KR100203780B1 - Heat treating apparatus for semiconductor wafer - Google Patents
Heat treating apparatus for semiconductor wafer Download PDFInfo
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- KR100203780B1 KR100203780B1 KR1019960041741A KR19960041741A KR100203780B1 KR 100203780 B1 KR100203780 B1 KR 100203780B1 KR 1019960041741 A KR1019960041741 A KR 1019960041741A KR 19960041741 A KR19960041741 A KR 19960041741A KR 100203780 B1 KR100203780 B1 KR 100203780B1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
웨이퍼의 대구경화에 따른 공정의 균일성 및 품질을 개선시키도록 한 반도체 웨이퍼 열처리 장치에 관한 것이다.It relates to a semiconductor wafer heat treatment apparatus for improving the uniformity and quality of the process according to the large diameter of the wafer.
본 발명은 반도체 웨이퍼 열처리장치에 있어서, 밀폐된 공간을 형성하는 공정챔버(21)와, 상기 공정챔버내에 고정설치되어 공정을 위한 웨이퍼(23)가 놓여지는 서셉터(22)와, 상기 서셉터에 설치되어 서셉터를 가열하는 열저항히터(29)와, 상기 웨이퍼의 상부에 설치되어 공정챔버 내부의 온도를 공정에 필요한 온도로 상승시키는 램프(28)와, 상기 공정챔버의 일측에 구비되어 가스를 내부로 공급하는 가스인젝터(33)와, 상기 가스인젝터에 설치되어 공정챔버의 내부로 공급되는 가스를 예열하는 가스히터(34)로 구성된다.The present invention provides a semiconductor wafer heat treatment apparatus comprising: a process chamber 21 for forming a closed space, a susceptor 22 fixedly installed in the process chamber, and having a wafer 23 for processing; A heat resistance heater 29 mounted on the wafer to heat the susceptor, a lamp 28 mounted on the wafer to raise the temperature inside the process chamber to a temperature required for the process, and one side of the process chamber. And a gas injector 33 for supplying gas into the inside and a gas heater 34 for preheating the gas supplied to the inside of the process chamber.
따라서 공정챔버내의 공정온도범위가 넓어져 다양한 공정수행이 가능하고, 고온에 의한 열변형 및 온도의 급변화에 의한 스트레스가 감소되어 안정된 공정이 이루어지며, 특히 대구경의 웨이퍼 열처리시 공정의 균일성 및 품질을 개선시킬 수 있다.Therefore, the process temperature range in the process chamber is widened, and various processes can be performed, and stable processes are achieved by reducing stress due to thermal deformation and rapid change of temperature due to high temperature, and in particular, uniformity and Can improve the quality.
Description
본 발명은 반도체장치 제조를 위한 웨이퍼의 열처리 장치에 관한 것으로서, 더욱 상세하게는 웨이퍼의 대구경화에 따른 공정의 균일성 및 품질을 개선시키도록 한 반도체 웨이퍼 열처리 장치에 관한 것이다.The present invention relates to a wafer heat treatment apparatus for manufacturing a semiconductor device, and more particularly to a semiconductor wafer heat treatment apparatus to improve the uniformity and quality of the process according to the large diameter of the wafer.
일반적으로, 실리콘을 이용하여 집적회로를 만드는 공정에서는 여러 가지 열처리 기술이 쓰이고 있다. 예를 들면 실리콘 기판을 산화시켜 SiO2로 만들어 절연층을 구성하는 데 쓰이기도 하고, 에칭 마스크(Etching Mask) 및 트랜지스터용 게이트 옥사이드막을 만드는 데 쓰이기도 한다.In general, a variety of heat treatment techniques are used in the process of making integrated circuits using silicon. For example, the silicon substrate is oxidized to SiO 2 to form an insulating layer, or to form an etching mask and a gate oxide film for a transistor.
또한 열처리 기술은 실리콘 기판에 3가 또는 5가의 이온을 주입후 주입된 이온이 실리콘 결정속으로 침입형에서 치환형으로 재배열되어 전기의 전도에 기여할 수 있는 여분의 홀 또는 전자를 생기게 하기 위한 수단으로써 사용되어지기도 한다.In addition, heat treatment technology is a means for injecting the trivalent or pentavalent ions into the silicon substrate and the implanted ions into the silicon crystal rearranged from invasive to substitutional form to generate extra holes or electrons that can contribute to the conduction of electricity. It can also be used.
