US2766509A - Titanium dioxide rectifier - Google Patents

Titanium dioxide rectifier Download PDF

Info

Publication number
US2766509A
US2766509A US289247A US28924752A US2766509A US 2766509 A US2766509 A US 2766509A US 289247 A US289247 A US 289247A US 28924752 A US28924752 A US 28924752A US 2766509 A US2766509 A US 2766509A
Authority
US
United States
Prior art keywords
layer
hours
titanium dioxide
titanium
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US289247A
Inventor
Loup Theodore E Le
John C Marinace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to US289247A priority Critical patent/US2766509A/en
Priority to US289248A priority patent/US2766508A/en
Priority to GB13887/53A priority patent/GB733267A/en
Priority to GB13888/53A priority patent/GB736251A/en
Priority to BE520122D priority patent/BE520122A/xx
Priority to FR1083556D priority patent/FR1083556A/en
Application granted granted Critical
Publication of US2766509A publication Critical patent/US2766509A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making

Definitions

  • the present invention relates to an improved alternating current rectifying device and method for producing such a device; more particularly; the invention relates to a rectifying device employing titanium dioxide as the rectifying medium.
  • Plate rectifiers of the copper oxide and selenium type have been known for many years. Other substances which are good semi-conductors have been known but in general their use for rectification purposes has not measured up in quality to plate rectifiers utilizing copper oxide or selenium;
  • a rectifier comprises a base electrode composed of titanium which has a layer of titanium dioxide in which titanium metal is incorporated, overlying at least a portion of the titanium surface, and a metal electrode of high work function or one having a higher work func tion than the titanium dioxide overlying the layer of titanium dioxide.
  • Fig. 1 is a sectional view showing the layers of a rectifier produced in accordance with this invention.
  • Fig. 2 is a sectional view of an alternative embodiment of the invention.
  • a base electrode 10 composed of titanium metal, is subjected to a treatment which produces a partially-reduced oxide layer 11 over all, or a portion of, its surface.
  • a ⁇ counterelectrode layer 12 composed of a metal or alloy having a higher work function than layer 11.
  • the base electrode is made thick enough to provide structural rigidity for the rectifier.
  • layers 11 and 12 is greatly exaggerated in the drawing in order to achieve clarity of illustration. In actual practice these layers may be less than a thousandth of an inch in thickness.
  • the layer 11 may have a thickness of about 0.0005".
  • Fig. 2 the base electrode 10, partially reduced oxide layer 11, and counterelectrode 12 are the same as in Fig. 1.
  • Fig. 2 includes a blocking layer 11a which is applied to the partially reduced oxide layer 11.
  • the layer 11a may be composed of a semiconducting oxide such as an oxide of germanium, silicon, or titanium. These oxides may be applied by vapor deposition in a vacuum.
  • the layer 1111 may also be produced by further oxidation of the surface portion of the partially reduced oxide layer 11 as by heating the layer 11 in the presence of free oxygen.
  • the titanium plate forming the base electrode 10 is provided with a clean surface. This may be accomplished by an abrasive process or by immersing the plate in an acid cleaning solution. A solution of 80% nitric acid and 20% hydrofluoric acid is satisfactory for this purpose. After the base electrode 10 has been provided with a clean surface, it is subjected The thickness of the.
  • Titanium has a very high melting point and consequently the oxidation step may be carried out at a high temperature in order to promote rapid oxidation. I prefer temperatures in excess of 600 C. for this purpose and preferably within the range of 600 C. [to 800 C. However, there is nothing critical about this temperature range. Lower temperatures may be used but the time of treatment to produce a satisfactory oxide layer must be increased. Temperatures above 800 C.
  • the rate of oxidation is fairly rapid, and it is difficult .to maintain close control over the thickness of the oxide layer.
  • the time of .treatment may run to many, many hours.
  • oxidation in air for a period of 2' to 4 hours is suflicient.
