperature is that the constituting elements from the external atmosphere are supplied in molecularity. That is, a part of atoms constituting the molecular elements to be supplied or dissociated atomicity elements from the molecular elements are essentially required in the film-forming process.
  • the conventional film-forming technique dissociates the supplied molecular elements near a heated substrate, so requiring the energy of the dissociation for the temperature of the heated substrate for. Therefore, it has its limit by itself in lowering of the film-forming process.
  • a sputtering method or a plasma CVD method in which a given plasma is employed, is suggested and practically used in a part of the film-forming process.
  • the former method etched a solid target by using a plasma energy and deposits the etched particles on a given substrate and the latter method dissociates raw material gas to be supplied and deposits the dissociated elements on a given substrate.
  • a thermal oxidizing process of a silicon substrate which is typical in the above method of reacting the elements supplied from the external atmosphere with the constituting elements of the substrate, have been widely used in the forming process of gate oxide films of MOSFETs.
  • the gate insulating films having good qualities can be easily formed by heating and holding the silicon substrate at 800°C and over under an oxidizing atmosphere (oxygen molecule-atmosphere).
  • the obtained silicon oxide film is generally called as a "thermally oxidized film".
  • the above method is descried in "J.Appl.Phys", p3770, No.
  • the silicon oxide film on the silicon substrate at a low temperature such as the sputtering method or the plasma CVD method as a directly depositing method, are made an attempt, generally, they shows extremely low boundary face-level density (Dit) which is a typical reference mark for the boundary face characteristic.
  • DI boundary face-level density
  • the reason is that the dangling bonds near the silicon substrate surface, which directly influence the Dit, remain after the silicon oxide film/silicon substrate-boundary face is formed.
  • the part of the dangling bonds may be terminated by hydrogen atoms in a CVD method, but the silicon atom/hydrogen atom-bonds are often cut easily at the ensuing process requiring a temperature of about 400°C. Accordingly, the low temperature-forming method of the silicon oxide film lacks a long-term reliability and has trouble with being applied to forming gate oxide films of LSIs.
  • the method of directly introducing elements dissociated in a plasma atmosphere from an external atmosphere and reacting the dissociated elements with the constituting atomic elements of a substrate is made an attempt to lower the processing temperature.
  • the plasma has an extreme wide energy distribution and thus, the molecules are transformed into a variety of activated species including molecular ions.
  • the thus obtained film does not have its good quality, so that the above method is almost never employed in forming the gate oxide films of MOSFETs requiring harsh conditions.
  • a silicon nitride material may be used for the gate oxide film or a passivative film which is insulating film.
  • the silicon nitride film is formed by a variety of methods as in the silicon oxide film.
  • the film is generally formed so as to have a silicon/silicon oxide/silicon nitride-boundary face.
  • the miniaturization of the MOSFETs and the lowering of the voltage of a driving power supply reach their limits, so that the conventional thermally oxidized film can not give the MOSFETs sufficient qualities.
  • the CVD method or the sputtering method not requiring the high temperature thermal treatment degrades the insulating characteristics and the boundary face-qualities because of many dangling bonds. As a result, the miniaturization of the MOSFETs can not tolerate the high temperature thermal treatment, so that the insulating film having good qualities can not be obtained.
  • the use of a wafer having a large size for developing productivity has to satisfy the uniformity of the characteristics in all the MOSFETs entirely on the wafer surface.
  • the relatively large activation energy of about 1.1 eV to oxidize the wafer surface changes the rate of reaction due to the temperature fluctuation during the heating. It means the difficulty in obtaining oxide films having their uniform thickness on the wafer.
  • the adoption of the insulating film formed at a low temperature for the gate oxide film requires to reduce its Dit value, but now, the high temperature process is required for maintaining the electric characteristic of the gate oxide film.
  • the high temperature- and large activation energy-process have been used for giving preference to the electric characteristics under the conditions of the use of a small size wafer and not proceeded microfabrication, a low temperature- and small activation energy-process is required for more miniaturization and enlarging the wafer size without the electric characteristics.
