EP0427934A2 - Module monolithique de cellules photovoltaiques connectées en série et en parallèle - Google Patents

Module monolithique de cellules photovoltaiques connectées en série et en parallèle Download PDF

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Publication number
EP0427934A2
EP0427934A2 EP90117189A EP90117189A EP0427934A2 EP 0427934 A2 EP0427934 A2 EP 0427934A2 EP 90117189 A EP90117189 A EP 90117189A EP 90117189 A EP90117189 A EP 90117189A EP 0427934 A2 EP0427934 A2 EP 0427934A2
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Prior art keywords
conductive
substrate
fluid
pattern
film
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EP90117189A
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German (de)
English (en)
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EP0427934A3 (en
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Robert Oswald
John Mongon
Peggy Weiss
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Solarex Corp
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Solarex Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Definitions

  • the present invention relates to photovoltaic cells and, in particular, to an apparatus and a method for forming a monolithic interconnected photovoltaic module.
  • photovoltaic cells that convert solar radiation into usable electrical energy can be fabricated by sandwiching certain semiconductor structures, such as, for example, the amorphous silicon PIN structure disclosed in U.S. Patent No. 4,064,521, between two electrodes.
  • One of the electrodes typically is transparent to permit solar radiation to reach the semiconductor material.
  • This "front” electrode (or contact) can be comprised of a thin film (i.e., less than 10 micrometers in thickness) of transparent conductive oxide material, such as tin oxide, and usually is formed between a transparent supporting substrate made of glass or plastic and the photovoltaic semiconductor material.
  • the "back” electrode (or contact) which is formed on the surface of the semiconductor material opposite the front electrode, generally comprises a thin film of metal such as, for example, aluminum. Alternatively, the back electrode can be made of a transparent material such as tin oxide.
  • Fig. 1 shows photovoltaic module 10 comprised of a plurality of series-connected photovoltaic cells 12 formed on a transparent substrate 14 and subjected to solar radiation 16 passing through substrate 14.
  • Each photovoltaic cell 12 includes a front electrode 18 of transparent conductive oxide, a photovoltaic element 20 made of a semiconductor material, such as, for example, hydrogenated amorphous silicon, and a back electrode 22 of a metal such as aluminum or of a transparent material such as tin oxide.
  • Photovoltaic element 20 can comprise, for example, a PIN structure. Adjacent front electrodes 18 are separated by first grooves 24, which are filled with the semiconductor material of photovoltaic elements 20. The dielectric semiconductor material in first grooves 24 electrically insulates adjacent front electrodes 18.
  • Adjacent photovoltaic elements 20 are separated by second grooves 26, which are filled with the metal of back electrodes 22 to provide a series connection between the front electrode of one cell and the back electrode of an adjacent cell. Adjacent back electrodes 22 are electrically isolated from one another by third grooves 28.
  • the thin-film photovoltaic module of Fig. 1 typically is manufactured by a deposition and patterning method.
  • a suitable technique for depositing a semiconductor material on a substrate is glow discharge in silane, as described, for example, in U.S. Patent No. 4,064,521.
  • Several patterning techniques are conventionally known for forming the grooves separating adjacent photovoltaic cells, including silkscreening with resist masks, etching with positive or negative photoresists, mechanical scribing, electrical discharge scribing, and laser scribing. Laser scribing and silkscreening methods have emerged as practical, cost-effective, high-volume processes for manufacturing thin-film semiconductor devices, including amorphous silicon photovoltaic modules.
  • Laser scribing has an additional advantage over silkscreening because it can separate adjacent cells in a multi-cell device by forming separation grooves having a width less than 25 micrometers, compared to the typical silkscreened groove width of approximately 380-500 micrometers.
  • a photovoltaic module fabricated with laser scribing thus has a large percentage of its surface area actively engaged in producing electricity and, consequently, has a higher efficiency than a module fabricated by silkscreening.
  • a method of laser scribing the layers of a photovoltaic module is disclosed in U.S. Patent No. 4,292,092.
