EP0847835A1 - Procédé et dispositif pour le polissage des plaquettes semiconductrices - Google Patents

Procédé et dispositif pour le polissage des plaquettes semiconductrices Download PDF

Info

Publication number
EP0847835A1
EP0847835A1 EP97121841A EP97121841A EP0847835A1 EP 0847835 A1 EP0847835 A1 EP 0847835A1 EP 97121841 A EP97121841 A EP 97121841A EP 97121841 A EP97121841 A EP 97121841A EP 0847835 A1 EP0847835 A1 EP 0847835A1
Authority
EP
European Patent Office
Prior art keywords
polishing
pressure
carrier plate
pressure chambers
semiconductor wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97121841A
Other languages
German (de)
English (en)
Other versions
EP0847835B1 (fr
Inventor
Paul Müller
Thomas Buschhardt
Heinrich Hennhöfer
Norbert Sickmann
Rainer Neumann
Franz Mangs
Manfred Thurner
Klaus Dr. Röttger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0847835A1 publication Critical patent/EP0847835A1/fr
Application granted granted Critical
Publication of EP0847835B1 publication Critical patent/EP0847835B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Definitions

  • the invention relates to a method for polishing Semiconductor wafers on a front side of a carrier plate are fixed and with a polishing pot Side surface against a polishing plate covered with a polishing cloth pressed and polished with a certain polishing pressure will.
  • the invention also relates to a device which is suitable for carrying out the method.
  • planarization of a semiconductor wafer using a chemo-mechanical Polishing is an important processing step in the process flow for the production of a flat, defect-free and smooth semiconductor wafer.
  • This polishing step provides the final form in many production processes and thus decisively determining the surface properties Step before reusing the semiconductor wafer as raw material for the production of electrical, electronic and microelectronic components.
  • Objectives of Polishing processes are particularly high Flatness and parallelism of the two disc sides, the removal pretreatment of damaged surface layers ("damage removal") and the reduction of the microroughness of the Semiconductor wafer.
  • the present invention relates to single-sided polishing a group of several semiconductor wafers ("single side batch polishing ").
  • the semiconductor wafers are at this procedure with one side on the front of one Carrier plate mounted by between the side and the Carrier plate a positive and non-positive connection, for example by adhesion, gluing, kitten or vacuum application, will be produced.
  • the semiconductor wafers mounted on the support plate so that it is a pattern of concentric rings. After assembly the free sides of the disc with the addition of a polishing agent against a polishing plate over which a polishing cloth is stretched is pressed and polished with a certain polishing pressure.
  • polishing plate The carrier plate and the polishing plate are usually used rotated at different speeds.
  • the necessary Polishing printing is done by a pressure stamp, which follows Polishing pot ("polishing head") is called on the back transferred to the carrier plate.
  • Polishing pot Polishing pot
  • a variety of used Polishing machines are designed to span multiple Have polishing pots and, accordingly, several carrier plates be able to record.
  • the polishing pressure therefore often does not work evenly on the semiconductor wafer because the carrier plate radially deformed during polishing by its own weight is or a certain, production-related radial Has wedges. Differences can occur with identical polishing pots occur in the transfer of the polishing pressure so that also the influence of the polishing pot used on the polishing result noticeable. Sometimes there is an emerging one Wear of the polishing cloth cause that the wheel geometry in the course of several polishing runs worsened.
  • the present invention solves the problem in polishing of semiconductor wafers with a one-side polishing machine to achieve improved uniformity of the polishing removal, so that in particular the wedge shape of the polished semiconductor wafers is low.
  • the success of the invention is due to the fact that arranged between the polishing pot and the support plate Pressure chambers local pressure differences, for example as a result of bumps on the back of the carrier plate or result in an elastic deformation of the carrier plate would have compensated.
  • the one pressurized Pressure chamber transmitted to the support plate pressure has at any point in the circumferential direction on the carrier plate resting, elastic support surface the same Value.
  • a particular advantage of the invention results from that the pressure chambers that are pressurized preferably selected automatically and automatically with Pressure. Individual, depending on the polishing result impacting properties of the carrier plates used and used polishing pots can with this selection be taken into account.
  • Figure 1 is a preferred embodiment of the claimed device shown. They are just such Features shown that are necessary to describe the invention are.
  • Figures 2a, 2b and 3a, 3b schematically show that Principle of minimizing the wedge when polishing semiconductor wafers according to the invention.
