DE976691C - Verfahren zur Herstellung von Trockengleichrichtern - Google Patents

Verfahren zur Herstellung von Trockengleichrichtern

Info

Publication number
DE976691C
DE976691C DEJ3988A DEJ0003988A DE976691C DE 976691 C DE976691 C DE 976691C DE J3988 A DEJ3988 A DE J3988A DE J0003988 A DEJ0003988 A DE J0003988A DE 976691 C DE976691 C DE 976691C
Authority
DE
Germany
Prior art keywords
barrier layer
layer
counter electrode
semiconductor
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEJ3988A
Other languages
German (de)
English (en)
Inventor
Simon Ernest Mayer
Henley Frank Sterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of DE976691C publication Critical patent/DE976691C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Laminated Bodies (AREA)
  • Insulating Bodies (AREA)
DEJ3988A 1949-08-26 1951-04-01 Verfahren zur Herstellung von Trockengleichrichtern Expired DE976691C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22203/49A GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers

Publications (1)

Publication Number Publication Date
DE976691C true DE976691C (de) 1964-02-27

Family

ID=10175594

Family Applications (1)

Application Number Title Priority Date Filing Date
DEJ3988A Expired DE976691C (de) 1949-08-26 1951-04-01 Verfahren zur Herstellung von Trockengleichrichtern

Country Status (6)

Country Link
US (1) US2695380A (ja)
BE (1) BE497748A (ja)
CH (1) CH311957A (ja)
DE (1) DE976691C (ja)
FR (1) FR1023735A (ja)
GB (1) GB672732A (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2766509A (en) * 1952-05-22 1956-10-16 Gen Electric Titanium dioxide rectifier
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2820184A (en) * 1953-03-11 1958-01-14 Sylvania Electric Prod Titanate rectifiers
US2851405A (en) * 1953-07-03 1958-09-09 Sylvania Electric Prod Titanate rectifiers
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US2972570A (en) * 1955-04-07 1961-02-21 Eastman Kodak Co Thin film ceramic capacitor and method of making
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
US2922730A (en) * 1956-06-07 1960-01-26 Feldman Charles Method of forming thin films of barium titanate
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
FR1237912A (fr) * 1959-06-26 1960-08-05 Quartz & Silice Perfectionnements à la fabrication de diélectriques, notamment pour condensateurs électrolytiques
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication
US3262867A (en) * 1962-11-28 1966-07-26 Lockheed Aircraft Corp Method for making film capacitors
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors
US3507759A (en) * 1966-09-15 1970-04-21 American Cyanamid Co Removal of conductive metal oxide from a metal oxide coated insulating substrate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97133C (ja) * 1959-08-01 1900-01-01
DE667780C (de) * 1937-09-28 1938-11-19 John James Kirwan Verfahren zum Herstellen von Mundstueckbelag
US2162362A (en) * 1938-10-11 1939-06-13 Bell Telephone Labor Inc Asymmetrical conductor
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US879062A (en) * 1907-04-05 1908-02-11 Massachusetts Wireless Equipment Company Rectifier and detector.
US929582A (en) * 1908-09-10 1909-07-27 William P Mashinter Electric-current rectifier.
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE667780C (de) * 1937-09-28 1938-11-19 John James Kirwan Verfahren zum Herstellen von Mundstueckbelag
US2162362A (en) * 1938-10-11 1939-06-13 Bell Telephone Labor Inc Asymmetrical conductor
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
NL97133C (ja) * 1959-08-01 1900-01-01

Also Published As

Publication number Publication date
BE497748A (ja)
FR1023735A (fr) 1953-03-23
GB672732A (en) 1952-05-28
CH311957A (fr) 1955-12-15
US2695380A (en) 1954-11-23

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