EP0921627A3 - Pompe de charge de haute tension avec des transistors du type de basse tension - Google Patents
Pompe de charge de haute tension avec des transistors du type de basse tension Download PDFInfo
- Publication number
- EP0921627A3 EP0921627A3 EP99100290A EP99100290A EP0921627A3 EP 0921627 A3 EP0921627 A3 EP 0921627A3 EP 99100290 A EP99100290 A EP 99100290A EP 99100290 A EP99100290 A EP 99100290A EP 0921627 A3 EP0921627 A3 EP 0921627A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- charge pump
- type transistors
- high voltage
- low voltage
- nodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22160294A | 1994-04-01 | 1994-04-01 | |
US221602 | 1994-04-01 | ||
EP95914892A EP0701737B1 (fr) | 1994-04-01 | 1995-03-24 | Procédé de fabrication d'une pluralite de transistors sur un substrat |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95914892A Division EP0701737B1 (fr) | 1994-04-01 | 1995-03-24 | Procédé de fabrication d'une pluralite de transistors sur un substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0921627A2 EP0921627A2 (fr) | 1999-06-09 |
EP0921627A3 true EP0921627A3 (fr) | 1999-09-22 |
Family
ID=22828490
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99100290A Withdrawn EP0921627A3 (fr) | 1994-04-01 | 1995-03-24 | Pompe de charge de haute tension avec des transistors du type de basse tension |
EP95914892A Expired - Lifetime EP0701737B1 (fr) | 1994-04-01 | 1995-03-24 | Procédé de fabrication d'une pluralite de transistors sur un substrat |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95914892A Expired - Lifetime EP0701737B1 (fr) | 1994-04-01 | 1995-03-24 | Procédé de fabrication d'une pluralite de transistors sur un substrat |
Country Status (5)
Country | Link |
---|---|
US (3) | US5475335A (fr) |
EP (2) | EP0921627A3 (fr) |
KR (1) | KR100351525B1 (fr) |
DE (1) | DE69530894T2 (fr) |
WO (1) | WO1995027310A1 (fr) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364801A (en) * | 1990-12-17 | 1994-11-15 | Texas Instruments Incorporated | Method of forming a charge pump circuit |
US5475335A (en) * | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
JP3184065B2 (ja) * | 1994-07-25 | 2001-07-09 | セイコーインスツルメンツ株式会社 | 半導体集積回路装置及び電子機器 |
JP3173327B2 (ja) * | 1995-06-16 | 2001-06-04 | 富士通株式会社 | 半導体装置 |
TW362275B (en) * | 1996-09-05 | 1999-06-21 | Matsushita Electronics Corp | Semiconductor device and method for producing the same |
JPH10189762A (ja) | 1996-12-20 | 1998-07-21 | Nec Corp | 半導体装置およびその製造方法 |
KR100240872B1 (ko) * | 1997-02-17 | 2000-01-15 | 윤종용 | 정전기 방전 보호 회로 및 그것을 구비하는 집적 회로 |
DE19709724A1 (de) * | 1997-03-10 | 1998-09-24 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
JP4837154B2 (ja) * | 1997-05-30 | 2011-12-14 | シャープ株式会社 | 半導体装置およびその駆動方法 |
US6218895B1 (en) * | 1997-06-20 | 2001-04-17 | Intel Corporation | Multiple well transistor circuits having forward body bias |
US6107672A (en) * | 1997-09-04 | 2000-08-22 | Matsushita Electronics Corporation | Semiconductor device having a plurality of buried wells |
KR100275725B1 (ko) * | 1997-12-27 | 2000-12-15 | 윤종용 | 트리플웰 구조를 갖는 반도체 메모리 장치 및 그 제조방법 |
US6133077A (en) * | 1998-01-13 | 2000-10-17 | Lsi Logic Corporation | Formation of high-voltage and low-voltage devices on a semiconductor substrate |
US6160282A (en) * | 1998-04-21 | 2000-12-12 | Foveon, Inc. | CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance |
US6448841B1 (en) | 1998-05-01 | 2002-09-10 | Texas Instruments Incorporated | Efficiency charge pump circuit |