  • FIG. 1 is a preferred one Embodiment of a device for performing the Procedure shows.
  • the to a carrier plate 1 of a polishing machine facing side of a polishing pot 2 has open channels 3 on that in concentric paths parallel to the circumferential line the carrier plate.
  • the illustrated The device is equipped with a total of seven pressure chambers. If a pressure chamber is pressurized by it is filled with a gas or a liquid, so presses a support surface 5 facing the support plate Pressure chamber against the back 6 of the carrier plate.
  • the polishing pot 2 is equipped with a vacuum tool 14, with whose help the carrier plate 1 by applying a vacuum V can be sucked in.
  • the for filling the pressure chambers with Gas or liquid lines through the polishing pot are not shown in the figure.
  • the loading a pressure chamber with pressure is also referred to as “switching on the pressure chamber “and the reverse process as” switching off a pressure chamber ".
  • the number of the provided Pressure chambers depend on the diameter of the used carrier plate and according to the width of the contact surface a pressure chamber.
  • Preferably 2 to 10 are particularly preferred 2 to 7 pressure chambers are used, their contact surfaces when the pressure chambers are switched on 10 to 220 mm, especially are preferably 10 to 30 mm wide.
  • the level of pressure in on Pressure chambers are preferably chosen so that the polishing pot under no circumstances during the polishing of the semiconductor wafers overcome the gap and damage the carrier plate can. Lowering the polishing pot is particularly preferred to prevent up to the carrier plate by a mechanical barrier. In the exemplary embodiment according to FIG. 1, this is Purpose a stopper 15 integrated in the polishing pot, by the Never effect the height of the gap 7 below a minimum value can sink. Mechanical damage to the carrier plate, which can cause a deterioration in the polishing result, this is safely avoided.
  • the device further comprises a system of controllable Valves 8 through which each pressure chamber independently of the rest Pressure chambers can be switched on and off and that the possibility provides for pressure equalization between switched on To reach pressure chambers. Is particularly preferred it to continue to provide a host computer 9, the switching on and switching off the pressure chambers controls fully automatically.
  • This master computer is used after a polishing run determined values of the disk geometry, for example with the determined wedge values. Calculated from this the number and position of the pressure chambers to be switched on and causes that the corresponding pressure chambers are switched on automatically or be switched off. It is preferred that the Master computer in the calculation also the influence on the The polishing result is taken into account by the carrier plate used and the polishing pot used in each case by manufacturing-related Peculiarities.
  • An identification of the for Coming carrier plates and polishing pots can be used, for example by means of a barcode recognition.
  • the host computer accesses a database in which Offset presets are stored that specify which pressure chambers when using a specific carrier plate or a certain polishing pot or a certain combination of the carrier plate and polishing pot must be switched on or off.
  • the offset presets become automatic at regular intervals Evaluation of the polishing result of several previous ones Polishing trips updated.
  • the control is done automatically by the master computer 9, which is connected to a measuring device 16.
  • the host computer continuously records the actual height of the gap 7 and compares it this with the selected target distance. Is the actual height outside of specified lower and upper limit values with the help of the host computer, the pressure in the pressure chambers 4 changed, so that the polishing pot is raised or lowered until the actual height of the gap 7 in the desired tolerance range lies. Preferred values for the upper and lower limits the tolerance range is 4.2 mm or 3.8 mm.
  • the polishing print is preferably with the help of pressure pads 17th set.
  • FIG. 2a shows schematically, as by the process in particular can be achieved the polishing result in terms of the wedge shape of polished semiconductor wafers to improve.
  • the situation is indicated in FIG. 2a, that polished semiconductor wafers 10a that on the front 11 of a carrier plate 1 are mounted and against one with a Polishing cloth covered polishing plate 13 with a certain Polishing pressure has been pressed and polished, are wedge-shaped.
  • the Dikke the semiconductor wafers take towards the center of the carrier plate down, which is why you are from a positive taper speaks.
  • FIG. 3a The illustrated Semiconductor wafers 10 are negatively wedge-shaped.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manipulator (AREA)
EP97121841A 1996-12-12 1997-12-11 Procédé et dispositif pour le polissage des plaquettes semiconductrices Expired - Lifetime EP0847835B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19651761 1996-12-12
DE19651761A DE19651761A1 (de) 1996-12-12 1996-12-12 Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
EP0847835A1 true EP0847835A1 (fr) 1998-06-17
EP0847835B1 EP0847835B1 (fr) 2001-07-25