  • the layer 11 of titanium dioxide must be partially reduced. This reduction may be carried out by maintaining the temperature at the same level that was used for oxidation but changing the atmosphere to a reducing atmosphere, preferably provided by hydrogen. Continuing the heat treatment for four to eight hours in a hydrogen atmosphere is normally sufiicient to bring about :the partial reduction of the oxide layer 11.
  • Air oxidation is satisfactory for the purposes of this invention but we prefer to have the oxidation take place in an atmosphere of steam.
  • Treatment in a steam atmosphere at a temperature of about 650 C. for about 4 hours is suflicient to produce a partially reduced oxide layer having a thickness of approximately 0.005", which is satisfactory for our purposes.
  • the layer is applied by heat treatment in an atmosphere of air followed by heat treatment in an atmosphere of hydrogen.
  • the layer is applied by heat treatment in an atmosphere of steam. Both treatments produce a layer 11 which has a certain amount of reduced titanium metal in it. In .the case of the steam treatment, this is brought about by the fact that the breakdown of the water vapor molecule to provide the oxygen for oxidation results in the production of a hydrogen molecule which has a reducing effect. Rectification requires that the layer 11 contain some titanium in the reduced state.
  • the counterelectrode 12 is composed of a metal having a work function greater than that of layer 11 such as bismuth, nickel, or platinum. Metals having a Work function lower than that of layer 11, such as cadmium, zinc, tin, aluminum, and magnesium, are not satisfactory counterelectrodes as the resulting rectifier would have inferior rectification properties.
  • the partially reduced oxide layer is an n type semiconductor and, as previously explained, the free titanium associated with the layer 11 contributes the electron conduction.
  • the counterelectrodes of bismuth, nickel, or platinum all having missing electrons in their d shells which contribute holes for p type conduction. Counterelectrodes of materials having these characteristics are satisfactory for our purpose. Accordingly, the term metals of high Work function is intended to include metals which have missing electrons in their d shells and which have p type conduction.
  • the counterelectrode 12 may be applied by any method which insures a union between the layers 11 (or 11a) and 12. Application from the molten state will accom- Patented Oct. 16, 1956 plish this it carefully performed and vapor deposition is also satisfactory. Bismuth lends itself readily to vapor deposition and for this reason we prefer to utilize this metal as a counterelectrode.
  • the method of preparing a titanium dioxide rectifier which comprises oxidizing at least one surface of a titanium plate by heating it in air for from four hours at 600 C. to two hours at 800 C., reducing the resulting oxide surface by heating said plate in a hydrogen atmosphere for from eight hours at 600 C. to four hours at 800 C. and coating said reduced surface layer with a counterelectrode metal of work function greater than that of said reduced surface layer, said counterelectrode metal being selected from the group consisting of bismuth, p1atinum and nickel.
  • the method of preparing a titanium dioxide rectifier which comprises partially oxidizing at least one surface of a titanium plate in a steam atmosphere for about four hours at about 600 C. and coating the partially oxidized surface with a counterelectrode metal of work function greater than that of said partially oxidized surface, said counterelectrode metal being selected from the group consisting of bismuth, platinum and nickel.
  • the method of preparing a titanium dioxide rectifier which comprises oxidizing a surface of a titanium plate by heating said plate in air for from four hours at 600 C. to two hours at 800 C., reducing the surface of the resulting oxide layer by heating said plate in a hydrogen atmosphere for a period of from four to eight hours at a temperature of about 600 C. and coating the reduced surface of said oxide layer with a counterelectrode metal having a work function greater than that of said reduced surface, said counterelectrode metal being selected from the group consisting of bismuth, platinum and nickel.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Inert Electrodes (AREA)

Description

Oct 1956 T, E. LE LOUP ET AL 2,766,509
TITANIUM DIOXIDE RECTIFIER Filed May 22, 1952 Inv entor's:
Theodor e E. Le Loup,
John C. Mari mace,
by 4. TheirA-tt-orney.
United States Patent 70 TITANIUM DIOXIDE RECTIFIER Theodore Le Loup and John 'C. Marinace, Schenectady, N. Y., assignors to General Electric Company, a corporation of New York Application May 22,- 1952, Serial No. 289,247
3 Claims. (Cl. 29-2523) The present invention relates to an improved alternating current rectifying device and method for producing such a device; more particularly; the invention relates to a rectifying device employing titanium dioxide as the rectifying medium.
Plate rectifiers of the copper oxide and selenium type have been known for many years. Other substances which are good semi-conductors have been known but in general their use for rectification purposes has not measured up in quality to plate rectifiers utilizing copper oxide or selenium;
It is an object of this invention to provide a titanium dioxide alternating current rectifier of the plate type which has a high degree of temperature stability and in other respects compares favorably with rectifiers utilizing copper oxide and selenium.
Briefly stated, in accordance with one embodiment of this invention, a rectifier comprises a base electrode composed of titanium which has a layer of titanium dioxide in which titanium metal is incorporated, overlying at least a portion of the titanium surface, and a metal electrode of high work function or one having a higher work func tion than the titanium dioxide overlying the layer of titanium dioxide.
In the drawing Fig. 1 is a sectional view showing the layers of a rectifier produced in accordance with this invention. Fig. 2 is a sectional view of an alternative embodiment of the invention. In Fig. 1, a base electrode 10, composed of titanium metal, is subjected to a treatment which produces a partially-reduced oxide layer 11 over all, or a portion of, its surface. Overlying the layer 11 is a \counterelectrode layer 12 composed of a metal or alloy having a higher work function than layer 11.
The base electrode is made thick enough to provide structural rigidity for the rectifier. layers 11 and 12 is greatly exaggerated in the drawing in order to achieve clarity of illustration. In actual practice these layers may be less than a thousandth of an inch in thickness. For example, the layer 11 may have a thickness of about 0.0005".
In Fig. 2, the base electrode 10, partially reduced oxide layer 11, and counterelectrode 12 are the same as in Fig. 1. However, Fig. 2 includes a blocking layer 11a which is applied to the partially reduced oxide layer 11. The layer 11a may be composed of a semiconducting oxide such as an oxide of germanium, silicon, or titanium. These oxides may be applied by vapor deposition in a vacuum. The layer 1111 may also be produced by further oxidation of the surface portion of the partially reduced oxide layer 11 as by heating the layer 11 in the presence of free oxygen.
In fabricating the rectifier, the titanium plate forming the base electrode 10 is provided with a clean surface. This may be accomplished by an abrasive process or by immersing the plate in an acid cleaning solution. A solution of 80% nitric acid and 20% hydrofluoric acid is satisfactory for this purpose. After the base electrode 10 has been provided with a clean surface, it is subjected The thickness of the.
to a heat treatment in an atmosphere containing oxygen in order to produce the thin layer 11 of titanium dioxide. While the layer 11- is shown as covering only a portion of one surface of the base electrode 10, it is frequently easier in actual practice to cover the entire surface of the electrode 10 with the oxide layer. Titanium has a very high melting point and consequently the oxidation step may be carried out at a high temperature in order to promote rapid oxidation. I prefer temperatures in excess of 600 C. for this purpose and preferably within the range of 600 C. [to 800 C. However, there is nothing critical about this temperature range. Lower temperatures may be used but the time of treatment to produce a satisfactory oxide layer must be increased. Temperatures above 800 C. may also be used but in this event the rate of oxidation is fairly rapid, and it is difficult .to maintain close control over the thickness of the oxide layer. At temperatures above 800 C. treatment for just a few minutes is sufficient to provide an oxide layer of the necessary thickness while at temperatures below 600 C. the time of .treatment may run to many, many hours. Within the range 600 C. to 800 C. oxidation in air for a period of 2' to 4 hours is suflicient.
The layer 11 of titanium dioxide must be partially reduced. This reduction may be carried out by maintaining the temperature at the same level that was used for oxidation but changing the atmosphere to a reducing atmosphere, preferably provided by hydrogen. Continuing the heat treatment for four to eight hours in a hydrogen atmosphere is normally sufiicient to bring about :the partial reduction of the oxide layer 11.
Air oxidation is satisfactory for the purposes of this invention but we prefer to have the oxidation take place in an atmosphere of steam. Treatment in a steam atmosphere at a temperature of about 650 C. for about 4 hours is suflicient to produce a partially reduced oxide layer having a thickness of approximately 0.005", which is satisfactory for our purposes.
Two methods of treatment with reference to the layer 11 have been described. On the one hand, the layer is applied by heat treatment in an atmosphere of air followed by heat treatment in an atmosphere of hydrogen. On the other hand, the layer is applied by heat treatment in an atmosphere of steam. Both treatments produce a layer 11 which has a certain amount of reduced titanium metal in it. In .the case of the steam treatment, this is brought about by the fact that the breakdown of the water vapor molecule to provide the oxygen for oxidation results in the production of a hydrogen molecule which has a reducing effect. Rectification requires that the layer 11 contain some titanium in the reduced state.
The counterelectrode 12 is composed of a metal having a work function greater than that of layer 11 such as bismuth, nickel, or platinum. Metals having a Work function lower than that of layer 11, such as cadmium, zinc, tin, aluminum, and magnesium, are not satisfactory counterelectrodes as the resulting rectifier would have inferior rectification properties.
The partially reduced oxide layer is an n type semiconductor and, as previously explained, the free titanium associated with the layer 11 contributes the electron conduction. The counterelectrodes of bismuth, nickel, or platinum all having missing electrons in their d shells which contribute holes for p type conduction. Counterelectrodes of materials having these characteristics are satisfactory for our purpose. Accordingly, the term metals of high Work function is intended to include metals which have missing electrons in their d shells and which have p type conduction.
The counterelectrode 12 may be applied by any method which insures a union between the layers 11 (or 11a) and 12. Application from the molten state will accom- Patented Oct. 16, 1956 plish this it carefully performed and vapor deposition is also satisfactory. Bismuth lends itself readily to vapor deposition and for this reason we prefer to utilize this metal as a counterelectrode.
Rectifiers made in accordance with our teaching possess excellent stability under high temperature conditions and in other respects, such as current loading and voltage rating, are on a par with selenium rectifiers.
While the present invention has been described with reference to particular embodiments thereof, it will be understood that numerous modifications may be made by those skilled in the art without actually departing from the invention. Therefore, we aim in the appended claims to cover all such equivalent variations as come within the true spirit and scope of the foregoing disclosure.
What we claim as new and desire to secure by Letters Patent of the United States is:
l. The method of preparing a titanium dioxide rectifier which comprises oxidizing at least one surface of a titanium plate by heating it in air for from four hours at 600 C. to two hours at 800 C., reducing the resulting oxide surface by heating said plate in a hydrogen atmosphere for from eight hours at 600 C. to four hours at 800 C. and coating said reduced surface layer with a counterelectrode metal of work function greater than that of said reduced surface layer, said counterelectrode metal being selected from the group consisting of bismuth, p1atinum and nickel.
2. The method of preparing a titanium dioxide rectifier which comprises partially oxidizing at least one surface of a titanium plate in a steam atmosphere for about four hours at about 600 C. and coating the partially oxidized surface with a counterelectrode metal of work function greater than that of said partially oxidized surface, said counterelectrode metal being selected from the group consisting of bismuth, platinum and nickel.
3. The method of preparing a titanium dioxide rectifier which comprises oxidizing a surface of a titanium plate by heating said plate in air for from four hours at 600 C. to two hours at 800 C., reducing the surface of the resulting oxide layer by heating said plate in a hydrogen atmosphere for a period of from four to eight hours at a temperature of about 600 C. and coating the reduced surface of said oxide layer with a counterelectrode metal having a work function greater than that of said reduced surface, said counterelectrode metal being selected from the group consisting of bismuth, platinum and nickel.
References Cited in the file of this patent UNITED STATES PATENTS 2,721,966 Jenkins et a1 Oct. 25, 1955 FOREIGN PATENTS 483,088 Great Britain Apr. 12, 1938 OTHER REFERENCES Electronic Engineering, October 1946, pp. 313-315.

