DE884847C - Trockenkontakt-Gleichrichter bzw. lichtempfindliches Element - Google Patents

Trockenkontakt-Gleichrichter bzw. lichtempfindliches Element

Info

Publication number
DE884847C
DE884847C DEW1630A DEW0001630A DE884847C DE 884847 C DE884847 C DE 884847C DE W1630 A DEW1630 A DE W1630A DE W0001630 A DEW0001630 A DE W0001630A DE 884847 C DE884847 C DE 884847C
Authority
DE
Germany
Prior art keywords
layer
selenium
cadmium sulfide
light
sensitive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW1630A
Other languages
German (de)
English (en)
Inventor
Wayne Elias Blackburn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE884847C publication Critical patent/DE884847C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermistors And Varistors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DEW1630A 1943-12-15 1950-04-13 Trockenkontakt-Gleichrichter bzw. lichtempfindliches Element Expired DE884847C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514371A US2488369A (en) 1943-12-15 1943-12-15 Selenium rectifier

Publications (1)

Publication Number Publication Date
DE884847C true DE884847C (de) 1953-07-30

Family

ID=24046859

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW1630A Expired DE884847C (de) 1943-12-15 1950-04-13 Trockenkontakt-Gleichrichter bzw. lichtempfindliches Element

Country Status (6)

Country Link
US (1) US2488369A (enrdf_load_stackoverflow)
CH (1) CH248334A (enrdf_load_stackoverflow)
DE (1) DE884847C (enrdf_load_stackoverflow)
FR (1) FR988428A (enrdf_load_stackoverflow)
GB (1) GB596585A (enrdf_load_stackoverflow)
NL (1) NL70500C (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032669B (de) * 1953-03-17 1958-06-19 Haloid Co Lichtempfindliches Material zur Erzeugung eines latenten Ladungsbildes
DE1034290B (de) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Verfahren zur Erhoehung der Empfindlichkeit, insbesondere der Ultrarot-Empfindlichkeit, von fuer den Ultrarot-Bereich sensibilisierten Selen-Sperrschichtzellen
DE1046794B (de) * 1955-02-15 1958-12-18 Emi Ltd Verfahren zur Bildung einer fotoleitenden Schicht auf einer Traegerschicht
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
DE1097573B (de) * 1954-07-08 1961-01-19 Vickers Inc Selenhalbleiteranordnung und Verfahren zu ihrer Herstellung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (de) * 1948-10-02 1958-03-06 Standard Elektrik Ag Verfahren zur Herstellung von Trockengleichrichtern
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2886434A (en) * 1955-06-06 1959-05-12 Horizons Inc Protected photoconductive element and method of making same
US3023121A (en) * 1959-08-13 1962-02-27 Robert L Dyar Method of constructing abrasive coated cylinders

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
DE640567C (de) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Trockenplattengleichrichter
CH206837A (de) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Verfahren zur Herstellung von Selengleichrichtern.
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
CH213808A (de) * 1938-10-24 1941-03-15 Sueddeutsche Apparate Fabrik G Verfahren zur Herstellung von Sperrschicht-Photozellen.
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
DE760089C (de) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Verfahren zur Verbesserung der Sperrwirkung von Selengleichrichtern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
FR851651A (fr) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
CH206837A (de) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Verfahren zur Herstellung von Selengleichrichtern.
US2195725A (en) * 1937-11-01 1940-04-02 Hermes Patentverwertungs Gmbh Method of manufacturing selenium rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
CH213808A (de) * 1938-10-24 1941-03-15 Sueddeutsche Apparate Fabrik G Verfahren zur Herstellung von Sperrschicht-Photozellen.
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
DE760089C (de) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Verfahren zur Verbesserung der Sperrwirkung von Selengleichrichtern
DE640567C (de) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Trockenplattengleichrichter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032669B (de) * 1953-03-17 1958-06-19 Haloid Co Lichtempfindliches Material zur Erzeugung eines latenten Ladungsbildes
DE1097573B (de) * 1954-07-08 1961-01-19 Vickers Inc Selenhalbleiteranordnung und Verfahren zu ihrer Herstellung
DE1046794B (de) * 1955-02-15 1958-12-18 Emi Ltd Verfahren zur Bildung einer fotoleitenden Schicht auf einer Traegerschicht
DE1034290B (de) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Verfahren zur Erhoehung der Empfindlichkeit, insbesondere der Ultrarot-Empfindlichkeit, von fuer den Ultrarot-Bereich sensibilisierten Selen-Sperrschichtzellen
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern

Also Published As

Publication number Publication date
FR988428A (fr) 1951-08-27
GB596585A (en) 1948-01-07
CH248334A (de) 1947-04-30
US2488369A (en) 1949-11-15
NL70500C (enrdf_load_stackoverflow) 1900-01-01

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