Family

ID=7814521

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97121841A Expired - Lifetime EP0847835B1 (fr) 1996-12-12 1997-12-11 Procédé et dispositif pour le polissage des plaquettes semiconductrices

Country Status (8)

Country Link
US (1) US5980361A (fr)
EP (1) EP0847835B1 (fr)
JP (1) JP3150933B2 (fr)
KR (1) KR100278027B1 (fr)
CN (1) CN1123423C (fr)
DE (2) DE19651761A1 (fr)
SG (1) SG60162A1 (fr)
TW (1) TW411525B (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999016580A1 (fr) * 1997-09-26 1999-04-08 Memc Electronic Materials, Inc. Appareil de traitement de plaquettes
WO1999033613A1 (fr) * 1997-12-31 1999-07-08 Applied Materials, Inc. Tete de support comprenant une membrane souple et un element de renfort deformable destinee a un appareil de polissage mecanique chimique
EP0967048A1 (fr) * 1998-06-22 1999-12-29 Speedfam Co., Ltd. Appareil de polissage double face
US6114245A (en) * 1997-08-21 2000-09-05 Memc Electronic Materials, Inc. Method of processing semiconductor wafers
WO2000051782A1 (fr) * 1999-03-03 2000-09-08 Mitsubishi Materials Corporation Appareil et procede destines au polissage chimio-mecanique et utilisant une tete munie d'un systeme pneumatique direct de polissage par pression de pastilles
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
WO2001074534A2 (fr) * 2000-03-31 2001-10-11 Speedfam-Ipec Corporation Support de piece a zones de pression et barrieres reglables
WO2001087541A2 (fr) * 2000-05-12 2001-11-22 Multi-Planar Technologies, Inc. Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches
EP1182007A1 (fr) * 2000-08-18 2002-02-27 Fujikoshi Machinery Corporation Tête de support avec anneau élastique
US6861360B2 (en) 2001-12-06 2005-03-01 Siltronic Ag Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers
US6966822B2 (en) 2000-05-12 2005-11-22 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US7140956B1 (en) 2000-03-31 2006-11-28 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
WO2007123576A1 (fr) * 2006-01-17 2007-11-01 Mks Instruments, Inc. Regulation de la pression dans des zones eloignees
DE102015224933A1 (de) 2015-12-11 2017-06-14 Siltronic Ag Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
DE19756536A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren zum Polieren von scheibenförmigen Werkstücken und Vorrichtung zur Durchführung des Verfahrens
US5925576A (en) * 1998-08-19 1999-07-20 Promos Technologies, Inc. Method and apparatus for controlling backside pressure during chemical mechanical polishing
CN1080619C (zh) * 1998-08-28 2002-03-13 台湾积体电路制造股份有限公司 化学机械研磨机台
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
KR100802866B1 (ko) * 2000-05-01 2008-02-12 후지쯔 가부시끼가이샤 웨이퍼 연마 장치 및 웨이퍼 연마 방법
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
AU2001266742A1 (en) * 2000-06-08 2001-12-17 Speed-Fam-Ipec Corporation Orbital polishing apparatus
CN1460042A (zh) * 2000-07-31 2003-12-03 Asml美国公司 基板的化学机械抛光装置和方法