또한 이외에도 열처리 기술은 여러 가지 방법으로 형성된 박막의 열처리 및 BPSG막의 리플로우(Reflow)에 사용되며, 기타 여러 가지 목적으로 열처리 공정이 반도체 장치의 제조공정에 사용되고 있다. 이러한 열처리 공정에 통상적으로 쓰이고 있는 장치는 전기로(Furnace)이다.In addition, the heat treatment technique is used for heat treatment of a thin film formed by various methods and reflow of a BPSG film, and a heat treatment process is used in a manufacturing process of a semiconductor device for various other purposes. An apparatus commonly used in this heat treatment process is an electric furnace.
그러나 최근에는 반도체 장치가 점점 고집적화됨에 따라 소자크기의 감소로 제조공정의 전체 열이력(Thermal Budget)을 줄이기 위하여 RTP(Rapid Thermal Processor)장치를 이용하여 열처리를 하려는 경향이 두드러지고 있다.However, in recent years, as semiconductor devices have been increasingly integrated, there has been a tendency to heat-treat using a rapid thermal processor (RTP) device in order to reduce the overall thermal budget of the manufacturing process due to a decrease in device size.
상기 RTP장치는 가열방식에 따라 두가지로 나뉘어 지는데 할로겐 램프 또는 아아크 램프를 열원으로 이용하는 램프 가열식 열처리 장치와, 저항 가열식 히터를 이용하는 핫 웰(Hot Wall)형 열처리 장치이다.The RTP apparatus is divided into two types according to a heating method, a lamp heating heat treatment apparatus using a halogen lamp or an arc lamp as a heat source, and a hot wall heat treatment apparatus using a resistance heating heater.
도1은 상용화된 AMAT사의 램프 가열식 열처리 장치를 개략적으로 나타낸 단면구조도로서, 공정챔버(1)내의 서셉터(Susceptor)(2)상에 놓여진 웨이퍼(3)의 상부에 다수개의 램프(4)가 균일하게 배열되어 있고, 서셉터(2)에 설치된 서포트링(5)이 웨이퍼(3)를 지지하도록 되어 있으며, 공정챔버(1)내에 주입되는 가스는 공정챔버(1)의 측방에서 수평방향으로 주입되어 반대쪽으로 배출되도록 구성되어 있다.1 is a schematic cross-sectional view showing a commercially available lamp heating heat treatment apparatus of AMAT, in which a plurality of lamps 4 are placed on top of a wafer 3 placed on a susceptor 2 in a process chamber 1; The support ring 5 which is arranged uniformly and provided in the susceptor 2 supports the wafer 3, and the gas injected into the process chamber 1 is horizontal in the horizontal direction from the side of the process chamber 1. It is configured to be injected and discharged to the opposite side.
또한, 도2는 전술한 AMAT사의 램프 가열식 타입을 보다 개량한 상용화된 AST사의 램프 가열식 타입을 나타낸 것으로, 열효율을 높이기 위해 웨이퍼의 상,하부에 다수개의 램프(4)를 각각 설치한 구성이다.2 shows a commercially available lamp heating type of AST, which is a further improvement of the above-described lamp heating type of AMAT, in which a plurality of lamps 4 are respectively provided on the upper and lower portions of the wafer to increase thermal efficiency.
이러한 램프 가열식 열처리장치는 온도영역을 설정하여 각각의 램프(4)마다 파워를 달리하여 인가함으로써 균일한 온도유지가 가능한 장점이 있다.The lamp heating type heat treatment apparatus has a merit that it is possible to maintain a uniform temperature by setting a temperature range and applying different power to each lamp 4.
그러나 램프 가열식 열처리장치는 웨이퍼(3)의 지지를 서포트링(5)이나 핑거를 이용하였던 것으로, 현재 웨이퍼가 대구경화 됨에 따라 웨이퍼의 지지를 서포트링 또는 핑거를 사용하는 경우, 고온의 열처리에 의한 휨변형등 스트레스 변화가 높아지는 단점이 있다.However, the lamp heating type heat treatment apparatus uses the support ring 5 or the finger to support the wafer 3, and in the case of using the support ring or the finger to support the wafer as the wafer is largely enlarged, There is a disadvantage that the stress change such as bending deformation increases.