  • a method of fabricating a multi-cell photovoltaic module using laser scribing comprises: depositing a continous film of transparent conductive oxide on a transparent substrate 14, scribing first grooves 24 to separate the transparent conductive oxide film into front electrodes 18, fabricating a continuous film of semiconductor material on top of front electrodes 18 and in first grooves 24, scribing second grooves 26 parallel and adjacent to first grooves 24 to separate the semiconductor material into individual photovoltaic elements 20 (or “segments") and expose portions of front electrodes 18 at the bottoms of the second grooves, forming a continuous film of metal on segments 20 and in second grooves 26 so that the metal forms electrical connections with front electrodes 18, and then scribing third grooves 28 parallel and adjacent to second grooves 26 to separate and electrically isolate adjacent back electrodes 22.
  • a distinct disadvantage of photovoltaic modules of the prior art has heretofore been the unavailability of large photovoltaic modules having the flexibility of producing any desired voltage output.
  • large photovoltaic modules it is meant such modules on the order of one foot square and larger.
  • small voltage output it is meant 12-15V or less.
  • the present invention is intended to provide a photovoltaic module, and a method for making same, that is a large photovoltaic module, producing an optimal width of the individual cells to maximize their power output.
  • photovoltaic modules it is also desirable in some applications, such as the integration of photovoltaic modules into automobile sunroofs, to increase the transmittance of light through the photovoltaic module.
  • This can be accomplished to a certain extent by making both the front and rear contacts (or “electrodes") transparent.
  • Such transparent contacts can be made of, for example, tin oxide.
  • the transmittance of the photovoltaic module can also be increased by reducing the width of each cell in the module to therefore increase the number of scribe lines in the photovoltaic module, hence its light transmittance. As discussed above, decreasing cell width has the effect of increasing the overall voltage of the resulting series-connected photovoltaic module. Such high voltage is not desired for some applications.
  • the present invention provide a photovoltaic module having individual cells of reduced width while maintaining the output voltage of the photovoltaic module at any desired level.
  • the present invention also relates to a method for depositing an elongated narrow band conductive pattern.
  • conductive patterns were deposited by a silkscreening method.
  • Silkscreening is wasteful of conductive fluid used to make a conductive pattern, is not easily automated, and produces poor reproducibility. Further, it is difficult to control the thickness of patterns produced.
  • the present invention is intended to provide a method for depositing an elongated conductive pattern that is not wasteful of conductive fluid used, is susceptible to computer control to produce reproducible patterns and which produces a pattern that has a thickness that can be easily controlled.
  • a thin-film semiconductor device of the present invention comprises a substrate and a front contact layer disposed on the substrate including a plurality of segments separated by first scribe lines, a plurality of the segments forming a submodule, and at least one of the submodules forming a module.
  • First bus means is provided for connecting in parallel the submodules.
  • a thin film of a semiconductor material is disposed on the front contact layer and a back contact layer is disposed on the thin film of semiconductor material.
  • the back contact layer is scribed along second scribe lines corresponding to and adjacent the first scribe lines.
  • Interconnection means are provided for interconnecting adjacent areas of the front and back contact layers.
  • a method for depositing an elongated narrow band solid conductive pattern on a semiconductor substrate.
  • the method comprises depositing conductive fluid comprising a conductive metallic or organometallic component in an elongated narrow band pattern on such substrates and causing such deposited fluid to solidify to form a solid elongated narrow band pattern on such substrate in substantially the same pattern as that formed by such conductive fluid.
  • a method for depositing an elongated narrow band conductive pattern on a semiconductive substrate.
  • the method comprises depositing conductive fluid comprising a conductive metallic or organometallic component and carrier fluid in a narrow band pattern on a semiconductor substrate and substantially removing the carrier fluid from such conductive fluid deposited on the substrate to form a solid relatively immobile pattern of the conductive metallic or organometallic component on such substrate.
  • Fig. 2(g) is a schematic cross sectional view of a portion of a multi-cell thin-film photovoltaic module, designated generally by reference numeral 110.
  • Photovoltaic module 110 is comprised of a plurality of series-connected photovoltaic cells 112 formed on a flat, transparent substrate 114. In operation, photovoltaic module 110 generates electricity in response to solar radiation 116 passing through substrate 114, which preferably is formed of glass.
  • Each photovoltaic cell 112 includes a front electrode segment 118 of transparent conductive oxide, a photovoltaic element 120 made of semiconductor material, such as, for example, hydrogenated amorphous silicon, and a back electrode 122 of a metal such as aluminum or a conductive material such as tin oxide.