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
US6527625B1 (en) 2000-08-31 2003-03-04 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a soft backed polishing head
DE10210023A1 (de) * 2002-03-07 2003-05-28 Wacker Siltronic Halbleitermat Siliciumscheibe und Verfahren zu ihrer Herstellung
US6846222B2 (en) * 2003-03-04 2005-01-25 Hitachi Global Storage Technologies Netherlands, B.V. Multi-chambered, compliant apparatus for restraining workpiece and applying variable pressure thereto during lapping to improve flatness characteristics of workpiece
US20060180486A1 (en) * 2003-04-21 2006-08-17 Bennett David W Modular panel and storage system for flat items such as media discs and holders therefor
KR100600231B1 (ko) * 2003-07-12 2006-07-13 동부일렉트로닉스 주식회사 씨엠피 폴리싱 헤드 및 그 동작방법
US20050070205A1 (en) * 2003-09-30 2005-03-31 Speedfam-Ipec Corporation Integrated pressure control system for workpiece carrier
US6986359B2 (en) 2004-03-09 2006-01-17 Mks Instruments, Inc. System and method for controlling pressure in remote zones
US20060138681A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Substrate and lithography process using the same
US7984002B2 (en) * 2005-04-29 2011-07-19 Charles River Analytics, Inc. Automatic source code generation for computing probabilities of variables in belief networks
US7207871B1 (en) * 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
US20070167110A1 (en) * 2006-01-16 2007-07-19 Yu-Hsiang Tseng Multi-zone carrier head for chemical mechanical polishing and cmp method thereof
JP5408789B2 (ja) * 2009-03-06 2014-02-05 エルジー・ケム・リミテッド フロートガラス研磨システム
DE102010005904B4 (de) * 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
JP5303491B2 (ja) * 2010-02-19 2013-10-02 信越半導体株式会社 研磨ヘッド及び研磨装置
CN101797714B (zh) * 2010-03-23 2012-07-11 中国电子科技集团公司第四十五研究所 抛光机晶片在线清洗装置
KR200471472Y1 (ko) * 2013-09-30 2014-03-12 전용준 상부 공압제어 어셈블리가 상부에 착·탈 가능하게 장착된 씨엠피
US10328549B2 (en) 2013-12-11 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing head, chemical-mechanical polishing system and method for polishing substrate
TWI658899B (zh) * 2014-03-31 2019-05-11 日商荏原製作所股份有限公司 研磨裝置及研磨方法
JP5608310B1 (ja) * 2014-04-08 2014-10-15 株式会社ミラノ製作所 研磨盤及び研磨機
CN106312797B (zh) * 2016-09-21 2019-05-17 中国科学院上海光学精密机械研究所 调节光学元件边缘区域压强分布的抛光组件
US11320843B2 (en) * 2019-10-17 2022-05-03 Dongguan Hesheng Machinery & Electric Co., Ltd. Air compression system with pressure detection
WO2021262755A1 (fr) 2020-06-24 2021-12-30 Applied Materials, Inc. Tête de support de polissage avec commande de pression piézoélectrique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264572A1 (fr) * 1986-08-19 1988-04-27 Mitsubishi Kinzoku Kabushiki Kaisha Machine de polissage
DE3801969A1 (de) * 1988-01-23 1989-07-27 Zeiss Carl Fa Verfahren und vorrichtung zum laeppen bzw. polieren optischer flaechen
EP0650806A1 (fr) * 1993-10-28 1995-05-03 Kabushiki Kaisha Toshiba Dispositif de polissage pour plaquette semi-conductrice

