DE7132084U - Halbleiteranordnung vorzugsweise feldeffekttransistor - Google Patents

Halbleiteranordnung vorzugsweise feldeffekttransistor

Info

Publication number
DE7132084U
DE7132084U DE19717132084U DE7132084U DE7132084U DE 7132084 U DE7132084 U DE 7132084U DE 19717132084 U DE19717132084 U DE 19717132084U DE 7132084 U DE7132084 U DE 7132084U DE 7132084 U DE7132084 U DE 7132084U
Authority
DE
Germany
Prior art keywords
gate electrode
field effect
source
semiconductor
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19717132084U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE7132084U publication Critical patent/DE7132084U/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE19717132084U 1970-08-21 1971-08-21 Halbleiteranordnung vorzugsweise feldeffekttransistor Expired DE7132084U (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585870A 1970-08-21 1970-08-21
US6585970A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
DE7132084U true DE7132084U (de) 1972-01-05

Family

ID=26746091

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19717132084U Expired DE7132084U (de) 1970-08-21 1971-08-21 Halbleiteranordnung vorzugsweise feldeffekttransistor
DE19712142050 Pending DE2142050A1 (de) 1970-08-21 1971-08-21 Halbleiteranordnung, vorzugsweise Feldeffekttransistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19712142050 Pending DE2142050A1 (de) 1970-08-21 1971-08-21 Halbleiteranordnung, vorzugsweise Feldeffekttransistor

Country Status (5)

Country Link
AU (1) AU3258271A (enExample)
BE (1) BE771608A (enExample)
DE (2) DE7132084U (enExample)
FR (1) FR2103427A1 (enExample)
NL (1) NL7111459A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360770A (en) * 1972-05-30 1974-07-24 Westinghouse Electric Corp N-channel mos transistor
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Also Published As

Publication number Publication date
AU3258271A (en) 1973-02-22
FR2103427A1 (enExample) 1972-04-14
DE2142050A1 (de) 1972-03-30
BE771608A (fr) 1972-02-21
NL7111459A (enExample) 1972-02-23

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