EP0989460B1 - Pattern forming method - Google Patents

Pattern forming method Download PDF

Info

Publication number
EP0989460B1
EP0989460B1 EP99912104A EP99912104A EP0989460B1 EP 0989460 B1 EP0989460 B1 EP 0989460B1 EP 99912104 A EP99912104 A EP 99912104A EP 99912104 A EP99912104 A EP 99912104A EP 0989460 B1 EP0989460 B1 EP 0989460B1
Authority
EP
European Patent Office
Prior art keywords
pattern
sensitive material
radiation sensitive
reflective coating
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP99912104A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0989460A4 (en
EP0989460A1 (en
Inventor
Koji Matsushita Electronics Corp. SHIMOMURA
Yoshiaki Clariant KINOSHITA (Japan) K.K.
Yuko Berunina Nibankan 203 YAMAGUCHI
Satoru Clariant FUNATO (Japan) K.K.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of EP0989460A1 publication Critical patent/EP0989460A1/en
Publication of EP0989460A4 publication Critical patent/EP0989460A4/en
Application granted granted Critical
Publication of EP0989460B1 publication Critical patent/EP0989460B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Definitions

  • This invention relates to a method of forming a pattern and, more particularly, it relates to a method of forming a pattern composed of an etchable layer by conducting dry etching of an etchable layer formed on a substrate for semiconductor through a mask of patterned radiation sensitive material coating formed on the etchable layer, with an anti-reflective coating composed of an organic material being intervened therebetween.
  • an anti-reflective coating 3 composed of an organic material and capable of absorbing energy beams is formed on an etchable layer 2 deposited on a semiconductor substrate 1, and a radiation sensitive material coating is further formed on said anti-reflective coating 3. Then, the radiation sensitive material coating is exposed with energy beam through a mask, and exposed or non-exposed areas of the radiation sensitive material coating are removed with a developer to thereby form a patterned radiation sensitive material coating 4 composed of the non-exposed or exposed areas thereof.
  • the anti-reflective coating 3 is dry-etched using the patterned radiation sensitive material coating 4 as a mask to remove those areas of the anti-reflective coating 3 which correspond to the openings of the patterned radiation sensitive material coating 4.
  • the etchable layer 2 is dry-etched using the patterned radiation sensitive material coating 4 as a mask, followed by removing the anti-reflective coating 3 and the radiation sensitive material coating 4 to obtain a pattern 2A composed of the etchable layer 2 on the semiconductor substrate 1, as shown in Fig. 3(b) .
  • the thus formed anti-reflective coating 3 absorbs energy beam having traveled through the radiation sensitive material coating 4 and thus serves to prevent non-uniform reflection even in the presence of stepped areas on the semiconductor substrate 1 or the etchable layer 2 and prevent exposure of areas not intended to be exposed, thus the etchable layer having the pattern 2A with good dimensional accuracy being formed.
  • reaction products 5 are formed in the interface between the anti-reflective coating 3 and the radiation sensitive material coating 4.
  • reaction products 5 can not be removed but remain on the etchable layer 2. If the etchable layer 2 is dry-etched with the reaction products remaining, the reaction products 5 act as an etching mask, and there arises the problem that, as is shown in Fig.
  • residues 6 of the etchable layer 2 are formed in those areas which are intended to be etched away (space areas) or that side walls 2a of the etchable layer 2 which are demanded to be vertical have a non-uniform profile.
  • the residues 6 will be equally formed regardless of the pattern opening ratio of the radiation sensitive material coating 4, that is, regardless of density of the pattern. Therefore, residues 6 can be formed in a space between patterns in an area crowded with patterns.
  • a method for removing the reaction products 5 formed in the interface between this anti-reflective coating 3 and the radiation sensitive material coating 4 it may be considered to conduct dry etching under the condition for removing the reaction product.
  • a method of removing the reaction product 5 together with the anti-reflective coating 3 by dry etching is not effective as a method of forming a pattern in the etchable layer because of the following reason. That is, removal of the reaction products 5 requires stronger etching conditions than in the case of removing the anti-reflective coating 3.
  • the patterned radiation sensitive material coating 4 having about the same etching properties will be simultaneously etched away, thus resist pattern with good dimensional accuracy not remaining.
  • the patterned radiation sensitive material coating 4 can not function as a mask.
  • dry etching of the anti-reflective coating 3 is conducted under such condition that etching of the patterned radiation sensitive material coating 4 is minimized, reaction products 5 and the anti-reflective coating 3 will be remained a lot on the etchable layer 2.
  • a dry etching process involving formation of a deposit on the side wall of anti-reflective coating 3 so as to improve dimension-controlling properties for the anti-reflective coating 3 would be liable to cause adhesion of the deposit coming off from the side wall of the anti-reflective coating 3 onto the etchable layer 2, and the deposit would in turn function as a mask to form residues 6 composed of the etchable layer.
  • Fig.4 is an enlarged view of the area surrounded by one-dot chain line in Fig.3(b) .
  • gate electrodes 7 composed of polysilicon layer, i.e., the etchable layer, are formed on semiconductor substrate 1, and residues 6 of polysilicon layer remain in the region between the gate electrodes 7 on the semiconductor substrate 1, i.e., source drain region.
  • Side walls 8 of an insulating material such as Si 3 N 4 , TEOS or HTO are formed on the side of gate electrodes 7.
  • surfaces of the gate electrodes 7 and the source drain areas are silicidated with TiSi 2 or the like to form a silicide layer 9 covering the surfaces.
  • gate electrodes 7 are partly bared from the side wall 8.
  • the silicide layer 9 is formed both on the bared area of the gate electrodes 7 and on the surface of polisilicon residues 6.
  • the gate electrodes 7 and the source drain areas are electrically connected to each other through the silicide layer 9 on the surface of electrodes 7 or the silicide layer 9 on the surface of polysilicon residues 6, thus an abnormal leakage current flowing between the gate electrodes 7 and the source drain areas.