US6344959B1 (en) | 1998-05-01 | 2002-02-05 | Unitrode Corporation | Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage |
US6093585A (en) * | 1998-05-08 | 2000-07-25 | Lsi Logic Corporation | High voltage tolerant thin film transistor |
EP0977264B1 (fr) * | 1998-07-31 | 2006-04-26 | Freescale Semiconductor, Inc. | Structure semiconductrice pour circuit d'attaque avec décalage de niveau |
US6156596A (en) * | 1998-12-10 | 2000-12-05 | United Microelectronics Corp. | Method for fabricating a complementary metal oxide semiconductor image sensor |
KR100275962B1 (ko) | 1998-12-30 | 2001-02-01 | 김영환 | 반도체장치 및 그의 제조방법_ |
DE19913081C1 (de) * | 1999-03-23 | 2000-08-03 | Siemens Ag | Integrierte Schaltung mit zwei Transistoren unterschiedlichen Leitungstyps und Verfahren zu ihrem Betrieb |
DE19930094A1 (de) * | 1999-06-30 | 2001-01-04 | Philips Corp Intellectual Pty | Datenbus-Transmitter |
JP2001036015A (ja) * | 1999-07-23 | 2001-02-09 | Mitsubishi Electric Corp | オンチップキャパシタ |
US6291304B1 (en) * | 1999-09-15 | 2001-09-18 | Taiwan Semiconductor Manufacturing Company | Method of fabricating a high voltage transistor using P+ buried layer |
GB0000510D0 (en) * | 2000-01-11 | 2000-03-01 | Koninkl Philips Electronics Nv | A charge pump circuit |
DE60123027T2 (de) * | 2000-03-22 | 2007-01-11 | The Board Of Trustees Of The University Of Illinois, Chicago | Dynamisch kontrollierter Ladungspumpenleistungswandler mit Ultrakondensator |
US6498357B2 (en) * | 2001-02-09 | 2002-12-24 | United Microelectronics Corp. | Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process |
US6501139B1 (en) | 2001-03-30 | 2002-12-31 | Matrix Semiconductor, Inc. | High-voltage transistor and fabrication process |
US6403992B1 (en) * | 2001-06-05 | 2002-06-11 | Integrated Technology Express Inc. | Complementary metal-oxide semiconductor device |
JP3960513B2 (ja) * | 2001-08-01 | 2007-08-15 | シャープ株式会社 | 半導体チャージポンプ回路および不揮発性半導体記憶装置 |
US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
TW569444B (en) * | 2001-12-28 | 2004-01-01 | Sanyo Electric Co | Charge pump device |
US6774707B1 (en) | 2002-01-14 | 2004-08-10 | Altera Corporation | Charge pump circuits and methods |
JP2003258118A (ja) * | 2002-03-06 | 2003-09-12 | Seiko Epson Corp | 半導体装置 |
JP2003264244A (ja) * | 2002-03-08 | 2003-09-19 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US6747332B2 (en) * | 2002-04-01 | 2004-06-08 | Motorola, Inc. | Semiconductor component having high voltage MOSFET and method of manufacture |
KR100873813B1 (ko) * | 2002-06-29 | 2008-12-11 | 매그나칩 반도체 유한회사 | 로직부가 격리되는 고전압 트랜지스터 |
US7212446B2 (en) * | 2002-09-16 | 2007-05-01 | Impinj, Inc. | Counteracting overtunneling in nonvolatile memory cells using charge extraction control |
US7149118B2 (en) * | 2002-09-16 | 2006-12-12 | Impinj, Inc. | Method and apparatus for programming single-poly pFET-based nonvolatile memory cells |
US20050030827A1 (en) * | 2002-09-16 | 2005-02-10 | Impinj, Inc., A Delaware Corporation | PMOS memory cell |
TW578321B (en) * | 2002-10-02 | 2004-03-01 | Topro Technology Inc | Complementary metal-oxide semiconductor structure for a battery protection circuit and battery protection circuit therewith |
FR2851859B1 (fr) * | 2003-02-27 | 2006-03-03 | St Microelectronics Sa | Circuit d'interface |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
KR100568201B1 (ko) * | 2004-01-17 | 2006-04-05 | 삼성전자주식회사 | Rs-232 트랜스미터장치 |
