EP0454054B1 - Appareil de recuit par lampe et méthode - Google Patents

Appareil de recuit par lampe et méthode Download PDF

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Publication number
EP0454054B1
EP0454054B1 EP19910106511 EP91106511A EP0454054B1 EP 0454054 B1 EP0454054 B1 EP 0454054B1 EP 19910106511 EP19910106511 EP 19910106511 EP 91106511 A EP91106511 A EP 91106511A EP 0454054 B1 EP0454054 B1 EP 0454054B1
Authority
EP
European Patent Office
Prior art keywords
semiconductor wafer
cooling gas
blow
cooling
lamp annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP19910106511
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German (de)
English (en)
Other versions
EP0454054A2 (fr
EP0454054A3 (en
Inventor
Nobuo C/O Yokohama Works Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP0454054A2 publication Critical patent/EP0454054A2/fr
Publication of EP0454054A3 publication Critical patent/EP0454054A3/en
Application granted granted Critical
Publication of EP0454054B1 publication Critical patent/EP0454054B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates to lamp annealing apparatus and method, and more particularly to rapid annealing technology which is essential to manufacture a GaAs field effect transistor operating in a microwave range.
  • Fig.1 shows a conventional lamp annealing apparatus.
  • a temperature of a semiconductor wafer 2 is rapidly raised (heating step) by using lamps 1 such as infrared ray lamps as a heat source, maintaining it at the elevated temperature for a certain time period (steady state step), and temperature is rapidly dropped (cooling step).
  • Fig.2 shows this process in which state 1 indicates the heating step, state 2 indicates the steady state step and state 3 indicates the cooling step.
  • the lamp Since the lamp effects annealing in a short time, the diffusion of injected ions and the evaporation of As on the semiconductor wafer can be prevented.
  • US-A-4 649 261 discloses an apparatus for heating semiconductor wafers in order to achieve annealing. It teaches the use of a mount on which is placed a semiconductor wafer that is to be annealed. Above the mount are heating lamps to heat the semiconductor wafer. Cooling gas blow means are arranged above the mount to cool said lamps, there being a sheet of quartz glass separating the semiconductor wafer from said blow means to ensure that the cooling gas cannot act on the semiconductor wafer.
  • the apparatus of the present invention comprises
  • the method of the present invention for lamp annealing a semiconductor wafer comprises a heat step, a steady state step and a cooling step, wherein
  • the periphery of the semiconductor wafer is cooled in the heating step of the annealing process and the center of the semiconductor wafer is cooled in the steady state step and the cooling step so that the center and the periphery of the semiconductor wafer are kept at uniform temperatures throughout the annealing process.
  • a semiconductor wafer 2 to be annealed is mounted on an auxiliary GaAs substrate 5 (which may be a Si substrate) arranged on a quartz suceptor 4 supported by a rotating shaft 3.
  • a group of lamps 1 comprising tubular lamps 1a - 1f arranged in parallel are arranged above the semiconductor wafer 2, and cooling gas flow means 10 is arranged thereabove.
  • Each of the lamps 1a - 1f is an infrared ray lamp having a tungsten filament longitudinally (normal to the plane of the drawing) arranged at the center of the tube.
  • the cooling gas flow means 10 comprises an outer pipe 10a and an inner pipe 10b.
  • the cooling gas flow means 10 is shown by a sectional view in Fig.3, and flows of the cooling gas therethrough are shown by arrows. All of those elements are arranged in a chamber 19 in a normal pressure N2 environment. Cooling gas supply means 21 is provided externally of the chamber 19.
  • the cooling gas supply means 21 comprises a pump 13, a gas cooling device 14, control valves 15 and 16, and a control unit 17.
  • the N2 gas in the chamber 19 is supplied by the pump 13 to the cooling gas flow means 10 as cooling gas though the pipe 18, the gas cooling device 14, the pump 13 and the valve 15 or 16.
  • the pump 13, the gas cooling device 14 and the valves 15 and 16 are controlled by the controller 17.
  • the controller 17 For example, when the valve 15 is opened and the valve 16 is closed, the cooling gas is flown toward the center of the semiconductor wafer 2 through the inner pipe 10b.
  • the valve 16 is opened and the valve 15 is closed, the cooling gas is flown toward the periphery of the semiconductor wafer 2 through the outer pipe 10a.
  • the temperature of the cooling gas is controlled by the gas cooling device 14 in accordance with a command from the controller 17.
  • FIG.4 A construction of the cooling gas flow means 10 is shown in Fig.4. As shown, an outer opening 11 of the outer pipe 10b of the cooling gas flow means 10 spreads outward so that the cooling gas to the semiconductor wafer 2 is flown to a wide area. It is not always necessary to spread the openings but the openings may have the some width as other areas so long as the cooling gas is flown to a sufficiently wide area.
  • the N2 gas which serves as the cooling gas is blown into the outer pipe 10a and it is discharged from the outer opening 11.
  • the heat dissipation effect in the periphery of the semiconductor wafer 2 is enhanced so that the overall temperature distribution is kept uniform.
  • the N2 gas is flown into the inner pipe 10b and it is discharged from the inner opening 12.
  • the heating step, the steady state step and the cooling step take approximately 10 seconds in total. In each step, the overall temperature distribution of the semiconductor wafer is uniform so that the slip line and the warp in the semiconductor wafer are prevented.
  • the heat is applied while the semiconductor wafer 2 is rotated so that the overall temperature distribution of the semiconductor wafer is further uniform.
  • cooling gas blow means 20 shown in Fig. 5 which comprises four outer pipes 20a, 20b, 20c and 20d and an inner pipe 20e may be used in place of the cooling gas flow means 10 to attain the same effect.
  • the tungsten lamps are used as the lamp 1 although other infrared ray lamps may be used.
  • the shape of lamp may be spherical or ring.
  • the cooling gas is selectively blown to the center or the periphery of the semiconductor wafer, although it may be blown to both the center and the periphery of the semiconductor wafer with flow rate control.