  • chemically amplified resist compositions there are at present known those which contain (a) an organic material having a substituent or substituents capable of being released in the presence of an acid and (b) a compound composed of an onium salt compound capable of generating an acid by exposure with radiation (acid generator).
  • Onium salt compounds have such a strong ability of suppressing dissolution of resist that unexposed portions of the radiation sensitive material show a smaller dissolution properties for a developer, though they generates a comparatively strong acid upon being exposed. Therefore the chemically amplified resist containing an onium salt compound can provide resist images with good dimensional accuracy and high resolution.
  • An object of the present invention is to provide a method of forming a pattern not having the above-described defects.
  • a first object of the present invention is to provide a method of forming a pattern, which prevents formation of reaction products in the interface between an anti-reflective coating and a radiation sensitive material coating in spite of the presence of the anti-reflective coating composed of organic materials between an etchable layer and a radiation sensitive material coating, thus reducing the number of residues composed of the etchable layer.
  • a second object of the present invention is to provide a method of forming a high-quality pattern of the etchable layer, which provides a resist image having good dimensional accuracy and high resolution without forming standing wave and T-top.
  • the other object of the present invention is to provide a method of forming a pattern containing a reduced number of residues composed of the etchable layer, which, even when reaction products are formed in the interface between the anti-reflective coating and the radiation sensitive material coating, removes the reaction products together with the anti-reflective coating upon etching the anti-reflective coating without adversely affecting the patterned radiation sensitive material coating.
  • JP-A 07-226396 discloses to form a pattern with a high precision by using low etching strength resist corresponding to a short wavelength region exposure light and facilitate the fine processing by a semiconductor device, whereby reflection-proof film forming layer made of organic material is formed on the upper surface of a foundation layer.
  • the reflection-proof film forming layer is subjected to a heat treatment at 250 C to a form a reflection-proof film.
  • a resist film is formed on the upper surface of the reflection-proof film and an aperture pattern is formed in the resist film by lithography using an excimer laser.
  • the reflection-proof film is subjected to anisotropic etching by using the resist film as a mask.
  • JP-A 09-298183 discloses to increase the selection ratio of the etching rate of an organic film to the etching rate of a photoresist film and improve the etching accuracy, whereby an acrylic resin film which is an organic film is formed on the surface of a semiconductor substrate and a photoresist film is formed on the acrylic resin film and patterned.
  • the acrylic resin film is subjected to dry-etching by the hydrolysis of the acrylic resin with gas containing sulfur or hydrogen.
  • the acrylic resin film By the dry-etching of the acrylic resin film with the gas containing sulfur or hydrogen, the acrylic resin is hydrolyzed by the reaction with the gas containing sulfur or hydrogen and, on the other hand, the photoresist is hardly hydrolyzed, so that the acrylic resin film can be selectively etched in comparison with the photoresist film.
  • JP-A 08-123032 discloses to provide a resist material having high transmitting property and high sensitivity for far UV rays, excellent heat resistance and adhesion property with a substrate, so that a pattern of high resolution and high accuracy can be obtained by specifying the component in the resist material, whereby the resist material contains a polymer specific copolymer-containing units based on hydroxystyrene, a photosensitive compound which produces acid when exposed to far UV rays of ⁇ 300nm wavelength or KrF excimer laser light, and a solvent which can dissolve these.
  • EP-A 0 780 732 discloses a polymer composition
  • a polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group a, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.
  • reaction products are generated in the interface between the anti-reflective coating and the radiation sensitive material coating according to the following mechanism.
  • the anti-reflective coating and the radiation sensitive material coating which are made of organic materials, generate radicals within them when the radiation sensitive material coating is exposed to light such as UV rays or deep UV rays, electron beams or X-rays, and the radicals in turn react with each other in the interface of the anti-reflective coating and the radiation sensitive material coating to produce aromatic reaction products. It has been found that, particularly when an onium type acid generator is contained in the radiation sensitive material coating, the aromatic reaction products are generated in more amount in the interface between the anti-reflective coating and the radiation sensitive material coating.
  • reaction products can be removed without adversely affecting the radiation sensitive material coating by using a sulfur-containing etching gas as a dry etching material for the anti-reflective coating, thus an etched coating pattern with a less number of residues being formed.
  • a sulfur-containing etching gas as a dry etching material for the anti-reflective coating
  • a first method of the present invention of forming a pattern comprises:
  • a second method of the present invention of forming a pattern is as described in the first method, wherein said fourth step involves a step of dry-etching the anti-reflective coating with a sulfur-containing etching gas and by using as a mask the pattern of radiation sensitive material coating to form a pattern of the anti-reflective coating and then dry-etching the etchable layer using as a mask the pattern of the radiation sensitive material coating and the anti-reflective coating to form a pattern of the etchable layer.
  • etchable layer 11 which is composed of, for example, polysilicon is deposited on a semiconductor substrate 10 composed of silicon with an etching stopper such as silicon oxide layer being interposed therebetween, then an anti-reflective coating 12 composed of organic materials and capable of absorbing energy beams such as light (e.g., UV rays or deep UV rays), electron beams or X-rays is applied on the etchable layer 11.
