EP0137954A1 - Photomultiplicateur de canal - Google Patents

Photomultiplicateur de canal Download PDF

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Publication number
EP0137954A1
EP0137954A1 EP84109664A EP84109664A EP0137954A1 EP 0137954 A1 EP0137954 A1 EP 0137954A1 EP 84109664 A EP84109664 A EP 84109664A EP 84109664 A EP84109664 A EP 84109664A EP 0137954 A1 EP0137954 A1 EP 0137954A1
Authority
EP
European Patent Office
Prior art keywords
channel
multiplier
funnel
carrier body
secondary electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84109664A
Other languages
German (de)
English (en)
Other versions
EP0137954B1 (fr
Inventor
Hans Lauche
Wilhelm Barke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of EP0137954A1 publication Critical patent/EP0137954A1/fr
Application granted granted Critical
Publication of EP0137954B1 publication Critical patent/EP0137954B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Definitions

  • the present invention relates to a channel secondary electron multiplier with a carrier body which contains an elongate, tubular multiplier channel, which has a main part and an adjoining, funnel-like widening initial section, and with a coating, which on the inner wall of the multiplier channel, including the initial section is arranged and the surface of which forms a secondary emission-resistant resistance layer.
  • Channel secondary electron multipliers (hereinafter "channel multipliers" for short) are known, for example, from US-A-4305744, DE-B-1964665, DE-A-1902293 and GB-A-1440037 and the Valvo data sheet X914AL, X914BL and have been known for a long time used for electron current amplification in detectors for electrons, ions and photons.
  • the one in the trade Available channel multipliers of the type of interest here which contain a single elongated, generally curved multiplier channel (in contrast to the so-called “channel plates", which contain a plurality of closely adjacent, short and mostly straight multiplier channels) generally consist of a curved tube made of lead glass.
  • tube-formed multiplier channel can be widened like a funnel to enlarge the capture cross-section for the particles to be detected.
  • the surface of the multiplier channel formed by the glass tube consists of an electrically conductive layer with a high secondary emission coefficient, which was generally formed by reducing the lead glass.
  • the known channel multipliers consisting of a glass tube are mechanically very sensitive, as a result of which their dimensions are limited to relatively small values.
  • This disadvantage is avoided in the channel multiplier, which is known from the above-mentioned US Pat. No. 4,305,744, by using a mechanically resistant ceramic carrier body which forms the multiplier channel.
  • the inner wall of the channel is coated with a material which is capable of secondary emissions and which is different from the material of the carrier body and which is not formed from the latter by reduction or any other chemical reaction.
  • the coating can e.g. consist of lead glass, which is reduced on the surface.
  • the coating and the ceramic of the carrier body should have essentially the same coefficient of thermal expansion, with differences of up to 8% being regarded as permissible.
  • the present invention is accordingly based on the object of developing a channel multiplier of the type mentioned in such a way that stable working is ensured and that it can also be produced in larger dimensions without unduly impairing the electrical properties.
  • the present invention is based on the knowledge that the electrical defects which occur when the dimensions of channel multipliers of the type mentioned above increase, are essentially due to two causes: firstly, fine cracks form in the active, secondary-emission-capable layer, which result in electrical discontinuities and thus affect the work of the multiplier. Secondly, as the dimensions of the funnel increase, the field distribution in the funnel-shaped initial section of the channel becomes increasingly poor with regard to the collection of the primary electrons hitting or generated there.
  • These deficiencies can be remedied on the one hand by making the coefficient of expansion of the carrier material significantly larger, in particular at least 10%, preferably 15%, most suitably at least 20 to 25% larger than the coefficient of expansion of the coating which provides the layer capable of secondary emissions and making this e.g. forms from a glaze coating at a temperature which is substantially above the maximum temperatures to be expected during operation, so that the coating is kept under a considerable compressive stress under all operating conditions. The occurrence of cracks and discontinuities is largely prevented by this compressive stress.
