EP0071512B1 - Procédé de préparation d'un additif pour bain de cuivrage électrolytique acide et son application - Google Patents
Procédé de préparation d'un additif pour bain de cuivrage électrolytique acide et son application Download PDFInfo
- Publication number
- EP0071512B1 EP0071512B1 EP82401328A EP82401328A EP0071512B1 EP 0071512 B1 EP0071512 B1 EP 0071512B1 EP 82401328 A EP82401328 A EP 82401328A EP 82401328 A EP82401328 A EP 82401328A EP 0071512 B1 EP0071512 B1 EP 0071512B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- additive
- concentration
- bath
- copper
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000654 additive Substances 0.000 title claims abstract description 36
- 230000000996 additive effect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 8
- 238000002360 preparation method Methods 0.000 title claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract description 25
- 229910052802 copper Inorganic materials 0.000 title abstract description 25
- 239000010949 copper Substances 0.000 title abstract description 25
- 239000002253 acid Substances 0.000 title abstract description 12
- 238000004070 electrodeposition Methods 0.000 title 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims 3
- 239000001117 sulphuric acid Substances 0.000 claims 3
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 claims 2
- KYARBIJYVGJZLB-UHFFFAOYSA-N 7-amino-4-hydroxy-2-naphthalenesulfonic acid Chemical compound OC1=CC(S(O)(=O)=O)=CC2=CC(N)=CC=C21 KYARBIJYVGJZLB-UHFFFAOYSA-N 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 13
- 238000009713 electroplating Methods 0.000 abstract 1
- 159000000000 sodium salts Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- -1 hydrocarbon radical Chemical class 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000003222 pyridines Chemical class 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 2
- VJOWMORERYNYON-UHFFFAOYSA-N 5-ethenyl-2-methylpyridine Chemical compound CC1=CC=C(C=C)C=N1 VJOWMORERYNYON-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- AEOCXXJPGCBFJA-UHFFFAOYSA-N ethionamide Chemical compound CCC1=CC(C(N)=S)=CC=N1 AEOCXXJPGCBFJA-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- YSSAGHQOEYPLQO-UHFFFAOYSA-N propyl n,n-diethylcarbamodithioate Chemical compound CCCSC(=S)N(CC)CC YSSAGHQOEYPLQO-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical group C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- SVNCRRZKBNSMIV-UHFFFAOYSA-N 3-Aminoquinoline Chemical compound C1=CC=CC2=CC(N)=CN=C21 SVNCRRZKBNSMIV-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000000981 basic dye Substances 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000003840 hydrochlorides Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Definitions
- the present invention relates to an additive for acid electrolytic copper plating bath, its preparation process and its application to copper plating of printed circuits.
- compositions of acidic copper plating baths are known for coating by electrolysis.
- French Patent No. 1,255,271 describes acid copper plating baths comprising one or more basic dyes which may in particular contain an ethenyl chromophore, amino compounds devoid of carbonyl groups, an organic sulfonic acid or a water-soluble salt of this acid and which contains, in its molecule at least one azido group, as additional brightening agent an organic compound which has at least one carbon atom linked exclusively to a heteroatom, and which carries a hydrocarbon radical, linked via a sulfur and / or nitrogen atom and one hydrogen of which is replaced by a sulfonic acid group, a thioamide or isothioamide which carries a sulfonic acid group linked to the nitrogen atom of the thioamide or isothioamide group via d 'a hydrocarbon radical, a thiourea derivative in which at least one nitrogen atom is replaced by an alkyl or anyle radical carrying an ether, hydroxyl or carboxyl group.
- N, N diethyldithiocarbamate of n propyl w sodium sulfonate has the formula:
- the violet crystal is constituted by a mixture of variable composition of the hydrochlorides of hexamethyl-, of pentamethyl-, of tetramethylpararosanilines.
- the proportions of the constituents in the additive can vary within wide limits, a concentration of between 0.5 and 10 g / l and preferably between 1 and 3 g / I for N, N sodium propyl sulfonate diethyldithiocarbamate is suitable ; a concentration of between 10 and 100 g / l and preferably 15 and 20 g / l for polyethylene glycol is suitable; a concentration between 0.1 and 1 g / I and preferably 0.2 and 0.5 g / I for the violet crystal is suitable and a concentration between 0.1 and 0.2 N for sulfuric acid is suitable.
- the components constituting the additive are mixed in the proportions which have been given above.
- the additive thus prepared can be used in the acidic copper-plating bath.
- concentration of the additive in the bath can vary between approximately 2 and 100 ml / l and preferably 3 and 50 ml / l.
- metallization is carried out at temperatures below 60 ° and with current densities varying from 0.5 to 10 A / dm 2 .
- the amperage zone giving the best gloss effects varies according to the proportions of the constituents of the additive.