  • an anti-reflective coating 12 composed of organic materials and capable of absorbing energy beams such as light (e.g., UV rays or deep UV rays), electron beams or X-rays is applied on the etchable layer 11.
  • a chemically amplified resist material is applied onto this anti-reflective coating 12 to form a radiation sensitive material coating 13 and exposed with energy beam 15 such as light, electron beams or X-rays through a mask 14.
  • energy beam 15 such as light, electron beams or X-rays
  • the anti-reflective coating 12 is dry-etched through the mask of the thus patterned radiation sensitive material coating 13b to create the pattern in the anti-reflective coating 12.
  • the etchable layer 11 to be etched is dry-etched through the mask of the patterned radiation sensitive material coating to create the pattern in the etchable layer 11.
  • so-called negative-working radiation sensitive materials in which energy beam-unexposed areas are removed by dissolving with a developer may also be used in place of the so-called positive-working ones in which energy beam-exposed areas are removed by dissolving with a developer.
  • the patterned radiation sensitive material coating and the anti-reflective coating on the semiconductor substrate 10 are removed after etching the anti-reflective coating, there is obtained a pattern of the etchable layer on the semiconductor substrate 10 as is shown in Fig. 2 .
  • the surface of gate electrodes 16 composed of the etchable polysilicon layer 11 and the surface of source drain areas between the gate electrodes 16 on the semiconductor substrate 10 are silicidated with TiSi 2 or the like to form silicide layer 18 covering the surfaces.
  • side walls 17 composed of an insulating material such as Si 3 N 4 , TEOS or HTO. Since no residues remain on the source drain region and the gate electrodes 16 are not bared from side walls 17 owing to uniformity of the side profiles of the gate electrodes 16, the silicide layer 18 is not formed on the side surface of the gate electrode 16.
  • the gate electrodes 16 and the source drain regions are not electrically connected to each other through the silicide layer on the surface of the gate electrode 16 or on the surface of the residues, and no abnormal leakage occurs between the gate electrodes 16 and the source drain regions, thus deterioration of element performance being avoided.
  • the radiation sensitive material coating comprises a chemically amplified resist material containing (a) an organic compound containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation which comprise both at least one of onium salt compounds and at least one member selected from the group consisting of sulfone compounds and sulfonate compounds.
  • This chemically amplified resist material may further contain, if necessary, dissolution inhibitors, basic compounds and other conventionally known additives. In order to prepare a uniform solution of the resist material, solvents are used. These components constituting the resist material are specifically described below.
  • those resins are preferred which are made alkali-insoluble or slightly alkali-soluble (hereinafter referred to as "resins containing acid-decomposable groups") by adding substituents capable of being released in the presence of an acid (hereinafter referred to as "acid-decomposable groups”) to alkali-soluble polymers containing functional groups showing affinity for an alkali developer solution such as a phenolic hydroxyl group, a carboxyl group, etc.
  • alkali-soluble polymers for constituting the resins containing acid-decomposable groups there are illustrated vinyl polymers having the recurring unit shown by the following formula 1 or 2, phenol resins such as novolak resin, and the like.
  • examples of the polymers containing the recurring unit of the following formula 1 include poly(hydroxystyrene), poly(hydroxy- a -methylstyrene), poly(hydroxymethylstyrene), etc.
  • examples of the polymers containing the recurring unit of the formula 2 include homopolymers or copolymers of acrylic or methacrylic acid.
  • the acid-decomposable group to be added include vinyl ether compounds, dialkyl carbonates.
  • vinyl ether compounds are those compounds which are represented by the following formula 3 and, more specifically, isopropenyl methyl ether, 3,4-dihydro-2H-pyrane, butanediol-1,4-divinyl ether, ethylene glycol divinyl ether, triethylene glycol divinyl ether, etc. are preferred.
  • Specific examples of the dialkyl carbonate include di-tert-butyl carbonate, etc.
  • the alkali-soluble polymers and the acid-decomposable groups may be used independently or as a combination of two or more. wherein R 1 represents a hydrogen atom or an alkyl group, R 2 represents an alkyl group, and m is 0 or an integer of 1 to 4.
  • R 3 represents a hydrogen atom or an alkyl group.
  • C(R 4 )(R 5 ) C(R 6 )-O-R 7 (3) wherein R 4 , R 5 and R 6 each independently represents a hydrogen atom or a straight, branched, cyclic or hetero atom-containing cyclic alkyl group having 1 to 6 carbon atoms, and R 7 represents a straight, branched, cyclic or hetero atom-containing cyclic alkyl group having 1 to 10 carbon atoms or aralkyl group which may optionally be substituted by a halogen atom, an alkoxyl group, an aralkyloxycarbonyl group or an alkylcarbonylamino group.
  • onium salt compounds to be used in the present invention as acid generators any of those which are known to generate acid upon exposure to radiation may be used.
  • sulfonium salt compounds such as triphenylsulfonium methane, etc.
  • iodonium salt compounds such as diphenyliodonium trifluoromethane sulfonate etc.
  • phosphonium salt compounds diazonium salt compounds, pyridinium salt compounds, etc.
  • sulfonium salt compounds and iodonium salt compounds are preferred, with sulfonium salt compounds being particularly preferred.
  • Particularly preferred sulfonium salt compounds and iodonium salt compounds to be used in the present invention are triphenylsulfonium trifl-ate, triphenylsulfonium propionate, triphenylsulfonium hexafurate, and diphenyliodonium trifl-ate.
  • sulfone compounds there are illustrated, for example, ⁇ -ketosulfones, ⁇ -sulfonylsulfones and ⁇ -diazo compounds thereof. Disulfone compounds are also included. Specific examples of these sulfone compounds are given below:
  • particularly preferred compounds are biscyclohexylsulfonyldiazomethane, bisphenylsulfonyldiazomethane, bis(4-chlorophenylsulfonyl)-diazomethane, biscyclohexylsulfonylmethane, bisphenylsulfonylmethane, bis(4-methylphenylsulfonyl)methane, etc.
  • sulfonate compounds there are illustrated alkylsulfonates, haloalkylsulfonates, arylsulfonates, iminosulfonates, etc. Examples of the sulfonate compounds are:
