DE69909524T2 - Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen - Google Patents

Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen

Info

Publication number
DE69909524T2
DE69909524T2 DE69909524T DE69909524T DE69909524T2 DE 69909524 T2 DE69909524 T2 DE 69909524T2 DE 69909524 T DE69909524 T DE 69909524T DE 69909524 T DE69909524 T DE 69909524T DE 69909524 T2 DE69909524 T2 DE 69909524T2
Authority
DE
Germany
Prior art keywords
devices
circuit
integrated circuits
mixed signals
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69909524T
Other languages
English (en)
Other versions
DE69909524D1 (de
Inventor
Ian Juso Dedic
William George John Schofield
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Electronics Europe GmbH
Original Assignee
Fujitsu Electronics Europe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Electronics Europe GmbH filed Critical Fujitsu Electronics Europe GmbH
Application granted granted Critical
Publication of DE69909524D1 publication Critical patent/DE69909524D1/de
Publication of DE69909524T2 publication Critical patent/DE69909524T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/10—Distribution of clock signals, e.g. skew
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • H03M1/0836—Continuously compensating for, or preventing, undesired influence of physical parameters of noise of phase error, e.g. jitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • H03M1/0863—Continuously compensating for, or preventing, undesired influence of physical parameters of noise of switching transients, e.g. glitches
    • H03M1/0872—Continuously compensating for, or preventing, undesired influence of physical parameters of noise of switching transients, e.g. glitches by disabling changes in the output during the transitions, e.g. by holding or latching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/742—Simultaneous conversion using current sources as quantisation value generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analogue/Digital Conversion (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69909524T 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen Expired - Lifetime DE69909524T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9804587A GB2335097B (en) 1998-03-04 1998-03-04 Mixed-signal circuitry and integrated circuit devices

Publications (2)

Publication Number Publication Date
DE69909524D1 DE69909524D1 (de) 2003-08-14
DE69909524T2 true DE69909524T2 (de) 2003-12-24

Family

ID=10827961

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69909524T Expired - Lifetime DE69909524T2 (de) 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen
DE69903868T Expired - Lifetime DE69903868T2 (de) 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen
DE69909523T Expired - Lifetime DE69909523T2 (de) 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte integrierter Schaltungen

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69903868T Expired - Lifetime DE69903868T2 (de) 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen
DE69909523T Expired - Lifetime DE69909523T2 (de) 1998-03-04 1999-01-06 Schaltung mit gemischten Signalen und Geräte integrierter Schaltungen

Country Status (5)

Country Link
US (1) US6320527B1 (de)
EP (3) EP1152539B1 (de)
JP (1) JP4101964B2 (de)
DE (3) DE69909524T2 (de)
GB (3) GB2335097B (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR9909351A (pt) * 1998-04-03 2000-12-12 Colgate Palmolive Co Composição cosmética
US6573565B2 (en) * 1999-07-28 2003-06-03 International Business Machines Corporation Method and structure for providing improved thermal conduction for silicon semiconductor devices
GB2356301B (en) * 1999-11-10 2003-09-10 Fujitsu Ltd Data multiplexing in mixed-signal circuitry
GB2356750B (en) 1999-11-24 2002-12-04 Fujitsu Ltd Reducing jitter in mixed-signal circuitry
GB2373654B (en) 2001-03-21 2005-02-09 Fujitsu Ltd Reducing jitter in mixed-signal integrated circuit devices
GB2390945B (en) * 2001-08-24 2004-03-10 Fujitsu Ltd Switching circuitry
JP3928781B2 (ja) * 2002-03-05 2007-06-13 フリースケール セミコンダクター インコーポレイテッド デジタル・アナログ変換器の入力コードに対するセル選択方法
US7339822B2 (en) 2002-12-06 2008-03-04 Sandisk Corporation Current-limited latch
US6842132B2 (en) * 2003-01-24 2005-01-11 Analog Devices, Inc. Constant switching for signal processing
JP4190311B2 (ja) * 2003-03-10 2008-12-03 三菱電機株式会社 半導体装置
US7088091B2 (en) * 2003-08-14 2006-08-08 Intel Corporation Testing a multi-channel device
JP2006032688A (ja) * 2004-07-16 2006-02-02 Fujitsu Ltd 固体撮像装置
US6992609B1 (en) * 2004-09-17 2006-01-31 Pulselink, Inc. Digital to analog converter
JP2006156684A (ja) * 2004-11-29 2006-06-15 Toyota Industries Corp ラジオ用半導体装置の回路ブロックへの電源供給方法及びラジオ用半導体装置
TW200701760A (en) * 2005-02-15 2007-01-01 Niigata Seimitsu Co Ltd Semiconductor device
KR100755662B1 (ko) * 2005-06-23 2007-09-05 삼성전자주식회사 반도체 집적 회로 소자 및 그 제조 방법
EP2286313B1 (de) * 2008-05-27 2018-06-20 QUALCOMM Incorporated Energiesparschaltung mit taktpuffer und mehreren bistabilen kippschaltungen
JP2009290455A (ja) * 2008-05-28 2009-12-10 Toshiba Corp Ｄｅｍシステム、デルタシグマａ／ｄ変換器、及び受信機
US8766830B2 (en) 2010-04-29 2014-07-01 Agilent Technologies, Inc. Digital waveform synthesizer for NMR phase control