  • the molecular elements For realizing the low temperature in the film-forming process, it is conceivable to dissociate the molecular elements constituting the film in atomicity and supply the dissociated elements.
  • the molecular elements if they have their excited energy states from their ground states as their molecularity states, have their excited states maintaining their molecularity states (molecular excitation- state), their ionized states maintaining their molecularity states (molecular ionization-state) and their dissociated states perfectly in atomicity (atomicity-state).
  • an energy is supplied to the molecular elements from a plasma, they have the above states by low energy turn. Accordingly, when the molecular elements are excited to the atomicity-state, for example, they necessarily have another low energy state. Moreover, when they have large energy to be excited to the atomicity-state, they are almost never excited to the atomicity-state.
  • inert gas molecules absorb an plasma energy in advance and have their large quasi-stable level energies, thereafter, giving their energies to the molecular elements, so that the molecular elements are directly excited to a higher energy states and are easily dissociated to the atomicity elements.
  • the oxygen molecules In the case of producing atomicity oxygen elements by dissociating the oxygen molecules with a supplied energy, the oxygen molecules has the states of O 3 P, O 1 D, O 3 S and so on by low energy turn. Since the oxygen molecules at each state has different activation degree, respectively, if adopted for various oxidizing reaction, it is expected that the molecules exhibits different oxidizing velocity and mechanism. If the inert gas molecules having the various quasi-stable state energies collide with the oxygen molecules to generate a plasma, the kind of the atomicity oxygen elements to be generated in the plasma may be controlled.
  • the inert gas molecules For dissociating the molecular elements to the atomicity elements, the inert gas molecules, not the molecular elements, absorb the plasma energy, and thereby, the useless excitations of the molecular elements are suppressed.
  • the inert gas is introduced by the amount equal to or more than that of the molecular elements and thereby, the atomicity elements are effectively produced from the molecular elements.
  • molecular silicon compound elements constituting the insulating film are introduced on a substrate surface in atomicity.
  • the atomicity is carried out by the emission energies of the inert gas molecules absorbing the plasma energy higher than the energy required in the atomicity. Accordingly, the molecular elements are directly excited to the atomicity-state beyond the molecular excitation-state and the molecular ionization-state.
  • the silicon substrate is oxidized as the molecular elements are oxygen molecules and is nitrided as the molecular elements are nitrogen molecules.
  • the reactions have low activation energies, so that they are easily performed on the silicon substrate surface, not depending on the difference in their reaction temperatures on the substrate.
  • the thus obtained insulating film/silicon substrate-boundary face has little dangling bonds and low boundary face-level density and thus, the insulating film having excellent insulating characteristics can be formed on the silicon substrate. Consequently, the insulating film having excellent uniform characteristics can be formed on the silicon substrate at a low temperature.
  • Fig. 1 is a structural view of a film-forming equipment in this preferred embodiment.
  • a platinum (Pt) film containing a high concentration hydrogen elements is formed on a platinum substrate.
  • numeral "1" depicts a vacuum vessel.
  • Into the vacuum vessel 1 are introduced a mixed gas composed of hydrogen gas and helium gas through a flexible tube 2.
  • the mixed gas is excited to a plasma state in a quartz tube 4 with a microwave cavity 3.
  • the quartz tube 4 with the microwave cavity 3 may be attached at a flange 5 in the right hand of the vacuum vessel 1.
  • a spectroscope 6 attached to the opposite side to the flange 5 of the vacuum tube 1 can analyze the light emission in the plasma.
  • a platinum plate as a substrate 7 is set and fixed onto a heating holder 8 in the vacuum vessel 1.
  • the interior of the vacuum vessel 1 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Then, by heating the heating holder 1, the substrate 7 is heated to 300°C.
  • the mixed gas of the helium gas and the hydrogen gas is introduced into the vacuum vessel 1 through the quartz tube 4 to a pressure of 1 Torr.