  • pyrogallol trismethanesulfonate pyrogallol tristrifl-ate
  • benzoin tosylate etc. are particularly preferred.
  • Contents of the above-described onium salt compounds, sulfone compounds and sulfonate compounds in the chemically amplified resist material may be any amounts as long as the objects of the present invention can be attained.
  • the onium salt compounds, the sulfone compounds and the sulfonate compounds are used in amounts of 0.5 to 10 parts by weight, 1 to 10 parts by weight and 1 to 10 parts by weight, respectively, based on 100 parts by weight of the organic materials contained in the chemically amplified resist material and having a substituent or substituents capable of being released in the presence of an acid.
  • Mixing ratio of the onium salt compound and the sulfone compound and/or the sulfonate compound is such that 0.1 to 5 parts by weight of the onium salt compound and 0.5 to 10 parts by weight of sum of the sulfone compound and the sulfonate compound is preferably used based on 100 parts by weight of the organic materials having a substituent or substituents capable of being released in the presence of an acid, with 0.5 to 2 parts by weight of the onium salt being more preferable.
  • the phrase "sum of the sulfone compound and the sulfonate compound" means the amount of the compound alone.
  • the content of the onium salt compound is less than 0.1 part by weight, the combined use of the onium salt compound and the sulfone compound and/or the sulfonate compound fails to provide sufficient effects, for example, dimensional difference between line width of pattern in isolated pattern area and that in dense pattern area becomes great.
  • the content of the onium salt compound exceeds 5 parts by weight, almost no effects of the combined use are obtained, for example, cross section of the formed pattern gives a T-top profile and becomes taper-like, or when some effects of the combined use are obtained, there result other defects such as formation of scum upon development.
  • the content of the sulfone compound and the sulfonate compound is less than 0.5 part by weight, almost no effects are obtained by the combined use with the onium salt compound. For example, sufficient effect of suppressing formation of reaction products in the interface between the anti-reflective coating and the radiation sensitive material coating can not be expected to obtain, and serious standing wave is formed.
  • the content exceeds 10 parts by weight, there result such defects as that dimensional difference between line width of resist pattern in isolated pattern area and that in dense pattern area becomes great, and that cross sectional shape of the formed pattern becomes taper-like.
  • the mixing ratio (by weight) is preferably 1:0.5 to 1:10.
  • the total amount of the acid generators they are used in an amount of preferably 1 to 10 parts by weight per 100 parts by weight of the organic materials having a substituent or substituents capable of being released in the presence of an acid.
  • reaction products in the interface between the anti-reflective coating and the radiation sensitive material coating can be suppressed by using the sulfone compound or the sulfonate compound together with the onium salt compound.
  • optimum mixing rate of the onium salt and the sulfone compound and/or the sulfonate compound to the organic materials are selected there can be formed a developed pattern with high resolution wherein a strong development-inhibiting effect is obtained in unexposed areas and a high dissolution property for a developer is given to exposed areas.
  • Dissolution inhibitors are those substances which themselves contain an acid-decomposable protective group, control dissolution properties of the resin having acid-decomposable groups for an alkali developer solution and, after being decomposed in the presence of an acid, accelerate dissolution of the resin having acid-decomposable groups which are also decomposed to render the resin alkali-soluble.
  • Examples thereof include dibutoxycarbonylbisphenol A, dibutoxycarbonylbisphenol F, 4-t-butoxycarbonylphenyl, t-butyl cholate, t-butyl deoxycholate, diphenolic acid tert-butyl ester derivatives, tri(hydroxyphenyl)methane derivatives, etc.
  • Typical examples thereof include bis-(4-t-butoxycarbonylmethyloxy-2,5-dimethylphenyl)methyl-4-t-butoxycarbonylmethyloxybenzene, etc.
  • any of both radiation responsive basic compounds capable of being decomposed by exposure to radiation and radiation non-responsive basic compounds may be used. Addition of the basic compound serves to suppress deterioration of pattern properties even when processing steps are conducted with various delayed intervals upon formation of the pattern and can prevent diffusion of the acid produced in exposed areas into unexposed areas to thereby prevent reduction of contrast, thus being preferred.
  • the basic compound is added preferably in an amount of 0.05 to 10 parts by weight per 100 parts by weight of the organic materials containing a substituent or substituents capable of being released in the presence of an acid.
  • the radiation responsive basic compound sulfonium compounds, iodonium compounds, etc. are preferably used.
  • additives there are illustrated, for example, surfactants, sensitizers, light absorbents, dyes, pigments, organic carboxylic acids, leveling agents, stabilizers, low molecular weight compounds, plasticizers, etc.
  • any one may be used that can dissolve the components in the chemically amplified resist material to form a uniform radiation sensitive material coating.
  • glycol ethers such as ethyleneglycol monomethyl ether, ethyleneglycol monoethyl ether, and propyleneglycol monomethyl ether
  • glycol ether acetates such as ethyleneglycol monoethyl ether acetate and propyleneglycol monomethyl ether acetate (PGMEA)
  • esters such as ethyl lactate
  • ketones such as acetone, methyl ethyl ketone, cyclopentanone, cyclohexanone and cycloheptanone.
  • aromatic hydrocarbons such as toluene and xylene, acetonitrile, dimethylformamide, dioxane, etc. may also be used as the case demands.
  • etching gas to be used for dry-etching the anti-reflective coating any one may be used that has conventionally been used for removing organic coatings.
  • a mixed gas of chlorine gas (Cl 2 ) and oxygen gas (O 2 ) hereinafter referred to as "chlorine-containing etching gas”
  • a mixed gas of nitrogen gas (N 2 ) and oxygen gas (O 2 ) hereinafter referred to as "nitrogen-containing etching gas”
  • nitrogen-containing etching gas a mixed gas of sulfur dioxide gas (SO 2 ) and oxygen gas (O 2 )
  • SO 2 sulfur dioxide gas
  • oxygen gas oxygen-containing etching gas
  • Etching properties of each etching gas are described below.