US7283390B2 (en) * | 2004-04-21 | 2007-10-16 | Impinj, Inc. | Hybrid non-volatile memory |
US8111558B2 (en) * | 2004-05-05 | 2012-02-07 | Synopsys, Inc. | pFET nonvolatile memory |
EP3570374B1 (fr) | 2004-06-23 | 2022-04-20 | pSemi Corporation | Extrémité avant rf intégrée |
JP4530823B2 (ja) * | 2004-12-02 | 2010-08-25 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
US7436043B2 (en) * | 2004-12-21 | 2008-10-14 | Taiwan Semiconductor Manufacturing Co., Ltd | N-well and N+ buried layer isolation by auto doping to reduce chip size |
US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US20070170979A1 (en) * | 2005-11-25 | 2007-07-26 | Giovanni Campardo | Charge pump systems and methods |
EP1791245A1 (fr) * | 2005-11-25 | 2007-05-30 | STMicroelectronics S.r.l. | Circuit pompe de charge |
KR100705336B1 (ko) | 2006-01-05 | 2007-04-09 | 삼성전자주식회사 | 트리플 웰 구조를 가지는 반도체 메모리 장치 및 그 제조방법 |
DE602006016230D1 (de) | 2006-03-17 | 2010-09-30 | St Microelectronics Srl | Mit Niederspannungstransistoren implementierter Pegelschieber für eine Halbleiterspeichervorrichtung |
US7768059B2 (en) * | 2006-06-26 | 2010-08-03 | Ememory Technology Inc. | Nonvolatile single-poly memory device |
US20070296034A1 (en) * | 2006-06-26 | 2007-12-27 | Hsin-Ming Chen | Silicon-on-insulator (soi) memory device |
US8122307B1 (en) | 2006-08-15 | 2012-02-21 | Synopsys, Inc. | One time programmable memory test structures and methods |
US8497167B1 (en) * | 2007-01-17 | 2013-07-30 | National Semiconductor Corporation | EDS protection diode with pwell-nwell resurf |
US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
CN101364199B (zh) * | 2007-08-06 | 2012-01-18 | 鸿富锦精密工业(深圳)有限公司 | 串行通信监测系统及监测设备 |
US7902611B1 (en) * | 2007-11-27 | 2011-03-08 | Altera Corporation | Integrated circuit well isolation structures |
CN101896985B (zh) | 2007-12-14 | 2012-05-23 | 株式会社村田制作所 | 薄膜叠层电容器的制造方法 |
US7894261B1 (en) | 2008-05-22 | 2011-02-22 | Synopsys, Inc. | PFET nonvolatile memory |
WO2010008586A2 (fr) | 2008-07-18 | 2010-01-21 | Peregrine Semiconductor Corporation | Circuits et procédé de génération de polarisation à faible bruit et haut rendement |
US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US9520486B2 (en) | 2009-11-04 | 2016-12-13 | Analog Devices, Inc. | Electrostatic protection device |
US8432651B2 (en) | 2010-06-09 | 2013-04-30 | Analog Devices, Inc. | Apparatus and method for electronic systems reliability |
JP2012038818A (ja) * | 2010-08-04 | 2012-02-23 | Toshiba Corp | 半導体装置 |
US10199482B2 (en) | 2010-11-29 | 2019-02-05 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
US8536674B2 (en) * | 2010-12-20 | 2013-09-17 | General Electric Company | Integrated circuit and method of fabricating same |
US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
US9264053B2 (en) | 2011-01-18 | 2016-02-16 | Peregrine Semiconductor Corporation | Variable frequency charge pump |
US8592860B2 (en) | 2011-02-11 | 2013-11-26 | Analog Devices, Inc. | Apparatus and method for protection of electronic circuits operating under high stress conditions |
US8947841B2 (en) | 2012-02-13 | 2015-02-03 | Analog Devices, Inc. | Protection systems for integrated circuits and methods of forming the same |
US8829570B2 (en) | 2012-03-09 | 2014-09-09 | Analog Devices, Inc. | Switching device for heterojunction integrated circuits and methods of forming the same |
US8946822B2 (en) | 2012-03-19 | 2015-02-03 | Analog Devices, Inc. | Apparatus and method for protection of precision mixed-signal electronic circuits |
