EP0019370B1 - Plasma reactor apparatus and process for the plasma etching of a workpiece in such a reactor apparatus - Google Patents

Plasma reactor apparatus and process for the plasma etching of a workpiece in such a reactor apparatus Download PDF

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Publication number
EP0019370B1
EP0019370B1 EP80301301A EP80301301A EP0019370B1 EP 0019370 B1 EP0019370 B1 EP 0019370B1 EP 80301301 A EP80301301 A EP 80301301A EP 80301301 A EP80301301 A EP 80301301A EP 0019370 B1 EP0019370 B1 EP 0019370B1
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EP
European Patent Office
Prior art keywords
reactor apparatus
plasma
electrode
electrodes
reaction volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP80301301A
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German (de)
English (en)
French (fr)
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EP0019370A1 (en
Inventor
Georges J. Dr. Gorin
Josef T. Hoog
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CollabRx Inc
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CollabRx Inc
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Filing date
Publication date
Application filed by CollabRx Inc filed Critical CollabRx Inc
Publication of EP0019370A1 publication Critical patent/EP0019370A1/en
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Publication of EP0019370B1 publication Critical patent/EP0019370B1/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • This invention relates to a plasma reactor apparatus and more specifically to a plasma reactor apparatus which provides improved uniformity of etching and improved overetch control.
  • Plasma processing is gaining rapid acceptance as a replacement for older conventional processing. This is especially true in the semiconductor industry but is becoming equally true in other manufacturing fields as well. Plasma etching is being used in place of wet chemical etching and plasma deposition is being used in place of high temperature thermal deposition. Plasma processing offers advantages in cost, environmental impact, and repeatability.
  • Existing plasma reactors can be roughly divided into two types: barrel type reactors and parallel plate type reactors.
  • barrel type reactor workpieces are loaded into a cylindrical reaction chamber and a reactant plasma is introduced into that chamber.
  • the plasma is created by a field from an electrode which surrounds the workpiece.
  • Gas flow is approximately axial along this type of reactor and may be improved by an injection manifold which injects gases more or less uniformly along the axis.
  • This type of reactor suffers from two types of non-uniformities. One of these non-uniformities results from the external electrode which cannot provide a uniform field with respect to workpieces within the chamber. The other results from the gas flow kinetics.
  • Parallel plate reactors provide a degree of improvement in uniformity over the barrel reactor by providing a more uniform and better defined field at the workpiece.
  • the parallel plate reactor still suffers from non-uniformities resulting from a non-uniform and usually radial reactant gas flow.
  • All of the aforementioned plasma reactors have an additional fault.
  • the total reactor including a considerable amount of unused volume, is filled with the reactive plasma although the workpieces occupy only a limited amount of that volume.
  • the total cylindrical chamber is filled with plasma.
  • the parallel plate reactor even the volume outside the plates is filled with plasma. Filling this "dead space" with plasma is uneconomical because of wasted reactants and especially because of the extra power required to maintain this unused plasma.
  • the power requirement is important because a given power supply must be large enough to generate both the used and unused plasma.
  • the energy of the used plasma is unnecessarily limited because the power supply must also generate the unused or wasted plasma. More importantly, as the pressure in the reaction chamber changes the plasma volume changes, expanding unpredictably into the dead space. This presents problems with reproducibility from run to run.
  • U.S. Specification No. 4 148 705 describes a process and apparatus for etching aluminium in the glow discharge of a gas plasma formed between a pair of closely spaced electrodes and a distributed impedance is provided in series with the plasma to ensure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.
  • a plasma reactor apparatus which comprises first and second electrodes configured to bound a reaction volume; said first electrode having integral therewith a gas distribution manifold defining a first array of orifices for the ingress of reactants uniformly to said reaction volume and a second array of orifices for the egress of reaction products from said reaction volume.
  • a plasma reactor apparatus which has first and second metal electrodes electrically separated by an insulator. These two electrodes are essentially parallel, but are shaped and positioned so that the two electrodes and the insulator bound a reaction volume. The first of the electrodes is movable with respect to the second electrode to facilitate loading and unloading workpieces into the reaction volume.
  • a gas distribution manifold is integral with the second, larger electrode and provides for the uniform distribution of reactants into the reaction volume through an array of orifices. The manifold further provides for the uniform exhausting of reactant products through a second array of orifices. The distribution of reactants is thus uniform, the fields between the plates are uniform, and the field and plasma are confined to the limited volume between the two electrodes.
  • FIG. 1 shows a plasma reactor apparatus 10 in accordance with one embodiment of the invention.
  • the apparatus includes a first electrode 12 and a second electrode 14.
  • Second electrode 14 is movable in a vertical direction between the open position as shown and a closed position. When moved vertically upward to its closed position, second electrode 14 contacts an insulator 16 which provides electrical isolation between the first and second electrodes. In the closed position the two electrodes and the insulator bound a small, confined reaction volume as indicated by the numeral 18.
  • 0-ring seals 20 serve to complete the seal between the electrodes and the insulator.
  • a gas distribution manifold 22 allows a uniform injection of reactant gases into the reaction volume and also allows for the uniform extraction of reaction products from that volume.
  • the manifold 22 which will be described in more detail below, consists of a first cavity 24 and a second cavity 26.
  • the first cavity receives reactants from a gas inlet 28. Gases which enter the cavity 24 then are uniformly injected into the reaction volume through a first set of orifices 30 in the lower plate 32 of the manifold. Reaction products, that is, spent and unused reactants as well as the chemical products resulting from the plasma reaction, are exhausted to the second cavity 26 through a second set of orifices 34 in the lower plate 32. These reaction products are then exhausted from the second cavity by a vacuum pump (not shown) through an outlet 36.
  • the electrodes can be cast of aluminium or other metal. In this embodiment the reaction volume is about 15 cm in diameter and has a height of about 3 cm.
  • the second electrode 14 is provided with a recess 54 for centering a workpiece.
  • the second electrode can further be provided with temperature control means (not shown) for either heating or cooling the workpiece.
  • a radio frequency (rf) generator is provided which contacts the two electrodes and establishes an rf field between them.
  • the manifold 22 is electrically common with the first electrode 12. Because the manifold and the second electrode are substantially parallel, the field established between them is fairly uniform. The field and the resulting plasma are confined to the region between the electrodes; there is no wasted "dead space".
  • a detector 29 is used to monitor the end point of the plasma reaction.
  • the gas manifold 22 with its two cavities 24, 26 is made up of three components. These are the lower plate 32, an intermediate piece 38 and a top cover 35. The details of the construction of the manifold are shown more clearly in Figures 2 to 4. Figures 2 and 3 show bottom and side views, respectively, of the intermediate piece 38.
  • Piece 38 which can be machined from a single piece, cast, or built up from components, is essentially a flat plate 40 from which a series of posts 42 project. The posts 42 are arranged in a regular array. A hole 44 extends through each of the posts. Holes 44 mate with the orifices 34 in the lower plate 32 and provide a conduit for the passage of reaction products from the reaction volume 18 to second cavity 26 bounded by the intermediate piece and top cover 35.
  • reaction gases enter through inlet 28, fill cavity 24, and then are injected into the reaction volume through the orifices 30 in lower plate 32.
  • Orifices 30 are a regular array of holes through the lower plate 32 and provide for the uniform injection of reactant gases into the reaction volume.
  • a semiconductor wafer 46 a portion of which is shown in cross-section in Figure 5. Overlying the semiconductor wafer is first a layer of silicon dioxide 48 and then a layer of polycrystalline silicon 50. During the processing of the semiconductor wafer it is desirous to etch through and pattern polycrystalline layer 50. This is done photolithographically by applying and patterning a layer of photoresist material 52. The pattern in the photoresist layer 52 is that pattern which it is desired to replicate in the underlying layer of polycrystalline silicon.
  • reaction volume 18 is evacuated through exhaust 36 using a vacuum pump.
  • Reactant gases such as a mixture including nitrogen, oxygen and carbon tetrafluoride are brought into the reactor through inlet 28 and cavity 24. These reactants are uniformly injected into the reaction volume through orifices 30 so that wafer 46 is subjected to a uniform flow of reactant.
  • the pressure within the reaction volume is maintained at about 200 Pa (about 1.5 Torr) by balancing the reactant input and the evacuation through outlet 36.
  • Wafer temperature is maintained at about 60°C by means of the heater in the second electrode 14.
  • RF power Seventy-five watts of RF power are applied to the first electrode 12 and the second electrode is maintained at RF ground potential.
  • the RF power creates a plasma of the reactant gases and this plasma chemically etches the polycrystalline silicon 50 which is exposed through the opening in the patterned photoresist layer 52.
  • the reaction products are removed from the reaction volume 18 through the array of orifices 34.
  • the reaction products pass through these orifices to cavity 26 from which they are swept out through exhaust 36 by the vacuum pump.
  • a layer of polycrystalline silicon about 500 nanometers in thickness is patterned in approximately 2 minutes 15 seconds.
  • Figure 6 shows the relationship between the patterned photoresist layer and the resulting etched polycrystalline silicon layer at the end of the process.
  • the masking layer of photoresist tends to be undercut; that is, the resulting patterned polycrystalline silicon is narrower than the original photoresist mask.
  • the width of the original photoresist mask is defined as A and the resulting width of the polycrystalline silicon is defined as B
  • the amount of undercutting D can be defined as A-B.
  • overetch Some amount of overetch is usually allowed to insure that the layers etch completely through, making allowane-s for variations in film thickness across the wafer and from workpiece to workpiece. Some overetch time can also be used to achieve desired, narrow line widths.
