ATE374432T1 - Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben - Google Patents

Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Info

Publication number
ATE374432T1
ATE374432T1 AT99908113T AT99908113T ATE374432T1 AT E374432 T1 ATE374432 T1 AT E374432T1 AT 99908113 T AT99908113 T AT 99908113T AT 99908113 T AT99908113 T AT 99908113T AT E374432 T1 ATE374432 T1 AT E374432T1
Authority
AT
Austria
Prior art keywords
axis
particle beam
work stage
workpiece
beam source
Prior art date
Application number
AT99908113T
Other languages
English (en)
Inventor
Charles Libby
Billy Ward
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE374432T1 publication Critical patent/ATE374432T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2067—Surface alteration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Drying Of Semiconductors (AREA)
  • Steering Devices For Bicycles And Motorcycles (AREA)
  • Support Of Aerials (AREA)
  • Reciprocating Pumps (AREA)
  • Machine Tool Units (AREA)
AT99908113T 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben ATE374432T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/022,065 US6039000A (en) 1998-02-11 1998-02-11 Focused particle beam systems and methods using a tilt column

Publications (1)

Publication Number Publication Date
ATE374432T1 true ATE374432T1 (de) 2007-10-15

Family

ID=21807650

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99908113T ATE374432T1 (de) 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Country Status (8)

Country Link
US (2) US6039000A (de)
EP (1) EP1053562B1 (de)
JP (1) JP4754069B2 (de)
KR (1) KR100533783B1 (de)
AT (1) ATE374432T1 (de)
CA (1) CA2320149A1 (de)
DE (1) DE69937188T2 (de)
WO (1) WO1999041765A1 (de)

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JP5959139B2 (ja) 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
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JP5117764B2 (ja) 2007-05-22 2013-01-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム加工装置
JP5410975B2 (ja) * 2007-08-08 2014-02-05 株式会社日立ハイテクサイエンス 複合集束イオンビーム装置及びそれを用いた加工観察方法
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Also Published As

Publication number Publication date
EP1053562B1 (de) 2007-09-26
KR100533783B1 (ko) 2005-12-07
DE69937188D1 (de) 2007-11-08
DE69937188T2 (de) 2008-06-26
JP2002503870A (ja) 2002-02-05
EP1053562A1 (de) 2000-11-22
US6039000A (en) 2000-03-21
US6497194B1 (en) 2002-12-24
CA2320149A1 (en) 1999-08-19
WO1999041765A1 (en) 1999-08-19
JP4754069B2 (ja) 2011-08-24
KR20010040911A (ko) 2001-05-15

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