- metallic supports all kinds of metals usually used for this purpose can be used, such as iron, copper, steel, zinc and other base metals or alloys.
- the acid copper baths in which the additives according to the invention can be used mainly comprise copper sulphate, the concentration of which can vary between 50 and 250 g / l and sulfuric acid, the concentration of which can vary between 60 and 250 g / I.
- the additive according to the invention has excellent chemical stability in acid baths, so that they remain able to function even if one operates at temperatures. relatively high bath.
- the additive of the invention can be used in copper plating operations.
- the additive according to the present invention is particularly effective for operating the electrolytic copper plating of printed circuits and electroformed parts.
- This additive can also be used in combination with other known agents, such as conductive salts, wetting agents or anti-porous agents.
- the additive according to the invention makes it possible to obtain copper deposits which are shiny, ductile, leveling and resistant to thermal shock. It also allows, because of its low degradability in the bath during operation, to lead to a significant increase in the duration of use of the bath. In addition, its excellent stability at temperatures above 25 ° C leads to an additive consumption at these temperatures three times lower than with the additives used until now. It also allows use in a very wide current density range as well as a concentration in the copper bath also very wide.
- the thickness of the copper deposits obtained with the additive can vary within wide limits; one can, for example, make deposits having a thickness of between a few microns and 5 mm.
- the mixture is stirred for approximately two hours, then the temperature is raised to 60 ° C in two hours; the mixture is matured at this temperature for 100 hours and then cooled to room temperature: about 187 liters of additive are thus obtained.
- the range of usable current density extends from 1 to 10 Aldm 2 if it is desired to obtain only a glossy deposit resistant to thermal shock, and from 1 to 8 A / dm 2 if in addition to these qualities, wishes to obtain a fine grain structure of copper.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT82401328T ATE13697T1 (de) | 1981-07-24 | 1982-07-16 | Verfahren zur herstellung eines zusatzmittels fuer ein saures kupferelektroplattierbad und seine verwendung. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8114394 | 1981-07-24 | ||
| FR8114394A FR2510145B1 (fr) | 1981-07-24 | 1981-07-24 | Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0071512A1 EP0071512A1 (fr) | 1983-02-09 |
| EP0071512B1 true EP0071512B1 (fr) | 1985-06-05 |
Family
ID=9260823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP82401328A Expired EP0071512B1 (fr) | 1981-07-24 | 1982-07-16 | Procédé de préparation d'un additif pour bain de cuivrage électrolytique acide et son application |
Country Status (9)
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4667049A (en) * | 1984-11-02 | 1987-05-19 | Etd Technology Inc. | Method of making dialkylamino-thioxomethyl-thioalkanesulfonic acid compounds |
| DE4032864A1 (de) * | 1990-10-13 | 1992-04-16 | Schering Ag | Saures bad zur galvanischen abscheidung von kupferueberzuegen und verfahren unter verwendung dieser kombination |
| DE4126502C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1991-08-07 | 1993-02-11 | Schering Ag Berlin Und Bergkamen, 1000 Berlin, De | |
| US6024857A (en) | 1997-10-08 | 2000-02-15 | Novellus Systems, Inc. | Electroplating additive for filling sub-micron features |
| DE19758121C2 (de) * | 1997-12-17 | 2000-04-06 | Atotech Deutschland Gmbh | Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten |
| EP1118696A4 (en) * | 1998-09-03 | 2007-10-17 | Ebara Corp | METHOD AND DEVICE FOR COATING SUBSTRATES |
| US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
| US6413388B1 (en) | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
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| US7427337B2 (en) * | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
| US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
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| US7204924B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
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| JP2001073182A (ja) * | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6612915B1 (en) | 1999-12-27 | 2003-09-02 | Nutool Inc. | Work piece carrier head for plating and polishing |
| US6354916B1 (en) | 2000-02-11 | 2002-03-12 | Nu Tool Inc. | Modified plating solution for plating and planarization and process utilizing same |
| US20060131177A1 (en) * | 2000-02-23 | 2006-06-22 | Jeffrey Bogart | Means to eliminate bubble entrapment during electrochemical processing of workpiece surface |