  • the channel multiplier 10 shown in FIG. 1 has a single elongate, tubular, curved channel, which is formed by a carrier body 12 made of metal, in particular stainless steel.
  • the carrier body 12 has a helical main part 12a which merges into a conically widening initial section or funnel 12b at the front and into a straight piece 12c at the rear.
  • the funnel 12b forms an inlet opening 12d, in which it is connected in a vacuum-tight manner to a fastening flange 14.
  • a metallic end piece 20, which is closed at one end, is melted in a vacuum-tight manner with its open end via a ceramic intermediate piece 18, insulated from the straight channel end 12c.
  • the inner surface of the metallic carrier body 12 including the funnel 12b delimiting the channel is essentially completely covered with a coherent layer 22 (FIG. 1a) made of a lead glass glaze.
  • the free surface of the glaze layer 22 is reduced in a conventional manner to form a resistance layer 22a with a high secondary emission coefficient.
  • the thin semiconducting secondary emission-capable layer 22a forms with the metal wall of the body 12 an electrical capacitor, the dielectric of which consists of the unreduced lead glass layer 22b. This capacitor can be used as an energy store for the electron avalanche current at the end of the multiplier channel. As a result, more secondary electrons can be released with each pulse than is possible with a conventional channel multiplier.
  • the flange 14 can serve as one connection to the semiconducting multiplier layer, while the other connection is formed by the end piece 20, which serves both as an anode and as a collector and in operation at a voltage of approx. +3.0 kV can be maintained with respect to the flange 14 lying on ground.
  • the inlet opening of the funnel 12b can easily have a diameter of more than 20 mm, e.g. Have 25 mm.
  • An advantage of the metal construction described with reference to FIG. 1 is the relatively good thermal conductivity of the carrier body, which also contributes to stability under high loads.
  • a creamy slurry of finely ground glass powder in a liquid carrier material in particular isopropyl alcohol, is preferably used.
  • This paste is applied by pouring, brushing or spraying. In this way, the entire layer can be distributed on the desired surface at room temperature and checked visually before baking.
  • the carrier is then slowly heated until the glaze flows smoothly, for example to about 800 ° C., and then cooled again. So far, the glaze layer has been produced by pouring and pressing through a liquid glass mass, which must have a much lower toughness and thus a much higher temperature (approx. 1000 ° C) than is necessary for the glass layer to run, which is the case with the known methods '' limits the number of carrier materials that can be used, requires much more effort and is hardly applicable, especially for large funnels.
  • the glaze material Before melting, the glaze material is preferably degassed. Burning in should therefore be carried out in a vacuum oven followed by smooth burning in an oxidizing atmosphere.
  • the lead glass glaze layer is then reduced in the usual way, e.g. by heating at 370 to 400 ° C for about six hours in hydrogen from 100 to 200 kPa to produce a uniform emission layer of about 10 nm in thickness.
  • the channel resistance can thus be calculated and optimized as a function of the channel cross section and the length.
  • the effectiveness of the individual surface areas depends on Funnel surface depends on the extent to which the electrons knocked out of the layer are also sucked into the beginning of the main part 12a of the channel. Since the widening of the cross section of the funnel 12b causes a reduction in the resistance in the axial direction and thus a reduction in the field strength, the funnel is basically only fully effective on the inside at the transition to the channel 12a. The sensitivity drops quickly towards the front (entry-side) edge and you soon reach a point where increasing the funnel diameter is no longer profitable.
  • the resistance and emission layer in the funnel is divided into a spiral-shaped strip by a narrow spiral separation, ie a non-conductive gap.
  • the width of the strip is preferably at least approximately equal to the inner circumference of the channel 12a. By varying the width of the strip, it is in your hand to create a guide field towards the center of the funnel and thus collect all the electrons from all parts of the funnel.
  • the width of the separation 234 created, for example, by scoring should be small compared to the width of the spiral strip 26.