CN103426878B (zh) * | 2012-05-16 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 一种高压nldmos静电保护结构 |
CN103545365B (zh) * | 2012-07-12 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 用于静电保护的高压nldmos结构 |
US9379103B2 (en) * | 2012-10-17 | 2016-06-28 | Semtech Corporation | Semiconductor device and method of preventing latch-up in a charge pump circuit |
US8796729B2 (en) | 2012-11-20 | 2014-08-05 | Analog Devices, Inc. | Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same |
US8860080B2 (en) | 2012-12-19 | 2014-10-14 | Analog Devices, Inc. | Interface protection device with integrated supply clamp and method of forming the same |
US9006781B2 (en) | 2012-12-19 | 2015-04-14 | Analog Devices, Inc. | Devices for monolithic data conversion interface protection and methods of forming the same |
US9123540B2 (en) | 2013-01-30 | 2015-09-01 | Analog Devices, Inc. | Apparatus for high speed signal processing interface |
US9275991B2 (en) | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
US20150236798A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Methods for Increasing RF Throughput Via Usage of Tunable Filters |
US8981535B2 (en) | 2013-04-30 | 2015-03-17 | Robert Bosch Gmbh | Charge pump capacitor assembly with silicon etching |
US9147677B2 (en) | 2013-05-16 | 2015-09-29 | Analog Devices Global | Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same |
CN103887194A (zh) * | 2013-05-23 | 2014-06-25 | 上海华力微电子有限公司 | 并行测试器件 |
US9171832B2 (en) | 2013-05-24 | 2015-10-27 | Analog Devices, Inc. | Analog switch with high bipolar blocking voltage in low voltage CMOS process |
US9484739B2 (en) | 2014-09-25 | 2016-11-01 | Analog Devices Global | Overvoltage protection device and method |
US9478608B2 (en) | 2014-11-18 | 2016-10-25 | Analog Devices, Inc. | Apparatus and methods for transceiver interface overvoltage clamping |
US10068894B2 (en) | 2015-01-12 | 2018-09-04 | Analog Devices, Inc. | Low leakage bidirectional clamps and methods of forming the same |
TWI645534B (zh) * | 2015-03-06 | 2018-12-21 | 聯華電子股份有限公司 | 半導體靜電放電保護元件 |
US10181719B2 (en) | 2015-03-16 | 2019-01-15 | Analog Devices Global | Overvoltage blocking protection device |
US9673187B2 (en) | 2015-04-07 | 2017-06-06 | Analog Devices, Inc. | High speed interface protection apparatus |
US9621033B2 (en) * | 2015-09-09 | 2017-04-11 | Nxp Usa, Inc. | Charge pump circuit for providing multiplied voltage |
US9831233B2 (en) | 2016-04-29 | 2017-11-28 | Analog Devices Global | Apparatuses for communication systems transceiver interfaces |
US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
US10249609B2 (en) | 2017-08-10 | 2019-04-02 | Analog Devices, Inc. | Apparatuses for communication systems transceiver interfaces |
US10700056B2 (en) | 2018-09-07 | 2020-06-30 | Analog Devices, Inc. | Apparatus for automotive and communication systems transceiver interfaces |
US11616506B2 (en) * | 2018-09-26 | 2023-03-28 | Nxp Usa, Inc. | High speed buffer circuit |
US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
US11342323B2 (en) * | 2019-05-30 | 2022-05-24 | Analog Devices, Inc. | High voltage tolerant circuit architecture for applications subject to electrical overstress fault conditions |
US11362203B2 (en) | 2019-09-26 | 2022-06-14 | Analog Devices, Inc. | Electrical overstress protection for electronic systems subject to electromagnetic compatibility fault conditions |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4214174A (en) * | 1977-03-25 | 1980-07-22 | Plessey Handel Und Investments Ag | Voltage multiplier employing clock gated transistor chain |
