DE69937188D1 - Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben - Google Patents

Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Info

Publication number
DE69937188D1
DE69937188D1 DE69937188T DE69937188T DE69937188D1 DE 69937188 D1 DE69937188 D1 DE 69937188D1 DE 69937188 T DE69937188 T DE 69937188T DE 69937188 T DE69937188 T DE 69937188T DE 69937188 D1 DE69937188 D1 DE 69937188D1
Authority
DE
Germany
Prior art keywords
axis
particle beam
work stage
workpiece
beam source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937188T
Other languages
English (en)
Other versions
DE69937188T2 (de
Inventor
Charles J Libby
Billy W Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of DE69937188D1 publication Critical patent/DE69937188D1/de
Application granted granted Critical
Publication of DE69937188T2 publication Critical patent/DE69937188T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2067—Surface alteration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Steering Devices For Bicycles And Motorcycles (AREA)
  • Support Of Aerials (AREA)
  • Reciprocating Pumps (AREA)
  • Machine Tool Units (AREA)
  • Drying Of Semiconductors (AREA)
DE69937188T 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben Expired - Lifetime DE69937188T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/022,065 US6039000A (en) 1998-02-11 1998-02-11 Focused particle beam systems and methods using a tilt column
PCT/US1999/002867 WO1999041765A1 (en) 1998-02-11 1999-02-09 Focused particle beam systems and methods using a tilt column
US22065 2001-12-18

Publications (2)

Publication Number Publication Date
DE69937188D1 true DE69937188D1 (de) 2007-11-08
DE69937188T2 DE69937188T2 (de) 2008-06-26

Family

ID=21807650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937188T Expired - Lifetime DE69937188T2 (de) 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Country Status (8)

Country Link
US (2) US6039000A (de)
EP (1) EP1053562B1 (de)
JP (1) JP4754069B2 (de)
KR (1) KR100533783B1 (de)
AT (1) ATE374432T1 (de)
CA (1) CA2320149A1 (de)
DE (1) DE69937188T2 (de)
WO (1) WO1999041765A1 (de)

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JP4178741B2 (ja) 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
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Also Published As

Publication number Publication date
JP2002503870A (ja) 2002-02-05
CA2320149A1 (en) 1999-08-19
JP4754069B2 (ja) 2011-08-24
US6497194B1 (en) 2002-12-24
DE69937188T2 (de) 2008-06-26
WO1999041765A1 (en) 1999-08-19
EP1053562A1 (de) 2000-11-22
KR100533783B1 (ko) 2005-12-07
EP1053562B1 (de) 2007-09-26
ATE374432T1 (de) 2007-10-15
KR20010040911A (ko) 2001-05-15
US6039000A (en) 2000-03-21

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