WO2001087541A3 - Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches - Google Patents

Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches Download PDF

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Publication number
WO2001087541A3
WO2001087541A3 PCT/US2001/015306 US0115306W WO0187541A3 WO 2001087541 A3 WO2001087541 A3 WO 2001087541A3 US 0115306 W US0115306 W US 0115306W WO 0187541 A3 WO0187541 A3 WO 0187541A3
Authority
WO
WIPO (PCT)
Prior art keywords
plate
pressure control
same
retaining ring
pneumatic diaphragm
Prior art date
Application number
PCT/US2001/015306
Other languages
English (en)
Other versions
WO2001087541A2 (fr
Inventor
Jiro Kajiwara
Gerard S Moloney
Huey-Ming Wang
David A Hansen
Alejandro Reyes
Original Assignee
Multi Planar Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/570,370 external-priority patent/US6506105B1/en
Priority claimed from US09/570,369 external-priority patent/US6558232B1/en
Application filed by Multi Planar Technologies Inc filed Critical Multi Planar Technologies Inc
Priority to AU2001259745A priority Critical patent/AU2001259745A1/en
Priority to EP01933311A priority patent/EP1284840A2/fr
Priority to JP2001583983A priority patent/JP2003533359A/ja
Priority to KR1020027015207A priority patent/KR100811172B1/ko
Publication of WO2001087541A2 publication Critical patent/WO2001087541A2/fr
Publication of WO2001087541A3 publication Critical patent/WO2001087541A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention porte sur un appareil et un procédé de planarisation d'un substrat. L'appareil (101) comporte un support (106) comprenant: une plaque (261) portant un substrat (230); une première chambre (297) ramenant la plaque dans une direction prédéterminée; une entretoise (260) liée au bord extérieur (282) de la plaque; une membrane (250) liée à la plaque via l'entretoise et séparée de la plaque par l'épaisseur de l'entretoise; et une deuxième chambre (298) comprise entre la membrane et la plaque et ramenant la membrane dans une autre direction prédéterminée. Le procédé consiste à presser le bord périphérique du substrat (113) contre un tampon à polir avec une première pression et à presser l'intérieur du substrat contre le tampon avec une deuxième pression. La première pression peut être exercée par un contact mécanique avec le bord périphérique du substrat (113), ou par une membrane (250), ou par un gaz pressant directement sur une partie du substrat.
PCT/US2001/015306 2000-05-12 2001-05-11 Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches WO2001087541A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2001259745A AU2001259745A1 (en) 2000-05-12 2001-05-11 System and method for pneumatic diaphragm cmp head having separate retaining ring and multi-region wafer pressure control
EP01933311A EP1284840A2 (fr) 2000-05-12 2001-05-11 Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches
JP2001583983A JP2003533359A (ja) 2000-05-12 2001-05-11 独立のリテーナリングと多領域圧力制御とを備えた空気圧ダイアフラムヘッドおよび該空気圧ダイアフラムヘッドを用いた方法
KR1020027015207A KR100811172B1 (ko) 2000-05-12 2001-05-11 독립적인 리테이닝 링 및 다중영역 압력제어부를 구비한공압식 다이어프램 헤드, 그리고 이를 이용하는 방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US20421200P 2000-05-12 2000-05-12
US60/204,212 2000-05-12
US09/570,370 2000-05-12
US09/570,370 US6506105B1 (en) 2000-05-12 2000-05-12 System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US09/570,369 US6558232B1 (en) 2000-05-12 2000-05-12 System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US09/570,369 2000-05-12

Publications (2)

Publication Number Publication Date
WO2001087541A2 WO2001087541A2 (fr) 2001-11-22
WO2001087541A3 true WO2001087541A3 (fr) 2002-03-28

Family

ID=27394636

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/015306 WO2001087541A2 (fr) 2000-05-12 2001-05-11 Systeme et procede de planarisation chimicomecanique par tete a membrane pneumatique comportant un anneau de maintien et une commande de pression separee pour differentes zones des tranches

Country Status (6)

Country Link
EP (1) EP1284840A2 (fr)
JP (1) JP2003533359A (fr)
KR (1) KR100811172B1 (fr)
CN (2) CN100433269C (fr)
AU (1) AU2001259745A1 (fr)
WO (1) WO2001087541A2 (fr)

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KR100811172B1 (ko) 2008-03-10
AU2001259745A1 (en) 2001-11-26
CN1638057A (zh) 2005-07-13
EP1284840A2 (fr) 2003-02-26
CN1179821C (zh) 2004-12-15
CN100433269C (zh) 2008-11-12
JP2003533359A (ja) 2003-11-11
KR20030010621A (ko) 2003-02-05
CN1440321A (zh) 2003-09-03
WO2001087541A2 (fr) 2001-11-22

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