Claims (1)

1. THE METHOD OF PREPARING A TITANIUM DIOXIDE RECTIFIER WHICH COMPRISES OXIDIZING AT LEAST ONE SURFACE OF A TITANIUM PLATE BY HEATING IT IN AIR FOR FROM FOUR HOURS AT 600* C. TO TWO HOURS AT 800* C., REDUCING THE RESULTING OXIDE SURFACE BY HEATING SAID PLATE IN A HYDROGEN ATMOSPHERE FOR FROM EIGHT HOURS AT 600* C. TO FOUR HOURS AT 800* C. AND COATING SAID REDUCED SURFACE LAYER WITH A COUNTERELECTRODE METAL OF WORK FUNCTION GREATER THAN THAT OF SAID REDUCED SURFACE LAYER, SAID COUNTERELECTRODE METAL BEING SELECTED FROM THE GROUP CONSISTING OF BISMUTH, PLATINUM AND NICKEL.
US289247A 1952-05-22 1952-05-22 Titanium dioxide rectifier Expired - Lifetime US2766509A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US289247A US2766509A (en) 1952-05-22 1952-05-22 Titanium dioxide rectifier
US289248A US2766508A (en) 1952-05-22 1952-05-22 Blocking layer for titanium oxide rectifier
GB13887/53A GB733267A (en) 1952-05-22 1953-05-18 Improvements in and relating to titanium dioxide rectifiers
GB13888/53A GB736251A (en) 1952-05-22 1953-05-18 Improvements in and relating to titanium oxide rectifiers
BE520122D BE520122A (en) 1952-05-22 1953-05-21
FR1083556D FR1083556A (en) 1952-05-22 1953-05-22 New titanium dioxide straightener

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US289247A US2766509A (en) 1952-05-22 1952-05-22 Titanium dioxide rectifier
US289248A US2766508A (en) 1952-05-22 1952-05-22 Blocking layer for titanium oxide rectifier

Publications (1)

Publication Number Publication Date
US2766509A true US2766509A (en) 1956-10-16

Family

ID=26965538

Family Applications (2)

Application Number Title Priority Date Filing Date
US289247A Expired - Lifetime US2766509A (en) 1952-05-22 1952-05-22 Titanium dioxide rectifier
US289248A Expired - Lifetime US2766508A (en) 1952-05-22 1952-05-22 Blocking layer for titanium oxide rectifier

Family Applications After (1)

Application Number Title Priority Date Filing Date
US289248A Expired - Lifetime US2766508A (en) 1952-05-22 1952-05-22 Blocking layer for titanium oxide rectifier

Country Status (4)

Country Link
US (2) US2766509A (en)
BE (1) BE520122A (en)
FR (1) FR1083556A (en)
GB (2) GB736251A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2940941A (en) * 1953-05-26 1960-06-14 R daltqn
US2942134A (en) * 1955-03-16 1960-06-21 Bendix Aviat Corp Gap bridging material
US2978618A (en) * 1959-04-13 1961-04-04 Thomas E Myers Semiconductor devices and method of making the same
US3139754A (en) * 1961-06-15 1964-07-07 Sylvania Electric Prod Electronic vacuum gauge
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
US3384879A (en) * 1964-03-13 1968-05-21 Bbc Brown Boveri & Cie Diode-matrix device for data storing and translating purposes
US3391309A (en) * 1963-07-15 1968-07-02 Melpar Inc Solid state cathode
US3502953A (en) * 1968-01-03 1970-03-24 Corning Glass Works Solid state current controlled diode with a negative resistance characteristic
US4361951A (en) * 1981-04-22 1982-12-07 Ford Motor Company Method of fabricating a titanium dioxide rectifier
US4385966A (en) * 1980-10-07 1983-05-31 Bell Telephone Laboratories, Incorporated Fabrication of thin film resistors and capacitors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL246765A (en) * 1958-12-23
US3264707A (en) * 1963-12-30 1966-08-09 Rca Corp Method of fabricating semiconductor devices
US3337429A (en) * 1964-05-28 1967-08-22 Union Carbide Corp Solid electrolytic capacitor and process therefor
US4394672A (en) * 1981-04-22 1983-07-19 Ford Motor Company Titanium dioxide rectifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL34153C (en) * 1930-03-08 1934-10-23 Philips Nv
US1955564A (en) * 1931-10-14 1934-04-17 Gen Electric Electric current rectifier
US2291592A (en) * 1940-08-10 1942-07-28 Union Switch & Signal Co Electrical rectifier
BE497748A (en) * 1949-08-26
US2692212A (en) * 1950-02-09 1954-10-19 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB483088A (en) * 1936-10-13 1938-04-12 Franz Rother Improvements in and relating to barrier plane rectifying cells and photo-electric cells
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2940941A (en) * 1953-05-26 1960-06-14 R daltqn
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
US2942134A (en) * 1955-03-16 1960-06-21 Bendix Aviat Corp Gap bridging material
US2978618A (en) * 1959-04-13 1961-04-04 Thomas E Myers Semiconductor devices and method of making the same
US3139754A (en) * 1961-06-15 1964-07-07 Sylvania Electric Prod Electronic vacuum gauge
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
US3391309A (en) * 1963-07-15 1968-07-02 Melpar Inc Solid state cathode
US3384879A (en) * 1964-03-13 1968-05-21 Bbc Brown Boveri & Cie Diode-matrix device for data storing and translating purposes
US3502953A (en) * 1968-01-03 1970-03-24 Corning Glass Works Solid state current controlled diode with a negative resistance characteristic
US4385966A (en) * 1980-10-07 1983-05-31 Bell Telephone Laboratories, Incorporated Fabrication of thin film resistors and capacitors
US4361951A (en) * 1981-04-22 1982-12-07 Ford Motor Company Method of fabricating a titanium dioxide rectifier

Also Published As

Publication number Publication date
GB736251A (en) 1955-09-07
US2766508A (en) 1956-10-16
GB733267A (en) 1955-07-06
FR1083556A (en) 1955-01-11
BE520122A (en) 1955-05-27

Similar Documents

Publication Publication Date Title
US2766509A (en) Titanium dioxide rectifier
US2682101A (en) Oxidation protected tungsten and molybdenum bodies and method of producing same
US2973466A (en) Semiconductor contact
US2805370A (en) Alloyed connections to semiconductors
US2279187A (en) Alternating electric current rectifier of the selenium type
US2995475A (en) Fabrication of semiconductor devices
US2334554A (en) Method of producing blocking layer devices
US3447958A (en) Surface treatment for semiconductor devices
US2699522A (en) Titanium dioxide rectifier
US2496432A (en) Selenium rectifier
US2124306A (en) Electrical device
US2610386A (en) Semiconductive cell
US2163393A (en) Selenium rectifier having light metal carrier electrodes
US2823149A (en) Process of forming barrier layers in crystalline bodies
US2887633A (en) Titanium-dioxide rectifiers
US2692212A (en) Manufacture of dry surface contact rectifiers
US2826725A (en) P-n junction rectifier
US1936792A (en) Method of making copper oxide rectifiers for high voltage application
US2162362A (en) Asymmetrical conductor
US2383311A (en) Contact for copper oxide rectifiers
US2554237A (en) Rectifier
US2981646A (en) Process of forming barrier layers
US2465228A (en) Liquid treatment of contact surfaces for copper oxide rectifiers
US2749596A (en) Method of making titanium dioxide rectifiers
US1968571A (en) Electric current rectifier