  • the mix ratio of the helium gas and the hydrogen gas is 1:1.
  • the microwave of 2.45 GHz and 100 W is introduced into the quartz tube 4 through the microwave cavity 3.
  • the thus generated atomicity hydrogen elements are supplied to the platinum substrate to form a platinum film containing a high concentration hydrogen elements on the platinum substrate.
  • Fig. 2 is a view explaining the process in which the plasma energy is consumed for the atomicity of the hydrogen molecular elements.
  • the excited level of the helium gaseous molecule is higher than the ground level thereof by 19.82 eV.
  • the hydrogen molecular elements get the energy of about 19 eV to dissociate themselves in their atomicity-elements.
  • the dissociated atomicity hydrogen elements having their excited states emit vacuum ultraviolet rays of 121.6 nm to be atomicity hydrogen elements having their ground states.
  • the hydrogen molecular elements get the energies from the excited helium gas molecules to dissociate themselves into atomicity hydrogen elements.
  • the plasma has only hydrogen molecular elements, the elements are directly excited and the atomicity hydrogen elements are almost never generated.
  • Fig. 3 shows the state in which the atomicity hydrogen elements are effectively generated from the plasma of the mixed gas of the helium gas and the hydrogen gas.
  • the emission spectra are measured by the spectroscope 6.
  • the emission spectrum has a large peak at a wavelength of 121.6 nm and a small peak around a wavelength of 160 nm which exhibits the molecular state-excitation of the hydrogen molecular element.
  • a film made of a SiOF low dielectric constant material is formed for passivating aluminum (Al) wires on an insulating film.
  • numeral "9" designates a vacuum vessel.
  • Plasma-generating apparatuses 10, 11, and 12 are attached to the vacuum vessel 9, each apparatus having a flexible tube 2, a microwave cavity 3 and a quartz tube 4 which are combined.
  • a spectroscope 13, a substrate 14 and a heating holder 15 are provided.
  • the vacuum vessel 9 is evacuated to a pressure of 1 ⁇ 10 -4 Torr and below by a pump 100. And by heating the heating holder 15 to 200°C, the substrate 14 is heated. The substrate has exposed aluminum wires by patterning an insulating film over the wires.
  • a mixed gas of silane (SiH 4 ) gas and argon (Ar) gas, a mixed gas of oxygen (O 2 ) gas and xenon (Xe) gas and a mixed gas of fluorine (F 2 ) gas and krypton (Kr) gas are introduced into the plasma-generating apparatuses 10, 11 and 12, respectively.
  • the microwaves of 2.45 MHz and 100 W are introduced into the plasma-generating apparatuses to generate plasmas composed of the above mixed gases therein.
  • the thus obtained atomicity silicon elements, atomicity oxygen elements and atomicity fluorine elements are supplied onto the substrate to form a SiOF film having a low dielectric constant.
  • the composition of the SiOF film can be controlled by adjusting the ratio of the above atomicity elements.
  • Fig. 5 is a film-forming equipment for the ferroelectric film in this embodiment.
  • a film made of Pb(Zr,Ti)O 3 ferroelectric oxide is formed on an underfilm composed of a platinum/magnesium oxide (MgO) stacking structure.
  • MgO platinum/magnesium oxide
  • numeral "16" designates vacuum vessel
  • numeral "17” designates plasma-generating apparatus.
  • the similar parts in Fig. 5 to ones in Fig. 1 are designated by the same numerals.
  • a substrate 18 having the platinum/magnesium oxide stacking structure is set onto a heating holder 19 in the vacuum vessel 16.
  • three gas inlets 20 are provided in the side of the vacuum vessel 16.
  • the interior of the vacuum vessel 16 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Under the vacuum condition, by heating the heating holder 19, the substrate 18 is heated to 450°C.
