FR2959757A1 - Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber - Google Patents
Pyrolytic reactor for synthesizing carbon fibers, comprises external chamber, precursor injecting system having diffuser e.g. shower, carrier substrate facing a side of diffuser, upper heating unit, lower heating unit, and internal chamber Download PDFInfo
- Publication number
- FR2959757A1 FR2959757A1 FR1001900A FR1001900A FR2959757A1 FR 2959757 A1 FR2959757 A1 FR 2959757A1 FR 1001900 A FR1001900 A FR 1001900A FR 1001900 A FR1001900 A FR 1001900A FR 2959757 A1 FR2959757 A1 FR 2959757A1
- Authority
- FR
- France
- Prior art keywords
- diffuser
- heating unit
- chamber
- shower
- external chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Fibers (AREA)
Abstract
The pyrolytic reactor comprises an external chamber, a precursor injecting system having a diffuser (15) such as a shower, a carrier substrate facing a side of the diffuser, an upper heating unit, a lower heating unit, and an internal chamber (10) fixed with an interior of the external chamber. The external chamber is provided with an upper window in comparison with an upper side of the substrate, and a lower window in comparison with a lower side of the substrate. The upper heating unit is actuated through the upper window by radiation. The pyrolytic reactor comprises an external chamber, a precursor injecting system having a diffuser (15) such as a shower, a carrier substrate facing a side of the diffuser, an upper heating unit, a lower heating unit, and an internal chamber (10) fixed with an interior of the external chamber. The external chamber is provided with an upper window in comparison with an upper side of the substrate, and a lower window in comparison with a lower side of the substrate. The upper heating unit is actuated through the upper window by radiation, and the lower heating unit is actuated through the lower window by radiation. The diffuser and the substrate are placed in the internal chamber. The diffuser is fed by an injection pipe provided with a preheating module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1001900A FR2959757B1 (en) | 2010-05-04 | 2010-05-04 | PYROLYTIC REACTOR WITH BILATERAL HEATING |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1001900A FR2959757B1 (en) | 2010-05-04 | 2010-05-04 | PYROLYTIC REACTOR WITH BILATERAL HEATING |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2959757A1 true FR2959757A1 (en) | 2011-11-11 |
FR2959757B1 FR2959757B1 (en) | 2012-08-03 |
Family
ID=42732010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1001900A Expired - Fee Related FR2959757B1 (en) | 2010-05-04 | 2010-05-04 | PYROLYTIC REACTOR WITH BILATERAL HEATING |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2959757B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3016640A1 (en) * | 2014-01-23 | 2015-07-24 | Aton Ind | VACUUM CHAMBER WITH INCLINED ROOM |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4503807A (en) * | 1983-06-01 | 1985-03-12 | Nippon Telegraph & Telephone Public Corporation | Chemical vapor deposition apparatus |
EP0445596A2 (en) * | 1990-03-09 | 1991-09-11 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
FR2727693A1 (en) * | 1994-12-06 | 1996-06-07 | Centre Nat Rech Scient | REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD) |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
US5710407A (en) * | 1993-01-21 | 1998-01-20 | Moore Epitaxial, Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
GB2317497A (en) * | 1996-09-23 | 1998-03-25 | Samsung Electronics Co Ltd | Semiconductor wafer thermal processing apparatus |
WO1999043875A1 (en) * | 1998-02-27 | 1999-09-02 | Super Silicon Crystal Research Institute Corp. | Epitaxial growth apparatus |
EP1422317A1 (en) * | 2001-08-01 | 2004-05-26 | Tokyo Electron Limited | Gas treating device and gas treating method |
-
2010
- 2010-05-04 FR FR1001900A patent/FR2959757B1/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4503807A (en) * | 1983-06-01 | 1985-03-12 | Nippon Telegraph & Telephone Public Corporation | Chemical vapor deposition apparatus |
EP0445596A2 (en) * | 1990-03-09 | 1991-09-11 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5710407A (en) * | 1993-01-21 | 1998-01-20 | Moore Epitaxial, Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
FR2727693A1 (en) * | 1994-12-06 | 1996-06-07 | Centre Nat Rech Scient | REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD) |
GB2317497A (en) * | 1996-09-23 | 1998-03-25 | Samsung Electronics Co Ltd | Semiconductor wafer thermal processing apparatus |
WO1999043875A1 (en) * | 1998-02-27 | 1999-09-02 | Super Silicon Crystal Research Institute Corp. | Epitaxial growth apparatus |
EP1422317A1 (en) * | 2001-08-01 | 2004-05-26 | Tokyo Electron Limited | Gas treating device and gas treating method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3016640A1 (en) * | 2014-01-23 | 2015-07-24 | Aton Ind | VACUUM CHAMBER WITH INCLINED ROOM |
Also Published As
Publication number | Publication date |
---|---|
FR2959757B1 (en) | 2012-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
ST | Notification of lapse |
Effective date: 20210105 |