도3은 상용화된 MATTSON사의 저항 가열식 열처리장치를 나타낸 것으로, 공정챔버(11)내의 서셉터(12)상에 웨이퍼(13)가 놓여지도록 되어 있고, 서셉터(12)에는 열저항식 히터(14)가 설치되어 서셉터(12)를 일정온도로 가열하게 되며, 가스는 웨이퍼(13)의 상부에서 공급되는 구성이다.3 shows a commercially available resistance-heating heat treatment apparatus of MATTSON Corporation, in which the wafer 13 is placed on the susceptor 12 in the process chamber 11, and the heat-resisting heater 14 is placed on the susceptor 12. FIG. ) Is installed to heat the susceptor 12 to a predetermined temperature, the gas is configured to be supplied from the top of the wafer (13).
이러한 저항 가열식 열처리장치는 공정챔버(11)의 크기가 크고 서셉터(12)에 웨이퍼 안착홈(12a)을 형성하여 이 안착홈(12a)에 의해 웨이퍼(13)가 지지되도록 한 것이므로 대구경 웨이퍼의 열처리시 고열에 의한 열변형이 없으며, 가스흐름이 웨이퍼(13)의 상부에서 흐르게 되므로 균일한 공정이 이루어지는 장점을 있다.The resistance heating type heat treatment apparatus has a large size of the process chamber 11 and forms a wafer seating groove 12a in the susceptor 12 so that the wafer 13 is supported by the seating groove 12a. There is no thermal deformation due to high heat during the heat treatment, and the gas flow flows from the upper portion of the wafer 13, thereby providing a uniform process.
그러나 저항 가열식 열처리장치는 공정온도가 900℃이하로 한정되어 공정온도의 범위가 좁아 다양한 공정수행이 곤란하고, 저항 가열식이므로 공정챔버 내부의 온도를 공정온도까지 상승시켜 유지하기 위해 소요되는 시간이 길어지는 단점이 있다.However, the resistance heating type heat treatment device is limited to the process temperature of less than 900 ℃, the process temperature is narrow, it is difficult to perform a variety of processes, because the resistance heating type, it takes a long time to raise the temperature inside the process chamber to the process temperature There are disadvantages to losing.
또한 종래의 램프 가열식 및 저항 가열식 열처리장치는 가스가 상온 또는 저온상태에서 공정챔버 내부로 공급되는 것이므로 공정챔버내에서 급작스러운 온도변화에 따른 스트레스를 유발하는 문제점이 있었다.In addition, the conventional lamp-heated and resistance-heated heat treatment apparatus has a problem that the stress is caused by a sudden temperature change in the process chamber because the gas is supplied into the process chamber at room temperature or low temperature.
본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 웨이퍼의 대구경화에 적합하게 사용되어지고, 이에 따른 균일한 공정을 수행할 수 있는 반도체 웨이퍼 열처리장치를 제공하는 것이다.The present invention has been made to solve the above-mentioned conventional problems, and an object thereof is to provide a semiconductor wafer heat treatment apparatus which is suitably used for large-diameter wafers and can perform a uniform process accordingly.
또한 본 발명의 다른 목적은 챔버내의 공정온도 범위를 확대시켜 다양한 공정을 수행할 수 있는 반도체 웨이퍼 열처리장치를 제공하는 것이다.Another object of the present invention is to provide a semiconductor wafer heat treatment apparatus capable of performing various processes by expanding a process temperature range in a chamber.
도1은 종래의 램프가열식 열처리장치를 개략적으로 나타낸 단면구조도이다.Figure 1 is a schematic cross-sectional view showing a conventional lamp heating heat treatment apparatus.
도2는 종래의 램프가열식 열처리장치의 다른 타입을 개략적으로 나타낸 단면구조도이다.Figure 2 is a schematic cross-sectional view showing another type of conventional lamp heating type heat treatment apparatus.
도3은 종래의 열저항가열식 열처리장치를 개략적으로 나타낸 단면구조도이다.Figure 3 is a schematic cross-sectional view showing a conventional heat resistance heating apparatus.
