DE69924834T2 - Verfahren und vorrichtung zur vorhersage von plasmaverfahren-oberflächenprofilen - Google Patents
Verfahren und vorrichtung zur vorhersage von plasmaverfahren-oberflächenprofilen Download PDFInfo
- Publication number
- DE69924834T2 DE69924834T2 DE69924834T DE69924834T DE69924834T2 DE 69924834 T2 DE69924834 T2 DE 69924834T2 DE 69924834 T DE69924834 T DE 69924834T DE 69924834 T DE69924834 T DE 69924834T DE 69924834 T2 DE69924834 T2 DE 69924834T2
- Authority
- DE
- Germany
- Prior art keywords
- test
- value
- surface profile
- profile
- input variable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 172
- 238000012545 processing Methods 0.000 title claims description 8
- 230000008569 process Effects 0.000 claims abstract description 128
- 238000012360 testing method Methods 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 241001589086 Bellapiscis medius Species 0.000 claims 4
- 241001400238 Dictyostelium medium Species 0.000 claims 2
- 230000007246 mechanism Effects 0.000 abstract description 5
- 238000013178 mathematical model Methods 0.000 description 14
- 238000013459 approach Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 238000011161 development Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000004422 calculation algorithm Methods 0.000 description 7
- 239000003112 inhibitor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004621 scanning probe microscopy Methods 0.000 description 2
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33997 | 1998-03-03 | ||
| US09/033,997 US6151532A (en) | 1998-03-03 | 1998-03-03 | Method and apparatus for predicting plasma-process surface profiles |
| PCT/US1999/003551 WO1999045567A1 (en) | 1998-03-03 | 1999-02-18 | Method and apparatus for predicting plasma-process surface profiles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69924834D1 DE69924834D1 (de) | 2005-05-25 |
| DE69924834T2 true DE69924834T2 (de) | 2006-02-23 |
Family
ID=21873691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69924834T Expired - Lifetime DE69924834T2 (de) | 1998-03-03 | 1999-02-18 | Verfahren und vorrichtung zur vorhersage von plasmaverfahren-oberflächenprofilen |
Country Status (8)
| Country | Link |
|---|---|
| US (6) | US6151532A (https=) |
| EP (1) | EP1060501B1 (https=) |
| JP (2) | JP4641619B2 (https=) |
| KR (1) | KR100582969B1 (https=) |
| AT (1) | ATE293840T1 (https=) |
| DE (1) | DE69924834T2 (https=) |
| TW (1) | TW452827B (https=) |
| WO (1) | WO1999045567A1 (https=) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6752584B2 (en) | 1996-07-15 | 2004-06-22 | Semitool, Inc. | Transfer devices for handling microelectronic workpieces within an environment of a processing machine and methods of manufacturing and using such devices in the processing of microelectronic workpieces |
| US6749390B2 (en) | 1997-12-15 | 2004-06-15 | Semitool, Inc. | Integrated tools with transfer devices for handling microelectronic workpieces |
| US6749391B2 (en) | 1996-07-15 | 2004-06-15 | Semitool, Inc. | Microelectronic workpiece transfer devices and methods of using such devices in the processing of microelectronic workpieces |
| US6921467B2 (en) * | 1996-07-15 | 2005-07-26 | Semitool, Inc. | Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces |
| US20090129992A1 (en) * | 1997-07-22 | 2009-05-21 | Blacklight Power, Inc. | Reactor for Preparing Hydrogen Compounds |
| US20090142257A1 (en) * | 1997-07-22 | 2009-06-04 | Blacklight Power, Inc. | Inorganic hydrogen compounds and applications thereof |
| JP2001511429A (ja) * | 1997-07-22 | 2001-08-14 | ブラック ライト パワー インコーポレイテッド | 無機水素化合物、分離方法及び燃料用途 |
| US6151532A (en) * | 1998-03-03 | 2000-11-21 | Lam Research Corporation | Method and apparatus for predicting plasma-process surface profiles |
