GB2317497A - Semiconductor wafer thermal processing apparatus - Google Patents

Semiconductor wafer thermal processing apparatus Download PDF

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Publication number
GB2317497A
GB2317497A GB9710204A GB9710204A GB2317497A GB 2317497 A GB2317497 A GB 2317497A GB 9710204 A GB9710204 A GB 9710204A GB 9710204 A GB9710204 A GB 9710204A GB 2317497 A GB2317497 A GB 2317497A
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GB
United Kingdom
Prior art keywords
gas
susceptor
processing apparatus
thermal processing
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9710204A
Other versions
GB9710204D0 (en
Inventor
Seong-Hun Kang
Young-Lark Koh
Jung-Kyu Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9710204D0 publication Critical patent/GB9710204D0/en
Publication of GB2317497A publication Critical patent/GB2317497A/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

The apparatus comprises: a process chamber 21, a susceptor 22 on which a wafer is mounted inside the process chamber, a resistance heater 29 for heating the susceptor, a lamp 28 installed at the top of the process chamber for raising the temperature of the process chamber up to a temperature required in the process, a gas injector 33 installed on one side of the process chamber for supplying gas to the process chamber, and a gas heater 34 mounted on the gas injector for preheating gas supplied to the process chamber. The wafer is held on the susceptor by vacuum supplied to a groove 24 and is lifted off the susceptor by pins 35. The lamp is used for temperatures up to 1200‹C whilst the heater 29 is used for temperatures up to 500‹C. The heater 34 preheats the gas to between 50 and 800‹C.