  • Adjacent front electrode segments 118 are separated by first grooves 124, which are filled with the semiconductor material of photovoltaic elements 120. Adjacent photovoltaic elements 120 are separated by second grooves 126 and also by third grooves 128. An inactive portion 130 of semiconductor material is positioned between second groove 126 and third groove 128. Portions 130 are "inactive" in the sense that they do not contribute to the conversion of solar radiation 116 into electricity. Second grooves 126 are filled with the material of back electrodes 122 to provide a series connection between the front electrode of one cell and the back electrode of an adjacent cell. Gaps 129, located at the tops of third grooves 128, separate and electrically isolate adjacent back electrodes 122.
  • a substantially continuous film 132 of transparent conductive oxide material preferably fluorinated tin oxide, is fabricated on transparent substrate 114 as shown in Fig. 2(a).
  • Conductive oxide film 132 can be fabricated in a manner well known in the art, for example, by chemical vapor deposition. The thickness of the transparent conductive oxide film will vary depending upon the desired application of the photovoltaic module.
  • Conductive oxide film 132 then is scribed with a laser to ablate the conductive oxide material along a first predetermined pattern of lines and form preferably parallel first grooves 124, which divide film 132 into a plurality of parallel front electrodes 118, as shown in Fig. 2(b).
  • U.S. Patent No. 4,292,092 discloses one suitable laser scribing technique, although certainly not the only suitable technique. Scribing can be performed either by moving the beam of the laser with respect to the substrate or by mounting the substrate on a X-Y table that is movable with respect to the beam of the laser. Scribing preferably is done from the front (through substrate 114) but can be done from the back (directly on conductive oxide film 132) as well.
  • First grooves 124 preferably are about 25 micrometers in width.
  • a front contact layer as shown in accordance with the present invention is disposed on a substrate.
  • the front contact layer in accordance with the present invention includes a plurality of segments 118 separated by first scribe lines 124.
  • An isolation scribe 301 (as shown in dotted outline) is provided to ensure that the adjacent segments are not short-circuited to one another.
  • segments 110 are oriented to one another and separated by first scribe lines 124.
  • a plurality of segments 118 are grouped together to form a submodule 304. At least one of the submodules 304 are grouped together to form a module.
  • the two are co-extensive.
  • connection stripe 306 include solder pads 308 to which wires can be connected through soldering, for example, to allow the module to be connected to equipment (not shown) to be powered by the module.
  • the two submodules 304 and 304′ can be separated by cutting them apart along cut-line 311.
  • first bus means 310 are provided to interconnect submodules 304′ and 304 ⁇ .
  • First bus means 310 are made sufficiently long and so oriented so as to place the first and second submodules in parallel connection with each other.
  • each submodule is interconnected and the negative sides of each submodule 304′ and 304 ⁇ are interconnected to form a single module 314.
  • the voltage output of the resulting module is the same as the voltage output of each of its constituent two submodules.
  • the current output of the module is twice that of the current output of its two constituent submodules.
  • Fig. 5 shows another embodiment of the present invention wherein four submodules 304-304′′′ have been fabricated on a single substrate, each including a plurality of segments 118 separated by scribe lines 124. Connection strips 306 are provided at either end of each submodule to provide a collection and connection point for the power output from each series-connected submodule.
  • the individual submodules can be separated or cut apart along cut-lines 311 and 311′.
  • first bus means 310 are provided to interconnect submodules 304 and 304′ in parallel to form module 314 and interconnect submodules 304 ⁇ and 304′′′ in parallel to form module 314′.
  • the present example relates to the fabrication of two separate submodules on a two foot by four foot substrate.
  • Such an apparatus is shown, for example in Fig. 3. It has been calculated that two submodules could be disposed on substrate, each having 28 segments. The individual segment sizes would thus be .375" x 47" (.953 cm x 119.38 cm). Given this segment size, the individual segment area would be 114 cm2. It has been calculated that V LD would be 15V and that I LD would be 1.200 amps for each submodule, where LD refers to the value "at load”.
  • the individual submodules may be separated from one another by, for example, cutting along cut-line 310.
  • the present example relates to the fabrication of a single module comprising two submodules, as shown in Fig. 4. It has been calculated that two submodules could be disposed on a substrate of two foot by four foot dimensions. Each submodule would include 28 segments .388" (.985 cm) x 46.50" (118.11 cm) in size. These segment dimensions provide a segment area of 116.33 cm2 and a submodule area of 3257.24 cm2.