도4는 본 발명에 따른 열처리장치를 나타낸 단면구조도이다.Figure 4 is a cross-sectional structural view showing a heat treatment apparatus according to the present invention.
※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing
1, 11, 21 : 공정챔버2, 12, 22 : 서셉터1, 11, 21: process chamber 2, 12, 22: susceptor
3, 13, 23 : 웨이퍼4, 28 : 램프3, 13, 23: wafer 4, 28: lamp
5 : 서포트링14, 29 : 열저항히터5: support ring 14, 29: heat resistance heater
24 : 진공흡착홈25 : 진공통로24: vacuum suction groove 25: vacuum passage
26 : 냉각홈27 : 냉각구멍26: cooling groove 27: cooling hole
30 : 온도센서31 : 가스유입구30: temperature sensor 31: gas inlet
32 : 가스배출구33 : 가스인젝터32 gas outlet 33 gas injector
34 : 가스히터35 : 리프터34 gas heater 35 lifter
36 : 냉각가스통로36: cooling gas passage
상기의 목적은 반도체 웨이퍼 열처리장치에 있어서, 밀폐된 공간을 형성하는 공정챔버와, 상기 공정챔버내에 고정설치되어 공정을 위한 웨이퍼가 놓여지는 서셉터와, 상기 서셉터에 설치되어 서셉터를 가열하는 열저항히터와, 상기 웨이퍼의 상부에 설치되어 공정챔버 내부의 온도를 공정에 필요한 온도로 상승시키는 램프와, 상기 공정챔버의 일측에 구비되어 가스를 내부로 공급하는 가스인젝터와, 상기 가스인젝터에 설치되어 공정챔버의 내부로 공급되는 가스를 예열하는 가스히터를 포함하여 됨을 특징으로 하는 반도체 웨이퍼 열처리장치에 의해 달성될 수 있다.The above object is to provide a semiconductor wafer heat treatment apparatus, comprising: a process chamber for forming an enclosed space, a susceptor fixed in the process chamber to place a wafer for processing, and installed in the susceptor to heat the susceptor; A heat resistance heater, a lamp installed on an upper portion of the wafer to raise a temperature inside a process chamber to a temperature required for a process, a gas injector provided at one side of the process chamber to supply gas into the inside, and a gas injector. It can be achieved by a semiconductor wafer heat treatment apparatus characterized in that it comprises a gas heater installed to preheat the gas supplied into the process chamber.
이하, 본 발명에 따른 바람직한 실시예를 첨부도면에 의하여 상세하게 설명한다. 도4는 본 발명의 반도체 웨이퍼 열처리장치를 나타낸 단면구조도로서, 밀폐된 공간을 갖는 공정챔버(21) 내부에 서셉터(22)가 고정되고, 이 서셉터(22)상에 웨이퍼(23)가 놓여지도록 되어 있다.Hereinafter, preferred embodiments of the present invention will be described in detail by the accompanying drawings. 4 is a cross-sectional structural view showing a semiconductor wafer heat treatment apparatus of the present invention, in which a susceptor 22 is fixed inside a process chamber 21 having a closed space, and a wafer 23 is placed on the susceptor 22. It is supposed to be placed.
웨이퍼(23)의 고정은 서셉터(22) 상면에 형성된 원형의 진공흡착홈(24)에 의해 이루어지는 것으로, 이 진공흡착홈(24)은 서셉터(22)를 하부로 관통한 진공통로(25)로 연결되어 이 진공통로(25)를 통해 진공흡착되도록 되어 있다.The wafer 23 is fixed by a circular vacuum suction groove 24 formed on an upper surface of the susceptor 22, and the vacuum suction groove 24 penetrates the susceptor 22 downwards. ) Is connected to the vacuum through the vacuum passage (25).
또한 서셉터(22)를 수직방향으로 관통하여 설치된 핀형태의 리프터(35)에 의해 웨이퍼(23)가 서셉터(22)상에 로딩 및 언로딩 가능하도록 되어 있다.In addition, the wafer 23 can be loaded and unloaded on the susceptor 22 by a pin lifter 35 provided through the susceptor 22 in the vertical direction.