| US20090020437A1 (en) * | 2000-02-23 | 2009-01-22 | Basol Bulent M | Method and system for controlled material removal by electrochemical polishing |
| US7141146B2 (en) * | 2000-02-23 | 2006-11-28 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
| US6406609B1 (en) | 2000-02-25 | 2002-06-18 | Agere Systems Guardian Corp. | Method of fabricating an integrated circuit |
| US6482307B2 (en) | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
| US6852208B2 (en) | 2000-03-17 | 2005-02-08 | Nutool, Inc. | Method and apparatus for full surface electrotreating of a wafer |
| US20060118425A1 (en) * | 2000-04-19 | 2006-06-08 | Basol Bulent M | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate |
| AU2001247109A1 (en) * | 2000-04-27 | 2001-11-12 | Nutool, Inc. | Conductive structure for use in multi-level metallization and process |
| US6695962B2 (en) | 2001-05-01 | 2004-02-24 | Nutool Inc. | Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs |
| US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
| US6478936B1 (en) * | 2000-05-11 | 2002-11-12 | Nutool Inc. | Anode assembly for plating and planarizing a conductive layer |
| US7754061B2 (en) * | 2000-08-10 | 2010-07-13 | Novellus Systems, Inc. | Method for controlling conductor deposition on predetermined portions of a wafer |
| US6921551B2 (en) * | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
| US6776893B1 (en) | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| US6802946B2 (en) | 2000-12-21 | 2004-10-12 | Nutool Inc. | Apparatus for controlling thickness uniformity of electroplated and electroetched layers |
| US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
| US20050040049A1 (en) * | 2002-09-20 | 2005-02-24 | Rimma Volodarsky | Anode assembly for plating and planarizing a conductive layer |
| US20070131563A1 (en) * | 2003-04-14 | 2007-06-14 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
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| DE10337669B4 (de) * | 2003-08-08 | 2006-04-27 | Atotech Deutschland Gmbh | Wässrige, saure Lösung und Verfahren zum galvanischen Abscheiden von Kupferüberzügen sowie Verwendung der Lösung |
| US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
| US7824534B2 (en) * | 2005-01-25 | 2010-11-02 | Nippon Mining & Metals Co., Ltd. | Copper electrolytic solution containing as additive compound having specific skeleton, and electrolytic copper foil manufactured therewith |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
| EP1839695A1 (en) * | 2006-03-31 | 2007-10-03 | Debiotech S.A. | Medical liquid injection device |
| US8500985B2 (en) * | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
| US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
| KR101297159B1 (ko) | 2009-12-31 | 2013-08-21 | 제일모직주식회사 | 열가소성 수지 조성물 및 이를 이용한 성형품 |
| CN105568326A (zh) * | 2015-12-31 | 2016-05-11 | 深圳市鑫鸿顺科技有限公司 | 一种pcb垂直连续电镀专用镀铜溶液 |
| EP3877571A4 (en) | 2018-11-07 | 2022-08-17 | Coventya Inc. | SATIN COPPER BATH AND PROCESS FOR DEPOSITIONING A SATIN COPPER LAYER |
| CN110284163B (zh) * | 2019-07-31 | 2020-08-04 | 广州三孚新材料科技股份有限公司 | 一种太阳能电池用镀铜液及其制备方法 |
| WO2021200614A1 (ja) * | 2020-04-01 | 2021-10-07 | 住友電気工業株式会社 | フレキシブルプリント配線板及びその製造方法 |
| KR20240033129A (ko) * | 2021-10-26 | 2024-03-12 | 가부시끼가이샤 제이씨유 | 피도금물 중의 구리 결정립을 조대화하는 방법 및 구리 도금막 중의 구리 결정립을 조대화한 구리 도금막 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4036710A (en) * | 1974-11-21 | 1977-07-19 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4036711A (en) | 1975-12-18 | 1977-07-19 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4038161A (en) * | 1976-03-05 | 1977-07-26 | R. O. Hull & Company, Inc. | Acid copper plating and additive composition therefor |
-
1981
- 1981-07-24 FR FR8114394A patent/FR2510145B1/fr not_active Expired
-
1982
- 1982-07-16 AT AT82401328T patent/ATE13697T1/de not_active IP Right Cessation
- 1982-07-16 EP EP82401328A patent/EP0071512B1/fr not_active Expired
- 1982-07-16 US US06/398,805 patent/US4430173A/en not_active Expired - Fee Related
- 1982-07-16 DE DE8282401328T patent/DE3264038D1/de not_active Expired
- 1982-07-22 IE IE1754/82A patent/IE53352B1/en not_active IP Right Cessation
- 1982-07-22 JP JP57126848A patent/JPS5827992A/ja active Granted
-
1986
- 1986-07-24 SG SG640/86A patent/SG64086G/en unknown
- 1986-12-11 HK HK965/86A patent/HK96586A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE3264038D1 (en) | 1985-07-11 |
| JPS5827992A (ja) | 1983-02-18 |
| FR2510145B1 (fr) | 1986-02-07 |
| IE53352B1 (en) | 1988-10-26 |
| FR2510145A1 (fr) | 1983-01-28 |
| ATE13697T1 (de) | 1985-06-15 |
| US4430173A (en) | 1984-02-07 |
| IE821754L (en) | 1983-01-24 |
| EP0071512A1 (fr) | 1983-02-09 |
| HK96586A (en) | 1986-12-19 |
| JPS6155599B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-11-28 |
| SG64086G (en) | 1987-09-18 |
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