KR19980063896A - 반도체웨이퍼의 연마방법 및 그 장치 - Google Patents
반도체웨이퍼의 연마방법 및 그 장치 Download PDFInfo
- Publication number
- KR19980063896A KR19980063896A KR1019970066694A KR19970066694A KR19980063896A KR 19980063896 A KR19980063896 A KR 19980063896A KR 1019970066694 A KR1019970066694 A KR 1019970066694A KR 19970066694 A KR19970066694 A KR 19970066694A KR 19980063896 A KR19980063896 A KR 19980063896A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- pressure
- support plate
- semiconductor wafer
- pressure chambers
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 126
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000004744 fabric Substances 0.000 claims abstract description 9
- 238000012546 transfer Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 55
- 238000012360 testing method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manipulator (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
연마헤드 1 연마헤드 2 | |
대 비테스트순서 A | 0.7 0.60.3 0.4 |
연마헤드 1 연마헤드 2 연마헤드 3 연마헤드 4 | |
테스트순서 B -테스트순서 B+ | -0.2 -1 0.5 0.2-0.1 0.2 -0.1 0.2 |
연마헤드 1 연마헤드 2 연마헤드 3 연마헤드 4 | |
테스트순서 C -테스트순서 C+ | 0.5 -0.1 0.1 00.1 -0.1 0.1 0 |
Claims (12)
- 지지판(support plate)의 앞면에 설정하며, 그 지지판의 한쪽면을 , 연마천으로 커버한 연마판(polishing plate)에 대하여 소정의 연마압력으로 가압시켜 연마하는 반도체 웨이퍼의 연마방법에 있어서,a) 그 반도체웨이퍼를 연마하기전에 다수의 압력체임버중 최소한 하나에 소정의 압력을 가하여,b) 그 반도체웨이퍼를 연마할 때, 압력을 가한 압력체임버의 탄성 베어링변(elastic bearing suface)을 통하여 지지판의 배면으로 그 연마압력을 전달시킴을 특징으로 하는 방법.
- 제 1 항에 있어서,압력을 가한 압력체임버 사이의 압력보상은 압력을 다수의 압력체임버에 가할 때 실시함을 특징으로 하는 방법.
- 제 1 항 또는 제 2 항에 있어서,압력을 가한 압력체임버는 연마통과전에, 컴퓨터의 도움으로 자동 선택함을 특징으로 하는 방법.
- 제 3 항에 있어서,그 압력체임버를 선택할때에는 사용한 지지판과 설치한 연마헤드의 압력체임버의 사전선택을 예비결정하는 오프셋을 산정(account)함을 특징으로 하는 방법.
- 제 1 항에 있어서,연마헤드와 지지판의 배면사이에서 갭의 높이는 소정의 공차범위내에서 유지하기 위하여 연마할 때 자동 제어함을 특징으로 하는 방법.
- 제 5 항에 있어서,기계적 배리어(mechanical barrier)가 최저치 이하로 저하시킬 수 있는 갭의 높이를 방지함을 특징으로 하는 방법.
- 배면과 앞면을 구비한 지지판과, 연마할 때 지지판의 앞면에 고정시킨 반도체웨이퍼를 연마천으로 커버한 연마판에 대하여 소정의 연마압력으로 가압하는 연마헤드를 구성하는 반도체웨이퍼의 연마장치에 있어서,a) 각각 압력을 가할 수 있고, 그 지지판의 배면쪽으로 대향하는 연마헤드의 한쪽면에 동축통로(concentric path)를 배치하고, 그 반도체웨이퍼를 연마할 때 압력을 그 결합압력체임버에 가할때까지 그 지지판의 배면으로 연마압력을 전달하는 탄성 베아링면(elastic bearing surfaces)을 구비한 다수의 압력 체임버와,b) 그 압력 체임버에 압력을 가하는 장치를 구성함을 특징으로 하는 연마장치.
- 제 7 항에 있어서,압력을 가하는 압력체임버 사이에는 압력보상을 실시하는 장치를 구비함을 특징으로 하는 연마장치.
- 제 7 항에 있어서,2~10 개의 압력체임버는 폭 10-220mm 의 베아링면을 구비함을 특징으로 하는 연마장치.
- 제 7 항에 있어서,연마통과전에, 압력을 가하도록 하는 압력체임버를 선택하여, 이들의 압력체임버에 압력을 자동가압하는 마스터 컴퓨터(master computer)를 구비함을 특징으로 하는 연마장치.
- 제 7 항에 있어서,기계적 배리어를 구비시켜, 그 기계적 베리어의 작동으로 연마헤드와 지지판의 배면 사이의 갭이 최저치 이하로 저하되지 않도록 함을 특징으로 하는 연마장치.
- 제 7 항에 있어서,연마헤드와 지지판 배면사이에서 갭의 높이를 제어하는 컴퓨터 제어시스템을 구비함을 특징으로 하는 연마장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19651761.3 | 1996-12-12 | ||
DE19651761A DE19651761A1 (de) | 1996-12-12 | 1996-12-12 | Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980063896A true KR19980063896A (ko) | 1998-10-07 |
KR100278027B1 KR100278027B1 (ko) | 2001-02-01 |
Family
ID=7814521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970066694A KR100278027B1 (ko) | 1996-12-12 | 1997-12-08 | 반도체웨이퍼의연마방법및그장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5980361A (ko) |
EP (1) | EP0847835B1 (ko) |
JP (1) | JP3150933B2 (ko) |
KR (1) | KR100278027B1 (ko) |
CN (1) | CN1123423C (ko) |
DE (2) | DE19651761A1 (ko) |
SG (1) | SG60162A1 (ko) |
TW (1) | TW411525B (ko) |
Cited By (1)
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KR200471472Y1 (ko) * | 2013-09-30 | 2014-03-12 | 전용준 | 상부 공압제어 어셈블리가 상부에 착·탈 가능하게 장착된 씨엠피 |
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-
1996
- 1996-12-12 DE DE19651761A patent/DE19651761A1/de not_active Withdrawn
-
1997
- 1997-09-29 CN CN97118946A patent/CN1123423C/zh not_active Expired - Lifetime
- 1997-12-02 SG SG1997004221A patent/SG60162A1/en unknown
- 1997-12-08 KR KR1019970066694A patent/KR100278027B1/ko active IP Right Grant
- 1997-12-09 TW TW086118563A patent/TW411525B/zh active
- 1997-12-09 JP JP33894397A patent/JP3150933B2/ja not_active Expired - Lifetime
- 1997-12-09 US US08/987,515 patent/US5980361A/en not_active Expired - Lifetime
- 1997-12-11 DE DE59704120T patent/DE59704120D1/de not_active Expired - Lifetime
- 1997-12-11 EP EP97121841A patent/EP0847835B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200471472Y1 (ko) * | 2013-09-30 | 2014-03-12 | 전용준 | 상부 공압제어 어셈블리가 상부에 착·탈 가능하게 장착된 씨엠피 |
Also Published As
Publication number | Publication date |
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DE59704120D1 (de) | 2001-08-30 |
EP0847835A1 (de) | 1998-06-17 |
CN1123423C (zh) | 2003-10-08 |
EP0847835B1 (de) | 2001-07-25 |
KR100278027B1 (ko) | 2001-02-01 |
TW411525B (en) | 2000-11-11 |
SG60162A1 (en) | 1999-02-22 |
CN1185028A (zh) | 1998-06-17 |
JPH10180617A (ja) | 1998-07-07 |
US5980361A (en) | 1999-11-09 |
DE19651761A1 (de) | 1998-06-18 |
JP3150933B2 (ja) | 2001-03-26 |
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