EP0936632B1 - Elément de résistance - Google Patents

Elément de résistance Download PDF

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Publication number
EP0936632B1
EP0936632B1 EP98811217A EP98811217A EP0936632B1 EP 0936632 B1 EP0936632 B1 EP 0936632B1 EP 98811217 A EP98811217 A EP 98811217A EP 98811217 A EP98811217 A EP 98811217A EP 0936632 B1 EP0936632 B1 EP 0936632B1
Authority
EP
European Patent Office
Prior art keywords
filler
resistor element
element according
particle sizes
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98811217A
Other languages
German (de)
English (en)
Other versions
EP0936632A1 (fr
Inventor
Joachim Dr. Glatz-Reichenbach
Ralf Dr. Strümpler
Jörgen Dr. Skindhoj
Felix Dr. Greuter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Research Ltd Switzerland
ABB Research Ltd Sweden
Original Assignee
ABB Research Ltd Switzerland
ABB Research Ltd Sweden
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Filing date
Publication date
Application filed by ABB Research Ltd Switzerland, ABB Research Ltd Sweden filed Critical ABB Research Ltd Switzerland
Publication of EP0936632A1 publication Critical patent/EP0936632A1/fr
Application granted granted Critical
Publication of EP0936632B1 publication Critical patent/EP0936632B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type

Definitions

  • the invention relates to a resistance element according to the Preamble of claim 1.
  • a so-called PTC resistors have one at a particular one Switching current density increasing by several orders of magnitude Resistance on and are used to limit the current, especially in Short circuit case, used.
  • US-A-4,910,389 describes a resistance element with PTC behavior with a polymer matrix and two in that matrix embedded powdered fillers, one of which is an electrically good conductive soot and Has particle sizes from 20 to 250 m ⁇ and the other is doped ZnO or another semiconducting material and particle sizes down to 1 micron.
  • the ratio of Particle sizes from conductivity soot to semiconducting Material can be 1: 5 to 1:20.
  • Such one Resistance element is characterized by great stability because its specific resistance also changes changes several PTC transitions only slightly.
  • the invention is based, generic task Develop resistance elements such that their Dielectric strength is increased significantly.
  • Resistor elements are largely commutated of the current to the second filler in the range of Current densities and corresponding field strengths as they do typically in the switching range of the resistance element occur. This ensures that the training a narrow switching zone does not become an immediate one Power cut - possibly followed by arcing or a punch - leads, but that the current over the particles of the second filler briefly continue flows and the switching zone widens so far, that they can withstand high voltages without damaging the Resistance elements can carry.
  • the main advantages are: significantly higher short-circuit voltages are interrupted can and that the withstand voltage is much higher lies than in known generic Resistance elements.
  • the related services Otherwise, resistance elements according to the invention can only using complex series parallel circuits from Resistance elements and varistors can be achieved.
  • the SiC doped with Al was from the electric melt Related to Kempten. ZnO was obtained from Merck and endowed. Resistance elements were produced from the mixtures and experiments carried out by going into a circuit like it is shown in Fig. 1, installed and Short-circuit currents have been exposed. For this purpose, a Capacitor C charged to 300V, 850V or 1'200V. The Dimensioning of the capacitor C and the series switched inductance L were chosen so that a short-circuit current of 12'000A, based on 50Hz resulted. The short circuit current was closed of a switch S with capacitor C charged. The tested resistance element PTC was always one Varistor element Var as overvoltage protection connected in parallel.
  • the average Particle size of the second filler should therefore be that significantly exceed the first filler, preferably by at least a factor of 2. If the grain is relatively coarse second filler, however, shows an irregular Current distribution in the switching area, which is too high local Energy intake leads and adversely affects the Dielectric strength of the resistance element affects. The Factor by which the average particle size of the second filler that of the first filler is therefore at most 5.
  • the material of the first filler a choice other than the specified TiB 2 , z. B. TiC, VC, WC, MoSi 2 . It is important, especially in the interest of good cold conductivity properties, to have a low specific resistance. If possible, it should not be higher than 10 -3 ⁇ cm. As stated above, the specific resistance is also crucially important for the second filler. The specific resistance of the material should if possible not be less than 10 -2 ⁇ cm. The specific resistance must be so that the resistance element can hold a high holding voltage with a low leakage current.
  • the various requirements for the second filler can also be met with SiC or ZnO doped with B, Ga, In or N, P, As or with other correspondingly doped semiconductors.
  • a thermoplastic such. B. HD polyethylene or a thermoset is preferred.
  • the particle sizes should be small in the interest of a quick response and should preferably be essentially between 10 ⁇ m and 40 ⁇ m.
  • the second filler should be higher, preferably between 50 ⁇ m and 200 ⁇ m.
  • the composition of the resistance body can of course differ from that used in the tests. Fractions of 30 to 70% by volume are preferred for the first filler and between 10 and 40% by volume for the second filler, but together they do not make up more than the highest 90% by volume of the mixture.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Memories (AREA)