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567463A (en) * 1982-02-23 1986-01-28 Burr-Brown Corporation Circuit for improving the performance of digital to analog converters
JP2689114B2 (ja) * 1987-05-30 1997-12-10 株式会社リコー 半導体集積回路装置の製造方法
KR0150206B1 (ko) * 1989-02-21 1998-12-15 오가 노리오 디지탈/아날로그 변환기
JP2954242B2 (ja) * 1989-09-20 1999-09-27 株式会社日立製作所 集積回路装置
US5140327A (en) * 1989-09-21 1992-08-18 Xerox Corporation Analog to digital converter utilizing a semiconductor capicitor array
US5017918A (en) * 1990-03-26 1991-05-21 Burr-Brown Corporation Method and circuit for eliminating major bit transition error at the bipolar zero point in a digital-to-analog converter
JP2943005B2 (ja) * 1990-07-20 1999-08-30 松下電器産業株式会社 クロック再生回路
JPH04162830A (ja) * 1990-10-26 1992-06-08 Nec Corp Ｄ／ａコンバータ
JPH05152438A (ja) * 1991-11-26 1993-06-18 Nec Corp 半導体集積回路装置の形成方法
JPH0677830A (ja) * 1992-08-25 1994-03-18 Matsushita Electric Ind Co Ltd 比較器およびそれを用いたａ／ｄ変換器
JP3251735B2 (ja) * 1992-09-25 2002-01-28 株式会社東芝 半導体集積回路装置
JPH06326260A (ja) * 1993-05-13 1994-11-25 Nec Corp 半導体装置
JPH08149011A (ja) * 1994-11-18 1996-06-07 Mitsubishi Electric Corp 電流加算型ディジタル／アナログ変換器
US5974578A (en) * 1996-08-06 1999-10-26 Matsushita Electronics Corporation Integrated circuit and test method therefor

Also Published As

Publication number Publication date
JPH11317667A (ja) 1999-11-16
EP0940923A3 (de) 2000-08-02
EP1152538B1 (de) 2003-07-09
GB9804587D0 (en) 1998-04-29
DE69909523T2 (de) 2003-12-24
GB2335097B (en) 2002-02-13
EP1152538A1 (de) 2001-11-07
GB2364837A (en) 2002-02-06
GB2364838B (en) 2002-03-20
US6320527B1 (en) 2001-11-20
DE69909523D1 (de) 2003-08-14
GB2364837B (en) 2002-03-20
JP4101964B2 (ja) 2008-06-18
EP0940923B1 (de) 2002-11-13
EP1152539A1 (de) 2001-11-07
GB2364838A (en) 2002-02-06
GB0125328D0 (en) 2001-12-12
DE69909524D1 (de) 2003-08-14
EP1152539B1 (de) 2003-07-09
DE69903868T2 (de) 2003-08-28
EP0940923A2 (de) 1999-09-08
DE69903868D1 (de) 2002-12-19
GB2335097A (en) 1999-09-08
GB0125327D0 (en) 2001-12-12

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