| US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
| US6497801B1 (en) | 1998-07-10 | 2002-12-24 | Semitool Inc | Electroplating apparatus with segmented anode array |
| EP1194613A4 (en) | 1999-04-13 | 2006-08-23 | Semitool Inc | PROCESSOR OF PARTS HAVING IMPROVED TREATMENT FLUID FLOW PROCESSING CHAMBER |
| US7189318B2 (en) | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US7351315B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7264698B2 (en) | 1999-04-13 | 2007-09-04 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7160421B2 (en) | 1999-04-13 | 2007-01-09 | Semitool, Inc. | Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US7351314B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7438788B2 (en) | 1999-04-13 | 2008-10-21 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7020537B2 (en) * | 1999-04-13 | 2006-03-28 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US7585398B2 (en) | 1999-04-13 | 2009-09-08 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US6916412B2 (en) * | 1999-04-13 | 2005-07-12 | Semitool, Inc. | Adaptable electrochemical processing chamber |
| US6623609B2 (en) | 1999-07-12 | 2003-09-23 | Semitool, Inc. | Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same |
| US6546306B1 (en) * | 1999-08-11 | 2003-04-08 | Advanced Micro Devices, Inc. | Method for adjusting incoming film thickness uniformity such that variations across the film after polishing minimized |
| GB0007898D0 (en) * | 2000-03-31 | 2000-05-17 | British Telecomm | Apparatus for optimising configuration parameters of a network |
| US20020055193A1 (en) * | 2000-04-28 | 2002-05-09 | Trw, Inc. | Process perturbation to measured-modeled method for semiconductor device technology modeling |
| WO2001090434A2 (en) * | 2000-05-24 | 2001-11-29 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| JP2001351848A (ja) * | 2000-06-07 | 2001-12-21 | Tokyo Electron Ltd | 基板処理システム及び基板処理方法 |
| AU2001282879A1 (en) | 2000-07-08 | 2002-01-21 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
| US6618638B1 (en) * | 2001-04-30 | 2003-09-09 | Lam Research Corporation | Method for scaling processes between different etching chambers and wafer sizes |
| JP4506030B2 (ja) * | 2001-05-18 | 2010-07-21 | 東京エレクトロン株式会社 | 熱処理装置及び成膜方法 |
| JP2002343772A (ja) * | 2001-05-18 | 2002-11-29 | Speedfam Co Ltd | 局所プラズマエッチング方法 |
| JP3708031B2 (ja) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| US20030024900A1 (en) * | 2001-07-24 | 2003-02-06 | Tokyo Electron Limited | Variable aspect ratio plasma source |
| DE10136854A1 (de) * | 2001-07-27 | 2003-02-20 | Infineon Technologies Ag | Verfahren zur Bestimmung der relevanten Ionen- und Teilchenflüsse in i-PVD-Verfahren |
| US7090751B2 (en) | 2001-08-31 | 2006-08-15 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| AU2002365227A1 (en) * | 2001-11-14 | 2003-09-02 | Blacklight Power, Inc. | Hydrogen power, plasma, and reactor for lasing, and power conversion |
| US20030129117A1 (en) * | 2002-01-02 | 2003-07-10 | Mills Randell L. | Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
| US6630360B2 (en) | 2002-01-10 | 2003-10-07 | Advanced Micro Devices, Inc. | Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization |
| US20030159921A1 (en) * | 2002-02-22 | 2003-08-28 | Randy Harris | Apparatus with processing stations for manually and automatically processing microelectronic workpieces |
| US6991710B2 (en) | 2002-02-22 | 2006-01-31 | Semitool, Inc. | Apparatus for manually and automatically processing microelectronic workpieces |
| US6750447B2 (en) * | 2002-04-12 | 2004-06-15 | Agere Systems, Inc. | Calibration standard for high resolution electron microscopy |
| US6893505B2 (en) * | 2002-05-08 | 2005-05-17 | Semitool, Inc. | Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids |
| US20030209518A1 (en) * | 2002-05-08 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of detecting abnormal chamber conditions in etcher |
| CN1653598B (zh) * | 2002-05-16 | 2010-05-05 | 东京毅力科创株式会社 | 处理装置状态或处理结果的预测方法 |
| US7797073B1 (en) * | 2002-05-28 | 2010-09-14 | Advanced Micro Devices, Inc. | Controlling processing of semiconductor wafers based upon end of line parameters |
| JP4995419B2 (ja) * | 2002-06-28 | 2012-08-08 | 東京エレクトロン株式会社 | 材料プロセスツール及びパフォーマンスデータを用いてプロセスを制御する方法及びシステム |
| US7114903B2 (en) | 2002-07-16 | 2006-10-03 | Semitool, Inc. | Apparatuses and method for transferring and/or pre-processing microelectronic workpieces |
| US7910013B2 (en) * | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| US7901952B2 (en) | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
| US7470626B2 (en) | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7452824B2 (en) | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
| US7795153B2 (en) | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
| US7188033B2 (en) * | 2003-07-21 | 2007-03-06 | Blacklight Power Incorporated | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions |
| GB2422718A (en) | 2003-10-24 | 2006-08-02 | Blacklight Power Inc | Novel molecular hydrogen gas laser |
| AU2005204618A1 (en) * | 2004-01-05 | 2005-07-28 | Blacklight Power, Inc. | Method and system of computing and rendering the nature of atoms and atomic ions |
| JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| DE102004020466A1 (de) * | 2004-04-26 | 2005-11-17 | Applied Films Gmbh & Co. Kg | Verfahren zum Beschichten von Substraten in Inline-Anlagen |
| US7689367B2 (en) * | 2004-05-17 | 2010-03-30 | Blacklight Power, Inc. | Method and system of computing and rendering the nature of the excited electronic states of atoms and atomic ions |
| US7571078B2 (en) * | 2004-05-20 | 2009-08-04 | Sap Ag | Time dependent process parameters for integrated process and product engineering |
| US20070198199A1 (en) * | 2004-07-19 | 2007-08-23 | Mills Randell L | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions |
| TWI367429B (en) * | 2004-09-01 | 2012-07-01 | Lam Res Corp | A plasma chamber utilizing an enhanced process and profile simulator algorithms and a method for operating the same |
| JP4745035B2 (ja) * | 2005-11-24 | 2011-08-10 | 株式会社東芝 | シミュレーション装置、シミュレーションプログラムおよびシミュレーション方法 |
| US20080304522A1 (en) * | 2006-04-04 | 2008-12-11 | Mills Randell L | Catalyst laser |
| EP1988185A1 (de) * | 2007-04-25 | 2008-11-05 | Sulzer Metco AG | Computergestütztes Verfahren zum Einstellen partikelspezifischer Parameter in einem thermischen Spritzprozess |
| JP4555881B2 (ja) * | 2008-03-18 | 2010-10-06 | 株式会社日立国際電気 | 基板処理装置及び表示方法 |
| US7895547B2 (en) * | 2008-05-01 | 2011-02-22 | International Business Machines Corporation | Test pattern based process model calibration |
| US8103492B2 (en) * | 2008-09-05 | 2012-01-24 | Tokyo Electron Limited | Plasma fluid modeling with transient to stochastic transformation |
| JP5428450B2 (ja) * | 2009-03-30 | 2014-02-26 | ソニー株式会社 | イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法 |
| US8160728B2 (en) * | 2009-09-14 | 2012-04-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Methods of determining complete sensor requirements for autonomous mobility |
| JP5825492B2 (ja) * | 2010-03-16 | 2015-12-02 | みずほ情報総研株式会社 | プラズマプロセスによる加工形状の予測システム、方法及びプログラム |
| US8472278B2 (en) | 2010-04-09 | 2013-06-25 | Qualcomm Incorporated | Circuits, systems and methods for adjusting clock signals based on measured performance characteristics |
| JP5872141B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | 基板処理装置、その制御装置およびその制御方法 |
| JP5732843B2 (ja) * | 2010-12-21 | 2015-06-10 | ソニー株式会社 | シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム |
| JP5685762B2 (ja) * | 2011-03-07 | 2015-03-18 | みずほ情報総研株式会社 | プラズマ加工形状シミュレーション装置及びプログラム |
| US8501499B2 (en) * | 2011-03-28 | 2013-08-06 | Tokyo Electron Limited | Adaptive recipe selector |
| DE102013004116A1 (de) * | 2013-03-08 | 2014-09-11 | Johann Wolfgang Goethe-Universität | Verfahren zum Optimieren eines Abscheidungsprozesses, Verfahren zum Einstellen einer Depositionsanlage und Depositionsanlage |
| CN104462711B (zh) * | 2014-12-22 | 2017-10-10 | 东南大学 | 表面活性剂作用下的单晶硅全晶面刻蚀速率的获取方法 |
| US9727672B2 (en) * | 2015-02-26 | 2017-08-08 | Uchicago Argonne, Llc | Fast method for reactor and feature scale coupling in ALD and CVD |
| US10386828B2 (en) | 2015-12-17 | 2019-08-20 | Lam Research Corporation | Methods and apparatuses for etch profile matching by surface kinetic model optimization |
| US9792393B2 (en) | 2016-02-08 | 2017-10-17 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
| US10032681B2 (en) | 2016-03-02 | 2018-07-24 | Lam Research Corporation | Etch metric sensitivity for endpoint detection |
| US10197908B2 (en) * | 2016-06-21 | 2019-02-05 | Lam Research Corporation | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
| US10254641B2 (en) | 2016-12-01 | 2019-04-09 | Lam Research Corporation | Layout pattern proximity correction through fast edge placement error prediction |
| US10534257B2 (en) | 2017-05-01 | 2020-01-14 | Lam Research Corporation | Layout pattern proximity correction through edge placement error prediction |
| JP6914211B2 (ja) | 2018-01-30 | 2021-08-04 | 株式会社日立ハイテク | プラズマ処理装置及び状態予測装置 |
| WO2019155928A1 (ja) | 2018-02-08 | 2019-08-15 | 東京エレクトロン株式会社 | 情報処理装置、プログラム、プロセス処理実行装置及び情報処理システム |
| US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
| WO2019199697A1 (en) | 2018-04-10 | 2019-10-17 | Lam Research Corporation | Resist and etch modeling |
| US11921433B2 (en) | 2018-04-10 | 2024-03-05 | Lam Research Corporation | Optical metrology in machine learning to characterize features |
| US10977405B2 (en) | 2019-01-29 | 2021-04-13 | Lam Research Corporation | Fill process optimization using feature scale modeling |
| WO2020234617A1 (en) * | 2019-05-22 | 2020-11-26 | Biomerieux | Methods and systems for manufacturing a production assay reactor |
| CN116137927A (zh) * | 2020-07-28 | 2023-05-19 | 朗姆研究公司 | 沉积工艺的计算表示 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663513A (en) * | 1985-11-26 | 1987-05-05 | Spectra-Physics, Inc. | Method and apparatus for monitoring laser processes |
| DE3936541C2 (de) * | 1988-11-02 | 1998-05-20 | Ricoh Kk | Verfahren zum Messen von mindestens zwei unbekannten physikalischen Größen einer einlagigen Dünnschicht oder der obersten Lage einer mehrlagigen Dünnschicht-Struktur |
| JPH03171301A (ja) * | 1989-11-30 | 1991-07-24 | Toshiba Corp | 物質の合成制御システム |
| DE4011933C2 (de) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
| JPH07122142B2 (ja) * | 1990-12-25 | 1995-12-25 | 中外炉工業株式会社 | シートプラズマｃｖｄ装置 |
| US5270222A (en) * | 1990-12-31 | 1993-12-14 | Texas Instruments Incorporated | Method and apparatus for semiconductor device fabrication diagnosis and prognosis |
| US5290382A (en) | 1991-12-13 | 1994-03-01 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
| US5225740A (en) * | 1992-03-26 | 1993-07-06 | General Atomics | Method and apparatus for producing high density plasma using whistler mode excitation |
| JPH06196405A (ja) * | 1992-11-17 | 1994-07-15 | Ricoh Co Ltd | 薄膜堆積形状予測方法 |
| EP0602855A1 (en) * | 1992-12-14 | 1994-06-22 | AT&T Corp. | Active neural network control of wafer attributes in a plasma etch process |
| US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| US5642296A (en) * | 1993-07-29 | 1997-06-24 | Texas Instruments Incorporated | Method of diagnosing malfunctions in semiconductor manufacturing equipment |
