CN103545365B - 用于静电保护的高压nldmos结构 - Google Patents
用于静电保护的高压nldmos结构 Download PDFInfo
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- CN103545365B CN103545365B CN201210240391.5A CN201210240391A CN103545365B CN 103545365 B CN103545365 B CN 103545365B CN 201210240391 A CN201210240391 A CN 201210240391A CN 103545365 B CN103545365 B CN 103545365B
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- 230000016507 interphase Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210240391.5A CN103545365B (zh) | 2012-07-12 | 2012-07-12 | 用于静电保护的高压nldmos结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210240391.5A CN103545365B (zh) | 2012-07-12 | 2012-07-12 | 用于静电保护的高压nldmos结构 |
Publications (2)
Publication Number | Publication Date |
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CN103545365A CN103545365A (zh) | 2014-01-29 |
CN103545365B true CN103545365B (zh) | 2015-12-02 |
Family
ID=49968639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210240391.5A Active CN103545365B (zh) | 2012-07-12 | 2012-07-12 | 用于静电保护的高压nldmos结构 |
Country Status (1)
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CN (1) | CN103545365B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409454B (zh) * | 2014-11-10 | 2017-08-01 | 无锡友达电子有限公司 | 一种nldmos防静电保护管 |
CN105244349B (zh) * | 2015-10-27 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 静电保护电路 |
CN107068674B (zh) * | 2016-12-29 | 2019-04-02 | 北京时代民芯科技有限公司 | 一种面积高效的抗单粒子闩锁加固版图结构 |
CN108321156B (zh) * | 2017-12-27 | 2021-03-19 | 杰华特微电子(杭州)有限公司 | 一种半导体器件的静电防护方法及半导体器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5786617A (en) * | 1994-04-01 | 1998-07-28 | National Semiconductor Corporation | High voltage charge pump using low voltage type transistors |
CN202172069U (zh) * | 2011-08-25 | 2012-03-21 | 上海华虹Nec电子有限公司 | 具有静电保护功能的器件结构 |
-
2012
- 2012-07-12 CN CN201210240391.5A patent/CN103545365B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5786617A (en) * | 1994-04-01 | 1998-07-28 | National Semiconductor Corporation | High voltage charge pump using low voltage type transistors |
CN202172069U (zh) * | 2011-08-25 | 2012-03-21 | 上海华虹Nec电子有限公司 | 具有静电保护功能的器件结构 |
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Publication number | Publication date |
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CN103545365A (zh) | 2014-01-29 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |