KR100638414B1 - 기판 조작 챔버에서의 기판 지지대의 가열 방법 및 열적기판 조작 장치 - Google Patents

기판 조작 챔버에서의 기판 지지대의 가열 방법 및 열적기판 조작 장치 Download PDF

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KR100638414B1
KR100638414B1 KR1020017000516A KR20017000516A KR100638414B1 KR 100638414 B1 KR100638414 B1 KR 100638414B1 KR 1020017000516 A KR1020017000516 A KR 1020017000516A KR 20017000516 A KR20017000516 A KR 20017000516A KR 100638414 B1 KR100638414 B1 KR 100638414B1
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South Korea
Prior art keywords
temperature
heating element
heating
decision point
susceptor
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KR1020017000516A
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English (en)
Korean (ko)
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KR20010053512A (ko
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임마뉴엘 비어
듀오얀 쉔
에이탄 조하
마크 엠. 콜락
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에이케이티 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
KR1020017000516A 1998-07-13 1999-07-13 기판 조작 챔버에서의 기판 지지대의 가열 방법 및 열적기판 조작 장치 Expired - Lifetime KR100638414B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/115,112 US6225601B1 (en) 1998-07-13 1998-07-13 Heating a substrate support in a substrate handling chamber
US09/115,112 1998-07-13

Publications (2)

Publication Number Publication Date
KR20010053512A KR20010053512A (ko) 2001-06-25
KR100638414B1 true KR100638414B1 (ko) 2006-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017000516A Expired - Lifetime KR100638414B1 (ko) 1998-07-13 1999-07-13 기판 조작 챔버에서의 기판 지지대의 가열 방법 및 열적기판 조작 장치

Country Status (7)

Country Link
US (1) US6225601B1 (https=)
EP (1) EP1097111B1 (https=)
JP (1) JP4533984B2 (https=)
KR (1) KR100638414B1 (https=)
DE (1) DE69906082T2 (https=)
TW (1) TW538010B (https=)
WO (1) WO2000002824A1 (https=)

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JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6521046B2 (en) * 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002158178A (ja) * 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
JP4059694B2 (ja) * 2002-03-27 2008-03-12 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20110081137A1 (en) * 2009-10-06 2011-04-07 Advantest Corporation Manufacturing equipment and manufacturing method
JP2010283364A (ja) * 2010-07-15 2010-12-16 Sumitomo Electric Ind Ltd 半導体製造装置用保持体
JP5867255B2 (ja) * 2011-08-30 2016-02-24 株式会社デンソー 熱交換器、熱交換器ユニット、および熱交換器の取り付け方法
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
WO2015112969A1 (en) 2014-01-27 2015-07-30 Veeco Instruments. Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
CN108728828A (zh) * 2017-04-20 2018-11-02 中微半导体设备(上海)有限公司 Cvd设备及其温度控制方法与发热体
CN113091315B (zh) * 2021-03-24 2022-07-19 青岛海尔空调器有限总公司 暖风机控制方法、装置、暖风机和存储介质

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JPS5115835A (https=) * 1974-07-31 1976-02-07 Kokusai Electric Co Ltd
JPS62295418A (ja) * 1986-06-16 1987-12-22 Ushio Inc レジスト処理方法
US4886954A (en) 1988-04-15 1989-12-12 Thermco Systems, Inc. Hot wall diffusion furnace and method for operating the furnace
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JP2786571B2 (ja) * 1992-07-07 1998-08-13 日本碍子株式会社 半導体ウエハー加熱装置
US5352294A (en) 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
EP0661732B1 (en) * 1993-12-28 2004-06-09 Applied Materials, Inc. A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
DE69424759T2 (de) 1993-12-28 2001-02-08 Applied Materials, Inc. Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JPH0845946A (ja) * 1994-08-01 1996-02-16 Hitachi Ltd シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
JPH097963A (ja) * 1995-06-19 1997-01-10 Kokusai Electric Co Ltd 電気炉のデータ処理方法
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH09134886A (ja) * 1995-11-08 1997-05-20 Kokusai Electric Co Ltd 半導体製造装置のランピング温度制御方法
JP3563224B2 (ja) * 1996-03-25 2004-09-08 住友電気工業株式会社 半導体ウエハの評価方法、熱処理方法、および熱処理装置
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Also Published As

Publication number Publication date
DE69906082T2 (de) 2004-02-19
DE69906082D1 (de) 2003-04-24
WO2000002824A1 (en) 2000-01-20
KR20010053512A (ko) 2001-06-25
US6225601B1 (en) 2001-05-01
JP2003527738A (ja) 2003-09-16
TW538010B (en) 2003-06-21
JP4533984B2 (ja) 2010-09-01
EP1097111B1 (en) 2003-03-19
EP1097111A1 (en) 2001-05-09

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