  • the V LD is calculated as 15 V and the I LD is 1.233 amps.
  • a module having a V LD of 15 V can be achieved having an I LD of 2.466 amps.
  • the present example relates to the fabrication of four separate submodules on a two foot by four foot substrate as shown, for example, in Fig. 5. It has been calculated that four submodules could be disposed on the substrate, each having 28 segments. The individual segment sizes would thus be .375" (.953 cm) x 23" (58.42 cm) to provide an individual segment area of 55.67 cm2 and a submodule area of 1559 cm2. It has been calculated that the V LD for each submodule would be 15 V and a I LD of 590 mA for each submodule.
  • the individual submodules can then be separated along cut lines 311 and 311′ as shown in Fig. 5 to separate the four submodules from one another.
  • the present example relates to the fabrication of two modules, each including two submodules, on a two foot by four foot substrate, as shown, for example, in Fig. 6. It has been calculated that four submodules could be disposed on a two foot by four foot substrate, each submodule including 28 segments .388 in. (.985 cm) x 22.5 in. (57.15 cm) in size. Such segment dimensions produce a segment area of 56.32 cm2 and a submodule area of 1577 cm2.
  • the V LD is calculated as V LD at 15 V and the L LD is .597 amps.
  • a module having a V LD of 15 V can be achieved having a L LD of 1.190 amps.
  • the two modules, 314 and 314′, each including two parallel connected submodules, can be separated along a cut line.
  • the first bus means is accomplished by a method in accordance with the present invention for depositing an elongated narrow band pattern on a substrate.
  • the conductive patterns of this invention comprise the connector strips and bus bars and are made of conductive materials.
  • the conductive patterns are generally made by depositing conductive fluid on a substrate which conductive fluid comprises a conductive metallic or organometallic component such as silver, copper, nickel, aluminum, gold, platinum, palladium, or mixtures thereof.
  • the conductive fluid may also preferably comprise a carrier fluid which aids in the transmission of the conductive metallic or organometallic components.
  • the conductive fluid should provide a conductive fluid which is relatively homogeneous and of proper viscosity for deposition in the desired pattern. The viscosity should not be so low as to provide a runny fluid which is difficult to control or which might separate out various components, nor should the viscosity be so high as to plug deposition equipment or be difficult to pattern evenly.
  • the carrier fluid can be removed from the conductive fluid at conditions which are not extreme and would not lead to deterioration of the conductive material or the substrate. It is preferable that the carrier fluid be removable by subjecting the conductive fluid to moderate heat for a short period of time.
  • the conductive fluid may desirably also comprise glass frits which can help form a conductive material having improved mechanical strength and adhesion properties to the substrate.
  • glass frits When glass frits are used, it is desirable to heat the conductive fluid for a period after deposition on the substrate to sinter the glass frit and form conductive material having the desired properties.
  • the temperature and time necessary for this step may vary depending on the nature of the conductive fluid including the frit but generally range from about 500°C to about 700°C.
  • Metech 3221 manufactured by Metech, Inc. of Elverson, Pennsylvania, USA, has been found to be a suitable conductive fluid for this ype of process and is a paste comprised of silver particles and glass frit in binder and solvent.
  • the manufacturer represents this material to be 65% by weight silver having a resistivity of ⁇ 2.0 milliohms/sq. and a viscosity of 4-8 kcps.
  • conductive tin oxide is deposited on a substrate (step 400), such as glass, to form a front contact layer 132.
  • the conductive material preferably Ag
  • the conductive material in Metech 3221M is deposited on the CTO layer 132 (step 402).
  • the conductive material in Metech 3221M is dispensed by a dispensing system manufactured by Electronic Fusion Devices having a 725D valve and positioned by an Asymtek 402B position system.
  • the deposition of the conductive material being accomplished preferably under the following conditions: Deposition Rates: Acceleration - 50"/sec/sec Velocity - 7.0"/sec Snap-off Setpoint - .008" Film Thickness - .0005" - .0100" Film Length - As required
  • step 404 Following the deposition of the conductive material it is thermally cured (step 404). This is preferably performed in a multi-chamber system at a rate of 12"/min belt speed (continuous belt) for a dry time of 1 minute at 200°C then a fire time of 5 minutes at 550°C.