서셉터(22) 및 웨이퍼(23)의 냉각은 서셉터(22) 상면과 서셉터(22)의 내부에 형성된 냉각홈(26) 및 냉각구멍(27)으로 N2, He 또는 Ar 등의 냉각가스를 공급함으로써 이루어지고, 상기 냉각홈(26)은 서셉터(22)의 하부로 관통하는 냉각가스통로(36)와 연결되어 이 냉각가스통로(36)를 통해 냉각가스가 공급되도록 되어 있다.Standing in the cooling of the susceptor 22 and the wafer 23 is a susceptor 22, an upper surface and a susceptor cooling formed within the 22 groove 26 and cooling holes 27 with N 2, cooled, such as He or Ar It is made by supplying gas, and the cooling groove 26 is connected to the cooling gas passage 36 passing through the lower portion of the susceptor 22 so that the cooling gas is supplied through the cooling gas passage 36.
공정챔버(21)내의 공정온도 유지는 웨이퍼(23)의 상부에 설치된 할로겐램프(28)와, 서셉터(22)에 설치된 열저항히터(29)와, 서셉터(22)에 설치된 온도센서(30)로 이루어지고, 할로겐램프(28)와 열저항히터(29)의 가열온도범위를 특성에 맞도록 설정하여 온도제어 및 공정온도범위를 다양하게 조절할 수 있도록 되어 있다.The process temperature in the process chamber 21 is maintained by the halogen lamp 28 provided on the wafer 23, the heat resistance heater 29 installed in the susceptor 22, and the temperature sensor installed in the susceptor 22. 30), and the heating temperature range of the halogen lamp 28 and the heat resistance heater 29 is set to suit the characteristics so that the temperature control and the process temperature range can be adjusted in various ways.
예를 들면 급속가열 및 급냉이 가능한 할로겐램프(28)는 500∼1200℃ 의 고온을 유지할 수 있도록 설정하고, 온도상승율이 비교적 낮은 열저항히터(29)는 상온에서부터 500℃ 이하를 유지할 수 있도록 설정함으로써 두 개의 할로겐램프(28)와 열저항히터(29)를 모두 이용하거나 어느 하나만을 이용하는 것에 이해 다양한 공정온도가 설정되고, 이로써 웨이퍼(23)를 열처리할 수 있는 공정온도범위의 폭이 증대되어진다.For example, the halogen lamp 28 capable of rapid heating and quenching is set to maintain a high temperature of 500 to 1200 ° C., and the heat resistance heater 29 having a relatively low temperature rise is set to maintain 500 ° C. or less from room temperature. By using the two halogen lamps 28 and the heat resistance heater 29 or using only one of them, various process temperatures are set, thereby increasing the width of the process temperature range in which the wafer 23 can be heat treated. Lose.
이때 상기 할로겐램프(28)의 설치 구조는 서클램프(Circle Lamp) 타입으로 하는 것이 바람직하고, 리니어램프(Linear Lamp) 타입 또는 라이트 파이프(Light Pipes) 타입도 설치 가능하며, 할로겐램프(28)의 설치 형태에 따라 공정챔버(21)의 형태도 그에 맞도록 설계되어질 것이다.At this time, the installation structure of the halogen lamp 28 is preferably a circle lamp (Circle Lamp) type, it is also possible to install a linear lamp (Linear Lamp) type or a light pipe (Light Pipes) type, the halogen lamp (28) Depending on the installation form, the shape of the process chamber 21 will also be designed accordingly.
공정에 필요한 가스공급은 공정챔버(21)의 하부 양쪽에 구비된 가스 유입구(Gas Inlet)(31)와 가스 배출구(Gas Outlet)(32)를 통해 이루어지고, 공정챔버(21)의 일측벽에 가스인젝터(Gas Injector)(33)를 설치하여 공급할 수도 있게 하며, 상기 가스인젝터(33)의 가스공급라인상에 가스히터(34)를 설치하여 공정챔버(21)내로 가스를 공급하기 전에 공정온도에 따라 50∼800℃ 범위내에서 예열시키도록 되어 있다.Gas supply required for the process is made through the gas inlet 31 and the gas outlet 32 provided on both lower sides of the process chamber 21, and on one side wall of the process chamber 21. It is also possible to install and supply a gas injector 33, and to install the gas heater 34 on the gas supply line of the gas injector 33 to process gas before supplying the gas into the process chamber 21. Preheating is performed within the range of 50 to 800 ° C.