Claims (9)

  1. Élément résistif électrique avec un corps résistif constitué d'une matrice de polymère disposée entre deux bornes de contact, un premier matériau de remplissage en poudre ayant une granulométrie comprise pour l'essentiel entre 10 µm et 40 µm dans un matériau ayant une résistance spécifique maximale de 10-3 Ωcm et avec un deuxième matériau de remplissage ne poudre qui présente une résistance spécifique qui diminue lorsque l'intensité du champ augmente, caractérisé en ce que la granulométrie moyenne du deuxième matériau de remplissage est supérieure à celle du premier matériau de remplissage et dépasse celle du premier matériau de remplissage au maximum d'un facteur 5, et que la résistance spécifique du deuxième matériau de remplissage à des intensités de champ ≥ 2 000 V/cm n'est pas supérieure à 50 Ωcm.
  2. Élément résistif selon la revendication 1, caractérisé en ce que la résistance spécifique du deuxième matériau de remplissage est au moins de 10-2 Ωcm.
  3. Élément résistif selon l'une des revendications 1 ou 2, caractérisé en ce que la granulométrie moyenne du deuxième matériau de remplissage dépasse celle du premier matériau de remplissage au moins d'un facteur 2.
  4. Élément résistif selon l'une des revendications 1 à 3, caractérisé en ce que le deuxième matériau de remplissage est pour l'essentiel composé d'au moins l'une des substances suivantes : poudre de SiC dopé, poudre de ZnO dopé.
  5. Élément résistif selon l'une des revendications 1 à 4, caractérisé en ce que la granulométrie du deuxième matériau de remplissage est comprise pour l'essentiel entre 50 µm et 200 µm.
  6. Élément résistif selon l'une des revendications 1 à 5, caractérisé en ce que le premier matériau de remplissage se compose pour l'essentiel de poudre de TiB2, TiC, VC ou WC.
  7. Élément résistif selon l'une des revendications 1 à 6, caractérisé en ce que la matrice de polymère se compose pour l'essentiel d'un thermoplastique, plus particulièrement d'un polyéthylène HD, ou d'un duromère.
  8. Élément résistif selon l'une des revendications 1 à 7, caractérisé en ce que la proportion du premier matériau de remplissage dans le corps résistif est comprise entre 30 et 70 % (vol.).
  9. Élément résistif selon l'une des revendications 1 à 8, caractérisé en ce que la proportion du deuxième matériau de remplissage dans le corps résistif est comprise entre 10 et 40 % (vol.).
EP98811217A 1998-01-09 1998-12-10 Elément de résistance Expired - Lifetime EP0936632B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19800470 1998-01-09
DE19800470A DE19800470A1 (de) 1998-01-09 1998-01-09 Widerstandselement

Publications (2)

Publication Number Publication Date
EP0936632A1 EP0936632A1 (fr) 1999-08-18
EP0936632B1 true EP0936632B1 (fr) 2002-05-29