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Claims (4)

  1. Dispositif de recuit à la lampe comprenant : un support conçu pour recevoir une tranche de semiconducteur (2) sur celui-ci,
    une lampe de chauffage (1) disposée à proximité dudit support afin de chauffer la tranche de semiconducteur (2) devant être montée sur ledit support,
    ledit dispositif étant caractérisé par
    des moyens de soufflage (10) de gaz de refroidissement disposés au-dessus dudit support afin de souffler du gaz de refroidissement vers ladite tranche de semiconducteur,
    lesdits moyens de soufflage (10) de gaz de refroidissement comprenant un premier trajet de soufflage (10a) destiné à souffler le gaz de refroidissement vers la périphérie de ladite tranche de semiconducteur et un second trajet de soufflage (10b) destiné à souffler le gaz de refroidissement vers le centre de ladite tranche de semiconducteur, lesdits premier et second trajets de soufflage étant mécaniquement distincts l'un de l'autre.
  2. Dispositif de recuit à la lampe selon la revendication 1, comprenant en outre des moyens (17) pour commander le débit du gaz de refroidissement soufflé par l'intermédiaire dudit premier trajet de soufflage (10b) et dudit second trajet de soufflage (10a) desdits moyens de soufflage (10) de gaz de refroidissement.
  3. Dispositif de recuit à la lampe selon la revendication 2, dans lequel lesdits moyens de commande du débit de gaz de refroidissement (17) agissent pour commander de façon sélective l'écoulement du gaz de refroidissement par l'intermédiaire dudit premier trajet de soufflage (10b) ou par l'intermédiaire dudit second trajet de soufflage (10a).
  4. Procédé de recuit à la lampe d'une tranche de semiconducteur, comprenant une étape de chauffage, une étape d'état stable et une étape de refroidissement, caractérisé en ce que :
    du gaz de refroidissement est soufflé à la périphérie de la tranche de semiconducteur au cours de ladite étape de chauffage en empruntant un premier trajet de soufflage (10a), et
    du gaz de refroidissement est soufflé vers le centre de la tranche de semiconducteur au cours de ladite étape stable et de ladite étape de refroidissement en empruntant un second trajet de soufflage (10b) mécaniquement distinct dudit premier trajet de soufflage (10a).
EP19910106511 1990-04-23 1991-04-23 Appareil de recuit par lampe et méthode Expired - Lifetime EP0454054B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10691690A JPH045822A (ja) 1990-04-23 1990-04-23 ランプアニール装置および方法
JP106916/90 1990-04-23

Publications (3)

Publication Number Publication Date
EP0454054A2 EP0454054A2 (fr) 1991-10-30
EP0454054A3 EP0454054A3 (en) 1992-03-18
EP0454054B1 true EP0454054B1 (fr) 1996-01-10

Family

ID=14445754

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19910106511 Expired - Lifetime EP0454054B1 (fr) 1990-04-23 1991-04-23 Appareil de recuit par lampe et méthode

Country Status (4)

Country Link
EP (1) EP0454054B1 (fr)
JP (1) JPH045822A (fr)
CA (1) CA2040946A1 (fr)
DE (1) DE69116205T2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
JP3917237B2 (ja) * 1997-05-20 2007-05-23 東京エレクトロン株式会社 レジスト膜形成方法
JPH11288893A (ja) 1998-04-03 1999-10-19 Nec Corp 半導体製造装置及び半導体装置の製造方法
KR100634642B1 (ko) * 1998-11-20 2006-10-16 스티그 알티피 시스템즈, 인코포레이티드 반도체 웨이퍼의 급속 가열 및 냉각 장치
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
JP4870604B2 (ja) * 2007-03-29 2012-02-08 株式会社ニューフレアテクノロジー 気相成長装置
JP5456257B2 (ja) * 2008-01-08 2014-03-26 大日本スクリーン製造株式会社 熱処理装置
DE102008012931B4 (de) * 2008-03-06 2011-07-21 VTD Vakuumtechnik Dresden GmbH, 01257 Verfahren und Vorrichtung zum Kühlen von Substraten
JP2014204017A (ja) * 2013-04-08 2014-10-27 シンフォニアテクノロジー株式会社 被処理体の受容装置
JP2014204018A (ja) * 2013-04-08 2014-10-27 シンフォニアテクノロジー株式会社 被処理体の冷却ユニット
TWI569349B (zh) * 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
JP2015103726A (ja) 2013-11-27 2015-06-04 東京エレクトロン株式会社 マイクロ波加熱処理装置及びマイクロ波加熱処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4221956A (en) * 1978-06-21 1980-09-09 General Electric Company Apparatus for practising temperature gradient zone melting
US4830700A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Processing apparatus and method

Also Published As

Publication number Publication date
JPH045822A (ja) 1992-01-09
DE69116205T2 (de) 1996-06-27
EP0454054A2 (fr) 1991-10-30
EP0454054A3 (en) 1992-03-18
CA2040946A1 (fr) 1991-10-24
DE69116205D1 (de) 1996-02-22

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