이때 상기 가스인젝터(33)는 공급되는 가스, 예를 들면 질소계 가스, 산소계 가스 및 불활성기체를 보다 활성화시키도록 스테인레스스틸이나 석영으로 제조하는 것이 바람직하다.At this time, the gas injector 33 is preferably made of stainless steel or quartz to activate the gas supplied, for example, nitrogen-based gas, oxygen-based gas and inert gas more.
이러한 구성의 반도체 웨이퍼 열처리장치에 의하면, 공정챔버(21)내의 공정온도를 웨이퍼(23)의 상부에 설치된 할로겐램프(28)와 서셉터(22)에 설치된 열저항히터(29)의 제어로 유지함으로써 공정온도범위의 폭이 넓어지게 되고, 이로써 다양한 공정온도범위에서의 열처리공정이 가능하게 된다.According to the semiconductor wafer heat treatment apparatus having such a structure, the process temperature in the process chamber 21 is maintained under the control of the halogen lamp 28 provided on the wafer 23 and the heat resistance heater 29 provided on the susceptor 22. As a result, the width of the process temperature range is widened, thereby enabling a heat treatment process at various process temperature ranges.
즉 할로겐램프(28)는 특성상 고온유지(1200℃ 이하)에 적합하고, 열저항히터(29)는 저온유지(500℃ 이하)에 적합하므로 이들을 개별적으로 사용하여 고온공정시는 할로겐램프(28)를 사용하고, 저온공정시에는 열저항히터(29)를 선택적으로 사용할 수 있다.That is, since the halogen lamp 28 is suitable for high temperature holding (below 1200 ° C), and the heat resistance heater 29 is suitable for low temperature holding (500 ° C or less), the halogen lamp 28 is used separately during the high temperature process. In the low temperature process, the heat resistance heater 29 may be selectively used.
할로겐램프(28)와 열저항히터(29)를 동시에 사용하여 고온공정을 수행하는 경우에는 열저항히터(29)를 항상 500℃ 이하로 유지시켜 공정챔버(21)내의 온도를 일정수준으로 상승시킨 상태에서 할로겐램프(28)를 이용하여 고온으로 유지하게 되면 온도변화가 크지 않으면서도 신속하게 고온의 공정온도로 상승되므로 보다 균일한 공정온도를 유지할 수 있다.When the high temperature process is performed using the halogen lamp 28 and the heat resistance heater 29 at the same time, the heat resistance heater 29 is always maintained at 500 ° C. or lower to raise the temperature in the process chamber 21 to a predetermined level. If the state is maintained at a high temperature by using the halogen lamp 28, it is possible to maintain a more uniform process temperature since the temperature change is rapidly increased to a high process temperature without a large change.
그리고 공정챔버(21) 내부가 열저항히터(29)에 의해 예열된 상태에서 웨이퍼(23)가 로딩되고, 이 후에 할로겐램프(28)가 고온으로 가열하는 것이므로 온도의 급변화로 인한 웨이퍼(23)의 스트레스가 감소된다.Since the inside of the process chamber 21 is preheated by the heat resistance heater 29, the wafer 23 is loaded, and since the halogen lamp 28 is heated to a high temperature, the wafer 23 is caused by a sudden change in temperature. ) Stress is reduced.
또한 본 발명은 서셉터(22)에 설치된 리프터(35)에 의해 웨이퍼(23)가 서셉터(22)상에 로딩 및 언로딩되고, 웨이퍼(23)는 진공통로(25)를 통한 진공흡착홈(24)에 의해 진공흡착됨과 동시에 냉각가스통로(36)를 통해 냉각홈(26)으로 공급되는 냉각가스에 의해 냉각된다.In addition, according to the present invention, the wafer 23 is loaded and unloaded on the susceptor 22 by the lifter 35 installed in the susceptor 22, and the wafer 23 is vacuum suction groove through the vacuum passage 25. At the same time as the vacuum suction by (24) is cooled by the cooling gas supplied to the cooling groove 26 through the cooling gas passage (36).
