EP0670595A1 - Mit Harz eingekapseltes Halbleiterbauelement - Google Patents

Mit Harz eingekapseltes Halbleiterbauelement Download PDF

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Publication number
EP0670595A1
EP0670595A1 EP95101626A EP95101626A EP0670595A1 EP 0670595 A1 EP0670595 A1 EP 0670595A1 EP 95101626 A EP95101626 A EP 95101626A EP 95101626 A EP95101626 A EP 95101626A EP 0670595 A1 EP0670595 A1 EP 0670595A1
Authority
EP
European Patent Office
Prior art keywords
resin
cured resin
dam
jis
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95101626A
Other languages
English (en)
French (fr)
Other versions
EP0670595B1 (de
Inventor
Akira Dow Corning Toray Silicone Co. Ltd Kasuya
Katsutoshi Dow Corning Toray Silicone Mine
Kimio Dow Corning Toray Silicone Yamakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Silicone Co Ltd
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Filing date
Publication date
Application filed by Dow Corning Toray Silicone Co Ltd filed Critical Dow Corning Toray Silicone Co Ltd
Publication of EP0670595A1 publication Critical patent/EP0670595A1/de
Application granted granted Critical
Publication of EP0670595B1 publication Critical patent/EP0670595B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439Silver (Ag) as principal constituent
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
EP95101626A 1994-02-08 1995-02-07 Mit Harz eingekapseltes Halbleiterbauelement Expired - Lifetime EP0670595B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35426/94 1994-02-08
JP03542694A JP3683597B2 (ja) 1994-02-08 1994-02-08 樹脂封止半導体装置

Publications (2)

Publication Number Publication Date
EP0670595A1 true EP0670595A1 (de) 1995-09-06
EP0670595B1 EP0670595B1 (de) 1998-05-27

Family

ID=12441544

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95101626A Expired - Lifetime EP0670595B1 (de) 1994-02-08 1995-02-07 Mit Harz eingekapseltes Halbleiterbauelement

Country Status (3)

Country Link
EP (1) EP0670595B1 (de)
JP (1) JP3683597B2 (de)
DE (1) DE69502641T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793069A1 (fr) * 1999-04-28 2000-11-03 Gemplus Card Int Procede de fabrication de dispositif electronique portable a circuit integre protege par resine photosensible
FR3014708A1 (fr) * 2013-12-13 2015-06-19 Hispano Suiza Sa Procede de depot de plusieurs polymeres de protection sur un systeme electronique

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288426A (ja) * 1995-04-20 1996-11-01 Nec Corp 半導体装置
JP5388673B2 (ja) * 2008-05-07 2014-01-15 パナソニック株式会社 電子部品

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582455A (en) * 1978-12-18 1980-06-21 Toshiba Corp Resin sealing type semiconductor device
JPS6080258A (ja) * 1983-10-07 1985-05-08 Fuji Xerox Co Ltd 樹脂封止型半導体装置の製造方法
JPS62125653A (ja) * 1985-11-26 1987-06-06 Mitsubishi Electric Corp 半導体装置
JPS62229862A (ja) * 1986-03-28 1987-10-08 Ibiden Co Ltd 封止枠を有する半導体素子搭載用回路基板
EP0470559A1 (de) * 1990-08-07 1992-02-12 Siemens Aktiengesellschaft Verfahren zur Montage von integrierten Halbleiterschaltkreisen
JPH0448758A (ja) * 1990-06-14 1992-02-18 Toray Dow Corning Silicone Co Ltd 樹脂封止半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582455A (en) * 1978-12-18 1980-06-21 Toshiba Corp Resin sealing type semiconductor device
JPS6080258A (ja) * 1983-10-07 1985-05-08 Fuji Xerox Co Ltd 樹脂封止型半導体装置の製造方法
JPS62125653A (ja) * 1985-11-26 1987-06-06 Mitsubishi Electric Corp 半導体装置
JPS62229862A (ja) * 1986-03-28 1987-10-08 Ibiden Co Ltd 封止枠を有する半導体素子搭載用回路基板
JPH0448758A (ja) * 1990-06-14 1992-02-18 Toray Dow Corning Silicone Co Ltd 樹脂封止半導体装置
EP0470559A1 (de) * 1990-08-07 1992-02-12 Siemens Aktiengesellschaft Verfahren zur Montage von integrierten Halbleiterschaltkreisen

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 004, no. 130 (E - 025) 12 September 1980 (1980-09-12) *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 220 (E - 341) 6 September 1985 (1985-09-06) *
PATENT ABSTRACTS OF JAPAN vol. 011, no. 346 (E - 556) 12 November 1987 (1987-11-12) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 099 (E - 594) 31 March 1988 (1988-03-31) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 240 (E - 1211) 3 June 1992 (1992-06-03) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793069A1 (fr) * 1999-04-28 2000-11-03 Gemplus Card Int Procede de fabrication de dispositif electronique portable a circuit integre protege par resine photosensible
WO2000067316A2 (fr) * 1999-04-28 2000-11-09 Gemplus Procede de fabrication de dispositif electronique portable a circuit integre protege par resine photosensible
WO2000067316A3 (fr) * 1999-04-28 2001-03-29 Gemplus Card Int Procede de fabrication de dispositif electronique portable a circuit integre protege par resine photosensible
US6613609B1 (en) 1999-04-28 2003-09-02 Gemplus Method for producing a portable electronic device with an integrated circuit protected by a photosensitive resin
FR3014708A1 (fr) * 2013-12-13 2015-06-19 Hispano Suiza Sa Procede de depot de plusieurs polymeres de protection sur un systeme electronique

Also Published As

Publication number Publication date
DE69502641T2 (de) 1998-11-12
DE69502641D1 (de) 1998-07-02
JP3683597B2 (ja) 2005-08-17
EP0670595B1 (de) 1998-05-27
JPH07221225A (ja) 1995-08-18

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