  • the vacuum vessel 1 from the gas inlets 20 are introduced tetraethyl lead (TEL:Pb(C 2 H 5 ) 4 ) gas, zirconium tetratertiarybutoxide (BOZ:Zr(t-OC 4 H 9 ) 4 ) gas and titanium tetraisopropoxide (POT:Ti(i-OC 3 H 7 ) 4 ) gas, as raw material gases.
  • a mixed gas of neon (Ne) gas and oxygen gas are introduced into the vacuum vessel 16 through the plasma-generating apparatus 17.
  • the atomicity oxygen elements generated from the plasma composed of the mixed gas and the above raw material gases are reacted in the vacuum vessel 16 to form a Pb(Zr,Ti)O 3 film on the substrate 18.
  • the plasma composed of the mixed gas improves the oxidization of the film.
  • Fig. 6 shows a film-forming equipment in this embodiment.
  • a film made of gallium nitride (GaN) is formed on a substrate made of sapphire (Al 2 O 3 ).
  • numeral "21" designates a vacuum vessel and numeral "22" designates a plasma-generating apparatus.
  • the similar parts in Fig. 6 to ones in Fig. 1 are designated by the same numerals.
  • the Al 2 O 3 substrate 23 is set onto a heating holder 24 in the vacuum vessel 21.
  • a gas inlet 25 is provided on the vacuum vessel 21.
  • the interior of the vacuum vessel 21 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Under the vacuum condition, the Al 2 O 3 substrate 23 is heated through heating the heating holder 24. Then, gallium gas as a raw material gas is introduced from the gas inlet 25. Nitrogen gas as the other raw material gas is mixed with helium gas and the nitrogen molecular elements are excited into atomicity nitrogen elements in the plasma-generating apparatus 22 with the microwave of 2.45 MHz and 100 W. By using the atomicity nitrogen elements generated from the nitrogen molecular elements (which are almost never dissociated), the GaN film and a buffer layer for the film can be formed at a lower temperature than in the past.
  • an amorphous semiconductor film according to the present invention will be explained.
  • the same film-forming equipment as the one in the first embodiment is used.
  • an amorphous silicon film for a solar battery is formed on a transparent electrode film formed on a glass substrate.
  • the substrate 7 in Fig. 1 is composed of the glass substrate and the transparent electrode film.
  • the interior of the vacuum vessel 1 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Under the vacuum condition, by heating the heating holder 8, the substrate 7 having the transparent electrode film/glass substrate stacking structure is heated to 300°C. Silane gas as a raw material gas is diluted with argon gas by five times amount of the silane gas, and is introduced into the vacuum vessel 1 through the quartz tube 4 to a pressure of 1 Torr. The microwave of 2.45 MHz and 100 W is introduced into the quartz tube 4 through the microwave cavity 3 to generate the plasma composed of the silane gas and the argon gas.
  • the argon gaseous molecules absorb almost the plasma energy and thereby, the silane gaseous molecules get the energies (11.6 eV) from the excited state-argon gaseous molecules. Consequently, the silane gaseous molecules are dissociated into the atomicity silicon elements and thereby, the amorphous silicon film having good qualities is formed.
  • Fig. 7 shows a film-forming equipment in this embodiment.
  • a film made of silicon oxide (SiO 2 ) is formed for passivating aluminum wires formed on an insulating film.
  • numeral "26" designates a vacuum vessel and numerals "27" and "28” designate plasma-generating apparatuses.
  • the similar parts in Fig. 7 to ones in Fig. 1 are designated by the same numerals.
  • a substrate 29 composed of the insulating film and the patterned aluminum wiring structure formed on the insulating film is set onto a heating holder 30 installed in the vacuum vessel 26.
  • the interior of the vacuum vessel 26 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Under the vacuum condition, by heating the heating holder 30, the substrate 29 is heated to 300°C. Then, silane gas is diluted with argon gas by five times amount of the silane gas, and the plasma composed of the silane gas and the argon gas is generated in the plasma-generating apparatus 27. Consequently, as in the fifth embodiment, the silane gaseous molecules are dissociated into the atomicity silicon elements, which are introduced into the vacuum vessel 26. In the same way, oxygen gas is diluted with the krypton gas by the twenty time amount of the oxygen gas and the thus obtained mixed gas is introduced into the plasma-generating apparatus 28.