  • the separation 24 can also be created by appropriate shaping of the carrier body 12. 1, the inner surface of the support can be coated with an enamel before glazing in order to achieve a high dielectric strength with a large capacity. The melting point of this enamel intermediate layer must of course be between that of the support and that of the glaze and can replace the unreduced layer 22b.
  • the embodiment of the present channel multiplier shown in FIGS. 2 and 3 contains a carrier body 112 made of insulating ceramic.
  • the carrier body 112 has a substantially cylindrical outer wall and forms a multiplier channel with a funnel-shaped starting section ("funnel") 115 and a spiral-shaped channel part 117 (see also FIG. 3), the axial center line of which lies essentially in one plane.
  • the channel part 117 is by a spiral-shaped recess, for example increasing depth and essentially constant width, for example approximately 2 mm, is formed in the rear flat end face of the essentially cylindrical carrier body 112. In order to achieve a desired field strength distribution in the canal, the depth and width of the canal can be varied.
  • the channel part 117 of the multiplier channel is closed by a ceramic plate 119.
  • the curvature of the multiplier channel is as uniform as possible and in order to achieve this during the transition from the funnel 115 into the channel part 117, the plate 119 can contain a corresponding recess 121 which forms part of the channel wall and thereby enables a transition with a uniform curvature from the funnel to the spiral .
  • the first piece of the channel part 117 adjoining the funnel is preferably somewhat narrower than the rest of the channel part 117.
  • the funnel 115 and the spiral channel part 117 are provided with a glaze which forms the secondary emissive layer and can also be produced as was explained above with reference to FIG. 1.
  • the secondary emission layer ends at an anode connection A, which e.g. can consist of a metallization.
  • anode connection A which e.g. can consist of a metallization.
  • a catcher 120 At the end of the spiral-shaped recess forming the channel part 117 there is a catcher 120, which can likewise consist of a metallization and is separated from the anode A by an uncoated, insulating piece 121 of the spiral-shaped channel part.
  • the metallization layers forming the anode A and the collector 120 are led outwards and with suitable connections, e.g. 123, connected.
  • the actual channel multiplier is welded in a vacuum-tight manner into the flange 129 by a cup-shaped intermediate piece 125 made of metal, which is glass-bonded or soldered onto the carrier body 112 and the end plate 119.
  • a housing 127 above it carries the electrical connections for a high-voltage input 131 and for a pulse output 133. Electrical components, for example an amplifier for the output signal, can be accommodated in the interior of the housing.
  • the vacuum-tight design according to FIG. 2 allows operation under vacuum conditions, while at the same time the connections 123 and 133 and the anode and high-voltage input 131 are freely accessible.
  • the emission layer in the funnel 115 is advantageously divided into a spiral-shaped strip 126 by a spiral-shaped narrow interruption 124, as was explained with reference to FIG. 1.
  • the width B of the strip is preferably approximately equal to 2 d, where d is the width of the main part of the multiplier channel (FIG. 3).
  • a voltage of +2400 to +3700 V can be present at the anode A with respect to a connection 135 at the inlet of the funnel 115, which is preferably at ground potential and e.g. is electrically connected to the flange 129 via the intermediate piece 125.
  • the collector 120 should have a voltage of approx. +10 V ./. Have +150 V against the anode.
  • the path resistance of the multiplier channel should generally be less than or equal to 10 8 ohms.
  • the channel multiplier according to FIG. 2 can be modified by first metallizing the surface of the ceramic carrier body 112 forming the channel and then coating it with the glaze, so that a capacitor is also available, as in the case of the channel multiplier with a metallic carrier body Fig. 1.
  • the helical or spiral strip from which the secondary emissive layer consists in the funnel-shaped initial section is expediently essentially coaxial with the funnel axis.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Electron Tubes For Measurement (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
EP84109664A 1983-08-18 1984-08-14 Photomultiplicateur de canal Expired EP0137954B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833329885 DE3329885A1 (de) 1983-08-18 1983-08-18 Kanal-sekundaerelektronenvervielfacher
DE3329885 1983-08-18