JPS63246032A (ja) * | 1987-03-31 | 1988-10-13 | Sony Corp | Ad変換回路 |
JPH02131359A (ja) * | 1988-11-04 | 1990-05-21 | Nec Corp | Dc−dcコンバータ回路 |
US5051881A (en) * | 1990-07-05 | 1991-09-24 | Motorola, Inc. | Voltage multiplier |
EP0466532A1 (fr) * | 1990-06-21 | 1992-01-15 | STMicroelectronics S.A. | Dispositif à pompes de charges à phases imbriquées |
WO1992003871A1 (fr) * | 1990-08-25 | 1992-03-05 | Deutsche Thomson-Brandt Gmbh | Generateur de tensions a amplitudes couplees |
EP0492538A2 (fr) * | 1990-12-20 | 1992-07-01 | Nec Corporation | Circuit d'interface comprenant un convertisseur continu-continu |
JPH0614527A (ja) * | 1992-06-26 | 1994-01-21 | Nec Corp | 半導体集積回路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4403395A (en) * | 1979-02-15 | 1983-09-13 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
NL8104862A (nl) * | 1981-10-28 | 1983-05-16 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
JPH0652792B2 (ja) * | 1985-02-26 | 1994-07-06 | 日産自動車株式会社 | 半導体装置 |
JPS6273755A (ja) * | 1985-09-27 | 1987-04-04 | Toshiba Corp | 電源電圧降下回路 |
US4825275A (en) * | 1987-05-28 | 1989-04-25 | Texas Instruments Incorporated | Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
US5060044A (en) * | 1987-05-28 | 1991-10-22 | Texas Instruments Incorporated | Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
JP2689114B2 (ja) * | 1987-05-30 | 1997-12-10 | 株式会社リコー | 半導体集積回路装置の製造方法 |
US5047358A (en) * | 1989-03-17 | 1991-09-10 | Delco Electronics Corporation | Process for forming high and low voltage CMOS transistors on a single integrated circuit chip |
US5036229A (en) * | 1989-07-18 | 1991-07-30 | Gazelle Microcircuits, Inc. | Low ripple bias voltage generator |
US5059815A (en) * | 1990-04-05 | 1991-10-22 | Advanced Micro Devices, Inc. | High voltage charge pumps with series capacitors |
IT1239781B (it) * | 1990-05-08 | 1993-11-15 | Texas Instruments Italia Spa | Circuito e metodo per commutare selettivamente tensioni negative in circuiti integrati cmos |
JP2953482B2 (ja) * | 1992-01-17 | 1999-09-27 | 日本電気株式会社 | Cmos集積回路 |
US5475335A (en) * | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
-
1994
- 1994-10-07 US US08/319,902 patent/US5475335A/en not_active Expired - Lifetime
-
1995
- 1995-03-24 KR KR1019950705424A patent/KR100351525B1/ko not_active IP Right Cessation
- 1995-03-24 WO PCT/US1995/003782 patent/WO1995027310A1/fr active IP Right Grant
- 1995-03-24 EP EP99100290A patent/EP0921627A3/fr not_active Withdrawn
- 1995-03-24 EP EP95914892A patent/EP0701737B1/fr not_active Expired - Lifetime
- 1995-03-24 DE DE69530894T patent/DE69530894T2/de not_active Expired - Lifetime
- 1995-06-07 US US08/483,214 patent/US5622885A/en not_active Expired - Lifetime
- 1995-10-05 US US08/556,295 patent/US5786617A/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4214174A (en) * | 1977-03-25 | 1980-07-22 | Plessey Handel Und Investments Ag | Voltage multiplier employing clock gated transistor chain |
JPS63246032A (ja) * | 1987-03-31 | 1988-10-13 | Sony Corp | Ad変換回路 |
JPH02131359A (ja) * | 1988-11-04 | 1990-05-21 | Nec Corp | Dc−dcコンバータ回路 |
EP0466532A1 (fr) * | 1990-06-21 | 1992-01-15 | STMicroelectronics S.A. | Dispositif à pompes de charges à phases imbriquées |
US5051881A (en) * | 1990-07-05 | 1991-09-24 | Motorola, Inc. | Voltage multiplier |
WO1992003871A1 (fr) * | 1990-08-25 | 1992-03-05 | Deutsche Thomson-Brandt Gmbh | Generateur de tensions a amplitudes couplees |
