DE69912564T2 - Siliziumkarbid-Verbundwerkstoff, Verfahren zu seiner Herstellung und Wärmeableitungsanordnung, die diesen verwendet - Google Patents

Siliziumkarbid-Verbundwerkstoff, Verfahren zu seiner Herstellung und Wärmeableitungsanordnung, die diesen verwendet Download PDF

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Publication number
DE69912564T2
DE69912564T2 DE1999612564 DE69912564T DE69912564T2 DE 69912564 T2 DE69912564 T2 DE 69912564T2 DE 1999612564 DE1999612564 DE 1999612564 DE 69912564 T DE69912564 T DE 69912564T DE 69912564 T2 DE69912564 T2 DE 69912564T2
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DE
Germany
Prior art keywords
composite
silicon carbide
flat
heat dissipation
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1999612564
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German (de)
English (en)
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DE69912564D1 (de
Inventor
Hideki Machida-shi Hirotsuru
Kenji Machida-shi Nomura
Ryuichi Machida-shi Terasaki
Mitsuaki Machida-shi Saito
Kazuyuki Machida-shi Hiruta
Akira Machida-shi Miyai
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Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
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Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
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Publication of DE69912564T2 publication Critical patent/DE69912564T2/de
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/515—Other specific metals
    • C04B41/5155—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y10T428/249956—Void-containing component is inorganic
    • Y10T428/249957—Inorganic impregnant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971—Preformed hollow element-containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971—Preformed hollow element-containing
    • Y10T428/249974—Metal- or silicon-containing element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y10T428/24998—Composite has more than two layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249986—Void-containing component contains also a solid fiber or solid particle
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
DE1999612564 1998-11-12 1999-11-10 Siliziumkarbid-Verbundwerkstoff, Verfahren zu seiner Herstellung und Wärmeableitungsanordnung, die diesen verwendet Expired - Lifetime DE69912564T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP32205498 1998-11-12
JP32205498 1998-11-12
JP36048298 1998-12-18
JP36048298 1998-12-18
JP28542999A JP3468358B2 (ja) 1998-11-12 1999-10-06 炭化珪素質複合体及びその製造方法とそれを用いた放熱部品
JP28542999 1999-10-06

Publications (2)

Publication Number Publication Date
DE69912564D1 DE69912564D1 (de) 2003-12-11
DE69912564T2 true DE69912564T2 (de) 2004-05-13

Family

ID=27337174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1999612564 Expired - Lifetime DE69912564T2 (de) 1998-11-12 1999-11-10 Siliziumkarbid-Verbundwerkstoff, Verfahren zu seiner Herstellung und Wärmeableitungsanordnung, die diesen verwendet

Country Status (6)