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2809274A1 (de) * 1978-03-03 1979-09-13 Wacker Chemitronic Verfahren zur vergleichmaessigung des polierabtrages von scheiben beim polieren
JPH04278475A (ja) * 1990-12-26 1992-10-05 Internatl Business Mach Corp <Ibm> 先読みパターン発生及びシミュレーションの方法及びシステム
JP3370112B2 (ja) * 1992-10-12 2003-01-27 不二越機械工業株式会社 ウエハーの研磨装置
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
US5624299A (en) * 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置
JP3072962B2 (ja) * 1995-11-30 2000-08-07 ロデール・ニッタ株式会社 研磨のための被加工物の保持具及びその製法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264572A1 (fr) * 1986-08-19 1988-04-27 Mitsubishi Kinzoku Kabushiki Kaisha Machine de polissage
DE3801969A1 (de) * 1988-01-23 1989-07-27 Zeiss Carl Fa Verfahren und vorrichtung zum laeppen bzw. polieren optischer flaechen
EP0650806A1 (fr) * 1993-10-28 1995-05-03 Kabushiki Kaisha Toshiba Dispositif de polissage pour plaquette semi-conductrice

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114245A (en) * 1997-08-21 2000-09-05 Memc Electronic Materials, Inc. Method of processing semiconductor wafers
WO1999016580A1 (fr) * 1997-09-26 1999-04-08 Memc Electronic Materials, Inc. Appareil de traitement de plaquettes
US6277009B1 (en) 1997-12-31 2001-08-21 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
WO1999033613A1 (fr) * 1997-12-31 1999-07-08 Applied Materials, Inc. Tete de support comprenant une membrane souple et un element de renfort deformable destinee a un appareil de polissage mecanique chimique
US6080050A (en) * 1997-12-31 2000-06-27 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
EP0967048A1 (fr) * 1998-06-22 1999-12-29 Speedfam Co., Ltd. Appareil de polissage double face
US7311586B2 (en) 1999-03-03 2007-12-25 Ebara Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
WO2000051782A1 (fr) * 1999-03-03 2000-09-08 Mitsubishi Materials Corporation Appareil et procede destines au polissage chimio-mecanique et utilisant une tete munie d'un systeme pneumatique direct de polissage par pression de pastilles
US6368189B1 (en) 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US7029382B2 (en) 1999-03-03 2006-04-18 Ebara Corporation Apparatus for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
EP1437197A1 (fr) * 1999-03-03 2004-07-14 Mitsubishi Materials Corporation Appareil et procédé destinés au polissage chimio-mécanique et utilisant une tête munie d'un système pneumatique direct de polissage de pastilles par pression
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
WO2001074534A2 (fr) * 2000-03-31 2001-10-11 Speedfam-Ipec Corporation Support de piece a zones de pression et barrieres reglables
US6612903B2 (en) 2000-03-31 2003-09-02 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
US6659850B2 (en) 2000-03-31 2003-12-09 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
GB2376908A (en) * 2000-03-31 2002-12-31 Speed Fam Ipec Corp A workpiece carrier with adjustable pressure zones and barriers
WO2001074534A3 (fr) * 2000-03-31 2002-02-07 Speedfam Ipec Corp Support de piece a zones de pression et barrieres reglables
US7140956B1 (en) 2000-03-31 2006-11-28 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
WO2001087541A2 (fr) * 2000-05-12 2001-11-22 Multi-Planar Technologies, Inc. Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches
WO2001087541A3 (fr) * 2000-05-12 2002-03-28 Multi Planar Technologies Inc Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches
US6966822B2 (en) 2000-05-12 2005-11-22 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
EP1182007A1 (fr) * 2000-08-18 2002-02-27 Fujikoshi Machinery Corporation Tête de support avec anneau élastique
US6861360B2 (en) 2001-12-06 2005-03-01 Siltronic Ag Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US8689822B2 (en) 2004-03-09 2014-04-08 Mks Instruments, Inc. Pressure regulation in remote zones
WO2007123576A1 (fr) * 2006-01-17 2007-11-01 Mks Instruments, Inc. Regulation de la pression dans des zones eloignees
GB2446358A (en) * 2006-01-17 2008-08-06 Mks Instr Inc Pressure regulation in remote zones
GB2446358B (en) * 2006-01-17 2011-05-04 Mks Instr Inc Pressure regulation in remote zones
DE102015224933A1 (de) 2015-12-11 2017-06-14 Siltronic Ag Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe
WO2017097670A1 (fr) 2015-12-11 2017-06-15 Siltronic Ag Plaquette de semi-conducteur monocristallin et procédé de production d'une plaquette de semi-conducteur
US11075070B2 (en) 2015-12-11 2021-07-27 Siltronic Ag Monocrystalline semiconductor wafer and method for producing a semiconductor wafer

