DK2630670T3 - Termoelektrisk apparat og anvendelse heraf - Google Patents

Termoelektrisk apparat og anvendelse heraf Download PDF

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DK2630670T3
DK2630670T3 DK11776294.8T DK11776294T DK2630670T3 DK 2630670 T3 DK2630670 T3 DK 2630670T3 DK 11776294 T DK11776294 T DK 11776294T DK 2630670 T3 DK2630670 T3 DK 2630670T3
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thermoelectric apparatus
thermoelectric
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DK11776294.8T
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David L Carroll
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Univ Wake Forest
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/10PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/857Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/02Single-walled nanotubes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/06Multi-walled nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)

Claims (19)

1. Termoelektrisk apparat (200) omfattende: i det mindste et p-type lag (1,201), som er koblet til i det mindste et n-type lag (2, 202) til tilvejebringelse af en p-n-overgang (4), og et isoleringslag (3, 207), som delvis er anbragt imellem p-type laget og n-type laget, kendetegnet ved, at p-type laget omfatter et antal carbon na-nopartikler, som er anbragt i en polymerisk matrix, og n-type laget omfatter et antal n-doterede carbon nanopartikler, der er anbragt i en polymerisk matrix.
2. Termoelektrisk apparat (200) ifølge krav 1 omfattende et antal p-type lag (1, 201), som er koblet sammen med et antal n-type lag (2, 202), som tilvejebringer et antal p-n-overgange (4), og isoleringslag (3, 207), som er i det mindste delvis placeret imellem p-type lagene og n-type lagene.
3. Termoelektrisk apparat (200) ifølge krav 1, hvorved p-type lagets (1, 201) carbon nanopartikler omfatter enkeltvæggede carbon nanorør, flervæggede carbon nanorør, fullerener eller blandinger heraf.
4. Termoelektrisk apparat (200) ifølge krav 3, hvorved p-type lagets (1, 201) carbon nanopartikler omfatter bor.
5. Termoelektrisk apparat (200) ifølge krav 1, hvorved n-type lagets (2,202) n-doterede carbon nanopartikler omfatter enkeltvæggede carbon nanorør, flervæggede carbon nanorør, fullerener eller blandinger heraf.
6. Termoelektrisk apparat (200) ifølge krav 5, hvorved de n-doterede carbon nanopartikler omfatter nitrogen.
7. Termoelektrisk apparat (200) ifølge krav 1, hvorved p-type lagets (1, 201) polymeriske matrix omfatter en fluorpolymer.
8. Termoelektrisk apparat (200) ifølge krav 7, hvorved fluorpolymeren omfatter polyvinylfluorid, polyvinylidenfluorid, polytetrafluorethylen eller blandinger heraf.
9. Termoelektrisk apparat (200) ifølge krav 1, hvorved p-type lagets (1, 201) polymeriske matrix omfatter en polyacryl, polyolefin eller blandinger heraf.
10. Termoelektrisk apparat (200) ifølge krav 1, hvorved carbon nanopartiklerne er til stede i polymermatrixen i en mængde i intervallet fra 5 vægt% til 95 vægt%.
11. Termoelektrisk apparat (200) ifølge krav 7, hvorved p-type laget (1,201) har en Seebeck coefficient i intervallet fra 10 pV/K til 35 μ V/K ved en temperatur på 290°K.
12. Termoelektrisk apparat (200) ifølge krav 1, hvorved n-type lagets (2, 202) polymeriske matrix omfatter en fluorpolymer.
13. Termoelektrisk apparat (200) ifølge krav 12, hvorved fluorpolymeren omfatter polyvinylfluorid, polyvinylidenfluorid, polytetrafluorethylen eller blandinger heraf.
14. Termoelektrisk apparat (200) ifølge krav 1, hvorved n-type lagets (2, 202) polymeriske matrix omfatter polyacryl, polyolefin eller blandinger heraf.
15. Termoelektrisk apparat (200) ifølge krav 1, hvorved de n-doterede carbon nanopartikler er til stede i polymermatrixen i en mængde i intervallet fra 5 vægt% til 95 vægt%.
16. Termoelektrisk apparat (200) ifølge krav 1, hvorved n-type lagets (2, 202) polymeriske matrix tilvejebringer de n-doterede carbon nanopartikler n-doteringsstoffet.
17. Termoelektrisk apparat (200) ifølge krav 1, hvorved n-type laget (2, 202) har en Seebeck coefficient i intervallet fra ca. -10 pV/K til ca -35 μ V/K ved en temperatur på 290° K.
18. Termoelektrisk apparat (200) ifølge krav 1, hvorved isoleringslaget (3, 207) omfatter et elektrisk isolerende polymerisk materiale.
19. Termoelektrisk apparat (200) ifølge krav 2, og som har en ZT på mindst 0,5.
DK11776294.8T 2010-10-18 2011-10-18 Termoelektrisk apparat og anvendelse heraf DK2630670T3 (da)

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US39429310P 2010-10-18 2010-10-18
PCT/US2011/056740 WO2012054504A2 (en) 2010-10-18 2011-10-18 Thermoelectric apparatus and applications thereof

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US (2) US10868077B2 (da)
EP (2) EP3041057A3 (da)
JP (2) JP2013546175A (da)
KR (1) KR20140040067A (da)
CN (2) CN106848049A (da)
AU (1) AU2011317206B2 (da)
CA (1) CA2814993C (da)
DK (1) DK2630670T3 (da)
ES (1) ES2547089T3 (da)
IL (1) IL225787B (da)
WO (1) WO2012054504A2 (da)

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EP2630670A2 (en) 2013-08-28
CN103283049A (zh) 2013-09-04
US10868077B2 (en) 2020-12-15
CA2814993A1 (en) 2012-04-26
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EP3041057A2 (en) 2016-07-06
CN106848049A (zh) 2017-06-13
AU2011317206A1 (en) 2013-05-23
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US20130312806A1 (en) 2013-11-28
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US20210098528A1 (en) 2021-04-01
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