EP0492538A2 (fr) * | 1990-12-20 | 1992-07-01 | Nec Corporation | Circuit d'interface comprenant un convertisseur continu-continu |
JPH0614527A (ja) * | 1992-06-26 | 1994-01-21 | Nec Corp | 半導体集積回路 |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 13, no. 53 (E - 713) 7 February 1989 (1989-02-07) * |
PATENT ABSTRACTS OF JAPAN vol. 14, no. 368 (E - 0962) 9 August 1990 (1990-08-09) * |
PATENT ABSTRACTS OF JAPAN vol. 18, no. 218 (E - 1539) 19 April 1994 (1994-04-19) * |
Also Published As
Publication number | Publication date |
---|---|
US5475335A (en) | 1995-12-12 |
KR960702944A (ko) | 1996-05-23 |
DE69530894T2 (de) | 2004-03-11 |
DE69530894D1 (de) | 2003-07-03 |
US5786617A (en) | 1998-07-28 |
EP0701737B1 (fr) | 2003-05-28 |
KR100351525B1 (ko) | 2002-12-26 |
EP0701737A1 (fr) | 1996-03-20 |
US5622885A (en) | 1997-04-22 |
WO1995027310A1 (fr) | 1995-10-12 |
EP0921627A2 (fr) | 1999-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0921627A3 (fr) | Pompe de charge de haute tension avec des transistors du type de basse tension | |
KR101106483B1 (ko) | 피보나치 급수를 지닌 전하 펌프 | |
EP0303193A2 (fr) | Dispositif de circuit pour semi-conducteur intégré | |
EP0866555A3 (fr) | Circuit de retard et oscillateur l'utilisant | |
US6437720B1 (en) | Code independent charge transfer scheme for switched-capacitor digital-to-analog converter | |
EP0822478A2 (fr) | Circuit convertisseur de tension et circuit générateur de horloge multiphase | |
TW343325B (en) | LCD drive circuit | |
CA2111945A1 (fr) | Multiplicateur analogique utilisant une cellule a quatre ou a huit branchements | |
ITRM20010407A1 (it) | Convertitore analogico/digitale ad alta velocita', alta risoluzione ebasso consumo con ingresso single-ended. | |
EP0902525A3 (fr) | Procédé et dispositif pour réduire les pics de courant de l'alimentation de puissance dans une pompe de charge en utilisant un signal d'horloge décalé | |
EP0174694A1 (fr) | Circuit générant une tension de polarisation de substrat | |
EP1191698A3 (fr) | Convertisseur A/N du type à réseau de capacités avec décodeur thermométrique et réseau de capacités | |
US4542301A (en) | Clock pulse generating circuit | |
EP0383549A3 (fr) | Oscillateur en anneau | |
EP0741460A3 (fr) | Circuit de référence pour les comparateurs dans un convertisseur analogique-numérique | |
EP1041705A3 (fr) | Circuit de pompe de charge | |
EP0889589A3 (fr) | Circuit oscillateur commandé en tension | |
US4656574A (en) | Logic signal multiplier circuit | |
EP0766402A3 (fr) | Circuit compteur | |
EP0939445A3 (fr) | Dispositif de circuit intégré à semi-conducteur et le procédé d'arrangement de cellule fonctionnelle | |
EP0792023A3 (fr) | Convertisseur analogique-numérique à haut débit et à haute précision | |
EP0871296A3 (fr) | Multiplexeur utilisant des circuits de verrouillage dynamiques | |
JPH01200720A (ja) | アナログカウンタ回路 | |
DE3268474D1 (en) | Drive circuits for driving digital circuits with a clock signal | |
EP0347048A3 (fr) | Circuit d'attaque différentiel CMOS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AC | Divisional application: reference to earlier application |
Ref document number: 701737 Country of ref document: EP |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE GB |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE GB |
|
17P | Request for examination filed |
Effective date: 20000320 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20011002 |