  • the atomicity oxygen elements are generated from the oxygen molecular elements and thereby, the SiO 2 film is formed on the substrate 29.
  • the pressure in the vacuum vessel was 1 Torr.
  • the plasma composed of the mixed gas of helium gas:hydrogen gas 25:1, that is, having a larger amount of helium gas than hydrogen gas, exhibits an extremely large peak at a wavelength of 121.6 nm and extremely small peak around a wavelength of 160 nm.
  • the dissociating method in this embodiment can be adopted for the first through fourth embodiments, so the oxygen molecular elements, the fluorine molecular elements and the nitrogen molecular elements can be effectively dissociated onto their atomicity elements.
  • the method for forming a P-doped silicon area will be explained.
  • the same equipment as the one in the first embodiment is used.
  • a silicon substrate having a patterned insulating film with openings in a source area and a drain area is employed as the substrate 7 in the first embodiment.
  • the interior of the vacuum vessel 1 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100.
  • the substrate 7 is heated to 500°C.
  • P 2 O 5 gas as a P-containing raw material gas is mixed with helium gas and the mixed gas is introduced into the vacuum vessel 1 through the quartz tube 4.
  • the microwave of 2.45 GHz and 100 W is introduced into the quartz tube 4 through the microwave cavity 3 to generate the plasma composed of the mixed gas of P 2 O 5 gas and helium gas.
  • the helium gaseous molecules absorb almost the energies from the plasma and give the P 2 O 5 molecular elements their excited energies.
  • the P 2 O 5 molecular elements are almost dissociated into their atomicity elements and thereby, the P-doped silicon area is formed at the openings of the substrate.
  • a boron (B) doped silicon area can be formed by using a mixed gas of B 2 O 3 gas and neon gas instead of the above mixed gas.
  • the substrate 30 is made of silicon material.
  • the interior of the vacuum vessel 26 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100. Under the vacuum condition, by heating the heating holder 30, the substrate 29 is heated to 500°C. Then, B 2 O 3 gas as a B-containing raw material gas is mixed to neon gas and the mixed gas is introduced into the plasma-generating apparatus 27. Into the plasma-generating apparatus 28 is introduced a mixed gas of argon gas and silane gas. Thereafter, the atomicity boron elements and the atomicity silicon elements are generated from the mixed gases, respectively, and thus, the boron-doped silicon film is formed on the silicon substrate.
  • the forming method of a gate oxide film will be explained.
  • the same film-forming equipment as the one in the first embodiment is used.
  • the substrate 7 is composed of the isolated silicon substrate shown in Fig. 10.
  • the interior of the vacuum vessel 1 is evacuated to a pressure of 1 ⁇ 10 -5 Torr and below by a pump 100.
  • the isolated silicon substrate 7 is heated to 500°C.
  • argon gas and oxygen gas are introduced into the vacuum vessel 1 through the quartz tube 4 to a pressure of 1 Torr.
  • the microwave of 2.45 GHz and 100 W is introduced into the quartz tube 4 through the microwave cavity 3 to generate the plasma composed of the mixed gas of the argon gas and the oxygen gas.
  • the silicon substrate is oxidized at an oxidizing speed nearly equal to the one in the conventional 800°C-thermal oxidizing method using oxygen molecular elements.
  • the film-forming method of oxidizing a silicon substrate using krypton elements and oxygen elements will be explained.
  • the same film-forming equipment as the one in the first embodiment is used.
  • the isolated silicon substrate shown in Fig. 10 is employed as the substrate 7 as in the tenth embodiment.
  • the thus obtained SiO 2 /Si boundary face has a boundary face-level density of 3 ⁇ 10 11 /cm 2 ⁇ eV at Dit (mid gap).