Also Published As

Publication number Publication date
US5980361A (en) 1999-11-09
SG60162A1 (en) 1999-02-22
JPH10180617A (ja) 1998-07-07
DE59704120D1 (de) 2001-08-30
DE19651761A1 (de) 1998-06-18
CN1185028A (zh) 1998-06-17
KR100278027B1 (ko) 2001-02-01
TW411525B (en) 2000-11-11
CN1123423C (zh) 2003-10-08
JP3150933B2 (ja) 2001-03-26
KR19980063896A (ko) 1998-10-07
EP0847835B1 (fr) 2001-07-25

Similar Documents

Publication Publication Date Title
EP0847835B1 (fr) Procédé et dispositif pour le polissage des plaquettes semiconductrices
DE69618437T2 (de) Verfahren und Vorrichtung zum Polieren von Werkstücken
DE69419012T2 (de) Halbleiterscheibe polierverfahren und -vorrichtung
DE69611851T2 (de) Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates
DE112016005417B4 (de) Waferpolierverfahren
DE3112019C2 (fr)
EP0916450B1 (fr) Procédé et dispositif pour le polissage de plaquettes semiconductrices
DE60024559T2 (de) Verfahren und Gerät zum Polieren eines Werkstückes
DE112009002112B4 (de) Polierkopf und Poliervorrichtung
DE112012001943B4 (de) Verfahren zum Einstellen der Höhenposition eines Polierkopfs und Verfahren zum Polieren eines Werkstücks
DE60018019T2 (de) Werkstückhalter und Poliervorrichtung mit demselben
DE10393369T5 (de) Poliervorrichtung, Polierkopf und Polierverfahren
DE69634144T2 (de) Verfahren und Vorrichtung zum Polieren von Werkstücken
DE2132174A1 (de) Verfahren und Vorrichtung zum Herstellen eines dielektrisch isolierten Halbleitergebildes
DE69504549T2 (de) Gerät zum Polieren von Wafers
DE112008002802T5 (de) Polierkopf und diesen aufweisende Poliervorrichtung
DE112019002513T5 (de) Polierkopf, diesen verwendende wafer-poliereinrichtung und diesen verwendendes wafer-polierverfahren
DE102015113315A1 (de) Waferpoliervorrichtung und -verfahren
DE112012002411T5 (de) Polierkopf, Poliervorrichtung und Verfahren zum Polieren eines Werkstücks
DE112015000336T5 (de) Werkstückbearbeitungsvorrichtung und Werkstückbearbeitungsverfahren
DE112013006059B4 (de) Doppelseiten-Poliermaschine mit einer Trägerplattenparallelitätssteuerung
DE2441976A1 (de) Verfahren und vorrichtung zum herstellen von schmidt-korrekturlinsen
DE112007003705T5 (de) Polierkopf, Poliervorrichtung und Verfahren zum Ablösen eines Werkstücks
DE102009052070A1 (de) Vorrichtung und Verfahren zur Doppelseitenbearbeitung flacher Werkstücke
DE112016005222B4 (de) Waferpolierverfahren und -vorrichtung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19971211

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB IT

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

AKX Designation fees paid

Free format text: DE GB IT

RBV Designated contracting states (corrected)

Designated state(s): DE GB IT

17Q First examination report despatched

Effective date: 19991201

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT

REF Corresponds to:

Ref document number: 59704120

Country of ref document: DE

Date of ref document: 20010830

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20011025

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20011122

Year of fee payment: 5

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20021211

GBPC Gb: european patent ceased through non-payment of renewal fee
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20051211

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20161213

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 59704120

Country of ref document: DE