  • the sulfur-containing etching gas is preferred since it does not involve the problem that an etchable layer 2 composed of polysilicon is etched and that dimensional variation and dimensional fluctuation of a pattern formed in the etchable layer become serious.
  • the chlorine-containing etching gas has stronger ionic properties, i.e., stronger sputtering properties than the sulfur-containing etching gas.
  • deposition products formed by the etching gas and adhered on the side wall of the anti-reflective coating 12 less come off and adhere onto the upper surface of the anti-reflective coating 12, and the etching gas shows large activity of removing the reaction products formed in the interface between the anti-reflective coating and the radiation sensitive material coating. Therefore, the number of residues composed of the etchable layer is small, said residues being formed by the masking function of the deposition products or the reaction products.
  • the etchable layer 11 in the step of dry-etching the etchable layer 11, its areas having been dry-etched by the chlorine-containing gas undergo over-etching, and semiconductor substrate 10 which is not essentially intended to be etched might be etched. Therefore, though the chlorine-containing gas can reduce the number of the residues in comparison with the sulfur-containing gas, it also etches semiconductor substrate 10, thus yield of semiconductor integrated circuit devices being decreased.
  • the nitrogen-containing etching gas also has stronger ionic properties, i.e., stronger sputtering properties than the sulfur-containing etching gas.
  • the patterned radiation sensitive material coating 13b is also seriously etched, and hence there arises a problem that patterned anti-reflective coating suffers serious dimensional variation and dimensional fluctuation. This is attributed to the fact that degree of adhesion, on the side wall of the radiation sensitive material coating 13b and the anti-reflective coating, of deposition products formed by the etching gas is less than the case of using the chlorine-containing etching gas.
  • the sulfur-containing etching gas gives a pattern width of 0.23 ⁇ m with thinning by about 0.02 ⁇ m for the design rule and gives the same dimensional variation in isolated pattern area and in dense pattern area
  • the nitrogen-containing etching gas gives a pattern width of 0.18 ⁇ m in an isolated pattern area and gives a pattern width of 0.20 ⁇ m in an area of 1:1 in line width:space width, thus giving a large dimensional variation for the design rule and a large dimensional variation between pattern in isolated pattern area and that in dense pattern area.
  • the nitrogen-containing etching gas has the problem that, though it can reduce the number of residues in comparison with the sulfur-containing etching gas, it gives large dimensional variation and fluctuation of the pattern composed of the etchable layer 11, thus yield of semiconductor integrated circuit devices being lowered.
  • the sulfur-containing etching gas has the problem that it forms more residues on the semiconductor substrate 10 composed of the etchable layer 11 with the reaction products functioning as a mask, than the chlorine- or nitrogen-containing etching gas, it does not cause the problem that the semiconductor substrate 10 is also etched as with the chlorine-containing etching gas or that dimensional variation and dimensional fluctuation of the pattern of etchable layer become large as with the nitrogen-containing etching gas.
  • the patterned radiation sensitive material coating 13b containing the sulfone compound or the sulfonate compound and using the sulfur-containing etching gas selectivity for the etchable layer to be etched 11 is improved, dimensional variation and dimensional fluctuation of the pattern of the etchable layer can be reduced, and the number of residues of the etchable layer formed on the semiconductor substrate 10 can be decreased.
  • An etchable layer 11 composed of polysilicon was deposited on 200-mm diametrical semiconductor substrate 10 composed of silicon with silicon oxide layer intervening therebetween as an etching stopper. Then, an organic material of polysulfone copolymer dissolved in a solvent of cyclohexanone was applied on the etchable layer 11 to form an anti-reflective coating 12 having a thickness of 150 nm.
  • a resist solution prepared by using 0.567 g of triphenylsulfonium trifl-ate, 3.0 g of biscyclohexylsulfonyl diazomethane, 7.9 g of a solution of 0.1 mmol/g of triphenylsulfonium acetate (TPSA) in propylene glycol monomethyl ether acetate (PGMEA) and 0.06 g of Megafac (surfactant made by Dainippon Ink and Chemicals, Incorporated: ingredient for improving filming properties upon coating resist and for improving affinity for a substrate) per 100 g of poly[p-(1-ethoxyethoxy)styrene-p-hydroxystyrene] and containing the solid components in a content of 15.5 wt % in PGMEA, was coated on the anti-reflective coating and baked on a direct hot plate at 90°C for 60 seconds to form a 0.690- ⁇ m thick radiation sensitive
  • This radiation sensitive material coating was selectively exposed through a mask using 248.4 nm KrF excimer laser light, subjected to post exposure baking (PEB) on a direct hot plate at 110°C for 90 seconds, then paddle-developed for 60 seconds in an alkali developer solution (a 2.38 wt % aqueous solution of tetramethylammonium hydroxide (TMAH)) to obtain a positive, line-and-space pattern.
  • PEB post exposure baking
  • TMAH tetramethylammonium hydroxide
  • the anti-reflective coating 12 was dry-etched with a mixed etching gas composed of sulfur dioxide gas (SO 2 ) and oxygen gas (O 2 ) through a mask of patterned radiation sensitive material coating 13b to thereby form a patterned anti-reflective coating.
  • the etchable layer 11 composed of polysilicon was dry-etched using a mixed etching gas composed of hydrogen bromide gas (HBr) and oxygen gas (O 2 ) through a mask of these patterned radiation sensitive material coating 13b and the anti-reflective coating to thereby form a pattern composed of the etchable layer 11.
  • the pattern was formed by changing the space widths of wiring pattern having a design rule of 0.25 ⁇ m with a pattern percentage of about 5 %. Number of the residues having sizes of about 50 nm or more was counted to be about 6000/wafer.
  • Example 2 The same anti-reflective coating as in Example 1 was formed on the etchable layer composed of polysilicon and deposited on a semiconductor substrate, and there was formed the same radiation sensitive material coating as in Example 1 except for not containing biscyclohexylsulfonyl diazomethane.
  • a pattern composed of the etchable layer was formed under the same conditions as in Example 1, there were formed about 10000/wafer residues.