Country Link
US (1) US6447894B1 (ko)
EP (1) EP1000915B1 (ko)
JP (1) JP3468358B2 (ko)
KR (1) KR100637635B1 (ko)
AT (1) ATE253537T1 (ko)
DE (1) DE69912564T2 (ko)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980262B2 (ja) * 2000-10-31 2007-09-26 日本碍子株式会社 ＳｉＣ質熱処理用治具
WO2002067324A1 (fr) 2001-02-22 2002-08-29 Ngk Insulators, Ltd. Element pour circuit electronique, procede de fabrication d'un tel element et portion electronique
JP2003034587A (ja) * 2001-07-25 2003-02-07 Ryoka Macs Corp 炭素基複合材料及び塑性加工性改良方法
GB2395360B (en) * 2001-10-26 2005-03-16 Ngk Insulators Ltd Heat sink material
JP2003201528A (ja) 2001-10-26 2003-07-18 Ngk Insulators Ltd ヒートシンク材
KR100541729B1 (ko) * 2003-06-23 2006-01-10 삼성전자주식회사 반도체소자 검사장치
US20050049350A1 (en) * 2003-08-25 2005-03-03 Sandeep Tonapi Thin bond-line silicone adhesive composition and method for preparing the same
JP4543279B2 (ja) * 2004-03-31 2010-09-15 Ｄｏｗａメタルテック株式会社 アルミニウム接合部材の製造方法
KR100562280B1 (ko) * 2004-06-15 2006-03-23 주식회사모나미 필기구
US7838107B2 (en) 2004-09-14 2010-11-23 Denki Kagaku Kogyo Kabushiki Kaisha Aluminum-silicon carbide composite
US7622803B2 (en) * 2005-08-30 2009-11-24 Cree, Inc. Heat sink assembly and related methods for semiconductor vacuum processing systems
KR20080077094A (ko) * 2006-01-13 2008-08-21 덴끼 가가꾸 고교 가부시키가이샤 알루미늄-탄화규소질 복합체 및 그것을 사용한 방열 부품
WO2007125878A1 (ja) * 2006-04-26 2007-11-08 Denki Kagaku Kogyo Kabushiki Kaisha アルミニウム－炭化珪素質複合体及びそれを用いた放熱部品
US20090075056A1 (en) * 2006-05-09 2009-03-19 Denki Kagaku Kogyo Kabushiki Kaisha Aluminum-silicon carbide composite body and method for processing the same
JP4732430B2 (ja) * 2007-12-19 2011-07-27 電気化学工業株式会社 アルミニウム−セラミックス複合体及びその製造方法
WO2010007974A1 (ja) * 2008-07-17 2010-01-21 電気化学工業株式会社 アルミニウム－ダイヤモンド系複合体の製造方法
CN103394668A (zh) * 2008-10-03 2013-11-20 住友电气工业株式会社 复合构件
US8883564B2 (en) 2009-02-12 2014-11-11 Denki Kagaku Kogyo Kabushiki Kaisha Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and LED luminescent member
KR20160129920A (ko) * 2009-02-13 2016-11-09 덴카 주식회사 Ｌｅｄ 발광소자용 복합재료 기판, 그 제조 방법 및 ｌｅｄ 발광소자
JPWO2011007874A1 (ja) 2009-07-17 2012-12-27 電気化学工業株式会社 Ｌｅｄチップ接合体、ｌｅｄパッケージ、及びｌｅｄパッケージの製造方法
CN102484188B (zh) * 2009-07-31 2015-02-18 电气化学工业株式会社 Led搭载用晶片及其制造方法、以及使用该晶片的led搭载结构体
JP5739873B2 (ja) * 2010-04-02 2015-06-24 住友電気工業株式会社 マグネシウム基複合部材、放熱部材、および半導体装置
JP2012119671A (ja) * 2010-11-11 2012-06-21 Kitagawa Ind Co Ltd 電子回路及びヒートシンク
JP5662834B2 (ja) * 2011-02-22 2015-02-04 電気化学工業株式会社 アルミニウム−炭化珪素質複合体の製造方法
CN102306694A (zh) * 2011-05-24 2012-01-04 常州碳元科技发展有限公司 用于led封装的嵌套散热支架、led灯及制造方法
JP2013237597A (ja) * 2012-05-17 2013-11-28 Hitachi Metals Ltd プリフォーム、それを用いた金属−セラミックス複合材及びその製造方法
CN103433491B (zh) * 2013-09-18 2015-05-13 湖南航天工业总公司 一种碳化硅igbt基板骨架真空压力渗铝装置及双面覆铝方法
US20170162469A1 (en) * 2014-02-03 2017-06-08 Denka Company Limited Silicon carbide complex, method for manufacturing same, and heat dissipation component using same
WO2015141729A1 (ja) 2014-03-18 2015-09-24 電気化学工業株式会社 アルミニウム－炭化珪素質複合体及びパワーモジュール用ベース板