Publications (2)

Publication Number Publication Date
EP0137954A1 true EP0137954A1 (fr) 1985-04-24
EP0137954B1 EP0137954B1 (fr) 1988-07-20

Family

ID=6206888

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84109664A Expired EP0137954B1 (fr) 1983-08-18 1984-08-14 Photomultiplicateur de canal

Country Status (4)

Country Link
US (1) US4652788A (fr)
EP (1) EP0137954B1 (fr)
JP (1) JPS6084752A (fr)
DE (2) DE3329885A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148461A (en) * 1988-01-06 1992-09-15 Jupiter Toy Co. Circuits responsive to and controlling charged particles
DE3817897A1 (de) * 1988-01-06 1989-07-20 Jupiter Toy Co Die erzeugung und handhabung von ladungsgebilden hoher ladungsdichte
JPH0251840A (ja) * 1988-08-11 1990-02-21 Murata Mfg Co Ltd ２次電子増倍装置
US5030878A (en) * 1989-03-06 1991-07-09 Detector Technology, Inc. Electron multiplier with replaceable rear section
FR2676862B1 (fr) * 1991-05-21 1997-01-03 Commissariat Energie Atomique Structure multiplicatrice d'electrons en ceramique notamment pour photomultiplicateur et son procede de fabrication.
GB2480451A (en) * 2010-05-18 2011-11-23 E2V Tech Electron tube rf output window
US8905706B2 (en) 2010-06-17 2014-12-09 Chris Bills Vortex propeller

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2062301A1 (de) * 1969-12-18 1971-06-24 Bendix Corp Sekundarelektronen Vervielfacheran Ordnung
GB1374630A (en) * 1971-12-28 1974-11-20 Philips Electronic Associated Method of covering a surface with a vitreous layer
GB1440037A (en) * 1974-04-11 1976-06-23 Mullard Ltd Electron multipliers
DE2613116A1 (de) * 1975-04-12 1976-10-21 Emi Ltd Elektronen-vervielfacher
US4305744A (en) * 1978-10-24 1981-12-15 Universite Laval, Cite Universitaire Method of making an electron multiplier device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1113273B (de) * 1959-07-30 1961-08-31 Telefunken Patent Kathodenstrahlroehre mit elektrostatischer Ablenkung und Nachbeschleunigung des Elektronenstrahls
US3341730A (en) * 1960-04-20 1967-09-12 Bendix Corp Electron multiplier with multiplying path wall means having a reduced reducible metal compound constituent
DE1464573A1 (de) * 1962-11-19 1968-11-21 Egyesuelt Izzolampa Hochempfindliche Kathodenstrahlroehren mit Spiralnachbeschleunigung
US3407324A (en) * 1967-06-21 1968-10-22 Electro Mechanical Res Inc Electron multiplier comprising wafer having secondary-emissive channels
FR2000354A1 (fr) * 1968-01-18 1969-09-05 Matsushita Electric Ind Co Ltd
DE1964665B2 (de) * 1968-12-26 1971-06-24 Sekundaerelektronen vervielfacher
FR2158605A5 (fr) * 1971-10-25 1973-06-15 France Etat
DE2306644A1 (de) * 1973-02-10 1974-08-15 Leybold Heraeus Gmbh & Co Kg Sekundaerelektronenvervielfacher
JPS5025302A (fr) * 1973-07-06 1975-03-18
JPS5751224A (en) * 1980-09-11 1982-03-26 Kawasaki Steel Corp Controlling method for pallet speed of sintering machine
JPS59543A (ja) * 1982-06-25 1984-01-05 Nissan Motor Co Ltd 気筒数制御エンジン

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2062301A1 (de) * 1969-12-18 1971-06-24 Bendix Corp Sekundarelektronen Vervielfacheran Ordnung
GB1374630A (en) * 1971-12-28 1974-11-20 Philips Electronic Associated Method of covering a surface with a vitreous layer
GB1440037A (en) * 1974-04-11 1976-06-23 Mullard Ltd Electron multipliers
DE2613116A1 (de) * 1975-04-12 1976-10-21 Emi Ltd Elektronen-vervielfacher
US4305744A (en) * 1978-10-24 1981-12-15 Universite Laval, Cite Universitaire Method of making an electron multiplier device

Also Published As

Publication number Publication date
DE3472859D1 (en) 1988-08-25
JPS6084752A (ja) 1985-05-14
EP0137954B1 (fr) 1988-07-20
US4652788A (en) 1987-03-24
DE3329885A1 (de) 1985-03-07

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