  • Example 1 As can be seen from comparison of Example 1 with Comparative Example 1, the number of residues was decreased by about 40 % in Example 1. As a result, leakage current between wiring patterns or between conductive layer and wiring pattern in the semiconductor integrated circuit device can be decreased by about 40 %.
  • Example 2 The same radiation sensitive material coating as in Example 1 was formed on the etchable layer composed of polysilicon and deposited on a semiconductor substrate without forming the anti-reflective coating.
  • a pattern composed of the etchable layer was formed under the same conditions as in Example 1, there were formed about 500/wafer residues.
  • Example 2 Similar evaluation tests to that employed in Example 1 were conducted using, as organic materials for forming the anti-reflective coating, DUV-18, CD9, CD11 (all manufactured by Brewer Science Co.), AR2 (manufactured by Shipley Co.), SWK-EX2 (manufactured by Tokyo Oka Kogyo K.K.) to find formation of considerably larger number of residues in comparison with Comparative Example 2. It is seen from this that, when the anti-reflective coating is intervened between the etchable layer and the radiation sensitive material coating, an increase in number of the residues can not be avoided in comparison with the case where no anti-reflective coating is intervened.
  • Example 2 In the same manner as in Example 1 except for using bis (3-methylphenylsulfonyl)methane in place of biscyclohexylsulfonyl diazomethane, there was formed an etched pattern. Number of the residues was about 6000/wafer, thus the number of the residues being decreased by about 40 % in comparison with Comparative Example 1.
  • Example 2 In the same manner as in Example 1 except for using 1.0 g of bis(3-methylphenylsulfonyl) diazomethane in place of biscyclohexylsulfonyl diazomethane, there was formed an etched pattern. Number of the residues was about 4600/wafer, thus the number of the residues being decreased by about 64 % in comparison with Comparative Example 1.
  • Example 2 In the same manner as in Example 1 except for using 1.0 g of the compound shown by the following formula in place of biscyclohexylsulfonyl diazomethane, there was formed an etched pattern. Number of the residues was about 6000/wafer, thus the number of the residues being decreased by about 40 % in comparison with Comparative Example 1.
  • Example 2 In the same manner as in Example 1 except for using 1.0 g of pyrogallol trismethanesulfonate in place of biscyclohexylsulfonyl diazomethane, there was formed an etched pattern. Number of the residues was about 4500/wafer, thus the number of the residues being decreased by about 55 % in comparison with Comparative Example 1.
  • the anti-reflective coating 12 was dry-etched upon dry-etching the anti-reflective coating 12, and it was not conducted to simultaneously dry-etch the underlying etchable layer 11.
  • the procedures may be made once more from the step of applying the anti-reflective coating after removing the radiation sensitive material 13 and the anti-reflective coating 12. Therefore, there is the advantage that, when pattern formation is conducted with checking wafer properties after the completion of each step, formation of bad wafers can be prevented.
  • the dry-etching step in accordance with the present invention is not limited only to dry etching only the anti-reflective coating as described above, but it includes the method of dry-etching, for example, both the anti-reflective coating 12 and the etchable layer 11 in one and the same dry etching step.
  • the dry-etching method of dry-etching both the anti-reflective coating 12 and the etchable layer 11 in one and the same dry etching step gives a great advantage of shortening the steps.
  • This method is also one useful method of forming a pattern according to the present invention.
  • the radiation sensitive material coating which contains the sulfone compound and/or the sulfonate compound when selectively exposed to energy beams, aromatic acids released from these compounds effectively suppress radical reaction in the interface between the anti-reflective coating and the radiation sensitive material coating, thus formation of aromatic, reaction products being prevented in the interface.
  • the etchable layer is dry-etched using the patterned radiation sensitive material coating and anti-reflective coating as a mask to form a pattern composed of the etchable layer, number of the residues formed on a semiconductor substrate and composed of the etchable layer can be decreased.
  • the method of forming a pattern in accordance with the present invention can effectively prevent electrical leakage between wiring patterns or between conductive layer and wiring pattern in a semiconductor integrated curcuit device wherein wiring patterns are formed on the same conductive layer which might be electrically connected to each other through conductive residues or wherein a conductive layer and a wiring pattern formed on a semiconductor substrate might be electrically connected to each other through conductive residues, thus deterioration of the properties of resulting semiconductor integrated circuit device being surely prevented.
  • the onium salt compound and the sulfone compound and/or the sulfonate compound are contained as acid generators in the radiation sensitive material, there can be obtained a highly resolved resist pattern having no standing wave effect, not suffering formation of T-top, and having no difference between line width of resist pattern in isolated pattern area and that in dense pattern area, leading to formation of a highly resolved etched pattern having line width as designed.
  • the fourth step involves a step of dry-etching the anti-reflective coating by the sulfur-containing etching gas using the patterned radiation sensitive material coating as a mask, selectivity of etching the etchable layer can be improved, dimensional variation and dimensional fluctuation of the pattern composed of the etchable layer can be reduced, and number of the residues formed on the semiconductor substrate and composed of the etchable layer can be decreased.
  • the method of forming a pattern in accordance with the present invention is useful as a method for forming a fine pattern for manufacturing semiconductor integrated circuit devices.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP99912104A 1998-04-08 1999-04-05 Pattern forming method Expired - Lifetime EP0989460B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP09568198A JP3955385B2 (ja) 1998-04-08 1998-04-08 パターン形成方法
JP9568198 1998-04-08
PCT/JP1999/001792 WO1999053378A1 (en) 1998-04-08 1999-04-05 Pattern forming method

