US2695380A - Electric current rectifier - Google Patents

Electric current rectifier Download PDF

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Publication number
US2695380A
US2695380A US180100A US18010050A US2695380A US 2695380 A US2695380 A US 2695380A US 180100 A US180100 A US 180100A US 18010050 A US18010050 A US 18010050A US 2695380 A US2695380 A US 2695380A
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United States
Prior art keywords
layer
electric current
titanium dioxide
rectifier
semi
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Expired - Lifetime
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US180100A
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English (en)
Inventor
Mayer Simon Ernest
Sterling Henley Frank
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International Standard Electric Corp
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International Standard Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Definitions

  • This invention relates to electric current rectifiers, and more particularly to such rectifiers utillsing the semiconducting properties of a metal oxide and allied materials containing appreciable quantities of a metal oxide.
  • the materials to be used in rectifiers according to the present invention owe their semi-conducting properties to a deficiency of oxygen from the stoichiometric proportions, usually too minute to be detected by chemical analysis.
  • an electric current rectifier comprises a semi-conductor layer and a counterelectrode and a barrier layer therebetween in which the semi-conductor layer and the barrier layer comprise a metal oxide and in which the semi-conductor layer is deficient in oxygen in comparison with the barrier layer.
  • Another feature of the invention comprises the method of manufacture of an electric current rectifier which comprises reducing the oxygen content of a layer of metal oxide, restoring oxygen to a thin surface layer thereof and applying a counter-electrode to said thin surface layer.
  • a further feature of the invention comprises the method of manufacture of an electric current rectifier which comprises reducing the oxygen content of a layer of titanium dioxide and depositing thereon titanium dioxide by the decomposition of a compound containing titanium and oxygen and applying a counter-electrode to the deposited layer.
  • a semi-conductor layer 1 comprising metal oxide such as titanium dioxide, rendered deficient in oxygen in a manner to be later explained, has on one of its surfaces a relatively thin layer 2, comprising metal oxide such as titanium dioxide to which oxygen has been added to overcome any deficiency which might have existed therein.
  • the surface of the layer 2 remote from the layer 1 has thereon a counterelectrode layer 3 which may conveniently comprise a silver paste.
  • a pressed and sintered body of titanium dioxide is formed in the shape of a disc, by making up titanium dioxide in powder form into a paste with water to which has been added some gelatine or glue. The paste is then pressed into the disc form to a density of about 3.5. The disc is then dried, prefired in air to about 1050 C. for about 1 /2 hours. A final firing at about 1300" C. is given in hydrogen for 2,695,380 Patented Nov. 23, 1954 "ice about 1 hour. The disc is then allowed to cool in the furnace in a hydrogen atmosphere.
  • a base electrode is applied to one face of the disc e. g. by firing a silver paste.
  • the other face of the disc is then polished by known. methods and treated by means of an oxy-gas flame so that the surface attains a temperature of about 500 C.
  • a counterelectrode is then applied to the treated surface.
  • This counterelectrode may be pressed on lead foil, or a silver paste prepared according to specification No. 569.388 so that it can be fired at a lower temperature than 500 C., e. g. 300 C. is applied.
  • Better results than either of these have, however been obtained by the use of a connterelectrode of tellurium.
  • counterelectrode a typical rectifier of 0.5 cm. give the following characteristics Forward resistance 77 ohms Reverse resistance 90,000 ohms Turnover voltage 20 volts.
  • the eifective area of the rectifier was of the order of l cm. and a rectifier of this character is eminently suitable for power work.
  • the surface treatment of the semi-conductor can be given either before or after the application of the base electrode.
  • the surface treatment may, however, be produced by other means.
  • the surface may be treated by application of a chemical oxidising agent, or may be oxidised electrolytically e. g. ,by anodic treatment in sulphuric or oxalic acid.
  • an electrolytic treatment it is clearly an advantage that this should be carried out after application of the base electrode.
  • the surface treatment may also consist in the deposition upon the surface of a thin socalled barrier layer of another material of the same type as that of the disc but which contains a higher proportion of oxygen than the body of the disc.
  • a thin socalled barrier layer of another material of the same type as that of the disc but which contains a higher proportion of oxygen than the body of the disc For example titanium dioxide de posited from titanium tetrachloride or butyl titanate may be used with a semi-conducting titanium dioxide disc.
  • An electriccurrent rectifier comprising a layer of titanium dioxide in conducting condition and having a thinsurface layer-'of'titanium dioxide in non-conducting condition, a counte'relectrode on said thin surface layer and a base electrode :of silver paste on the semi-conductor layer on the surface remote fromithe barrier layer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Laminated Bodies (AREA)
  • Insulating Bodies (AREA)
US180100A 1949-08-26 1950-08-17 Electric current rectifier Expired - Lifetime US2695380A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22203/49A GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers

Publications (1)

Publication Number Publication Date
US2695380A true US2695380A (en) 1954-11-23

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ID=10175594

Family Applications (1)

Application Number Title Priority Date Filing Date
US180100A Expired - Lifetime US2695380A (en) 1949-08-26 1950-08-17 Electric current rectifier

Country Status (6)

Country Link
US (1) US2695380A (ja)
BE (1) BE497748A (ja)
CH (1) CH311957A (ja)
DE (1) DE976691C (ja)
FR (1) FR1023735A (ja)
GB (1) GB672732A (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2820184A (en) * 1953-03-11 1958-01-14 Sylvania Electric Prod Titanate rectifiers
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2851405A (en) * 1953-07-03 1958-09-09 Sylvania Electric Prod Titanate rectifiers
DE1042133B (de) * 1955-10-09 1958-10-30 Koji Yoshida Verfahren zur Herstellung von Titanoxyd-Gleichrichtern
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2922730A (en) * 1956-06-07 1960-01-26 Feldman Charles Method of forming thin films of barium titanate
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
US2972570A (en) * 1955-04-07 1961-02-21 Eastman Kodak Co Thin film ceramic capacitor and method of making
US3223601A (en) * 1959-06-26 1965-12-14 Quartz & Silice S A Process of forming dielectric materials for condensers
US3262867A (en) * 1962-11-28 1966-07-26 Lockheed Aircraft Corp Method for making film capacitors
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors
US3507759A (en) * 1966-09-15 1970-04-21 American Cyanamid Co Removal of conductive metal oxide from a metal oxide coated insulating substrate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US879062A (en) * 1907-04-05 1908-02-11 Massachusetts Wireless Equipment Company Rectifier and detector.
US929582A (en) * 1908-09-10 1909-07-27 William P Mashinter Electric-current rectifier.
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE667780C (de) * 1937-09-28 1938-11-19 John James Kirwan Verfahren zum Herstellen von Mundstueckbelag
NL65452C (ja) * 1938-10-11
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
FR1271560A (ja) * 1959-08-01 1962-01-19

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US879062A (en) * 1907-04-05 1908-02-11 Massachusetts Wireless Equipment Company Rectifier and detector.
US929582A (en) * 1908-09-10 1909-07-27 William P Mashinter Electric-current rectifier.
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2820184A (en) * 1953-03-11 1958-01-14 Sylvania Electric Prod Titanate rectifiers
US2851405A (en) * 1953-07-03 1958-09-09 Sylvania Electric Prod Titanate rectifiers
US2972570A (en) * 1955-04-07 1961-02-21 Eastman Kodak Co Thin film ceramic capacitor and method of making
DE1042133B (de) * 1955-10-09 1958-10-30 Koji Yoshida Verfahren zur Herstellung von Titanoxyd-Gleichrichtern
US2922730A (en) * 1956-06-07 1960-01-26 Feldman Charles Method of forming thin films of barium titanate
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
US3223601A (en) * 1959-06-26 1965-12-14 Quartz & Silice S A Process of forming dielectric materials for condensers
US3262867A (en) * 1962-11-28 1966-07-26 Lockheed Aircraft Corp Method for making film capacitors
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors
US3507759A (en) * 1966-09-15 1970-04-21 American Cyanamid Co Removal of conductive metal oxide from a metal oxide coated insulating substrate

Also Published As

Publication number Publication date
BE497748A (ja)
GB672732A (en) 1952-05-28
CH311957A (fr) 1955-12-15
DE976691C (de) 1964-02-27
FR1023735A (fr) 1953-03-23

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