Description

2317497 SEMICONDUCTOR WAFER THERMAL PROCESSING APPARATUS
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention generally relates to a thermal processing apparatus for semiconductor wafer, and more particularly, to a semiconductor wafer thermal processing apparatus for improving a quality and an uniformity of thermal processing according to enlarging a wafer diameter.
Discussion of Related Art Generally, there are used various thermal processing arts in fabricating an integrated circuit using a silicon. For, example, it is used to structure an insulating layer by oxidizing a silicon substrate into SiO2, and to make a gate oxide film for a transistor and etching mask.
is Additionally, the thermal processing art is often used as means to generate extra hole or electron which can give to a conductivity according as 3-valence or S-valence ion is injected into a silicon substrate and rearranged from inter stitial to substitutional inside a silicon crystal.
Further, the thermal processing art is used to the reflow of BPSG film and the thermal processing of a thin-film formed by various methods, and to a fabricating process of 1 semiconductor devices for many objects. There is a furnace which is an apparatus generally used in the thermal processing.
However, in recent, it is inclined to perform the heat treatment by using RTP(Rapid Thermal Processor) to reduce the thermal budget of the fabricating process due to reducing the size of an element according as the semiconductor device gradually is high-integrated.
The RTP apparatus is divided into two methods according to the heating method, that is, a thermal processing apparatus of a lamp heating type using a resistance heater.
Fig. 1 is a schematically sectional view showing a commercial thermal processing apparatus of a lamp heating type of AMAT CO., which is composed of a plurality of lamps 4 equally arranged above a wafer 3 on the top of a susceptor 2 in a processing chamber 1, a support ring 5 mounted on the susceptor 2 for supporting the wafer 3, wherein gas is injected from one side of the processing chamber 1 in a horizontal direction and exhausted to the other side.
Fig. 2 shows a commercial lamp heating type of AST CO.
more improved than an above described AMAT CO. lamp heating type, which has the structure of installing a plurality of lamps 4 above and below a wafer to increase the thermal efficiency.
2 The thermal processing apparatus of the above lamp heating type has an advantage capable of maintaining an uniform temperature by setting the range of temperature and applying the different power to each lamp 4.
However, since the thermal processing apparatus of the lamp heating type used a support ring 5 or a finger as the support of the wafer 3, according as the wafer diameter is enlarged in recent, in case that the support ring or finger is used as the support of the wafer, it is disadvantage that the deflection deformation or stress change due to the high temperature of thermal processing are high.
Fig. 3 shows a thermal processing apparatus of a commercial resistance heating type of MATTONS CO., which is composed of a wafer 13 on a susceptor 12 in a processing is chamber 11, and a heat resistance type's heater 14 underlying the susceptor 12 for heating the susceptor 12 in a constant temperature, wherein gas is supplied through the upper side of the wafer 13.
The above heat treatment apparatus of a resistor heating type has advantages that since the size of the processing chamber 11 is large and a wafer mounting groove 12a is formed on the susceptor 12 and thereby the wafer 13 is supported, the thermal deformation due to the high temperature is not generated when performing the heat treatment of a large 3 diameter wafer, and an uniform processing is possible due to a gas flows from the upper of the wafer 13.
However, the heat treatment apparatus of the resistor heating type also has shortcomings that since the processing temperature is limited in less than 9000C and then the range of the process temperature is very small, various processes aren't performed, it takes long time to increase and maintain the inner temperature of the processing chamber up to the processing temperature.
Furthermore, since the heat treatment apparatus of a conventional lamp heating type and a resistor heating type has a problem that the stress is happened due to a abrupt temperature change since a gas is supplied in the processing chamber in the state of low temperature or normal temperature.
is SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to a semiconductor wafer thermal processing apparatus capable of performing an uniform process, and being suitable for enlarging a wafer diameter that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide a semiconductor wafer thermal processing apparatus capable of 4 performing various process by varying the process temperature range in a chamber.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a semiconductor wafer thermal processing apparatus comprises: a process chamber forming a closed space; a susceptor installed in the process chamber for mounting a is wafer on itself; a heat resistance heater mounted on the susceptor for heating the susceptor; a lamp installed in the upper of the process chamber for raising an inner temperature of the process chamber up to a temperature required in the process; a gas injector installed on one side of the process chamber for supplying a gas to the inner of the process chamber; and a gas heater mounted on the gas injector for preheating a gas supplied to the inner of the process chamber.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory And are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE ATTACHED DRAWINGS
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
In the drawings:
Fig. 1 is a sectional structure view schematically showing a conventional thermal processing apparatus of a lamp heating type.
Fig. 2 is a sectional structure view schematically is showing another type's conventional thermal processing apparatus of a lamp heating type.
Fig. 3 is a sectional structure view schematically showing a conventional thermal processing apparatus of a thermal resistance heating type.
Fig. 4 is a sectional structure view showing a thermal processing apparatus of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENT
6 Reference will now be made in detail to the preferred embodiments'of the present invention, examples of which are illustrated in the accompanying drawings.
Fig. 4 is a sectional structure view showing a semiconductor wafer thermal processing apparatus of the present invention, a susceptor 22 is fixed in the inner of a processing chamber 21 having a closed space, a wafer 23 is placed on the susceptor 22.
The fixture of a wafer 23 is executed by a circular vacuum absorption groove 24 formed on the top of the susceptor 22, the vacuum absorption groove 24 is connected to a vacuum path 25 passing through the lower of the susceptor 22 and is vacuum-absorbed through the vacuum path 25.
Further, the wafer 23 is to be loaded or unloaded over is the susceptor 22 by means of a pin-typed lifter 35 installed to pass through the susceptor 22 in a vertical direction.
The cooling of the susceptor 22 and wafer 23 is performed by supplying a cooling gas of N2, He or Ar etc. to a cooling hole 27 and a cooling groove 26 formed in the inner of the suseeptor 22 and the upper thereof, the cooling groove 26 is connected with a cooling gas path 36 passing through the 'Lower of the susceptor 22 and therethrough the cooling gas is supplied.
The maintenance of the processing temperature in the 7 processing chamber 21 is attained by a halogen lamp 28 mounted on over the wafer 23, a heat resistance heater 29 installed in the susceptor 22, a temperature sensor 30 installed through on the susceptor 22, which is to variously control the processing temperature range according as the heating temperature range of a halogen lamp 28 and the heat resistance heater 29 is set according to the characteristics.
For example, the halogen lamp 28 is set to maintain a high temperature of 500-12000C by its quick heating and cooling, the heat resistance heater 29 whose increasing rate of temperature is relatively low is set to maintain a temperature ranging from normal to less than 5000C.
Accordingly, wide-ranged processing temperature's selection is acquired by using two halogen lamps 28 and the heat resistance is heater 29, or either of them.
Preferably, the halogen lamp 28 set up by Circle Lamp type. Linear Lamp type or Light Pipes is also possible.
Therefore, the process chamber 21 is to be set up in accordance with the set-up type of the halogen lamp 28.
The gas supply required in the process is executed through a gas inlet 31 and gas outlet 32 equipped on both ends of the bottom of the process chamber 21. Gas supply is also possible through a gas injector 33 on one side wall of the processing chamber 21, wherein the gas is preheated in the 8 range of 508000C according to the processing temperature by setting a gas heater 34 on the gas supply line of the gas injector 33 prior to supplying the gas into the process chamber 21.
At this time, it is desirable that the gas injector 33 is made of stainless still or quartz to largely activate a nitrogen-group gas, oxygen-group gas and an inert gas.
In the semiconductor wafer thermal processing apparatus structured as above, the width of the process temperature range is enlarged according as the process temperature of the inner of the process chamber is maintained by controlling the heat resistive heater 29 mounted on the susceptor 22 and the halogen lamp 28 mounted on the upper of the wafer 23, therefore, it is possible to perform the thermal processing in is the range of various process temperature.
That is, since the halogen lamp 28 is suitable for maintaining the high temperature less than 12000C and the heat resistance heater 29 is suitable for maintaining the low temperature less than 5000C, it is good to use the halogen lamp 28 when processing in the high temperature, the heat resistance heater 29 when processing in the low temperature.
In case of performing the high temperature process by using simultaneously the halogen lamp 28 and heat resistance heater 29, it is possible to maintain more uniform processing 9 temperature since the temperature change is not large and the temperature is quickly increased to the high temperature of the process temperature when the inner temperature of the processing chamber 21 is maintained in a high temperature by using the halogen lamp 28 in the state that the temperature of the processing chamber 21 is increasing to the constant level by maintaining the heat resistance heater 29 in less than 5000C.
Further, since the wafer 23 is loaded to the process chamber 21 preheated by the heat resistance heater 29, thereafter, the halogen lamp 28 is used for the high temperature inside the process chamber 21, the stress of the wafer 23 due to the quick change of temperature is reduced.
Additionally, the present invention is that the wafer 23 is is loaded and unloaded on the susceptor 22 by a lifter 35 mounted on the susceptor 22 and is vacuum-absorbed by a vacuum absorption groove 24 through a vacuum path 25 and simultaneously is cooled by a cooling gas supplied into a cooling groove 26 through a cooling gas path 36.
Accordingly, the thermal deformation of the wafer 23 due to a high temperature is reduced, and is minimized by dealing with enlarging the wafer diameter, the wafer is cooled by supplying the cooling gas into a cooling hole 27 formed on the inner of the susceptor 22 in processing, and then after that the susceptor 22 is cooled.
Furthermore, the thermal processing apparatus of the present invention performs an uniform process by means of stabilizing the gas reaction since the gas heater 34 mounted on the gas injector 33 preheats a gas before injecting the gas and the first activated gas is injected. Therefore, the temperature change in the process chamber is reduced and the stress according to the temperature change is relieved.
As the above described, the semiconductor wafer thermal processing apparatus according to the present invention is suitable for improving a quality and an uniformity of process when performing a thermal processing of a large diameter wafer, and is capable of performing various process because the process temperature range in the process chamber is is widened, and performs the stabled process according as the stress due to the quick change of temperature and the thermal deformation due to a high temperature are reduced.
Tt will be apparent to those skilled in the art that various modifications and variations can be made in a semiconductor wafer heat treatment apparatus of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and 11 their equivalents.
12