  • the front contact layer 132 is laser scribed to form scribe lines 124 (step 406). This is performed in the manner described above. Following laser scribing of scribe lines 124, the remaining steps in the fabrication of the photovoltaic module is shown in Figs. 2(c) to 2(g) as described herein are performed as described below.
  • Fig. 8 shows an apparatus useful in carrying out the process shown in flow chart form in Fig. 7 and described in reference thereto.
  • a substrate 114 having a layer 132 disposed thereon (as shown in Fig. 2(a), and described in reference thereto) is provided and placed on a conveyor belt 500.
  • a conductive liquid 502 is disposed in a reservoir 504 and provided, via a conduit 506 to a pump 508.
  • pump 508 is a positive displacement pump. Pump 508 increases the pressure of conductive liquid 502 and supplies it along a conduit 510 to a nozzle 512. Conductive liquid 502 is forced out of nozzle 512 and directed along a stream 514 towards substrate 114 having a conductive layer 132 on it.
  • the nozzle 512 is positioned via an X-Y-Z positioner 513 and a mechanical link 515. The position of nozzle 512 is thereby changed to form a pattern 516 on conductive layer 132.
  • Pattern 516 can be, for example, in the form of conductive strips 306, solder pad 308, and first bus bars 310 of Figs. 4 and 6.
  • Conveyor belt 500 is then energized to move substrate 114, having conductive layer 132 and pattern 516 thereon, into first oven 518.
  • conductive liquid 502 is Metech 3211M, as described above
  • pattern 516 is dried at 200°C for one minute in first oven 518.
  • Conveyor belt 500 is then energized again to move substrate 114 into second oven 519 whereupon it is fired at 550°C for approximately five minutes.
  • a photovoltaic region comprised of a substantially continuous thin film 134 of semiconductor material then is fabricated over front electrodes 118 and in first grooves 24, as shown in Fig. 2(c).
  • the semiconductor material filling first grooves 124 provides electrical insulation between adjacent front electrodes 118.
  • the photovoltaic region is made of hydrogenated amorphous silicon in a conventional PIN structure (not shown) and is approximately 6000 ⁇ in thickness, being comprised of a p-layer of 100 ⁇ , an i-layer of 5200-5500 ⁇ , and an n-layer of 500 ⁇ .
  • Deposition preferably is by glow discharge in silane, as described, for example, in U.S. Patent No. 4,064,521.
  • the semiconductor material may be CdS/CuInSe2 and CdTe.
  • the semiconductor film 134 then is scribed with a laser to ablate the semiconductor material along a second predetermined pattern of lines and form second grooves 126, which divide semiconductor film 134 into a plurality of photovoltaic elements 120, as shown in Fig. 2(d). Front electrodes 118 are exposed at the bottoms of second grooves 126. Scribing may be performed with the same laser used to scribe transparent conductive oxide layer 132, except that power density is reduced to a level that will ablate the semiconductor material without affecting the conductive oxide of front electrodes 118. Consequently, the laser scribing of semiconductor film 134 also can be performed from either side of substrate 114. Second grooves 126 preferably are scribed adjacent and parallel to first grooves 124 and preferably are approximately 100 micrometers in width.
  • a thin film 136 of conductive material such as metal, preferably aluminum, or a transparent conductor such as tin oxide, then is fabricated over photovoltaic elements 120 and in second grooves 126, as shown in Fig. 2(e).
  • the conductive material filling second grooves 126 provides electrical connections between film 136 and the portions of front electrodes 118 exposed at the bottoms of second grooves 126.
  • Conductive film 136 is formed, for example, by sputtering or other well known techniques, the thickness of film 136 depending on the intended application of the module. As an example, for modules intended to generate sufficient power to charge 12-volt storage battery, metal film 136 typically is formed of aluminum and is about 7000 ⁇ thick.
  • the next step would be to scribe metal film 136 with a laser to ablate the metal along a pattern of lines and form a series of grooves dividing film 136 into a plurality of back electrodes.
  • This method as taught, for example, by U.S. Patent No. 4,292,092, has proved to be impractical. Because of the high reflectivity of aluminum and other metals conventionally used to form the back electrodes, the laser used to scribe the back electrode film must be operated at a significantly higher power density than those used to scribe second grooves 126 in semiconductor film 134, often 10 to 20 times higher.
