GB9710204D0 - Semiconductor wafer thermal processing apparatus - Google Patents

Semiconductor wafer thermal processing apparatus

Info

Publication number
GB9710204D0
GB9710204D0 GBGB9710204.0A GB9710204A GB9710204D0 GB 9710204 D0 GB9710204 D0 GB 9710204D0 GB 9710204 A GB9710204 A GB 9710204A GB 9710204 D0 GB9710204 D0 GB 9710204D0
Authority
GB
United Kingdom
Prior art keywords
processing apparatus
semiconductor wafer
thermal processing
wafer thermal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9710204.0A
Other versions
GB2317497A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9710204D0 publication Critical patent/GB9710204D0/en
Publication of GB2317497A publication Critical patent/GB2317497A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
GB9710204A 1996-09-23 1997-05-19 Semiconductor wafer thermal processing apparatus Withdrawn GB2317497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960041741A KR100203780B1 (en) 1996-09-23 1996-09-23 Heat treating apparatus for semiconductor wafer

Publications (2)

Publication Number Publication Date
GB9710204D0 true GB9710204D0 (en) 1997-07-09
GB2317497A GB2317497A (en) 1998-03-25

Family

ID=19474925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9710204A Withdrawn GB2317497A (en) 1996-09-23 1997-05-19 Semiconductor wafer thermal processing apparatus

Country Status (4)

Country Link
JP (1) JPH10107018A (en)
KR (1) KR100203780B1 (en)
DE (1) DE19716707A1 (en)
GB (1) GB2317497A (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277237A (en) * 1999-03-24 2000-10-06 Komatsu Ltd Base board temperature control plate and controlling device fitted with the same
JP2002289546A (en) * 2001-03-27 2002-10-04 Denso Corp Device and method for producing silicon carbide semiconductor
KR100426274B1 (en) * 2001-08-02 2004-04-08 피에스케이 주식회사 Wafer Ashing Apparatus and Method using Lamp Heating
JP3882141B2 (en) * 2002-06-13 2007-02-14 日鉱金属株式会社 Vapor growth apparatus and vapor growth method
JP4216541B2 (en) * 2002-06-13 2009-01-28 日鉱金属株式会社 Vapor growth equipment
CN1308193C (en) * 2004-12-17 2007-04-04 上海圣亚照明有限公司第一分公司 Disposable oxygenating drinking water bottle
JP4535499B2 (en) * 2005-04-19 2010-09-01 東京エレクトロン株式会社 Heating device, coating, developing device and heating method
US7402778B2 (en) * 2005-04-29 2008-07-22 Asm Assembly Automation Ltd. Oven for controlled heating of compounds at varying temperatures
KR100738873B1 (en) 2006-02-07 2007-07-12 주식회사 에스에프에이 Chemical vapor deposition apparatus for flat display
KR101289344B1 (en) * 2006-05-15 2013-07-29 주성엔지니어링(주) Substrate processing apparatus
KR101289346B1 (en) * 2006-05-15 2013-07-29 주성엔지니어링(주) Substrate processing apparatus
KR101289343B1 (en) * 2006-05-15 2013-07-29 주성엔지니어링(주) Substrate processing apparatus
KR101588566B1 (en) * 2008-03-20 2016-01-26 어플라이드 머티어리얼스, 인코포레이티드 Susceptor with roll-formed surface and method for making same
US20110024049A1 (en) * 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
KR101031226B1 (en) * 2009-08-21 2011-04-29 에이피시스템 주식회사 Heater block of rapid thermal processing apparatus
KR101128267B1 (en) * 2009-11-26 2012-03-26 주식회사 테스 Gas distribution apparatus and process chamber having the same
FR2959757B1 (en) * 2010-05-04 2012-08-03 Global Technologies PYROLYTIC REACTOR WITH BILATERAL HEATING
FR2959756B1 (en) * 2010-05-04 2012-08-03 Global Technologies PYROLYTIC REACTOR WITH AXIAL PUMPING
JP5892733B2 (en) * 2011-03-25 2016-03-23 コアテクノロジー株式会社 Multistage heating device
DE102018125150A1 (en) * 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. HEATING PLATFORM, HEAT RECORDING AND MANUFACTURING METHOD
US11107708B2 (en) * 2017-11-14 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Heating platform, thermal treatment and manufacturing method
JP6960344B2 (en) 2018-01-26 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment method and heat treatment equipment
JP2019216287A (en) * 2019-10-01 2019-12-19 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment device and heat treatment method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614216A4 (en) * 1991-11-22 1994-11-30 Tadahiro Ohmi Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor.
JP3234091B2 (en) * 1994-03-10 2001-12-04 株式会社日立製作所 Surface treatment equipment

Also Published As

Publication number Publication date
GB2317497A (en) 1998-03-25
JPH10107018A (en) 1998-04-24
KR19980022560A (en) 1998-07-06
KR100203780B1 (en) 1999-06-15
DE19716707A1 (en) 1998-04-02

Similar Documents

Publication Publication Date Title
GB9710204D0 (en) Semiconductor wafer thermal processing apparatus
TW504041U (en) Wafer processing apparatus
IL123235A0 (en) Semiconductor wafer polishing apparatus
AU5682898A (en) Device for processing semiconductor wafers
SG60162A1 (en) Method and device for polishing semiconductor wafers
IL137996A0 (en) Apparatus and method for cleaning semiconductor wafers
GB2292254B (en) Method for polishing semiconductor substrate and apparatus for the same
EP1174912A4 (en) Semiconductor wafer processing apparatus and processing method
AU5813998A (en) Semiconductor processing apparatus having wafer re-orientation mechanism
TW474456U (en) Semiconductor apparatus
EP0616360A3 (en) Method and apparatus for cooling semiconductor wafers.
AU7358994A (en) Semiconductor wafer processing system
EP0758941A4 (en) Semiconductor wafer polishing apparatus and method
SG75876A1 (en) Process and device for polishing semiconductor wafers
TW475491U (en) Apparatus of cleaning semiconductor wafer
SG63637A1 (en) Apparatus and method for cleaning semiconductor wafers
EP0704895A3 (en) Process for manufacturing semiconductor device and semiconductor wafer
SG55398A1 (en) Thermal processor for semiconductor wafers
EP0649170A3 (en) Semiconductor wafer inspection apparatus.
SG74007A1 (en) Apparatus and method for dicing semiconductor wafers
EP1129362A4 (en) Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing
GB9914083D0 (en) Method and apparatus for improved semiconductor wafer polishing
GB2317052B (en) Thermal processing apparatus for semiconductor wafers
IL122937A0 (en) Semiconductor etching process and apparatus
EP1052688A4 (en) Method and apparatus for processing wafer

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)