Claims (11)

CLAIMS:
1. A semiconductor wafer thermal process apparatus, comprising:
a process chamber forming a closed space; a susceptor installed in said process chamber for mounting a wafer on itself.
a heat resistance heater mounted on said susceptor for heating said susceptor; a lamp installed in the upper of said process chamber for raising an inner temperature of said process chamber up to a temperature required in the process; a gas injector installed on one side of said process chamber for supplying a gas to the inner of said process chamber; and is a gas heater mounted on said gas injector for preheating a gas supplied to the inner of said process chamber.
2. The semiconductor wafer thermal processing apparatus according to claim 1, wherein the temperature of said lamp is controlled ranging from 50012000C, and the temperature of said heat resistance heater is controlled below 5000C.
13
3. The semiconductor wafer thermal processing apparatus according to claim 1, wherein a vacuum absorption groove for holding said wafer is formed on the top of said susceptor.
4. The semiconductor wafer thermal processing apparatus according to claim 1, wherein a cooling groove for supplying a cooling gas in order to cool said wafer is formed on the top of said susceptor.
5. The semiconductor wafer thermal processing apparatus according to claim 1, wherein a cooling hole for supplying a cooling gas in order to cool said susceptor is formed on the inner of said susceptor.
6. The semiconductor wafer thermal processing apparatus according to claims 4 and 5, wherein said cooling gas is selected by any of N, He, Ar.
is
7. The semiconductor wafer thermal processing apparatus according to claim 1, wherein a lifter is installed on said susceptor for loading and unloading said wafer.
8. The semiconductor wafer thermal processing apparatus according to claim 1, wherein said gas injector is made of 14 stainless still.
9. The semiconductor wafer thermal processing apparatus according to claim 1, wherein said injector is made of quartz.
10. The semiconductor wafer thermal processing apparatus according to claim 1, wherein the temperature of said gas heater is controlled ranging 508000C.
11. The semiconductor wafer thermal processing apparatus, substantially as described herein with reference to and as illustrated in Figure 4 of the accompanying drawings.
is
GB9710204A 1996-09-23 1997-05-19 Semiconductor wafer thermal processing apparatus Withdrawn GB2317497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960041741A KR100203780B1 (en) 1996-09-23 1996-09-23 Heat treating apparatus for semiconductor wafer

Publications (2)

Publication Number Publication Date
GB9710204D0 GB9710204D0 (en) 1997-07-09
GB2317497A true GB2317497A (en) 1998-03-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB9710204A Withdrawn GB2317497A (en) 1996-09-23 1997-05-19 Semiconductor wafer thermal processing apparatus

Country Status (4)

Country Link
JP (1) JPH10107018A (en)
KR (1) KR100203780B1 (en)
DE (1) DE19716707A1 (en)
GB (1) GB2317497A (en)

Cited By (4)

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US7402778B2 (en) * 2005-04-29 2008-07-22 Asm Assembly Automation Ltd. Oven for controlled heating of compounds at varying temperatures
FR2959756A1 (en) * 2010-05-04 2011-11-11 Global Technologies Pyrolytic reactor for synthesis of carbon fibers for producing nanotubes, comprises internal chamber, containment gas inlet system, precursor injection system of which diffuser opens in chamber, base plate, and substrate holder
FR2959757A1 (en) * 2010-05-04 2011-11-11 Global Technologies Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber
US11251057B2 (en) 2018-01-26 2022-02-15 SCREEN Holdings Co., Ltd. Thermal processing method and thermal processing device

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JP3882141B2 (en) * 2002-06-13 2007-02-14 日鉱金属株式会社 Vapor growth apparatus and vapor growth method
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WO2009117514A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20110024049A1 (en) * 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
KR101031226B1 (en) * 2009-08-21 2011-04-29 에이피시스템 주식회사 Heater block of rapid thermal processing apparatus
KR101128267B1 (en) * 2009-11-26 2012-03-26 주식회사 테스 Gas distribution apparatus and process chamber having the same
JP5892733B2 (en) * 2011-03-25 2016-03-23 コアテクノロジー株式会社 Multistage heating device
US11107708B2 (en) * 2017-11-14 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Heating platform, thermal treatment and manufacturing method
DE102018125150A1 (en) * 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. HEATING PLATFORM, HEAT RECORDING AND MANUFACTURING METHOD
JP2019216287A (en) * 2019-10-01 2019-12-19 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment device and heat treatment method

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US5478401A (en) * 1994-03-10 1995-12-26 Hitachi, Ltd. Apparatus and method for surface treatment

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Publication number Priority date Publication date Assignee Title
EP0614216A1 (en) * 1991-11-22 1994-09-07 OHMI, Tadahiro Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor
US5478401A (en) * 1994-03-10 1995-12-26 Hitachi, Ltd. Apparatus and method for surface treatment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402778B2 (en) * 2005-04-29 2008-07-22 Asm Assembly Automation Ltd. Oven for controlled heating of compounds at varying temperatures
FR2959756A1 (en) * 2010-05-04 2011-11-11 Global Technologies Pyrolytic reactor for synthesis of carbon fibers for producing nanotubes, comprises internal chamber, containment gas inlet system, precursor injection system of which diffuser opens in chamber, base plate, and substrate holder
FR2959757A1 (en) * 2010-05-04 2011-11-11 Global Technologies Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber
US11251057B2 (en) 2018-01-26 2022-02-15 SCREEN Holdings Co., Ltd. Thermal processing method and thermal processing device

Also Published As

Publication number Publication date
KR100203780B1 (en) 1999-06-15
KR19980022560A (en) 1998-07-06
JPH10107018A (en) 1998-04-24
GB9710204D0 (en) 1997-07-09
DE19716707A1 (en) 1998-04-02

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