  • the photographic mask used to expose the photoresist layer can be controlled to give line widths within about 10% of the desired width, with the usual tendency to be oversized. Normal photoresist processing and exposure further tends to oversize the photoresist mask. These two tendencies thus result in the necessity for some overetch to get the desired line width. If any overetch time is employed, however, it is desirable that there be a minimum spread in the amount of undercutting D with overetch time.
  • Figure 7 shows the resultant undercutting as a function of overetch time for conventional processing and for processing in accordance with the invention.
  • Each process leads to a linear relationship between undercutting and overetch time as indicated by the straight line.
  • the spread increases rapidly with etch time in conventional processing, but the spread in D remains approximately constant and thus predictable with the process performed in the apparatus of the instant invention.
  • the spread in D of the two different processes is indicated by the error bars shown in the graph of Figure 7. Minimizing the spread in D makes the process more predictable and reproducible.
  • manifold 22 provides for uniform distribution of reactants across the area of the workpiece. This is accomplished by the uniform injection of reactants and by the uniform exhausting of reactant products.
  • the closely spaced, substantially parallel electrodes provide for a uniform RF field within the reaction volume.
  • the ratio of the areas of the two electrodes gives further added advantages.
  • the apparatus is constructed to have the first electrode including the manifold larger than the second electrode. It is desirable that the ratio of electrode areas be greater than about 1.2; this results in a positive ion bombardment which appears to enhance the chemical etching.
  • the workpiece sits on the small electrode (cathode) in an RF diode system and receives the enhanced positive ion bombardment which is essential to certain high resolution etching. At these power levels and pressures no appreciable amount of either sputter etching or ion milling occurs, but the ion bombardment seems to catalyze the chemical etching.
  • the area ratio provides an effective DC bias because of the mobility difference between electrons and positive ions within the plasma.
  • An external DC bias cannot accomplish the same result because the workpiece is often insulated, for example, by an oxide layer, and thus is isolated from the second electrode.
  • the area ratio further results in a high current density on the second electrode which provides for a thick plasma sheath.
  • the thick sheath and the effective DC bias give a directed ion bombardment on the wafer. Because the ion bombardment is directed, it impinges only on those portions of the layer to be etched which are exposed by openings in the photoresist mask. Thus the enhanced chemical etching resulting from this bombardment occurs only in the exposed areas and undercut etching is minimized.
  • the apparatus shown above is most suitable for the etching of a single workpiece.
  • the apparatus can be automated as indicated schematically in Figure 8.
  • a cassette filled with wafers can be loaded into the input 56 of an automatic apparatus. Wafers are then conveyed one at a time to the reactor apparatus 10 on belts, air bearing tracks, or the like. As the wafer arrives at the reactor, the second electrode is lowered to the open position, the wafer is loaded on that second electrode, and the chamber is closed. Automatic controls provide for the timely opening and closing of the chamber, inputting of reactant gases, and turning on and off of the RF power.
  • the chamber again opens and the wafer is conveyed to another cassette in an output station 58.
  • the entire operation can be accomplished with little operator interaction. Because of the uniformity of the etching, the etch time can be established for a particular process step and all of the wafers in the batch can be etched identically.
  • the first electrode rather than the second electrode can be maintained at rf ground potential.
  • the reactor apparatus can also be used for the implementation of related processes such as reactive ion etching which is carried out at lower pressures than plasma etching and combines chemical energy from the gas and physical energy from the ions to accomplish the etching.
  • reactive ion etching which is carried out at lower pressures than plasma etching and combines chemical energy from the gas and physical energy from the ions to accomplish the etching.
  • the apparatus can be further employed for the deposition of thin uniform films. Accordingly, it is intended that the invention embrace all such alternatives, modifications and variations as fall within the spirit and scope of the following claims.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
EP80301301A 1979-05-18 1980-04-23 Plasma reactor apparatus and process for the plasma etching of a workpiece in such a reactor apparatus Expired EP0019370B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40604 1979-05-18
US06/040,604 US4209357A (en) 1979-05-18 1979-05-18 Plasma reactor apparatus

Publications (2)

Publication Number Publication Date
EP0019370A1 EP0019370A1 (en) 1980-11-26
EP0019370B1 true EP0019370B1 (en) 1983-09-07

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EP80301301A Expired EP0019370B1 (en) 1979-05-18 1980-04-23 Plasma reactor apparatus and process for the plasma etching of a workpiece in such a reactor apparatus

Country Status (4)

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US (1) US4209357A (enrdf_load_stackoverflow)
EP (1) EP0019370B1 (enrdf_load_stackoverflow)
JP (1) JPS55154585A (enrdf_load_stackoverflow)
DE (1) DE3064737D1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI478771B (zh) * 2007-10-16 2015-04-01 Applied Materials Inc 多氣體同心注入噴頭

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