따라서 고열에 의한 웨이퍼(23)의 열변형이 감소되는 것이고, 특히 웨이퍼의 대구경화에 대처하여 열변형을 최소화하게 되며, 서셉터(22) 내부에 형성된 냉각구멍(27)으로는 공정시 냉각가스를 공급하여 웨이퍼(23)를 냉각시Therefore, the thermal deformation of the wafer 23 due to high heat is reduced, and in particular, the thermal deformation is minimized in response to the large diameter of the wafer, and the cooling hole 27 formed in the susceptor 22 is a cooling gas during the process. When cooling the wafer 23 by supplying
키게 되고, 공정후에는 서셉터(22)를 냉각시키는 기능을 한다.After the process, the susceptor 22 is cooled.
또한 본 발명은 가스의 주입시 가스인젝터(33)에 설치된 가스히터(34)가 가스를 예열하여 일차적으로 활성화시킨 후 주입되게 함으로써 가스반응의 안정화로 균일한 공정이 수행되는 것이고, 가스가 미리 예열되어 주입됨으로써 공정챔버 내에서의 온도변화가 감소되어 온도변화에 따른 스트레스가 해소되어진다.In addition, the present invention is a gas heater 34 installed in the gas injector 33 during the injection of the gas is pre-heated by activating the gas first to be injected and then the uniform process is performed to stabilize the gas reaction, the gas is preheated in advance As a result of the injection, the temperature change in the process chamber is reduced and the stress caused by the temperature change is eliminated.
이상에서와 같이 본 발명에 따른 반도체 웨이퍼 열처리장치에 의하면, 공정챔버내의 공정온도범위가 넓어져 다양한 공정수행이 가능하고, 고온에 의한 열변형 및 온도의 급변화에 의한 스트레스가 감소되어 안정된 공정이 이루어지며, 특히 대구경의 웨이퍼 열처리시 공정의 균일성 및 품질을 향상시키는데 적합하다.As described above, according to the semiconductor wafer heat treatment apparatus according to the present invention, the process temperature range in the process chamber is widened, and various processes can be performed, and a stable process is achieved by reducing stress due to thermal deformation and temperature change due to high temperature. In particular, it is suitable for improving the uniformity and quality of the process during the heat treatment of large diameter wafers.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019960041741A KR100203780B1 (en) | 1996-09-23 | 1996-09-23 | Heat treating apparatus for semiconductor wafer |
| JP9711097A JPH10107018A (en) | 1996-09-23 | 1997-04-15 | Semiconductor wafer heat treatment apparatus |
| DE1997116707 DE19716707A1 (en) | 1996-09-23 | 1997-04-21 | Semiconductor crystal wafer heat treatment device |
| GB9710204A GB2317497A (en) | 1996-09-23 | 1997-05-19 | Semiconductor wafer thermal processing apparatus |
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| KR100203780B1 true KR100203780B1 (en) | 1999-06-15 |
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| JP6960344B2 (en) * | 2018-01-26 | 2021-11-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment equipment |
| JP2019216287A (en) * | 2019-10-01 | 2019-12-19 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment device and heat treatment method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010556A1 (en) * | 1991-11-22 | 1993-05-27 | Tadahiro Ohmi | Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor |
| JP3234091B2 (en) * | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | Surface treatment equipment |
-
1996
- 1996-09-23 KR KR1019960041741A patent/KR100203780B1/en not_active IP Right Cessation
-
1997
- 1997-04-15 JP JP9711097A patent/JPH10107018A/en active Pending
- 1997-04-21 DE DE1997116707 patent/DE19716707A1/en not_active Ceased
- 1997-05-19 GB GB9710204A patent/GB2317497A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308193C (en) * | 2004-12-17 | 2007-04-04 | 上海圣亚照明有限公司第一分公司 | Disposable oxygenating drinking water bottle |
| KR100738873B1 (en) | 2006-02-07 | 2007-07-12 | 주식회사 에스에프에이 | Chemical vapor deposition apparatus for flat display |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10107018A (en) | 1998-04-24 |
| KR19980022560A (en) | 1998-07-06 |
| GB9710204D0 (en) | 1997-07-09 |
| DE19716707A1 (en) | 1998-04-02 |
| GB2317497A (en) | 1998-03-25 |
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