| US5737496A (en) * | 1993-11-17 | 1998-04-07 | Lucent Technologies Inc. | Active neural network control of wafer attributes in a plasma etch process |
| SE9304246L (sv) * | 1993-12-22 | 1995-06-23 | Asea Brown Boveri | Förfarande vid övervakning av multivariata processer |
| US5869402A (en) * | 1994-06-13 | 1999-02-09 | Matsushita Electric Industrial Co., Ltd. | Plasma generating and processing method and apparatus thereof |
| JPH0855145A (ja) * | 1994-08-08 | 1996-02-27 | Fujitsu Ltd | 半導体プロセスシミュレーション方法及びそのための装置 |
| DE4445762A1 (de) * | 1994-12-21 | 1996-06-27 | Adolf Slaby Inst Forschungsges | Verfahren und Vorrichtung zum Bestimmen absoluter Plasmaparameter |
| US5711843A (en) * | 1995-02-21 | 1998-01-27 | Orincon Technologies, Inc. | System for indirectly monitoring and controlling a process with particular application to plasma processes |
| US5679599A (en) * | 1995-06-22 | 1997-10-21 | Advanced Micro Devices, Inc. | Isolation using self-aligned trench formation and conventional LOCOS |
| JPH0981610A (ja) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | シミュレーション方法及びその装置 |
| US5654903A (en) * | 1995-11-07 | 1997-08-05 | Lucent Technologies Inc. | Method and apparatus for real time monitoring of wafer attributes in a plasma etch process |
| US5719796A (en) * | 1995-12-04 | 1998-02-17 | Advanced Micro Devices, Inc. | System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback |
| US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
| US6110214A (en) * | 1996-05-03 | 2000-08-29 | Aspen Technology, Inc. | Analyzer for modeling and optimizing maintenance operations |
| US5933345A (en) * | 1996-05-06 | 1999-08-03 | Pavilion Technologies, Inc. | Method and apparatus for dynamic and steady state modeling over a desired path between two end points |
| JPH1091207A (ja) * | 1996-09-13 | 1998-04-10 | Fujitsu Ltd | 内部表現自動生成方法及び装置 |
| US5966527A (en) * | 1996-10-28 | 1999-10-12 | Advanced Micro Devices, Inc. | Apparatus, article of manufacture, method and system for simulating a mass-produced semiconductor device behavior |
| US6041734A (en) * | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
| US6136388A (en) * | 1997-12-01 | 2000-10-24 | Applied Materials, Inc. | Substrate processing chamber with tunable impedance |
| US5866437A (en) * | 1997-12-05 | 1999-02-02 | Advanced Micro Devices, Inc. | Dynamic process window control using simulated wet data from current and previous layer data |
| US5900633A (en) * | 1997-12-15 | 1999-05-04 | On-Line Technologies, Inc | Spectrometric method for analysis of film thickness and composition on a patterned sample |
| US6151532A (en) * | 1998-03-03 | 2000-11-21 | Lam Research Corporation | Method and apparatus for predicting plasma-process surface profiles |
| US7137354B2 (en) | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
| US6830650B2 (en) | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
-
1998
- 1998-03-03 US US09/033,997 patent/US6151532A/en not_active Expired - Lifetime
-
1999
- 1999-02-18 DE DE69924834T patent/DE69924834T2/de not_active Expired - Lifetime
- 1999-02-18 AT AT99907143T patent/ATE293840T1/de not_active IP Right Cessation
- 1999-02-18 KR KR1020007009723A patent/KR100582969B1/ko not_active Expired - Lifetime
- 1999-02-18 WO PCT/US1999/003551 patent/WO1999045567A1/en not_active Ceased
- 1999-02-18 JP JP2000535027A patent/JP4641619B2/ja not_active Expired - Fee Related
- 1999-02-18 EP EP99907143A patent/EP1060501B1/en not_active Expired - Lifetime
- 1999-03-26 TW TW088103151A patent/TW452827B/zh active
-
2000
- 2000-06-30 US US09/609,593 patent/US6804572B1/en not_active Expired - Lifetime
- 2000-06-30 US US09/608,163 patent/US6577915B1/en not_active Expired - Lifetime
- 2000-06-30 US US09/607,882 patent/US6301510B1/en not_active Ceased
-
2002