Publications (3)

Publication Number Publication Date
EP0989460A1 EP0989460A1 (en) 2000-03-29
EP0989460A4 EP0989460A4 (en) 2001-10-24
EP0989460B1 true EP0989460B1 (en) 2010-05-26

Family

ID=14144250

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99912104A Expired - Lifetime EP0989460B1 (en) 1998-04-08 1999-04-05 Pattern forming method

Country Status (8)

Country Link
US (1) US6527966B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0989460B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3955385B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100632196B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (2) CN1273865C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69942409D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TWI227812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1999053378A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP4272805B2 (ja) * 1999-12-27 2009-06-03 富士フイルム株式会社 ポジ型感放射線性組成物
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
US6760153B2 (en) * 2001-11-26 2004-07-06 Nortel Networks Limited Optical component with signal amplification
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US7144820B2 (en) * 2004-01-02 2006-12-05 Infineon Technologies Ag Method of manufacturing a layer sequence and a method of manufacturing an integrated circuit
JP4524199B2 (ja) * 2004-02-16 2010-08-11 富士フイルム株式会社 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法
CN100361275C (zh) * 2004-10-12 2008-01-09 联华电子股份有限公司 蚀刻工艺以及图案化工艺
WO2006101458A1 (en) * 2005-03-22 2006-09-28 National University Of Singapore Method for patterning ferrelectric/piezoelectric films
FR2899502B1 (fr) * 2006-04-06 2009-04-10 Macdermid Printing Solutions E Dispositif de gaufrage, tel qu'un cylindre ou manchon
US8367303B2 (en) 2006-07-14 2013-02-05 Micron Technology, Inc. Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control
JP5176902B2 (ja) * 2008-11-21 2013-04-03 富士通セミコンダクター株式会社 電子デバイスの製造方法及び設定装置
JP5561192B2 (ja) * 2010-02-26 2014-07-30 信越化学工業株式会社 高分子化合物及びこれを用いた化学増幅ポジ型レジスト組成物並びにパターン形成方法
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
CN112162469B (zh) * 2020-10-22 2021-06-08 南京晶驱集成电路有限公司 一种光刻图形的仿真方法及仿真系统

