GB683817A - Improvements in or relating to dry contact rectifiers - Google Patents

Improvements in or relating to dry contact rectifiers

Info

Publication number
GB683817A
GB683817A GB3121649A GB3121649A GB683817A GB 683817 A GB683817 A GB 683817A GB 3121649 A GB3121649 A GB 3121649A GB 3121649 A GB3121649 A GB 3121649A GB 683817 A GB683817 A GB 683817A
Authority
GB
United Kingdom
Prior art keywords
oxide
disc
semi
conductive metal
counter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3121649A
Inventor
Simon Ernst Mayer
Ronald Alfred Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3121649A priority Critical patent/GB683817A/en
Priority to BE499802D priority patent/BE499802A/xx
Priority to CH313670D priority patent/CH313670A/en
Priority to FR1029118D priority patent/FR1029118A/en
Priority to FR63419D priority patent/FR63419E/en
Publication of GB683817A publication Critical patent/GB683817A/en
Priority to FR66848D priority patent/FR66848E/en
Priority to FR67184D priority patent/FR67184E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier

Abstract

683,817. Dry contact rectifiers. STANDARD TELEPHONES & CABLES, Ltd. Dec. 1, 1950 [Dec. 5, 1949], No. 31216/49. Class 37. A dry contact rectifier comprises a disc or plate made up of one or more consolidated semi-conductive metal oxides and, in intimate contact with the semi-conductive layer, a counter electrode disc or layer made up of one or more metallically conductive metal oxides. The Specification defines a semi-conductive metal oxide as one with a negative resistance/ temperature coefficient and a metallically conductive metal oxide as one with a positive resistance/temperature coefficient. The first category includes titanium dioxide, nickel oxide and zinc oxide, and the second category includes lead dioxide ferroso-ferric-oxide, manganese dioxide and thallic oxide. In embodiments described a semi-conductive sintered disc wholly of TiO 2 or TiO 2 with 10 per cent of lead borate and with preferably a re-oxidized surface is in contact with a counter electrode disc or layer composed of lead dioxide or thallic oxide or a mixture of these oxides. The counter electrode layer may be applied to the surface of a prepared TiO 2 disc by deposition from suspension in powdered form in a lacquer.
GB3121649A 1949-12-05 1949-12-05 Improvements in or relating to dry contact rectifiers Expired GB683817A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB3121649A GB683817A (en) 1949-12-05 1949-12-05 Improvements in or relating to dry contact rectifiers
BE499802D BE499802A (en) 1949-12-05 1950-12-05
CH313670D CH313670A (en) 1949-12-05 1950-12-05 Dry Contact Type AC Rectifier
FR1029118D FR1029118A (en) 1949-12-05 1950-12-05 Improvements to dry straighteners
FR63419D FR63419E (en) 1949-12-05 1952-10-22 Improvements to dry straighteners
FR66848D FR66848E (en) 1949-12-05 1954-10-01 Improvements to dry straighteners
FR67184D FR67184E (en) 1949-12-05 1954-10-08 Improvements to dry straighteners

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3121649A GB683817A (en) 1949-12-05 1949-12-05 Improvements in or relating to dry contact rectifiers

Publications (1)

Publication Number Publication Date
GB683817A true GB683817A (en) 1952-12-03

Family

ID=10319766

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3121649A Expired GB683817A (en) 1949-12-05 1949-12-05 Improvements in or relating to dry contact rectifiers

Country Status (4)

Country Link
BE (1) BE499802A (en)
CH (1) CH313670A (en)
FR (1) FR1029118A (en)
GB (1) GB683817A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2711497A (en) * 1953-10-06 1955-06-21 Ruben Samuel Alternating current rectifier and method of making the same
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB702620A (en) * 1951-10-26 1954-01-20 Standard Telephones Cables Ltd Improvements in or relating to dry contact rectifiers
NL246765A (en) * 1958-12-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2711497A (en) * 1953-10-06 1955-06-21 Ruben Samuel Alternating current rectifier and method of making the same
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device

Also Published As

Publication number Publication date
BE499802A (en) 1951-06-05
FR1029118A (en) 1953-05-29
CH313670A (en) 1956-04-30

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