EP1071123A8 - Procede de formation de film - Google Patents

Procede de formation de film Download PDF

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Publication number
EP1071123A8
EP1071123A8 EP99909290A EP99909290A EP1071123A8 EP 1071123 A8 EP1071123 A8 EP 1071123A8 EP 99909290 A EP99909290 A EP 99909290A EP 99909290 A EP99909290 A EP 99909290A EP 1071123 A8 EP1071123 A8 EP 1071123A8
Authority
EP
European Patent Office
Prior art keywords
gaseous molecules
substrate
onto
film
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99909290A
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German (de)
English (en)
Other versions
EP1071123A4 (fr
EP1071123B1 (fr
EP1071123A1 (fr
Inventor
Tomo Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo University of Agriculture and Technology NUC
Original Assignee
Tokyo University of Agriculture and Technology NUC
Tokyo University of Agriculture
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Publication date
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Publication of EP1071123A1 publication Critical patent/EP1071123A1/fr
Publication of EP1071123A8 publication Critical patent/EP1071123A8/fr
Publication of EP1071123A4 publication Critical patent/EP1071123A4/fr
Application granted granted Critical
Publication of EP1071123B1 publication Critical patent/EP1071123B1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
EP99909290A 1998-03-27 1999-03-23 Procede de formation de film Expired - Lifetime EP1071123B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10122661A JPH11279773A (ja) 1998-03-27 1998-03-27 成膜方法
JP12266198 1998-03-27
PCT/JP1999/001429 WO1999050899A1 (fr) 1998-03-27 1999-03-23 Procede de formation de film

Publications (4)

Publication Number Publication Date
EP1071123A1 EP1071123A1 (fr) 2001-01-24
EP1071123A8 true EP1071123A8 (fr) 2001-05-02
EP1071123A4 EP1071123A4 (fr) 2004-11-24
EP1071123B1 EP1071123B1 (fr) 2007-01-03

Family

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EP99909290A Expired - Lifetime EP1071123B1 (fr) 1998-03-27 1999-03-23 Procede de formation de film

Country Status (9)

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US (1) US6746726B2 (fr)
EP (1) EP1071123B1 (fr)
JP (1) JPH11279773A (fr)
KR (1) KR100441836B1 (fr)
CN (1) CN1146025C (fr)
AU (1) AU748409B2 (fr)
CA (1) CA2326052A1 (fr)
DE (1) DE69934680D1 (fr)
WO (1) WO1999050899A1 (fr)

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ATE514181T1 (de) 2000-03-13 2011-07-15 Tadahiro Ohmi Verfahren zur ausbildung eines dielektrischen films
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
JP3916565B2 (ja) * 2001-01-22 2007-05-16 東京エレクトロン株式会社 電子デバイス材料の製造方法
WO2003049173A1 (fr) * 2001-12-07 2003-06-12 Tokyo Electron Limited Procede de nitruration de film isolant, dispositif a semi-conducteur et son procede de production et dispositif et procede de traitement de surface
KR20030077436A (ko) 2002-03-26 2003-10-01 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 반도체 제조 장치
JP2003293128A (ja) * 2002-04-05 2003-10-15 Canon Inc 堆積膜形成方法
US7494904B2 (en) * 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7614111B2 (en) * 2002-08-09 2009-11-10 Colgate-Palmolive Company Oral care implement
WO2004025744A1 (fr) * 2002-09-13 2004-03-25 Fujitsu Limited Element sensible au magnetisme et procede de production correspondant, tete magnetique, codeur et unite de stockage magnetique utilisant un tel element
US20040099283A1 (en) * 2002-11-26 2004-05-27 Axcelis Technologies, Inc. Drying process for low-k dielectric films
JP2004343031A (ja) * 2002-12-03 2004-12-02 Advanced Lcd Technologies Development Center Co Ltd 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
US7968470B2 (en) * 2005-06-08 2011-06-28 Tohoku University Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus
JP2007141993A (ja) * 2005-11-16 2007-06-07 Tokyo Gas Co Ltd 被膜形成装置および被膜形成方法
TWI423461B (zh) * 2008-09-18 2014-01-11 Atomic Energy Council 微晶矽薄膜鍍膜之生成方法及其生成裝置
CA2753619C (fr) 2009-03-03 2016-05-17 The University Of Western Ontario Procede de production d'hydrogene moleculaire hyperthermal et d'utilisation de cet hydrogene pour rompre selectivement des liaisons c-h et/ou si-h aux surfaces de substrats
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Also Published As

Publication number Publication date
KR100441836B1 (ko) 2004-07-27
EP1071123A4 (fr) 2004-11-24
US6746726B2 (en) 2004-06-08
WO1999050899A1 (fr) 1999-10-07
AU748409B2 (en) 2002-06-06
CN1146025C (zh) 2004-04-14
JPH11279773A (ja) 1999-10-12
EP1071123B1 (fr) 2007-01-03
DE69934680D1 (de) 2007-02-15
AU2854699A (en) 1999-10-18
CA2326052A1 (fr) 1999-10-07
CN1299517A (zh) 2001-06-13
US20030003243A1 (en) 2003-01-02
EP1071123A1 (fr) 2001-01-24
KR20010042227A (ko) 2001-05-25

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