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919142B2 (ja) 1990-12-27 1999-07-12 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
JPH06333817A (ja) * 1993-05-24 1994-12-02 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JPH07226396A (ja) * 1994-02-10 1995-08-22 Sony Corp パターン形成方法
US5663035A (en) * 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
JP2964874B2 (ja) 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP2942167B2 (ja) 1994-09-02 1999-08-30 和光純薬工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
ATE244904T1 (de) * 1995-12-21 2003-07-15 Wako Pure Chem Ind Ltd Polymerzusammensetzung und rezistmaterial
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3482069B2 (ja) 1996-04-30 2003-12-22 松下電器産業株式会社 有機膜のエッチング方法
JP3679206B2 (ja) * 1996-09-20 2005-08-03 東京応化工業株式会社 ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
WO1998032162A1 (en) * 1997-01-21 1998-07-23 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6103447A (en) * 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6001538A (en) * 1998-04-06 1999-12-14 Taiwan Semiconductor Manufacturing Company Ltd. Damage free passivation layer etching process

Also Published As

Publication number Publication date
WO1999053378A1 (en) 1999-10-21
JPH11295888A (ja) 1999-10-29
KR100632196B1 (ko) 2006-10-11
DE69942409D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2010-07-08
JP3955385B2 (ja) 2007-08-08
CN1811600A (zh) 2006-08-02
CN1263611A (zh) 2000-08-16
US6527966B1 (en) 2003-03-04
KR20010013561A (ko) 2001-02-26
CN100476594C (zh) 2009-04-08
EP0989460A4 (en) 2001-10-24
CN1273865C (zh) 2006-09-06
EP0989460A1 (en) 2000-03-29
TWI227812B (en) 2005-02-11

Similar Documents

Publication Publication Date Title
EP0989460B1 (en) Pattern forming method
KR100632714B1 (ko) 화학증폭형 레지스트 조성물
US6344304B1 (en) Radiation sensitive material and method for forming pattern
JP3046225B2 (ja) ポジ型レジスト膜形成用塗布液
JPH1172925A (ja) 下層膜用組成物およびこれを用いたパターン形成方法
EP0679951B1 (en) Positive resist composition
KR100207755B1 (ko) 포지티브형 포토레지스트조성물
JPH09127698A (ja) ポジ型レジスト組成物
JP3193027B2 (ja) レジストパターン形成方法
JP3553213B2 (ja) ポジ型レジスト組成物
JP2960661B2 (ja) ポジ型レジスト組成物
JP3615273B2 (ja) ポジ型レジスト組成物
JP3093720B2 (ja) パターン形成方法
JP3164305B2 (ja) ポジ型レジスト膜形成用塗布液及びそれを用いたレジストパターン形成方法
JP2960656B2 (ja) ポジ型レジスト組成物
KR0171665B1 (ko) 기판상에 패턴화된 레지스트층 형성방법
US20240288771A1 (en) Semiconductor photoresist composition and method of forming patterns using the composition
JP3290565B2 (ja) ポジ型レジスト組成物
JP3283017B2 (ja) 混合樹脂組成物及びそれを用いたポジ型レジスト組成物
JP3413187B2 (ja) レジスト用混合樹脂組成物
JPH08166670A (ja) ポジ型レジスト組成物
JP2000171978A (ja) パタ―ン形成方法
JP2000171979A (ja) パタ―ン形成方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT

17P Request for examination filed

Effective date: 20000425

A4 Supplementary search report drawn up and despatched

Effective date: 20010906

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): DE FR GB IT

RIC1 Information provided on ipc code assigned before grant

Free format text: 7G 03F 7/004 A, 7G 03F 7/11 B, 7G 03F 7/40 B, 7G 03F 7/09 B, 7H 01L 21/3213 B

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: CLARIANT FINANCE (BVI) LIMITED

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: AZ ELECTRONIC MATERIALS USA CORP.

17Q First examination report despatched

Effective date: 20071019

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 69942409

Country of ref document: DE

Date of ref document: 20100708

Kind code of ref document: P

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20110301

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 69942409

Country of ref document: DE

Effective date: 20110228

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 69942409

Country of ref document: DE

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER LLP, DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

Free format text: REGISTERED BETWEEN 20150205 AND 20150211

REG Reference to a national code

Ref country code: FR

Ref legal event code: TP

Owner name: MERCK PATENT GMBH, DE

Effective date: 20150204

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 69942409

Country of ref document: DE

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER LLP, DE

Effective date: 20150223

Ref country code: DE

Ref legal event code: R081

Ref document number: 69942409

Country of ref document: DE

Owner name: MERCK PATENT GMBH, DE

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J., US

Effective date: 20150223

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 18

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 19

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20180329

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20180315

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20180320

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20180420

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69942409

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20190404

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20190404