FR2959757A1 - Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber - Google Patents

Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber Download PDF

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Publication number
FR2959757A1
FR2959757A1 FR1001900A FR1001900A FR2959757A1 FR 2959757 A1 FR2959757 A1 FR 2959757A1 FR 1001900 A FR1001900 A FR 1001900A FR 1001900 A FR1001900 A FR 1001900A FR 2959757 A1 FR2959757 A1 FR 2959757A1
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FR
France
Prior art keywords
diffuser
heating unit
chamber
shower
external chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1001900A
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French (fr)
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FR2959757B1 (en
Inventor
Franck Pouch
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GLOBAL TECHNOLOGIES
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GLOBAL TECHNOLOGIES
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Publication date
Application filed by GLOBAL TECHNOLOGIES filed Critical GLOBAL TECHNOLOGIES
Priority to FR1001900A priority Critical patent/FR2959757B1/en
Publication of FR2959757A1 publication Critical patent/FR2959757A1/en
Application granted granted Critical
Publication of FR2959757B1 publication Critical patent/FR2959757B1/en
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Fibers (AREA)

Abstract

The pyrolytic reactor comprises an external chamber, a precursor injecting system having a diffuser (15) such as a shower, a carrier substrate facing a side of the diffuser, an upper heating unit, a lower heating unit, and an internal chamber (10) fixed with an interior of the external chamber. The external chamber is provided with an upper window in comparison with an upper side of the substrate, and a lower window in comparison with a lower side of the substrate. The upper heating unit is actuated through the upper window by radiation. The pyrolytic reactor comprises an external chamber, a precursor injecting system having a diffuser (15) such as a shower, a carrier substrate facing a side of the diffuser, an upper heating unit, a lower heating unit, and an internal chamber (10) fixed with an interior of the external chamber. The external chamber is provided with an upper window in comparison with an upper side of the substrate, and a lower window in comparison with a lower side of the substrate. The upper heating unit is actuated through the upper window by radiation, and the lower heating unit is actuated through the lower window by radiation. The diffuser and the substrate are placed in the internal chamber. The diffuser is fed by an injection pipe provided with a preheating module.
FR1001900A 2010-05-04 2010-05-04 PYROLYTIC REACTOR WITH BILATERAL HEATING Expired - Fee Related FR2959757B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1001900A FR2959757B1 (en) 2010-05-04 2010-05-04 PYROLYTIC REACTOR WITH BILATERAL HEATING

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1001900A FR2959757B1 (en) 2010-05-04 2010-05-04 PYROLYTIC REACTOR WITH BILATERAL HEATING

Publications (2)

Publication Number Publication Date
FR2959757A1 true FR2959757A1 (en) 2011-11-11
FR2959757B1 FR2959757B1 (en) 2012-08-03

Family

ID=42732010

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1001900A Expired - Fee Related FR2959757B1 (en) 2010-05-04 2010-05-04 PYROLYTIC REACTOR WITH BILATERAL HEATING

Country Status (1)

Country Link
FR (1) FR2959757B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3016640A1 (en) * 2014-01-23 2015-07-24 Aton Ind VACUUM CHAMBER WITH INCLINED ROOM

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503807A (en) * 1983-06-01 1985-03-12 Nippon Telegraph & Telephone Public Corporation Chemical vapor deposition apparatus
EP0445596A2 (en) * 1990-03-09 1991-09-11 Applied Materials, Inc. Double-dome reactor for semiconductor processing
FR2727693A1 (en) * 1994-12-06 1996-06-07 Centre Nat Rech Scient REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD)
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5710407A (en) * 1993-01-21 1998-01-20 Moore Epitaxial, Inc. Rapid thermal processing apparatus for processing semiconductor wafers
GB2317497A (en) * 1996-09-23 1998-03-25 Samsung Electronics Co Ltd Semiconductor wafer thermal processing apparatus
WO1999043875A1 (en) * 1998-02-27 1999-09-02 Super Silicon Crystal Research Institute Corp. Epitaxial growth apparatus
EP1422317A1 (en) * 2001-08-01 2004-05-26 Tokyo Electron Limited Gas treating device and gas treating method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503807A (en) * 1983-06-01 1985-03-12 Nippon Telegraph & Telephone Public Corporation Chemical vapor deposition apparatus
EP0445596A2 (en) * 1990-03-09 1991-09-11 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5710407A (en) * 1993-01-21 1998-01-20 Moore Epitaxial, Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
FR2727693A1 (en) * 1994-12-06 1996-06-07 Centre Nat Rech Scient REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD)
GB2317497A (en) * 1996-09-23 1998-03-25 Samsung Electronics Co Ltd Semiconductor wafer thermal processing apparatus
WO1999043875A1 (en) * 1998-02-27 1999-09-02 Super Silicon Crystal Research Institute Corp. Epitaxial growth apparatus
EP1422317A1 (en) * 2001-08-01 2004-05-26 Tokyo Electron Limited Gas treating device and gas treating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3016640A1 (en) * 2014-01-23 2015-07-24 Aton Ind VACUUM CHAMBER WITH INCLINED ROOM

Also Published As

Publication number Publication date
FR2959757B1 (en) 2012-08-03

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