Family

ID=7854171

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98811217A Expired - Lifetime EP0936632B1 (fr) 1998-01-09 1998-12-10 Elément de résistance

Country Status (5)

Country Link
US (1) US6157290A (fr)
EP (1) EP0936632B1 (fr)
CN (1) CN1143324C (fr)
AT (1) ATE218242T1 (fr)
DE (2) DE19800470A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1027784B2 (fr) * 1997-10-28 2010-05-26 First Data Mobile Holdings Limited Procede pour la signature numerique d'un message
JP3503548B2 (ja) * 1999-11-12 2004-03-08 株式会社村田製作所 電圧非直線抵抗体及びその製造方法、並びに、この電圧非直線抵抗体を用いたバリスタ
JP3598954B2 (ja) * 2000-08-21 2004-12-08 株式会社村田製作所 電圧非直線抵抗体の製造方法
US6645393B2 (en) * 2001-03-19 2003-11-11 Inpaq Technology Co., Ltd. Material compositions for transient voltage suppressors
ATE403935T1 (de) * 2004-04-06 2008-08-15 Abb Research Ltd Elektrisches nichtlineares material für anwendungen mit hoher und mittlerer spannung
CN101666613B (zh) * 2009-09-25 2012-10-31 上海宏力半导体制造有限公司 提取电阻模型长度偏差值的方法
DE102010008603A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Elektrisches Widerstandselement
CN103094890A (zh) * 2011-11-02 2013-05-08 上官春轶 柔性限流电路
CN103368165A (zh) * 2012-03-05 2013-10-23 顾敏珠 消弧、消谐及过电压保护装置
CN103632784B (zh) * 2013-11-23 2016-04-13 华中科技大学 一种叠层片式热压敏复合电阻器及其制备方法
GB2541465A (en) * 2015-08-21 2017-02-22 General Electric Technology Gmbh Electrical assembly
CN108727031B (zh) * 2018-06-19 2021-02-12 中国科学院上海硅酸盐研究所 一种碳化硅基复相压敏陶瓷及其液相烧结制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547451B1 (fr) * 1983-06-13 1986-02-28 Electricite De France Materiau composite a resistance electrique non lineaire, notamment pour la repartition du potentiel dans les extremites de cables
JPH0777161B2 (ja) * 1986-10-24 1995-08-16 日本メクトロン株式会社 Ｐｔｃ組成物、その製造法およびｐｔｃ素子
US4910389A (en) * 1988-06-03 1990-03-20 Raychem Corporation Conductive polymer compositions
SE468026B (sv) * 1990-06-05 1992-10-19 Asea Brown Boveri Saett att framstaella en elektrisk anordning
DE4142523A1 (de) * 1991-12-21 1993-06-24 Asea Brown Boveri Widerstand mit ptc - verhalten
US5378407A (en) * 1992-06-05 1995-01-03 Raychem Corporation Conductive polymer composition
DE4221309A1 (de) * 1992-06-29 1994-01-05 Abb Research Ltd Strombegrenzendes Element
AU6627394A (en) * 1993-04-28 1994-11-21 Mark Mitchnick Conductive polymers
DE4427161A1 (de) * 1994-08-01 1996-02-08 Abb Research Ltd Verfahren zur Herstellung eines PTC-Widerstandes und danach hergestellter Widerstand
DE19520869A1 (de) * 1995-06-08 1996-12-12 Abb Research Ltd PTC-Widerstand
GB9600819D0 (en) * 1996-01-16 1996-03-20 Raychem Gmbh Electrical stress control
US5798060A (en) * 1997-02-06 1998-08-25 E. I. Du Pont De Nemours And Company Static-dissipative polymeric composition

Also Published As

Publication number Publication date
US6157290A (en) 2000-12-05
EP0936632A1 (fr) 1999-08-18
DE59804235D1 (de) 2002-07-04
ATE218242T1 (de) 2002-06-15
CN1143324C (zh) 2004-03-24
CN1226733A (zh) 1999-08-25
DE19800470A1 (de) 1999-07-15

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