KR101512765B1 (ko) * 2014-04-07 2015-04-16 주식회사 티앤머티리얼스 알루미늄 탄화규소질 복합체 성형장치 및 이를 이용한 제조방법
WO2016002943A1 (ja) 2014-07-04 2016-01-07 電気化学工業株式会社 放熱部品及びその製造方法
CN106715004B (zh) 2014-07-24 2019-09-24 电化株式会社 复合体及其制造方法
KR101579912B1 (ko) * 2015-05-28 2015-12-28 주식회사 가남 그라파이트-알루미늄 복합체의 제조방법 및 이의 용도
KR101688880B1 (ko) 2016-03-08 2016-12-23 주식회사 가남 태양광 인버터용 고효율 방열소재 및 이의 제조방법
CN110366777B (zh) 2017-03-29 2024-04-26 三菱综合材料株式会社 带散热片的绝缘电路基板的制造方法
JP6911805B2 (ja) 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
JP7216094B2 (ja) * 2018-07-13 2023-01-31 デンカ株式会社 金属－炭化珪素質複合体、及び金属－炭化珪素質複合体の製造方法
JP6996008B2 (ja) 2018-11-29 2022-01-17 デンカ株式会社 放熱部材
KR102234171B1 (ko) 2019-12-31 2021-03-31 (주)삼양컴텍 저저항 실리콘카바이드계 복합체의 제조방법
KR102124766B1 (ko) 2019-12-31 2020-06-19 (주)삼양컴텍 플라즈마 처리 장치 및 그 제조방법
JP7186929B1 (ja) * 2021-01-12 2022-12-09 デンカ株式会社 積層体、及びその製造方法、並びに、パワーモジュール
CN112919923B (zh) * 2021-01-21 2022-07-12 周煜 金属基复合材料及其制备方法和应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390220A (en) * 1981-04-02 1983-06-28 Burroughs Corporation Electrical connector assembly for an integrated circuit package
JPS59199587A (ja) * 1983-04-26 1984-11-12 住友電気工業株式会社 高熱伝導性基板およびその製造方法
US5004035A (en) * 1988-11-10 1991-04-02 Lanxide Technology Company, Lp Method of thermo-forming a novel metal matrix composite body and products produced therefrom
DE3940933C2 (de) 1989-12-12 1996-08-01 Eupec Gmbh & Co Kg Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens
JPH0497976A (ja) * 1990-08-13 1992-03-30 Eagle Ind Co Ltd 炭化珪素系複合体およびその製造方法
JPH06145840A (ja) * 1991-03-29 1994-05-27 Osaka Cement Co Ltd 三次元の炭化ケイ素骨格をもつアルミニウム系複合材料
US5259436A (en) * 1991-04-08 1993-11-09 Aluminum Company Of America Fabrication of metal matrix composites by vacuum die casting
US5775403A (en) * 1991-04-08 1998-07-07 Aluminum Company Of America Incorporating partially sintered preforms in metal matrix composites
JP3154846B2 (ja) * 1992-12-11 2001-04-09 電気化学工業株式会社 金属ベース回路基板及びその製造方法
US5465481A (en) * 1993-10-04 1995-11-14 Motorola, Inc. Method for fabricating a semiconductor package
DE4338107C1 (de) 1993-11-08 1995-03-09 Eupec Gmbh & Co Kg Halbleiter-Modul
JPH08204071A (ja) 1995-01-27 1996-08-09 Toshiba Corp 半導体装置
JP3180677B2 (ja) 1996-08-22 2001-06-25 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JPH11130568A (ja) 1997-10-24 1999-05-18 Denki Kagaku Kogyo Kk 複合体とそれを用いたヒートシンク
JPH11157964A (ja) * 1997-11-26 1999-06-15 Denki Kagaku Kogyo Kk 板状複合体とそれを用いた放熱部品
DE19840583A1 (de) * 1998-09-05 2000-03-09 Bayer Ag Mikrokapsel-Formulierungen
KR100368789B1 (ko) * 2000-02-07 2003-01-24 한국과학기술연구원 전계흡수형 소자의 단면 반사율 측정 방법

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ATE253537T1 (de) 2003-11-15
EP1000915A2 (en) 2000-05-17
JP2000281468A (ja) 2000-10-10
EP1000915B1 (en) 2003-11-05
DE69912564D1 (de) 2003-12-11
KR20000035298A (ko) 2000-06-26
JP3468358B2 (ja) 2003-11-17

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