CH311957A - Electric current rectifier. - Google Patents

Electric current rectifier.

Info

Publication number
CH311957A
CH311957A CH311957DA CH311957A CH 311957 A CH311957 A CH 311957A CH 311957D A CH311957D A CH 311957DA CH 311957 A CH311957 A CH 311957A
Authority
CH
Switzerland
Prior art keywords
electric current
current rectifier
rectifier
electric
current
Prior art date
Application number
Other languages
French (fr)
Inventor
S A Standard Telephone E Radio
Original Assignee
Standard Telephone & Radio Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone & Radio Sa filed Critical Standard Telephone & Radio Sa
Publication of CH311957A publication Critical patent/CH311957A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Laminated Bodies (AREA)
  • Insulating Bodies (AREA)
CH311957D 1949-08-26 1950-08-25 Electric current rectifier. CH311957A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22203/49A GB672732A (en) 1949-08-26 1949-08-26 Improvements in or relating to electric current rectifiers

Publications (1)

Publication Number Publication Date
CH311957A true CH311957A (en) 1955-12-15

Family

ID=10175594

Family Applications (1)

Application Number Title Priority Date Filing Date
CH311957D CH311957A (en) 1949-08-26 1950-08-25 Electric current rectifier.

Country Status (6)

Country Link
US (1) US2695380A (en)
BE (1) BE497748A (en)
CH (1) CH311957A (en)
DE (1) DE976691C (en)
FR (1) FR1023735A (en)
GB (1) GB672732A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2883305A (en) * 1950-09-27 1959-04-21 Auwarter Max Photoelectric semiconductors and method of producing same
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2820184A (en) * 1953-03-11 1958-01-14 Sylvania Electric Prod Titanate rectifiers
US2851405A (en) * 1953-07-03 1958-09-09 Sylvania Electric Prod Titanate rectifiers
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US2972570A (en) * 1955-04-07 1961-02-21 Eastman Kodak Co Thin film ceramic capacitor and method of making
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
US2922730A (en) * 1956-06-07 1960-01-26 Feldman Charles Method of forming thin films of barium titanate
US2967282A (en) * 1957-09-30 1961-01-03 Gen Electric High temperature resistor
FR1237912A (en) * 1959-06-26 1960-08-05 Quartz & Silice Improvements in the manufacture of dielectrics, in particular for electrolytic capacitors
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication
US3262867A (en) * 1962-11-28 1966-07-26 Lockheed Aircraft Corp Method for making film capacitors
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors
US3507759A (en) * 1966-09-15 1970-04-21 American Cyanamid Co Removal of conductive metal oxide from a metal oxide coated insulating substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US879062A (en) * 1907-04-05 1908-02-11 Massachusetts Wireless Equipment Company Rectifier and detector.
US929582A (en) * 1908-09-10 1909-07-27 William P Mashinter Electric-current rectifier.
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells
DE667780C (en) * 1937-09-28 1938-11-19 John James Kirwan Process for the production of mouthpiece coverings
BE475711A (en) * 1938-10-11
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
DE946075C (en) * 1945-03-29 1956-07-26 Siemens Ag Dry barrier rectifier
FR1271560A (en) * 1959-08-01 1962-01-19

Also Published As

Publication number Publication date
GB672732A (en) 1952-05-28
FR1023735A (en) 1953-03-23
BE497748A (en)
DE976691C (en) 1964-02-27
US2695380A (en) 1954-11-23

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