  • metal film 136 is formed of aluminum and is about 7000 ⁇ thick
  • the aluminum is to be directly ablated by a frequency-doubled neodymium:YAG laser emitting light having a wavelength of about 0.53 micrometers and operated in a TEM00 (spherical) mode
  • the laser typically would be focused to about 25 micrometers and operated at about 300 mW.
  • the same laser is used to ablate semiconductor film 134 and form second grooves 126, it preferably is defocused to 100 micrometers and is operated at about 360 mW.
  • the number of photons per second per unit area that is, the power density of the laser
  • the number of photons per second per unit area is a function of the spot size of the laser beam.
  • power density varies inversely with the square of the radius of the spot.
  • the laser power density required for direct ablation of the aluminum film is about 13 times the power density required to ablate the amorphous silicon film.
  • the photovoltaic cell becomes shorted due to molten metal flowing into the scribed groove and electrically connecting adjacent back electrodes, or due to molten metal diffusing into the underlying semiconductor material and producing a short across a photovoltaic element.
  • the underlying semiconductor material is comprised of amorphous silicon
  • dopants from the n-layer or p-layer often diffuse into the recrystallized amorphous silicon of the i-layer.
  • the photovoltaic regions 120 underlying metal film 136 are scribed with a laser operated at a power density sufficient to ablate the semiconductor material along a predetermined pattern of third lines parallel to and adjacent second grooves 126 but insufficient to ablate the conductive oxide of front electrodes 118 or the metal of film 136. More specifically, the laser must be operated at a power level that will ablate the semiconductor material and produce gases that structurally weaken and burst through the portions of the metal film positioned along the third lines to form substantially continuous gaps in the metal film along the third lines and separate the metal film into a plurality of back electrodes. As shown in Fig. 2(e), where the laser beams are shown schematically and designated by reference numerals 138, laser patterning of metal film 136 by ablation of the underlying semiconductor material is performed through substrate 114.
  • the method of this invention for patterning a metal film fabricated on a thin film of semiconductor material can be applied to thin film semiconductor devices having structures different from the specific embodiment shown in the drawings and discussed herein. As will be apparent to those of ordinary skill in the art, however, the method of this invention should not be applied to structures having films or layers of material disposed on the laser-incident side of the semiconductor film if such intervening films or layers will interfere with the propagation of the laser beam to the semiconductor film or if such intervening films or layers will inappropriately react with the laser in a manner that would, for example, damage the resulting semiconductor device.
  • ablating the semiconductor material of photovoltaic regions 120 along the pattern of third lines forms third grooves 128 in the semiconductor material, as seen in Fig. 2(f).
  • Third grooves 128 preferably are about 100 micrometers wide and are spaced apart from second grooves 126 by inactive portions 130 of semiconductor material.
  • the ablation of the semiconductor material formerly in third grooves 128 produces gases, for example, silicon gas from the ablation of amorphous silicon, which structurally weaken and burst through the portions of metal film 136 overlying the ablated semiconductor material to form gaps 129 that separate film 136 into a plurality of back electrodes 122.
  • Gaps 129 preferably are substantially continuous as viewed along a line orthogonal to the plane of Fig. 2(f).
  • the laser parameters required to produce continous gaps 129 in metal film 136 will, of course, depend on a number of factors, such as the thickness and material of the metal film, the characteristic wavelength of the laser, the power density of the laser, the pulse rate of the laser, and the scribing feed rate.
  • the overlying metal film is not melted by the relatively low-powered laser used to ablate the semiconductor material in third grooves 128, shorts are not created by molten metal flowing into third grooves 128 or diffusing into the underlying photovoltaic regions. Furthermore, the ablated semiconductor material is thermally cooled by the overlying metal and by the sudden expansion of the vapors produced during ablation. This local cooling helps prevent recrystallization of amorphous silicon and the melting of the overlying metal film by the hot semiconductor vapors.

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EP19900117189 1989-09-08 1990-09-06 Monolithic module comprising series and parallel connected photovoltaic cells Ceased EP0427934A3 (en)

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US40526589A 1989-09-08 1989-09-08
US405265 1995-03-14

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US5593901A (en) 1997-01-14
KR940006714B1 (ko) 1994-07-25
JP3129728B2 (ja) 2001-01-31
CN1023433C (zh) 1994-01-05
KR910007170A (ko) 1991-04-30
EP0427934A3 (en) 1991-09-18

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