DE69906082T2 - Beheizen eines substratträgers in einem substratbehandlungsraum - Google Patents

Beheizen eines substratträgers in einem substratbehandlungsraum Download PDF

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Publication number
DE69906082T2
DE69906082T2 DE69906082T DE69906082T DE69906082T2 DE 69906082 T2 DE69906082 T2 DE 69906082T2 DE 69906082 T DE69906082 T DE 69906082T DE 69906082 T DE69906082 T DE 69906082T DE 69906082 T2 DE69906082 T2 DE 69906082T2
Authority
DE
Germany
Prior art keywords
heating
heating element
temperature
value
heating elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69906082T
Other languages
German (de)
English (en)
Other versions
DE69906082D1 (de
Inventor
Emanuel Beer
Duoyan Shen
Eitan Zohar
M. Marc KOLLRACK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AKT Inc
Original Assignee
AKT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AKT Inc filed Critical AKT Inc
Application granted granted Critical
Publication of DE69906082D1 publication Critical patent/DE69906082D1/de
Publication of DE69906082T2 publication Critical patent/DE69906082T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
DE69906082T 1998-07-13 1999-07-13 Beheizen eines substratträgers in einem substratbehandlungsraum Expired - Fee Related DE69906082T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/115,112 US6225601B1 (en) 1998-07-13 1998-07-13 Heating a substrate support in a substrate handling chamber
US115112 1998-07-13
PCT/US1999/015852 WO2000002824A1 (en) 1998-07-13 1999-07-13 Heating a substrate support in a substrate handling chamber

Publications (2)

Publication Number Publication Date
DE69906082D1 DE69906082D1 (de) 2003-04-24
DE69906082T2 true DE69906082T2 (de) 2004-02-19

Family

ID=22359359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69906082T Expired - Fee Related DE69906082T2 (de) 1998-07-13 1999-07-13 Beheizen eines substratträgers in einem substratbehandlungsraum

Country Status (7)

Country Link
US (1) US6225601B1 (https=)
EP (1) EP1097111B1 (https=)
JP (1) JP4533984B2 (https=)
KR (1) KR100638414B1 (https=)
DE (1) DE69906082T2 (https=)
TW (1) TW538010B (https=)
WO (1) WO2000002824A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung

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JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6521046B2 (en) * 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002158178A (ja) * 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
JP4059694B2 (ja) * 2002-03-27 2008-03-12 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20110081137A1 (en) * 2009-10-06 2011-04-07 Advantest Corporation Manufacturing equipment and manufacturing method
JP2010283364A (ja) * 2010-07-15 2010-12-16 Sumitomo Electric Ind Ltd 半導体製造装置用保持体
JP5867255B2 (ja) * 2011-08-30 2016-02-24 株式会社デンソー 熱交換器、熱交換器ユニット、および熱交換器の取り付け方法
WO2015112969A1 (en) 2014-01-27 2015-07-30 Veeco Instruments. Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
CN108728828A (zh) * 2017-04-20 2018-11-02 中微半导体设备(上海)有限公司 Cvd设备及其温度控制方法与发热体
CN113091315B (zh) * 2021-03-24 2022-07-19 青岛海尔空调器有限总公司 暖风机控制方法、装置、暖风机和存储介质

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JPS5115835A (https=) * 1974-07-31 1976-02-07 Kokusai Electric Co Ltd
JPS62295418A (ja) * 1986-06-16 1987-12-22 Ushio Inc レジスト処理方法
US4886954A (en) 1988-04-15 1989-12-12 Thermco Systems, Inc. Hot wall diffusion furnace and method for operating the furnace
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JP2786571B2 (ja) * 1992-07-07 1998-08-13 日本碍子株式会社 半導体ウエハー加熱装置
US5352294A (en) 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
EP0661732B1 (en) * 1993-12-28 2004-06-09 Applied Materials, Inc. A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
DE69424759T2 (de) 1993-12-28 2001-02-08 Applied Materials, Inc. Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JPH0845946A (ja) * 1994-08-01 1996-02-16 Hitachi Ltd シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
JPH097963A (ja) * 1995-06-19 1997-01-10 Kokusai Electric Co Ltd 電気炉のデータ処理方法
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH09134886A (ja) * 1995-11-08 1997-05-20 Kokusai Electric Co Ltd 半導体製造装置のランピング温度制御方法
JP3563224B2 (ja) * 1996-03-25 2004-09-08 住友電気工業株式会社 半導体ウエハの評価方法、熱処理方法、および熱処理装置
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JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
US5812403A (en) * 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
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US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung

Also Published As

Publication number Publication date
DE69906082D1 (de) 2003-04-24
WO2000002824A1 (en) 2000-01-20
KR20010053512A (ko) 2001-06-25
US6225601B1 (en) 2001-05-01
JP2003527738A (ja) 2003-09-16
TW538010B (en) 2003-06-21
JP4533984B2 (ja) 2010-09-01
EP1097111B1 (en) 2003-03-19
KR100638414B1 (ko) 2006-10-24
EP1097111A1 (en) 2001-05-09

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