  • the activation energy of the oxidizing reaction which is an index of the diffusion rate controlling in the oxidizing reaction, is measured by varying the substrate temperature to 600°C from 300°C, it turns out to be about 0.14 eV. It means that the change of the oxidizing velocity to the change of the substrate temperature is extremely small.
  • the substrate temperature of 400°C gives the SiO 2 /Si boundary face a boundary face-level density of 5 ⁇ 10 11 /cm 2 ⁇ eV at Dit (mid gap).
  • the film-forming method of oxidizing a silicon substrate using xenon elements and oxygen elements will be explained.
  • the same film-forming equipment as the one in the first embodiment is used.
  • the isolated silicon substrate shown in Fig. 10 is employed as the substrate 7 as in the tenth embodiment.
  • the film-forming method of nitriding a silicon substrate using helium elements and nitrogen elements will be explained.
  • the same film-forming equipment as the one in the first embodiment is used.
  • the isolated silicon substrate shown in Fig. 10 is employed as the substrate 7 as in the tenth embodiment.
  • the forming method for forming an oxynitride film (SiON film) will be described.
  • the same film-forming equipment as the one in the sixth embodiment is used.
  • the isolated silicon substrate shown in Fig. 10 is employed as the substrate 7 as in the tenth embodiment.
  • the molecules each composed of plural atoms, can be effectively dissociated into their atomicity elements, the low temperature film-forming process, using the molecules, can be realized.

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Cited By (9)

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Publication number Priority date Publication date Assignee Title
WO2001069665A1 (fr) 2000-03-13 2001-09-20 Tadahiro Ohmi Procede de formation de pellicule dielectrique
EP1265276A4 (fr) * 2000-03-13 2005-07-13 Tadahiro Ohmi Procede de formation de pellicule dielectrique
EP1347507A1 (fr) * 2000-12-28 2003-09-24 OHMI, Tadahiro Film di lectrique et proc d de formation, dispositif semi-conducteurs, dispositif de m moire non volatile semi-conducteurs, et proc d de production pour dispositif semi-conducteurs
EP1347507A4 (fr) * 2000-12-28 2005-09-07 Tadahiro Ohmi Film di lectrique et proc d de formation, dispositif semi-conducteurs, dispositif de m moire non volatile semi-conducteurs, et proc d de production pour dispositif semi-conducteurs
US7439121B2 (en) 2000-12-28 2008-10-21 Tadahiro Ohmi Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device
US7718484B2 (en) 2000-12-28 2010-05-18 Foundation For Advancement Of International Science Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film
EP1453083A1 (fr) * 2001-12-07 2004-09-01 Tokyo Electron Limited Procede de nitruration de film isolant, dispositif a semi-conducteur et son procede de production et dispositif et procede de traitement de surface
EP1453083A4 (fr) * 2001-12-07 2007-01-10 Tokyo Electron Ltd Procede de nitruration de film isolant, dispositif a semi-conducteur et son procede de production et dispositif et procede de traitement de surface
TWI423461B (zh) * 2008-09-18 2014-01-11 Atomic Energy Council 微晶矽薄膜鍍膜之生成方法及其生成裝置

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KR100441836B1 (ko) 2004-07-27
EP1071123A4 (fr) 2004-11-24
US6746726B2 (en) 2004-06-08
WO1999050899A1 (fr) 1999-10-07
AU748409B2 (en) 2002-06-06
CN1146025C (zh) 2004-04-14
JPH11279773A (ja) 1999-10-12
EP1071123B1 (fr) 2007-01-03
DE69934680D1 (de) 2007-02-15
AU2854699A (en) 1999-10-18
CA2326052A1 (fr) 1999-10-07
CN1299517A (zh) 2001-06-13
US20030003243A1 (en) 2003-01-02
EP1071123A8 (fr) 2001-05-02
KR20010042227A (ko) 2001-05-25

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