GB672732A - Improvements in or relating to electric current rectifiers - Google Patents

Improvements in or relating to electric current rectifiers

Info

Publication number
GB672732A
GB672732A GB22203/49A GB2220349A GB672732A GB 672732 A GB672732 A GB 672732A GB 22203/49 A GB22203/49 A GB 22203/49A GB 2220349 A GB2220349 A GB 2220349A GB 672732 A GB672732 A GB 672732A
Authority
GB
United Kingdom
Prior art keywords
titanium dioxide
layer
deposited
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22203/49A
Inventor
Simon Ernest Mayer
Henley Frank Sterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE497748D priority Critical patent/BE497748A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB22203/49A priority patent/GB672732A/en
Priority to US180100A priority patent/US2695380A/en
Priority to FR1023735D priority patent/FR1023735A/en
Priority to CH311957D priority patent/CH311957A/en
Priority to DEJ3988A priority patent/DE976691C/en
Publication of GB672732A publication Critical patent/GB672732A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Laminated Bodies (AREA)
  • Insulating Bodies (AREA)

Abstract

672,732. Asymmetrically-conducting resistances. STANDARD TELEPHONES & CABLES, Ltd. Aug. 25, 1950 [Aug. 26, 1949], No. 22203/49. Class 37. A rectifier comprises a semi-conductor layer separated by a barrier layer from the counter electrode, the semi-conductor layer being deficient in oxygen in comparison with the barrier layer. Preferably the semi-conductor layer is titanium dioxide in conducting condition and the barrier layer is a thin film of titanium dioxide in non-conducting condition. Titanium dioxide is compressed to a disc having a density of 3.5, is dried and heated to 1050 C. for 1¢ hours and then to 1300 ‹ C. for an hour, being allowed to cool in a hydrogen atmosphere which may contain nitrogen. A base electrode of silver is deposited, the opposite face being polished and heated to 500 ‹C. in an oxygas flame; alternatively, this surface may be oxidized chemically or electrolytically, e.g. by anodic treatment in sulphuric or oxalic acid. A separate barrier of titanium dioxide layer may be deposited from titanium tetrachloride or butyl titanate. A counter-electrode of lead foil or tellurium is then applied, or a silver counterelectrode may be deposited; if tellurium is used, it may be mixed with a metal oxide, e.g. thallic oxide. Barium or other titanate may be used in place of titanium dioxide, or the titanium dioxide, or the titanium dioxide may be mixed with other metallic oxides. Where a back-plate is required to give rigidity, a layer of iron particles and a layer of the semi-conductor are sintered, or titanium dioxide may be deposited on an iron plate by the decomposition of butyl titanate. Specification 569,388, [Group II], is referred to.
GB22203/49A 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers Expired GB672732A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BE497748D BE497748A (en) 1949-08-26
GB22203/49A GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers
US180100A US2695380A (en) 1949-08-26 1950-08-17 Electric current rectifier
FR1023735D FR1023735A (en) 1949-08-26 1950-08-24 Improvements to electric current rectifiers
CH311957D CH311957A (en) 1949-08-26 1950-08-25 Electric current rectifier.
DEJ3988A DE976691C (en) 1949-08-26 1951-04-01 Process for the manufacture of dry rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22203/49A GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers

Publications (1)

Publication Number Publication Date
GB672732A true GB672732A (en) 1952-05-28

Family

ID=10175594

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22203/49A Expired GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers

Country Status (6)

Country Link
US (1) US2695380A (en)
BE (1) BE497748A (en)
CH (1) CH311957A (en)
DE (1) DE976691C (en)
FR (1) FR1023735A (en)
GB (1) GB672732A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2766509A (en) * 1952-05-22 1956-10-16 Gen Electric Titanium dioxide rectifier
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2820184A (en) * 1953-03-11 1958-01-14 Sylvania Electric Prod Titanate rectifiers
US2851405A (en) * 1953-07-03 1958-09-09 Sylvania Electric Prod Titanate rectifiers
US2972570A (en) * 1955-04-07 1961-02-21 Eastman Kodak Co Thin film ceramic capacitor and method of making
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
US2922730A (en) * 1956-06-07 1960-01-26 Feldman Charles Method of forming thin films of barium titanate
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
FR1237912A (en) * 1959-06-26 1960-08-05 Quartz & Silice Improvements in the manufacture of dielectrics, in particular for electrolytic capacitors
US3262867A (en) * 1962-11-28 1966-07-26 Lockheed Aircraft Corp Method for making film capacitors
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors
US3507759A (en) * 1966-09-15 1970-04-21 American Cyanamid Co Removal of conductive metal oxide from a metal oxide coated insulating substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US879062A (en) * 1907-04-05 1908-02-11 Massachusetts Wireless Equipment Company Rectifier and detector.
US929582A (en) * 1908-09-10 1909-07-27 William P Mashinter Electric-current rectifier.
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells
DE667780C (en) * 1937-09-28 1938-11-19 John James Kirwan Process for the production of mouthpiece coverings
NL65452C (en) * 1938-10-11
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
DE946075C (en) * 1945-03-29 1956-07-26 Siemens Ag Dry barrier rectifier
FR1271560A (en) * 1959-08-01 1962-01-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication

Also Published As

Publication number Publication date
BE497748A (en)
CH311957A (en) 1955-12-15
US2695380A (en) 1954-11-23
DE976691C (en) 1964-02-27
FR1023735A (en) 1953-03-23

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