- 2002-11-22 US US10/302,567 patent/USRE39534E1/en not_active Expired - Lifetime
-
2004
- 2004-09-01 US US10/932,926 patent/US7139632B2/en not_active Expired - Fee Related
-
2010
- 2010-07-09 JP JP2010156714A patent/JP2010282636A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP4641619B2 (ja) | 2011-03-02 |
| TW452827B (en) | 2001-09-01 |
| WO1999045567A1 (en) | 1999-09-10 |
| KR20010041543A (ko) | 2001-05-25 |
| US7139632B2 (en) | 2006-11-21 |
| DE69924834D1 (de) | 2005-05-25 |
| KR100582969B1 (ko) | 2006-05-24 |
| JP2010282636A (ja) | 2010-12-16 |
| US6577915B1 (en) | 2003-06-10 |
| EP1060501B1 (en) | 2005-04-20 |
| US6301510B1 (en) | 2001-10-09 |
| US20050278057A1 (en) | 2005-12-15 |
| US6804572B1 (en) | 2004-10-12 |
| US6151532A (en) | 2000-11-21 |
| JP2003524701A (ja) | 2003-08-19 |
| ATE293840T1 (de) | 2005-05-15 |
| USRE39534E1 (en) | 2007-03-27 |
| EP1060501A1 (en) | 2000-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69924834T2 (de) | Verfahren und vorrichtung zur vorhersage von plasmaverfahren-oberflächenprofilen | |
| DE69231420T2 (de) | Dynamischer systemanalysator | |
| DE60219376T2 (de) | System zur adaptiven Plasma-Charakterisierung | |
| DE69708882T2 (de) | Überwachung der dicke | |
| DE102010026616A1 (de) | Verfahren und Vorrichtung zum Kompensieren von erstprinzipienbasierten Simulationsmodellen | |
| DE112020004837T5 (de) | Werkzeugsteuerung mit mehrstufigem lstm zur vorhersage von on-wafer-messungen | |
| Donsa et al. | Nonequilibrium correlation dynamics in the one-dimensional Fermi-Hubbard model: A testbed for the two-particle reduced density matrix theory | |
| Cong | On almost sure stability conditions of linear switching stochastic differential systems | |
| DE112005001600T5 (de) | Simulation von Abtaststrahlbildern durch Kombination von aus einem Oberflächenmodell extrahierten Grundmerkmalen | |
| Herz et al. | Existence and uniqueness of a global weak solution of a Darcy‐Nernst‐Planck‐Poisson system | |
| Pausch et al. | How to seed ergodic dynamics of interacting bosons under conditions of many-body quantum chaos | |
| DE10222700A1 (de) | Optimierungsverfahren mit validierten Approximationsmodellen | |
| DE19602125C2 (de) | Schaltungssimulationsverfahren zur rechnergestützten Bestimmung des Einschwingverhaltens einer Quarzresonatorschaltung | |
| DE112023002484T5 (de) | Informationsverarbeitungsvorrichtung, Informationsverarbeitungsverfahren und nicht-transitorisches computerlesbares Medium | |
| DE102023211154A1 (de) | Vorrichtung und Verfahren zur 3D-Tensor-Vervollständigung | |
| DE102019005748A1 (de) | Vorrichtung für die einstellung einer bearbeitungsbedingung undmaschinelle lernvorrichtung | |
| DE602004002270T2 (de) | Abschätzung eines irreversiblen Alterungsprozesses | |
| DE102005004568A1 (de) | Verfahren zur Berücksichtigung von Messwerten von kalibrierten Sensoren in einme Kalmanfilter | |
| Huthmacher et al. | Monte Carlo simulation of electron dynamics in liquid water | |
| EP3796108A1 (de) | Vorrichtung und verfahren zum ermitteln eines robusten optimums eines physikalischen oder chemischen prozesses gemäss einem bayes optimierungsverfahren | |
| Azam et al. | Bayesian inference for a semi-parametric copula-based Markov chain | |
| Brommer | Development and test of interaction potentials for complex metallic alloys | |
| DE102022207075A1 (de) | Verfahren und Vorrichtung zur Produktionsprozessoptimierung anhand ermittelter Korrelationen zwischen ersten und zweiten Messungen aus Produktionsprozessen | |
| Mevenkamp et al. | On a hyperbolic conservation law of electron transport in solid materials for electron probe microanalysis | |
| EP0992886A2 (de) | Verfahren und Vorrichtung zum Bestimmen der Energie eines Signals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |